18 L THYRISTOR Search Results

GT 1081

Abstract: S5 3000 T1791N
Contextual Info: Freewheeling Diodes Type V D D V(drm) V l(FSM) l (2)d t kA A(2>s kV Tc= -25 .+85°C I(RM) V /kA 2000, 2500 typ 1,25 24 2880 *103 2,62/6,4 3500.4500 3500.4500 3500.4500 4500 4500 4500 4500 4500 6500 typ 2 18 32 45 18 32 4,5 18 32 26 1620 5120 1012

thyristor TT 18 N

Abstract: thyristor tt 105 n 16 thyristor tt 121 thyristor phase control rectifier diode w3 three phase fully controlled rectifier ECONOPACK DD 105 N 16 L thyristoren three phase bridge fully controlled rectifier
Contextual Info: Typenbezeichnungen Type designations Fully controlled Thyristor modules TT 121 N 18 K O F TT -A TZ 121 N F 18 L K O F -A -K with 2 symmetric thyristors with 1 symmetric thyristor limiting average on-state current A , tc = 85° C phase control thyristor fast thyristor with

thyristor tt 121

Abstract: EUPEC tt 105 thyristor DATASHEET EUPEC Thyristor three phase thyristor modules Common-Anode Half-Controlled Bridge EUPEC TT thyristor thyristor phase control rectifier EUPEC tt 105 N 16
Contextual Info: Typenbezeichnungen Type designations Fully controlled Thyristor modules TT 121 N 18 K O F TT -A TZ 121 N F 18 L K O F -A -K with 2 symmetric thyristors with 1 symmetric thyristor limiting average on-state current A , tc = 85° C phase control thyristor fast thyristor with

TIC47

Abstract: TIC44 thyristor tic 126 TIC45 THYRISTOR TIC45 TIC46 TIC41 TIC45 AGK tic 260 TIC44 AGK
Contextual Info: TYPES TIC 44, TIC 45. TIC46, TIC47 P-N-P-N PLANAR SILICON REVERSE-BLOCKING TRIODE THYRISTORS S I L E C T t T H Y R IS T O R S t 600 m A D C • 30 thru 200 V O L T S Rugged, One-Piece Construction with Standard TO -18 100-mil Pin-Circle Configuration mechanical data

M21C

Abstract: issit
Contextual Info: M21C M21C P h PNPN E3 S7V“ ^ l ! v ' J = i > M e « :f/P *G a te Si Planar Reverse Blocking Thyristor 'hW^ftJillffl/Small Power Control U n it : mm 5.1 max. & 4.1max. 18/F eatures • y — reliability planar design • iS ^ .V 'S S E ^ /J\$ V '0 / L o w leakage current

thyristor tt 162 n

Abstract: fast thyristor 1000V thyristor tt 162 n 16 IGBT module FZ 400 thyristor TT 162 thyristor td 162 n Thyristor PIN CONFIGURATION thyristor tt 500 n 16 thyristor 162 THYRISTOR H 1500
Contextual Info: Typenbezeichnungen IGBT Scheibenbauelemente T930 S 18 TM TM C Thyristor K 40µs D Diode L 45µs A asymmetrischer Thyristor M 50µs P 55µs Dauergrenzstrom A N 60µs Standardkeramik-Scheibe T 80µs 1 Hochleistungskeramik-Scheibe U 120µs 930 SCR/Diode Modules

Contextual Info: International I G R Rectifier iN T£SN AT:Cf-*> K C :l» k i Phase Control SCR Thyristor / High Voltage Diode Doubler Circuit Negative Control MAGN-A-Pak [RKLI70-04 IRKL170-08 IRKL170-12 IRK.L170-14 IRKL170-16 IRKL230-08 IRKL230-12 IRKL230-16 IRKL230-18 IRKL230-20

Contextual Info: FT package Part num ber schem e F T 07 N 18 KNX 1 Positioning pin hole 3.5mm 0.140" DIA 1.8mm (0.070") Deep one on each side Aux., Cathode terminal 6.2mm (0.245") L 4.9mm (0.195") W 0.8mm (0.030") H 2 3 4 5 6 1) Package designation 2) Thyristor designation (i.e. SCR)

