175A SCR Search Results
175A SCR Result Highlights (5)
Part | ECAD Model | Manufacturer | Description | Download | Buy |
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TLP175A |
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Photorelay (MOSFET output, 1-form-a), 60 V/0.1 A, 3750 Vrms, 4pin SO6 |
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SN65LBC175AN |
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Quadruple RS-485 Differential Line Receivers 16-PDIP -40 to 85 |
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SN74LV175ANSR |
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Quadruple D-Type Flip-Flops With Clear 16-SO -40 to 85 |
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SN75LBC175AN |
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Quadruple RS-485 Differential Line Receivers 16-PDIP 0 to 70 |
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TMP175AIDGKTG4 |
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Temperature Sensor with 27 I2C/SMBus Addresses in Industry Standard LM75 Form Factor & Pinout 8-VSSOP -40 to 125 |
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175A SCR Datasheets Context Search
Catalog Datasheet | Type | Document Tags | |
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Contextual Info: SPLICER TERMINAL BLOCKS 38057 38059 38064 38057 38059 UL File E98082 UL1059 Current Rating UL File E98082 175A 175A 600V AC 1 14-2/0 AWG UL File E98082 400A 400A Voltage Rating No. of Inputs Total Wire Range Screw Type No. of Outputs Total Wire Range Screw Type |
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UL1059 E98082 -70mm AWG-400kcmil -185mm AWG-600kcmil | |
Contextual Info: Connectors Rail Mount Terminal Blocks NC3-_ _ color NSE3-WH NSS3-_ _(color) Specifications Specifications Specifications Description: Rail mount terminal block. Rating: 175A, 600V Center Spacing: 1.06" (26.92mm) Number of Poles: 3 Circuits Per Foot: 11 |
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MT12-1-2 E62622, | |
Contextual Info: Automotive Relays High Current Devices High Current Relay 200 n Normally n Limiting closed contact continuous current 175A at 85°C Typical applications Energy management, battery coupling, start/stop. F230_fcw5b Contact Data Contact arrangement 1 form B, 1 NC |
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12VDC 50mm2 35mm2 Limi00 | |
Contextual Info: GBU6005 - GBU610 6.0A GLASS PASSIVATED BRIDGE RECTIFIER Features • Glass Passivated Die Construction High Case Dielectric Strength of 1500 V R M S Low Reverse Leakage Current Surge Overload Rating to 175A Peak Ideal for Printed Circuit Board Applications |
OCR Scan |
GBU6005 GBU610 E90560 IL-STD-202, DS21226 GBU6005-GBU610 | |
500a reversed diode
Abstract: g1k1 BUSBAR calculation datasheet SCR TRIGGER PULSE 3 phase thyristor Vtm 6.5 MP03 175A SCR HBT175-10
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MP03XXX DS5098-3 DS5098-4 MP03/175-16 MP03/175-14 MP03/175-12 MP03/175-10 500a reversed diode g1k1 BUSBAR calculation datasheet SCR TRIGGER PULSE 3 phase thyristor Vtm 6.5 MP03 175A SCR HBT175-10 | |
Contextual Info: GBU6005 - GBU610 6.0A GLASS PASSIVATED BRIDGE RECTIFIER Features • · · · · · Glass Passivated Die Construction High Case Dielectric Strength of 1500 VRMS Low Reverse Leakage Current Surge Overload Rating to 175A Peak Ideal for Printed Circuit Board Applications |
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GBU6005 GBU610 E90560 MIL-STD-202, DS21226 GBU6005-GBU610 | |
relay
Abstract: relay 12vdc with diode relay 12vdc coil V2323
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12VDC 50mm2 35mm2 12VDC V23230-D2001-B200 relay relay 12vdc with diode relay 12vdc coil V2323 | |
ring terminal
Abstract: torque of screw for pcb
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MT12-1/2 ring terminal torque of screw for pcb | |
diode 1406
Abstract: 600v c 1406
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MT12-1/2 diode 1406 600v c 1406 | |
E94661
Abstract: GBU6005 GBU610
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GBU6005 GBU610 1500VRMS E94661 MIL-STD-202, DS21226 GBU6005-GBU610 E94661 GBU610 | |
