1800 LDMOS Search Results

Contextual Info: PXAC201202FC Confidential, Limited Internal Distribution Thermally-Enhanced High Power RF LDMOS FET 120 W, 28 V, 1800 – 2200 MHz Description The PXAC201202FC is a 120-watt LDMOS FET for use in multistandard cellular power amplifier applications in the 1800 to 2200 MHz

Contextual Info: PTMA180402EL PTMA180402FL Wideband RF LDMOS Integrated Power Amplifier 40 W, 1800 – 2000 MHz Description The PTMA180402EL and PTMA180402FL are matched, wideband 40-watt, 2-stage, LDMOS integrated amplifiers intended for use in all typical modulation formats from 1800 to 2000 MHz. These devices

Infineon moisture sensitive package

Abstract: PTMA210152M RO4350 68c21
Contextual Info: PTMA210152M Confidential, Limited Internal Distribution Wideband RF LDMOS Integrated Power Amplifier 15 W, 1800 – 2200 MHz Description The PTMA210152M is a wideband, matched, 15-watt, 2-stage LDMOS integrated amplifier intended for wideband driver applications in the 1800 to 2200 MHz band. This device is offered in

PTMA210152M

Abstract: RO4350 Infineon moisture sensitive package
Contextual Info: PTMA210152M Confidential, Limited Internal Distribution Wideband RF LDMOS Integrated Power Amplifier 15 W, 1800 – 2200 MHz Description The PTMA210152M is a wideband, matched, 15-watt, 2-stage LDMOS integrated amplifier intended for wideband driver applications in the 1800 to 2200 MHz band. This device is offered in

PTMA210152

Abstract: PTMA210152M PCC104bct-nd 210152 PTMA210152M V1 PCC104BCTND RO4350 3224W-202ETR-ND P00ECT-ND PCE3718CT-ND
Contextual Info: PTMA210152M Confidential, Limited Internal Distribution Wideband RF LDMOS Integrated Power Amplifier 15 W, 1800 – 2200 MHz Description The PTMA210152M is a wideband, matched, 15-watt, 2-stage LDMOS integrated amplifier intended for wideband driver applications in the 1800 to 2200 MHz band. This device is offered in

CD723

Contextual Info: PTMA210152M Confidential, Limited Internal Distribution Wideband RF LDMOS Integrated Power Amplifier 15 W, 1800 – 2200 MHz Description The PTMA210152M is a wideband, matched, 15-watt, 2-stage LDMOS integrated amplifier intended for wideband driver applications in the 1800 to 2200 MHz band. This device is offered in

Contextual Info: PRELIMINARY GOLDMOS Field Effect Transistor 30 Watts, 1800-2000 MHz PTF 102079* Description Key Features The PTF 102079 is a 30–watt internally matched GOLDMOS FET intended for WCDMA applications from 1800 to 2000 MHz. This LDMOS device operates at 47% efficiency with 15 dB gain. Nitride

J499

Contextual Info: PXAC201202FC Thermally-Enhanced High Power RF LDMOS FET 120 W, 28 V, 1800 – 2200 MHz Description The PXAC201202FC is a 120-watt LDMOS FET for use in multistandard cellular power amplifier applications in the 1800 to 2200 MHz frequency band. Its asymmetric and dual-path design make it ideal for

Contextual Info: PXAC201202FC Thermally-Enhanced High Power RF LDMOS FET 120 W, 28 V, 1800 – 2200 MHz Description The PXAC201202FC is a 120-watt LDMOS FET for use in multistandard cellular power amplifier applications in the 1800 to 2200 MHz frequency band. Its asymmetric and dual-path design make it ideal for

PTMA180152M

Abstract: MO 1877 01 MO-166
Contextual Info: Preliminary PTMA180152M Wideband RF LDMOS Integrated Power Amplifier 15 W, 1800 – 2000 MHz PTMA180152M* Package DSO-20-63 Description The PTMA180152M is a wideband, matched, 15-watt, 2-stage LDMOS integrated amplifier intended for wideband driver applications in the 1800 to 2000 MHz band. This device is offered in

Contextual Info: PTMA210152M Wideband RF LDMOS Integrated Power Amplifier 15 W, 28 V, 1800 – 2200 MHz Description The PTMA210152M is a wideband, matched, 15-watt, 2-stage LDMOS integrated amplifier intended for wideband driver applications in the 1800 to 2200 MHz band. This device is offered in a 20-lead thermallyenhanced overmolded package for cool and reliable operation.

