18-LEAD D-6 PACKAGE Search Results

MIL-STD-1835

Abstract: D22 PACKAGE DIAGRAM 40 PIN CERDIP D2 Package diagram D2 Package MIL-STD d 1835 D5011 cerdip cerdip 16 lead
Contextual Info: Package Diagram Ceramic Dual-In-Line Packages 16-Lead 300-Mil CerDIP D2 MIL-STD-1835 D-2 Config. A 18-Lead (300-Mil) CerDIP D4 MIL-STD-1835 D-6 Config. A 1 Package Diagram 20-Lead (300-Mil) CerDIP D6 MIL-STD-1835 D-8 Config. A 22–Lead (400–Mil) CerDIP D8

GDIP1-T18

Abstract: EA MARK 18-LEAD D-6 PACKAGE
Contextual Info: Hermetic Packages for Integrated Circuits Ceramic Dual-In-Line Frit Seal Packages CERDIP F18.3 MIL-STD-1835 GDIP1-T18 (D-6, CONFIGURATION A) LEAD FINISH c1 18 LEAD CERAMIC DUAL-IN-LINE FRIT SEAL PACKAGE -D- -A- BASE METAL E M -Bbbb S C A-B S -C- S1 0.200

Contextual Info: a FEATURES 18 MSPS Correlated Double Sampler CDS 6 dB to 40 dB 10-Bit Variable Gain Amplifier (VGA) Low Noise Clamp Circuits Preblanking Function 10-Bit 18 MSPS A/D Converter 3-Wire Serial Digital Interface 3 V Single Supply Operation Low Power CMOS 48-Lead LQFP Package

Contextual Info: GaAs 1C SPDT Switch Reflective DC-18 GHz ESAlpha AS018R2-65 Features •65 ■ Broadband D C -18 GHz 0 .3 8 8 9 .8 6 m m 0 0 .0 7 0 (1 .7 8 m m 0 .1 1 5 (2 .9 2 m m ) ■ Reflective, Short ± 0.002 ■ 5 Lead Hermetic Package in IS^$ KOVAR 0 .1 6 4 (4 .1 6 m m ) {

Contextual Info: CMOS DUAL SyncFlFO DUAL 256 x 18, DUAL 512 x 18, DUAL 1024x18 d ty IDT72805LB IDT72815LB IDT72825LB Integrated Device Technology, Inc. • Enable puts output data bus in high impedance state • High-performance submicron CMOS technology • Available in a 121-lead, 1 6 x 1 6 mm plastic Ball Grid

CDIP2-T18

Abstract: 2N18 18-LEAD D-6 PACKAGE
Contextual Info: Hermetic Packages for Integrated Circuits Ceramic Dual-In-Line Metal Seal Packages SBDIP D18.3 MIL-STD-1835 CDIP2-T18 (D-6, CONFIGURATION C) LEAD FINISH c1 -A- 18 LEAD CERAMIC DUAL-IN-LINE METAL SEAL PACKAGE -DBASE METAL E b1 M (b) M -Bbbb S C A - B S SECTION A-A

Faa23

Contextual Info: ~G E SOLID STATE 01 De | 3fl7S0fll QD13L73 Q 01E 13672 ' 3875081 G E SOLID STATE CA3300 Types D “p CMOS Video Speed 6-Bit Flash Analog-to-Digital Converter For Use in Low-Power Consumption, High-Sp Digitization Applications ;u 18-Lead Dual-ln-Llne kPlastic Package

27BSC

Abstract: marking 62m
Contextual Info: WTK9410 8 D S 7 D S 2 P b Lead Pb -Free 1 Surface Mount N-Channel Enhancement Mode MOSFET 6 D 3 S DRAIN CURRENT 18 AMPERES DRAIN SOURCE VOLTAGE 30 VOLTAGE 5 D 4 G Features: * Simple Drive Requirement. * Low On-Resistance. * Fast Switching. * Super high dense cell design for low RDS(ON)