ABB thyristor

Abstract: abb 5stH ETFE
Contextual Info: P U L SE PO W ER APPLICATIO N S MEDIUM VOLTAGE HIGH-CURRENT THYRISTOR . . . . SWITCH • • - • 5STH 20H4501_ Old Type: p/n HCT 2 0 0 3 ^ 5 0 2 4500V 18V 0,85 x V drm (1m in.) V drm: V rrm: V dc max: 80 kA / tp = 250 us 18 kA / fas 125 °C

siemens BSM b2

Abstract: smd zener GD AX transistor fp 1016 79 p Siemens anwendungsbeispiele siemens igbt BSM 25 gb 100 d BTS412A DIODE ZENER BZW 04 TRANSISTOR EN SMD TZ N-Kanal FET BTS542R
Contextual Info: Technische Angaben SIPMOS-Leistungstransistoren und Dioden SIPMOS-Leistungstransistoren Transistoren im Bereich 50 V . 1000 V, 1,5 A . 60 A und 18 mQ . 8 Q. P -K a n a l N-Kanal Produktpalette • • • • • N- und P-Kanal-Anreicherungstypen FREDFET

SPI-237

Abstract: SPI-235-18 SPX.4140-001
Contextual Info: Ultrasmall-sized photointerrupters Absolute maximum ratings Type No. Features IF nÄ VCEO (V) tor Electro-optical characteristics (Ta = 2 5 1 ) 1C min (mA) IF (mA) VCE (V) ICEOmax (j»A) KS !» VC«s*l) max (V) SPI-235-18 N common, single 50 20 -20 to 80

scr C35

Abstract: C35M C3SA c358 scr
Contextual Info: POÜIEREX m IN C B'IE um D • D0ÜS3SQ tx 7 *P R X C 3 5 Powerex, Inc., Hlltls Street, Youngwood, Pennsylvania 15697 412 925-7272 Powerex Europe, S.A., 428 Avenue G. Durami, BP107, 72003 Le Mans, France (43) 41.14.14 P tlQ S B C O ilttO l 18 Amperes/100-600 Volts

IRKT71 scr

Abstract: 12OT irkl56 IRKH26-12 IRKT91 IRKT91/16
Contextual Info: I n t e r n a t io n a l R e c t if ie r Phase Control SCR Part Number 18 VRRM Vorm (V) s I IRKT71/08 IRKT71/10 IRKT71/12 IRKT71/14 IRKT71/16 IRKT91/04 IRKT91/06 IRKT91/08 IRKT91/10 IRKT91/12 IRKT91/14 IRKT91/16 IRKT105/04 IRKT105/06 IRKT105/08 IRKT105/10

fs10j

Abstract: SKN340F18 B949 b951 b950 T 341 D semikron rectifier 100A 800V B948 SKN340F SKN340F12
Contextual Info: 51E D fll3b b ? l 0003=145 s e m ik r d n SEMIKRON INC 400 A 600 800 445 A k SKN 340 F 08 SKN 340 F SKN 341F SKN 341 F 08 SKN 341 F 10 - 1200 SKN 340 F 12 1400 SKN 340 F 14 - 1600 SKN 340 F 16 - 1800 SKN 340 F 18 - Ifav Î '0 3 - 2 .3 , SKN 341 F 06 - 1000

rjp3053

Abstract: RJP3063 rjp6065 RJP2557 RJP3057 RJH30 RQJ0301 RJP3065 rjk5020 RJK2009
Contextual Info: 2007.10 Renesas Transistors/Thyristors/Triacs Status List Topic_New-Generation Power MOS FET: Low Loss MOS FET " JET " 10th Gen. - - - - - - - - - - - - - - - - - - - - - - - - - - - - - 2 Index - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - 3 to 5

T308

Abstract: 200n60 41178 T821 T930S T1052 T 290 eupec thyristors EUPEC T 691 S 6210s
Contextual Info: Fast thyristors Type 34Q35T7 MTE D •trm sm V drm Itsm / i 2dt Itavm^ c V TO 10 ms, 10 ms, Ivi m ax 180 °el sin. tv, •vj max tvj m ax A A2S A/°C V UPEC DOOOlDfe. TBT (di/dt)cr (dv/dt)cr Ivj max DIN IEC 747-6 DIN IEC 747-6 m£2 A/flS it EUPE I- a Vgt

