17NOV08 Search Results
17NOV08 Datasheets Context Search
Catalog Datasheet | Type | Document Tags | |
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Contextual Info: New Product SiZ730DT Vishay Siliconix N-Channel 30 V D-S MOSFETs FEATURES PRODUCT SUMMARY VDS (V) Channel-1 30 Channel-2 30 RDS(on) () ID (A) 0.0093 at VGS = 10 V 16a 0.0130 at VGS = 4.5 V 16a 0.0039 at VGS = 10 V 35a 0.0053 at VGS = 4.5 V 35a Qg (Typ.) |
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SiZ730DT 2002/95/EC SiZ730DT-T1-GE3 2011/65/EU 2002/95/EC. 2002/95/EC 2011/65/EU. 12-Mar-12 | |
234BContextual Info: New Product SiZ790DT Vishay Siliconix Dual N-Channel 30 V D-S MOSFETs with Schottky Diode FEATURES PRODUCT SUMMARY VDS (V) Channel-1 30 Channel-2 30 RDS(on) () ID (A) 0.0093 at VGS = 10 V 16a 0.0130 at VGS = 4.5 V 16a 0.0047 at VGS = 10 V 35a 0.0059 at VGS = 4.5 V |
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SiZ790DT 2002/95/EC 2011/65/EU 2002/95/EC. 2002/95/EC 2011/65/EU. 12-Mar-12 234B | |
Contextual Info: 1 2 3 4 5 TECHNICAL CHARACTERISTICS MATERIAL INSULATOR: NYLON 6T FLAMABILITY RATING: UL94-V0 COLOR: BLACK CONTACT MATERIAL: COPPER ALLOY CONTACT TYPE: STAMPED CONTACT PLATING: TIN QUALITY CLASS: 25 MATING CYCLES PITCH: 3.00MM A ENVIRONMENTAL OPERATING TEMPERATURE: -25 UP TO 105°C |
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UL94-V0 23-AVR-09 17-NOV-08 31-DEC-07 20-MAR-07 27-FEB-07 26-OCT-05 04-OCT-04 | |
1214CContextual Info: 1 2 3 4 5 TECHNICAL CHARACTERISTICS MATERIAL INSULATOR: NYLON 6T FLAMABILITY RATING: UL94-V0 COLOR: BLACK CONTACT MATERIAL: COPPER ALLOY CONTACT TYPE: STAMPED CONTACT PLATING: TIN QUALITY CLASS: 25 MATING CYCLES PITCH: 3.00MM A ENVIRONMENTAL OPERATING TEMPERATURE: -25 UP TO 105°C |
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UL94-V0 17-FEB-09 17-NOV-08 04-DEC-07 27-FEB-07 20-JAN-05 1214C | |
5A02Contextual Info: 1 2 3 4 5 TECHNICAL CHARACTERISTICS MATERIAL INSULATOR: NYLON 6T FLAMABILITY RATING: UL94-V0 COLOR: BLACK CONTACT MATERIAL: COPPER ALLOY CONTACT TYPE: STAMPED CONTACT PLATING: TIN QUALITY CLASS: 25 MATING CYCLES PITCH: 3.00MM A ENVIRONMENTAL OPERATING TEMPERATURE: -25 UP TO 105°C |
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UL94-V0 23-AVR-09 17-NOV-08 31-DEC-07 23-FEB-07 19-DEC-06 19-JAN-04 5A02 | |
12v bulb 220 supply diagram
Abstract: LED with 3v INPUT VOLTAGE CAT4201 CAT4201TD-GT3 CMDSH05-4
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CAT4201 350mA 350mA CAT4201 MD-5025 12v bulb 220 supply diagram LED with 3v INPUT VOLTAGE CAT4201TD-GT3 CMDSH05-4 | |
tlo 84
Abstract: CAT3648 CAT3648HV3-GT2 MO-220
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CAT3648 CAT3648 MD-5031 tlo 84 CAT3648HV3-GT2 MO-220 | |
MD-5034
Abstract: MD 5034 LED 2ma Md5034 soic-16 mo 5034 MS-012 soic16 CAT4008 CAT4008V-T1 D 739