Contextual Info: MN103SK7 Series MN103SK7N Type MN103SK7R Mask ROM Internal ROM type ROM byte 512K 1024K RAM (byte) 32K 40K Package (Lead-free) Minimum Instruction Execution Time UBGA257-P-1111A 16.7 ns (at 2.7 V to 3.6 V, 60 MHz) • Interrupts RESET. IRQ x 11. NMI. Key input. Timer × 32. Input capture × 16. PWM × 6. SIF × 24. I2C × 4. DMA × 18. WDT. A/D. System error

Contextual Info: MN103SD0 Series MN103SD0Q MN103SFD0R Mask ROM FLASH ROM byte 768K 1024K RAM (byte) 32K 40K Type Internal ROM type Package (Lead-free) Minimum Instruction Execution Time UBGA257-P-1111A 16.7 ns (at 2.7 V to 3.6 V, 60 MHz) • Interrupts RESET. IRQ x 11. NMI. Key input. Timer × 32. Input capture × 16. PWM × 6. SIF × 24. I2C × 4. DMA × 18. WDT. A/D. System error

MS 21340-05

Abstract: MS24331 JCA 812 MIL-W-5088 MIL-S-8805 MS2508I-C6
Contextual Info: MICRO SWITCH r FREEPORT, IL L IN O IS . A D IV IS IO N OF M FG . 4 E N 1 -6 SWITCH-ENCLOSED U S A HONEYW ELL MILITARY STDS PART NO. MS 243 31 - 4 CODE 9 1 9 2 9 St FED. C A T A L O G L IS T IN G lf> 1.50 DIA 8 NO. 18 WIRE LEAD PER M IL - W - 2 2 7 5 9 / 7 MARKED WITH

NL235

Contextual Info: T L COMPATIBLE 10-TAP LOGIC DELAY MODULE # T2L input and outputs # Delays stable and precise # 14-pin Space Saver package ^1»*# Leads - thru-hole, J, Gull Wing or Tucked # Available in delays from 15 to 1000ns # Output and nine 9 taps - each isolated and with 10 T^L fan-out capacity

MS-001-BB

Abstract: MS-001-AA dip-10 MS-001-AD MS-001BB MS-001-BA 77-1 ms-001aa ma003 010AA
Contextual Info: PACKAGE OUTLINES PLASTIC DIP 0.300" row spacing PACKAGE DESIGNATORS A, B, or M Dimensions in Inches 0.014 0.008 N 0.430 MAX 0.280 0.240 0.300 BSC N/2 1 0.070 0.045 0.100 0.005 BSC MIN NOTE 2 NOTE 6 D NOTE 1 0.210 MAX 0.005 0.015 MIN 0.150 0.115 MIN 0.022

IRS21064

Abstract: IRS2106 IRFBC30 IRFBC20 IRFBC40 IRFPE50
Contextual Info: PRELIMINARY Data Sheet No. PD60246 revB IRS2106/IRS21064 S PbF HIGH AND LOW SIDE DRIVER Features Packages • Floating channel designed for bootstrap operation • Fully operational to +600 V 8-Lead SOIC • Tolerant to negative transient voltage, dV/dt immune

RH1013MW

Abstract: RH1013M RH1013MH RH1013MJ8
Contextual Info: SPEC NO. 05-08-5013 REV. K RH1013M, DUAL PRECISION OPERATIONAL AMPLIFIER REVISION RECORD DESCRIPTION REV A B C D E DATE INITIAL RELEASE PARAGRAPH 3.8 NOW REFLECTS THE CORRECT FIGURES FOR BURN-IN CIRCUITS FOR EACH PERTINENT PACKAGE. DELETION OF PARAGRAPHS 3.12.1 AND 3.12.2, AND INCORPORATION

IRFBC30

Abstract: IRS2108 IR21084 IRFBC20 IRFBC40 IRFPE50 IRS21084 IRS2108S
Contextual Info: Data Sheet No. PD60260 IRS2108/IRS21084 S PbF HALF-BRIDGE DRIVER Features • Floating channel designed for bootstrap operation • Fully operational to +600 V • Tolerant to negative transient voltage, dV/dt • • • • • • • • • • Packages

