1776 1976 Search Results

1776 1976

Abstract: 1776 diode diode 1776 B
Contextual Info: 1776/1976 SERIES THUMBWHEEL SWITCHES EECO’s 1776 and 1976 Series thumbwheel switches are the standards of the industry. Both Series offer 8, 10, 12 or 16 position binary or decimal output codes for every possible application. The 1776 Series is a standard .500” wide, while the

diode 1776 B

Abstract: 1000C 1400 volt diode no list
Contextual Info: EECO's 1400 series switches feature snap-in front mounting in a large, easy to use package size. These switches snap together, allowing the user to create multiswitch assemblies quickly and easily without the need for additional hardware. The 1400 series offers a choice of

1736

Abstract: VACC-22
Contextual Info: Voltage Variable Attenuator VACC-22+ Typical Performance Data V CONTROL ATTENUATION @ 1900 MHz V (dB) 0.00 0.20 0.50 0.70 0.90 1.00 1.10 1.14 1.20 1.40 1.60 1.80 2.00 2.40 2.80 3.00 4.00 5.00 1.10 1.11 2.36 6.69 13.59 19.20 31.64 42.45 26.42 15.75 12.22

ITT DIODE

Abstract: 8 Position 16 Pin SPST dip switch 1A219001G 1A212001G 1A211001G EECO 2100 1A210001G EECO Switch EECO itt rotary switch 14 positions
Contextual Info: CROSS REFERENCE GUIDE EECO SWITCH To ITT/ C & K PRODUCTS EECO Switch A Transico Company 800 854-3808 (714) 835-6000 FAX: (714) 482-9429 Web: www.eecoswitch.com E-Mail: sales@eecoswitch.com Revised 02/22/2005 CROSS - REFERENCE GUIDE EECO SWITCH To ITT/ C &K

mipi controller

Abstract: ARM926 powerwise interface national pwi bus
Contextual Info: PowerWise 기술 차세대 휴대용 장치 지원 ® PowerWise 기술 차세대 휴대용 장치 지원 점점 더 많은 디지털 처리 기능을 포함하는 데이터 중 심 장치가 더욱 소형화 및 경량화되는 경향이 늘어남에 따라 시스템 설계자들은 중요한 문제에 직면하게 되었

ARM926

Abstract: arm9 architecture powerwise interface
Contextual Info: PowerWiseᮋ技術 次世代携帯機器向け電源 PowerWiseᮋ技術 小型/軽量化とデータ処理量の増加が進むデータ処理ICの急 速な普及によってシステム設計者は大きなジレンマに直面し システム･オン･チップ

Contextual Info: PowerWise 技術 推動新一代便攜式設備 ® PowerWise 技術 推動新一代便攜式設備 新一代的便攜式電子產品不但日趨輕巧纖薄，而且內置的 數字電路也越來越多，以便可以支持複雜的計算工作。 這類能快速處理大量數據的電子產品迅速普及起來，使系

LST-2130

Abstract: CD 1517 LST-780 LST-1010 LST-2020 LST-1680 1120 LST-1120 LST-900 cd 1691
Contextual Info: 12-360 RE RE TU RN LIBERTY SERIES VALVE-REGULATED SEALED , LEAD-CALCIUM BATTERY WITH PRELYTE® CY E CL LEAD MODEL LST For Telecommunication Applications 780-2130 Ampere-hours FEATURES & BENEFITS • Valve-regulated for low maintenance and low cost operation

powerwise interface

Abstract: ARM926 AMBA
Contextual Info: PowerWise 技術 推動新世代便攜式裝置 ® PowerWise 技術 推動新世代便攜式裝置 新一代的可攜式電子產品不但日趨輕巧纖薄，而且內建的 數位電路也越來越多，以便可以支援複雜的運算工作。 這類能快速處理大量資料的電子產品迅速普及起來，使系