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CAT4008 CAT4008 100mA 25MHz 100mA 300mV 25MHz MD-5034 MD 5034 LED 2ma Md5034 soic-16 mo 5034 MS-012 soic16 CAT4008V-T1 D 739 | |
Contextual Info: SiZ710DT Vishay Siliconix N-Channel 20 V D-S MOSFETs FEATURES PRODUCT SUMMARY VDS (V) Channel-1 20 Channel-2 20 RDS(on) () ID (A) 0.0068 at VGS = 10 V 16a 0.0090 at VGS = 4.5 V 16a 0.0033 at VGS = 10 V 35a 0.0043 at VGS = 4.5 V 35a Qg (Typ.) 6.9 nC 18.2 nC |
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SiZ710DT 2002/95/EC 2002/95/EC. 2002/95/EC 2011/65/EU. JS709A 02-Oct-12 | |
SI4174DY-T1-GE3
Abstract: si4174dy A1827
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Si4174DY Si4174DY-T1-GE3 18-Jul-08 A1827 | |
Contextual Info: New Product SiZ700DT Vishay Siliconix N-Channel 20-V D-S MOSFETs FEATURES PRODUCT SUMMARY VDS (V) Channel-1 20 Channel-2 20 RDS(on) () ID (A) 0.0086 at VGS = 10 V 16a 0.0108 at VGS = 4.5 V 16a 0.0058 at VGS = 10 V 16a 0.0066 at VGS = 4.5 V 16a Qg (Typ.) |
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SiZ700DT 2002/95/EC 2002/95/EC. 2002/95/EC 2011/65/EU. JS709A 02-Oct-12 | |
si8445
Abstract: Si8445DB
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Si8445DB 11-Mar-11 si8445 | |
Contextual Info: New Product SiZ730DT Vishay Siliconix N-Channel 30 V D-S MOSFETs FEATURES PRODUCT SUMMARY VDS (V) Channel-1 30 Channel-2 30 RDS(on) () ID (A) 0.0093 at VGS = 10 V 16a 0.0130 at VGS = 4.5 V 16a 0.0039 at VGS = 10 V 35a 0.0053 at VGS = 4.5 V 35a Qg (Typ.) |
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SiZ730DT 2002/95/EC 2011/65/EU 2002/95/EC. 2002/95/EC 2011/65/EU. 12-Mar-12 | |
Contextual Info: SiR462DP Vishay Siliconix N-Channel 30-V D-S MOSFET FEATURES PRODUCT SUMMARY VDS (V) 30 RDS(on) (Ω) ID (A) 0.0079 at VGS = 10 V 30a 0.010 at VGS = 4.5 V 30a • Halogen-free According to IEC 61249-2-21 • TrenchFET Power MOSFET • 100 % Rg Tested • 100 % UIS Tested |
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SiR462DP SiR462DP-T1-GE3 2011/65/EU 2002/95/EC. 2002/95/EC 2011/65/EU. 12-Mar-12 | |
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Contextual Info: SPICE Device Model Si7106DN Vishay Siliconix N-Channel 20-V D-S Fast Switching MOSFET CHARACTERISTICS • N-Channel Vertical DMOS • Macro Model (Subcircuit Model) • Level 3 MOS • Apply for both Linear and Switching Application • Accurate over the - 55 °C to 125°C Temperature Range |
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Si7106DN 18-Jul-08 | |
sis430dnContextual Info: SPICE Device Model SiS430DN Vishay Siliconix N-Channel 25-V D-S MOSFET CHARACTERISTICS • N-Channel Vertical DMOS • Macro Model (Subcircuit Model) • Level 3 MOS • Apply for both Linear and Switching Application • Accurate over the - 55 °C to 125 °C Temperature Range |
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SiS430DN 18-Jul-08 | |