Contextual Info: 6 .0 Amp SINGLE PHASE SILICON BRIDGE Semiconductor Description M echanical Dimensions KBPSC FEATURES MECHANICAL DATA * Surge overload rating - 175A peak * Polarity shown on side of case * Low forward voltage drop * Positive lead beveled corner * Small size; simple installation |
OCR Scan |
KBPSC6005 | |
GBU606
Abstract: GBU610 E94661 GBU6005 GBU601 GBU602 GBU604
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GBU6005 GBU610 E94661 MIL-STD-202, DS21226 GBU6005-GBU610 GBU606 GBU610 E94661 GBU601 GBU602 GBU604 | |
E94661
Abstract: GBU6005 GBU610 223B DS21226
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GBU6005 GBU610 E94661 MIL-STD-202, DS21226 GBU6005-GBU610 E94661 GBU610 223B | |
TIC 44 SCR
Abstract: SCR TIC 44 MTO thyristor unial
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OCR Scan |
DS4477-3 TIC 44 SCR SCR TIC 44 MTO thyristor unial | |
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E94661
Abstract: GBU6005 GBU610
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GBU6005 GBU610 E94661 MIL-STD-202, DS21226 GBU6005-GBU610 E94661 GBU610 | |
E43665
Abstract: A604
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E43665 E43665 A604 | |
Contextual Info: GBU6005 - GBU610 6.0A GLASS PASSIVATED BRIDGE RECTIFIER POWER SEMICONDUCTOR Features • • • • • • Glass Passivated Die Construction High Case Dielectric Strength of 1500 VRMS Low Reverse Leakage Current Surge Overload Rating to 175A Peak Ideal for Printed Circuit Board Applications |
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GBU6005 GBU610 E90560 MIL-STD-202, DS21226 GBU6005-GBU610 | |
Contextual Info: GBU6005 - GBU610 6.0A GLASS PASSIVATED BRIDGE RECTIFIER Features • · · · · · Glass Passivated Die Construction · Lead Free Finish, RoHS Compliant Note 4 High Case Dielectric Strength of 1500 VRMS GBU Low Reverse Leakage Current Surge Overload Rating to 175A Peak |
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GBU6005 GBU610 E94661 GBU601 GBU602 GBU604 GBU606 GBU608 | |
Contextual Info: GBU6005 - GBU610 6.0A GLASS PASSIVATED BRIDGE RECTIFIER Features • · · · · · Glass Passivated Die Construction · Lead Free Finish, RoHS Compliant Note 4 High Case Dielectric Strength of 1500 VRMS GBU Low Reverse Leakage Current Surge Overload Rating to 175A Peak |
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GBU6005 GBU610 E94661 MIL-STD-202, DS21226 GBU6005-GBU610 | |
Contextual Info: APT20M11JVR 200V 175A 0.011Ω POWER MOS V S S Power MOS V® is a new generation of high voltage N-Channel enhancement mode power MOSFETs. This new technology minimizes the JFET effect, increases packing density and reduces the on-resistance. Power MOS V® |
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APT20M11JVR OT-227 E145592 | |
GBU6005
Abstract: GBU610
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OCR Scan |
GBU6005 GBU610 E90560 MIL-STD-202, DS21226 GBU6005-GBU610 GBU610 | |
Contextual Info: APT20M11JVFR 200V POWER MOS V 0.011Ω 175A FREDFET S S Power MOS V® is a new generation of high voltage N-Channel enhancement mode power MOSFETs. This new technology minimizes the JFET effect, increases packing density and reduces the on-resistance. Power MOS V® |
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APT20M11JVFR OT-227 E145592 | |
Contextual Info: APT20M11JVFR 200V POWER MOS V 0.011Ω 175A FREDFET S S Power MOS V® is a new generation of high voltage N-Channel enhancement mode power MOSFETs. This new technology minimizes the JFET effect, increases packing density and reduces the on-resistance. Power MOS V® |
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APT20M11JVFR OT-227 E145592 | |
APT20M11JVFRContextual Info: APT20M11JVFR 200V POWER MOS V 0.011Ω 175A FREDFET S S Power MOS V® is a new generation of high voltage N-Channel enhancement mode power MOSFETs. This new technology minimizes the JFET effect, increases packing density and reduces the on-resistance. Power MOS V® |
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APT20M11JVFR OT-227 E145592 APT20M11JVFR |