TDS05160

Abstract: TDS05150 TDS03160 TDS03150 TDSR5150 9999 DIODE tsop1736 TLU02401 BPW2 silver ag wire Bond
Contextual Info: V I^ W Y Vishay Telefunken Table of Package Forms Part Number Package Form Part Number Package Form Part Number Package Form TLBR5410 8 TLHR4401 11 TLMH3100 1 TLDR4400 11 TLHR4405 11 TLMH3101 1 TLDR4900 11 TLHR4600 11 TLMK3100 1 TLDR5400 TLDR5800 8 TLHR4601

DD 127 D TRANSISTOR

Abstract: FK 231 SA 220 transistor fn 1016 LTC DWG FN 1016 dp 502 t TO 220 MOT E SO18 TI 3-Lead Plastic DD Pak ltc m 5-Lead Plastic DD Pak ltc Q
Contextual Info: PACKAGE PACKAGE CROSSDIMENSIONS REFERENCE LCC METAL CAN CERDIP Ceramic Dual-In-Line METAL CANS SSOP Shrink Small Outline TSSOP Thin Shrink Small Outline SIDE BRAZED PACKAGE OUTLINE DESCRIPTION LTC NSC MOT TI LINFIN MAXIM 8-Lead Side Brazed Hermetic D8 D

Contextual Info: SPEC NO. 05-08-5014 REV. U REV A B C D E F G H J RH1014M, QUAD PRECISION OPERATIONAL AMPLIFIER REVISION RECORD DESCRIPTION INITIAL RELEASE • PAGE 2, ADDED PARAGRAPHS 3.2.1 AND 3.2.2 TO IDENTIFY “01” AND “02” AS PACKAGE OPTIONS. CHANGED THE PART NUMBER FROM”RH1014MWB14 TO “RH1014MWB”.

D2412A

Contextual Info: I* jmaam i hm HHj I HBj • *IWÊ■ * ■ WÊÊ I ■ I■ WÊÊ I Silicon Rectifiers Fast-Recovery Types Forward Current RMS RCA TYPE ■ ■ ■ ■ ■ Av. ^ R M S •o A A ■ Surge Temp. Range Operating Voltage Package ■f s m A Temp.-T^ c V RRM

Contextual Info: lozu profite t 2l COMPATIBLE 10-TAP tO G IC DELAY MODULE # T2L input and outputs # Delays stable and precise # 14-pin DIP package time is measured at the +1.5V level on the leading edge. Rise time for all modules is 4ns maximum when measured from 0.8V to 2.0V. Temperature coefficient of delay is approxi­

MS 013AA

Abstract: A18 sot MS-012AA Package MS-013-AA MS-012AB Package A16 SOT SOIC-7 xtal 32.768 MS-013AA MS-013-AB
Contextual Info: PACKAGE OUTLINES PLASTIC SOIC 0.150” body width PACKAGE DESIGNATOR L Dimensions in Inches (Based on 1 mm = 0.03937") N 0.0098 0.0075 0.1574 0.1497 0.020 0.013 0.2440 0.2284 1 2 0.050 3 0° TO 8° BSC D 0.050 0.016 0.0688 0.0532 0.0040 MIN. N Number of Leads

ASEA

Abstract: MS-013-AB MS-012-AC MS 013AA MS-013-AA MA007 MS-012AB Package
Contextual Info: PACKAGE OUTLINES PLASTIC SOIC 0.150” body width PACKAGE DESIGNATOR L Dimensions in Inches (for reference only) N 0.0098 0.0075 0.1574 0.1497 0.020 0.013 0.2440 0.2284 1 2 0.050 3 BSC D 0.050 0.016 0° TO 8° 0.0688 0.0532 0.0040 MIN. N Number of Leads

Contextual Info: TPM Multianode Tantalum Ultra Low ESR Capacitor Low ESR, high capacitance and high ripple current are the key parameters for processor filtering. Multianode configuration within a standard E case package meets these requirements. Parameters such as ESR 15mΩ, capacitance 1500 F and ripple