A4539
Abstract: 82728 SiS424DN
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SiS424DN 18-Jul-08 A4539 82728 | |
Si7272DPContextual Info: SPICE Device Model Si7272DP Vishay Siliconix N-Channel 30-V D-S MOSFET CHARACTERISTICS • N-Channel Vertical DMOS • Macro Model (Subcircuit Model) • Level 3 MOS • Apply for both Linear and Switching Application • Accurate over the - 55 °C to 125 °C Temperature Range |
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Si7272DP 18-Jul-08 | |
Si3865CDVContextual Info: New Product Si3865CDV Vishay Siliconix Load Switch with Level-Shift FEATURES PRODUCT SUMMARY VDS2 V (VIN) 1.8 to 12 RDS(on) (Ω) ID (A) 0.060 at VIN = 4.5 V 2.8 0.095 at VIN = 2.5 V 2.2 0.130 at VIN = 1.8 V 1.9 • • • • • • 60 mΩ Low RDS(on) TrenchFET |
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Si3865CDV 18-Jul-08 | |
SiR438DPContextual Info: SPICE Device Model SiR438DP Vishay Siliconix N-Channel 25-V D-S MOSFET CHARACTERISTICS • N-Channel Vertical DMOS • Macro Model (Subcircuit Model) • Level 3 MOS • Apply for both Linear and Switching Application • Accurate over the - 55 °C to 125 °C Temperature Range |
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SiR438DP 18-Jul-08 | |
Contextual Info: 1 2 3 4 5 TECHNICAL CHARACTERISTICS MATERIAL INSULATOR: NYLON 6T FLAMABILITY RATING: UL94-V0 COLOR: BLACK PITCH: 3.00MM A ENVIRONMENTAL OPERATING TEMPERATURE: -25 UP TO 105°C COMPLIANCE: LEAD FREE AND ROHS ELECTRICAL CURRENT RATING:5A WORKING VOLTAGE: 250V AC |
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UL94-V0 25-JAN-07 30-JUN-05 18-JUN-04 | |
Si8445DBContextual Info: Si8445DB Vishay Siliconix P-Channel 20-V D-S MOSFET FEATURES PRODUCT SUMMARY RDS(on) (Ω) ID (A)e 0.084 at VGS = - 4.5 V - 9.8 0.100 at VGS = - 2.5 V - 9.0 VDS (V) - 20 0.120 at VGS = - 1.8 V - 5.0 0.155 at VGS = - 1.5 V - 2.0 0.495 at VGS = - 1.2 V - 0.5 |
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Si8445DB 2002/95/EC. 2002/95/EC 2011/65/EU. JS709A 02-Oct-12 | |
Si8445DBContextual Info: Si8445DB Vishay Siliconix P-Channel 20-V D-S MOSFET FEATURES PRODUCT SUMMARY VDS (V) ID (A)e RDS(on) (Ω) - 20 0.084 at VGS = - 4.5 V - 9.8 0.100 at VGS = - 2.5 V - 9.0 0.120 at VGS = - 1.8 V - 5.0 0.155 at VGS = - 1.5 V - 2.0 0.495 at VGS = - 1.2 V - 0.5 |
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Si8445DB 2011/65/EU 2002/95/EC. 2002/95/EC 2011/65/EU. 12-Mar-12 | |
si4174Contextual Info: New Product Si4174DY Vishay Siliconix N-Channel 30-V D-S MOSFET FEATURES PRODUCT SUMMARY RDS(on) (Ω) ID (A)a 0.0095 at VGS = 10 V 17 0.013 at VGS = 4.5 V 14.5 VDS (V) 30 • Halogen-free According to IEC 61249-2-21 • TrenchFET Power MOSFET • 100 % Rg and UIS Tested |
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Si4174DY Si4174DY-T1-GE3 2011/65/EU 2002/95/EC. 2002/95/EC 2011/65/EU. 12-Mar-12 si4174 |