MAX 77686 g

Abstract: MAX 77686 CDF 6D5 7B396 D5564 D898B d5623 c4369 0/MAX 77686 g 49/MAX 77686 g
Contextual Info: 7C8F8F8DC8DD8 DFD8CD8F 12344567 8 44ABCD8BCAECFDC8FCCFEFCCF 1D F8 EFC!DC8 " 3#6D55677$%4634D54&3' 34D54&362D43 7F6 C7716 A3(B6 46 D6 5$236 34D54&3' 34D54&36 >3(?6 FD6 ED6 F526 444&6 F6 E

MT16HTS51264HY-667a1

Abstract: MT47H512M8THM 200 pin SODIMM ddr2 connector 4gb MT16HTS51264HY DDR2 pin out MT16HTS51264H MT47H512M8 DDR2-533 DDR2-667 MO-224
Contextual Info: 2GB, 4GB x64, DR 200-Pin DDR2 SDRAM SODIMM Features DDR2 SDRAM SODIMM MT16HTS25664HY – 2GB MT16HTS51264HY – 4GB Features Figure 1: 200-Pin SODIMM (MO-224 R/C D) • 200-pin, small-outline dual in-line memory module (SODIMM) • Fast data transfer rates: PC2-3200, PC2-4200, or

MT16HTS51264HY-667

Abstract: ddr2 micron MT47H512M8
Contextual Info: 2GB, 4GB x64, DR 200-Pin DDR2 SDRAM SODIMM Features DDR2 SDRAM SODIMM MT16HTS25664H – 2GB1 MT16HTS51264H – 4GB For component specifications, refer to Micron’s Web site: www.micron.com Features Figure 1: • 200-pin, small outline dual in-line memory module

TRANSISTOR PNP B1443

Abstract: B1565 transistor B1274 transistor 13001 s 6d B1273 transistor B0615 DIODE Transistor B1203 transistor b1274 transistor b1134 transistor B1204
Contextual Info: Version 1.7 Produced in June 1998 Sharp Programmable Controller New Satellite JW20H Programming Manual * Ladder instruction version 04000 F — 44 O I F — 08 1 O C T 100 09000 0000 09000 F — 00 X F E R □ F — 05 D M P X F — 63 IN C 09000 09000 09000

MT16JTF1G64HZ-1G4

Abstract: MT16JTF1G64HZ MT16JTF25664HZ MT16JTF51264HZ-1G4 MT16JTF25664HZ-1G1 MT16JTF1G64HZ-1G1 MT16JTF1G64HZ-1G6 MT16JTF51264HZ-1G6 U12-U15 MT16JTF51264HZ
Contextual Info: 2GB, 4GB, 8GB x64, DR 204-Pin DDR3 SODIMM Features DDR3 SDRAM SODIMM MT16JTF25664HZ – 2GB MT16JTF51264HZ – 4GB MT16JTF1G64HZ – 8GB Features Figure 1: 204-Pin SODIMM (MO-268 R/C F) • DDR3 functionality and operations supported as defined in the component data sheet

MT41J512M8

Abstract: 204-Pin DDR3 SODIMM high density sodimm ddr3 memory eeprom 2416 wp dual 200 pin SODIMM ddr3 connector
Contextual Info: 2GB, 4GB, 8GB x64, DR 204-Pin DDR3 SODIMM Features DDR3 SDRAM SODIMM MT16JTF25664HZ – 2GB MT16JTF51264HZ – 4GB MT16JTF1G64HZ – 8GB Features Figure 1: 204-Pin SODIMM (MO-268 R/C F) • DDR3 functionality and operations supported as defined in the component data sheet

204 pin so-DIMM DDR3 connector

Contextual Info: 2GB, 4GB, 8GB x64, DR 204-Pin DDR3 SODIMM Features DDR3 SDRAM SODIMM MT16JTF25664HZ – 2GB MT16JTF51264HZ – 4GB MT16JTF1G64HZ – 8GB Features Figure 1: 204-Pin SODIMM (MO-268 R/C F) • DDR3 functionality and operations supported as defined in the component data sheet