T12F

Abstract: AL 2450 dv EUPEC T 760 S101 T1052 T60F EUPEC T 821 EUPEC tt 25 N 12 EUPEC TT 66 n 12 EUPEC tt 66 N 16
Contextual Info: Fast thyristors •trmsm 1 Type 4TE D It s m / ¡ 2dt • It a v m ^ 34Q35T7 c V TO it DOOOlOfci TaT ■ UPEC EUPE (di/dt)cr (dv/dt)cr Vgt Ig t Rthjc tvj max Outline 1 > ■ T 12 F A 10 ms, 10 ms, 180 °el tv, DIN DIN Wj = tv j Wj max tv| max sin. tvj max

1002ds

Abstract: 4008ZB 2SC 9012 MP 1009 es 2SC 8050 20AAJ-8H 6020v4 2SC1417 2SC 8550 cr3as
Contextual Info: 2004.4 Renesas Transistors/Thyristors/Triacs Status List Topic—CMFPAK-6 Series of Power MOS FETs for Portable Devices •·······················································2 Index ······················································································3 to 5

T308

Abstract: T930S C122B T188F
Contextual Info: Fast Thyristors T yp e V drm V RRM V It r m s m Itsm It a v m ^ c V TO It (d i/d t)cr A kA A 2s A /°C V m il A /p s 10 ms, 10ms, Wj max ^vj max 180° el sin ^vj max ^vj max DIN I EC 747-6 72/85 1,25 1,8 200 V dsm= V drm , V rsm=V rrm+ 100 V T 72 F 200. 800

Contextual Info: Fast Thyristors T yp e V drm V RRM V 72 F 200. 800 rT d i/d t cr tq (dv/dt) cr V qt Ig t RthJC tv j m ax V m il A/^IS MS V/|JS V mA ° C /W °c It s m Í i2dt It a v m ^ A kA A2s A /°C 10 ms, 10ms, tv, = ^vj max 180° el sin tv¡ = ^vj max ^vj max ^vj max

T691S

Abstract: T188F
Contextual Info: Fast thyristors It r m s m V drm It s m ./ i2dt 10 m s , 10 m s . di/dt Cf (dv/dt)c, Itavm ^ c V (TO) T] 180 “el tV; t„| ma* D IN D IN 'v l Wj = 1 8 0 °e l s in t,| ,va* IEC 747-6 IEC 747-6 2 5 °C 25 “C s in u s A /°C V mQ A /ju s V/n S V mA °c/w

1002ds

Abstract: 6020v4 TRANSISTOR BJ 131-6 2SC 8550 transistor 2sc1417 HITACHI 08122B transistor h945 6030v4 2SC 8050 25aaj
Contextual Info: 2004.1 Renesas Transistors/Thyristors/Triacs Status List Topic—High Frequency Silicon Bipolar Transistor "2SC5998" •············································································ 2

T-290 eupec

Abstract: el 509 T188F T510S 3403SC17 00G132
Contextual Info: Type V drm It r m s m Its m 3 4 0 3 S C17 00G132Ö blE D EUPEC Fast thyristors BMT M U P E C / i 2d t Itavm ^ c V TO rT ( d i/d t) cr ( d v /d t)cr V gt Iqt RfhJC DIN IEC 747-6 tyj = 25 °C tVj = 25 °C 180 ”el sinus V mA °C/W °c = 50 2 = 500 = 500 =1000

T188F

Abstract: T510S T-290 eupec
Contextual Info: EUPEC F as t thyristors Type V drm V It r m s m It s m / i2dt 10 ms, tj max kA A2s D • 3 4 Q 3 S t17 D0G13SÖ di/dt cr (dv/dt)cr tv j max DIN IEC 747-6 Itavm/Ic V(TO) rT 10 m s, 1 80 "Bl tv | = t,j = tv , max s in . t ’.'i max E4T ■ U P E C V gt Iq t