BGF1801-10

Abstract: BLF1049 BGF944 ACPR400 BGF1901-10 BGF844 BLF0810-90 BLF1820-90 gsm power amplifiers 10 w BLF1
Contextual Info: EDGE GSM amplifiers Modular solutions for for base-stations 800/900/1800/1900 MHz Covering the 800, 900, 1800 and 1900 MHz ranges for power amplifiers in EDGE GSM cellular base-stations, these high-performance solutions combine a 50-Ω driver module with a final-stage transistor. Identical component outlines for

GRM422Y5V106Z050AL

Abstract: PTMA180402M RO4350
Contextual Info: PTMA180402M Confidential, Limited Internal Distribution Wideband RF LDMOS Integrated Power Amplifier 40 W, 1800 – 2100 MHz Description The PTMA180402M is a matched, wideband 2-stage, 40-watt LDMOS integrated amplifier intended for base station applications

diode C728

Abstract: RFP100200-4Y502 600S0R7BT CD 5888 IC JESD22-A114F RFP100200-4Y50-2 RFP-100200-4Y50-2 2A1306-3 PTMA210404FL R250
Contextual Info: PTMA210404FL Confidential, Limited Internal Distribution Dual Wideband RF LDMOS Power Amplifier 40 W, 1800 – 2200 MHz Description The PTMA210404FL integrates two wideband, 20-watt, 2-stage LDMOS integrated amplifiers into an open-cavity, ceramic package.

PTMA180402M

Abstract: PTMA180402M V1 marking
Contextual Info: PTMA180402M Confidential, Limited Internal Distribution Wideband RF LDMOS Integrated Power Amplifer 40 W, 1800 – 2000 MHz Description The PTMA180402M is a matched, wideband 2-stage, 40-watt LDMOS integrated amplifier intended for base station applications

GRM422Y5V106Z050AL

Abstract: PTMA180402EL PTMA180402FL RO4350 H-33265-8
Contextual Info: PTMA180402EL PTMA180402FL Confidential, Limited Internal Distribution Wideband RF LDMOS Integrated Power Amplifer 40 W, 1800 – 2000 MHz Description The PTMA180402EL and PTMA180402FL are matched, wideband 40-watt, 2-stage, LDMOS integrated amplifiers intended for use in

PTMA180402M V1

Abstract: GRM422Y5V106Z050AL JESD22-A114-F PCE3718CT-ND transistor c 2060 PTMA180402M RO4350
Contextual Info: PTMA180402M Confidential, Limited Internal Distribution Wideband RF LDMOS Integrated Power Amplifier 40 W, 1800 – 2100 MHz Description The PTMA180402M is a matched, wideband 2-stage, 40-watt LDMOS integrated amplifier intended for base station applications

Contextual Info: PTMA180402M Confidential, Limited Internal Distribution Wideband RF LDMOS Integrated Power Amplifier 40 W, 1800 – 2100 MHz Description The PTMA180402M is a matched, wideband, 2-stage, 40-watt LDMOS integrated amplifier intended for base station applications

PTMA210404FL

Abstract: R250 INFINEON marking amplifier
Contextual Info: Preliminary PTMA210404FL Confidential, Limited Internal Distribution Dual Wideband RF LDMOS Power Amplifier 40 W, 1800 – 2200 MHz Description The PTMA210404FL integrates two wideband, 20-watt, 2-stage LDMOS integrated amplifiers into an open-cavity, ceramic package.

GS -L 0.1uF Capacitor

Abstract: PTMA180402FL RO4350 GRM422Y5V106Z050AL PTMA180402EL infineon gold Marking h 498
Contextual Info: PTMA180402EL PTMA180402FL Confidential, Limited Internal Distribution Wideband RF LDMOS Integrated Power Amplifier 40 W, 1800 – 2000 MHz Description The PTMA180402EL and PTMA180402FL are matched, wideband 40-watt, 2-stage, LDMOS integrated amplifiers intended for use in

Contextual Info: PTMA180402EL PTMA180402FL Confidential, Limited Internal Distribution Wideband RF LDMOS Integrated Power Amplifier 40 W, 1800 – 2000 MHz Description The PTMA180402EL and PTMA180402FL are matched, wideband 40-watt, 2-stage, LDMOS integrated amplifiers intended for use in

Contextual Info: PTMA180402EL PTMA180402FL Confidential, Limited Internal Distribution Wideband RF LDMOS Integrated Power Amplifier 40 W, 1800 – 2000 MHz Description The PTMA180402EL and PTMA180402FL are matched, wideband 40-watt, 2-stage, LDMOS integrated amplifiers intended for use in all

P 1504 EDG

Abstract: GRM422Y5V106Z050AL PTMA180402 12 pF ceramic capacitor INFINEON 20PIN c20vd2
Contextual Info: PTMA180402M Confidential, Limited Internal Distribution Wideband RF LDMOS Integrated Power Amplifier 40 W, 28 V, 1800 – 2100 MHz Description The PTMA180402M is a matched, wideband, 2-stage, 40-watt LDMOS integrated amplifier intended for base station applications

Contextual Info: PTMA180402M Confidential, Limited Internal Distribution Wideband RF LDMOS Integrated Power Amplifier 40 W, 28 V, 1800 – 2100 MHz Description The PTMA180402M is a matched, wideband, 2-stage, 40-watt LDMOS integrated amplifier intended for base station applications