MT16JTF1G64HZ

Abstract: MT16JTF1G64HZ-1G4 MT16JTF51264HZ-1G4
Contextual Info: 2GB, 4GB, 8GB x64, DR 204-Pin DDR3 SODIMM Features DDR3 SDRAM SODIMM MT16JTF25664HZ – 2GB MT16JTF51264HZ – 4GB MT16JTF1G64HZ – 8GB Features Figure 1: 204-Pin SODIMM (MO-268 R/C F) • DDR3 functionality and operations supported as defined in the component data sheet

eeprom 2416 wp

Abstract: MICRON ddr3 udimm MT16JTF51264AZ-1G4M1
Contextual Info: 2GB, 4GB, 8GB x64, DR 240-Pin DDR3 UDIMM Features DDR3 SDRAM UDIMM MT16JTF25664AZ – 2GB MT16JTF51264AZ – 4GB MT16JTF1G64AZ – 8GB Features Figure 1: 240-Pin UDIMM (MO-269 R/C B) • DDR3 functionality and operations supported as per component data sheet

MT16JTF51264AZ-1G6K1

Contextual Info: 2GB, 4GB, 8GB x64, DR 240-Pin DDR3 UDIMM Features DDR3 SDRAM UDIMM MT16JTF25664AZ – 2GB MT16JTF51264AZ – 4GB MT16JTF1G64AZ – 8GB Features Figure 1: 240-Pin UDIMM (MO-269 R/C B) • DDR3 functionality and operations supported as per component data sheet

Contextual Info: 2GB, 4GB, 8GB x64, DR 240-Pin DDR3 UDIMM Features DDR3 SDRAM UDIMM MT16JTF25664AZ – 2GB MT16JTF51264AZ – 4GB MT16JTF1G64AZ – 8GB Features Figure 1: 240-Pin UDIMM (MO-269 R/C B) • DDR3 functionality and operations supported as per component data sheet

240 pin DIMM DDR3 signal assignments

Contextual Info: 2GB, 4GB, 8GB x64, DR 240-Pin DDR3 UDIMM Features DDR3 SDRAM UDIMM MT16JTF25664AZ – 2GB MT16JTF51264AZ – 4GB MT16JTF1G64AZ – 8GB Features Figure 1: 240-Pin UDIMM (MO-269 R/C B) • DDR3 functionality and operations supported as per component data sheet

Contextual Info: 2GB, 4GB, 8GB x64, DR 240-Pin DDR3 UDIMM Features DDR3 SDRAM UDIMM MT16JTF25664AZ – 2GB MT16JTF51264AZ – 4GB MT16JTF1G64AZ – 8GB Features Figure 1: 240-Pin UDIMM (MO-269 R/C B) • DDR3 functionality and operations supported as per component data sheet

IXGP70N33

Abstract: IXGQ90N33 SK0604 IXTP76N075 IXER35N120D1 IXGP70N33TBM-A DH60-18A VBO19 SK0712 IXTH1N250
Contextual Info: Efficiency Through Technology RELIABILITY REPORT 2008 Power Semiconductor Devices January 2006 - December 2007 IXYS Corporation 3540 Bassett Street Santa Clara CA 95054 USA Published February 2008 IXYS Semiconductor GmbH Edisonstrasse 15 D-68623 Lampertheim

cr 5228 t

Abstract: AF83 SS125 276 .212f a983 PK131 ss125 datasheet 1182h PK10 ss125 regulator
Contextual Info: —PRELIMINARY— HD66765 396-channel Segment Driver with Internal RAM for 4096-color Displays n o ti Target Specification Rev.0.1 January, 2001 a c fi i c e Description Sp The HD66765, 396-channel segment driver LSI, displays 132RGB-by-176-dot graphics on STN