1800A Search Results

Contextual Info: 开 环 型＞＞b 系 列＞＞霍尔电流传感器 ＞＞霍尔电流传感器 HEC-B6 系列 电器特性： 规格型号 HEC800-B6 HEC1000-B6 HEC1200-B6 HEC1500-B6 HEC1800-B6 HEC2000-B6 HEC2500-B6 额定电流 800A 1000A 1200A 1500A 1800A 2000A 2500A 线性范围

TA201800A

Abstract: SCR 600 AMPERS ta201800 LT 428 BP107 TA20 scr 1500v
Contextual Info: TA20 1800A Powerex, Inc., 200 Hillis Street, Youngwood, Pennsylvania 15697-1800 412 925-7272 Powerex, Europe, S.A. 428 Avenue G. Durand, BP107, 72003 Le Mans, France (43) 41.14.14 Phase Control SCR 1800 Amperes Average 2200 Volts TA20 1800A Phase Control SCR

CM1800HC-34H

Contextual Info: MITSUBISHI HVIGBT MODULES CM1800HC-34H 3rd-Version HVIGBT High Voltage Insulated Gate Bipolar Transistor Modules HIGH POWER SWITCHING USE INSULATED TYPE CM1800HC-34H ● IC . 1800A ● VCES . 1700V

160nF

Abstract: 4500a u4200 DIM900ESM45-F000
Contextual Info: DIM900ESM45-F000 Single Switch IGBT Module DS5872-1.3 December 2007 FEATURES 10µs Short Circuit Withstand Soft Punch Through Silicon Lead Free construction KEY PARAMETERS V CES V CE sat * (typ) IC (max) I C(PK) (max) (LN25831) 4500V 2.9 V 900A 1800A *(measured at the power busbars and not the auxiliary terminals)

DFM900FXM12-A000

Contextual Info: DFM900FXM12-A000 Fast Recovery Diode Module DS5479-1.3 November 2007 LN25316 FEATURES Low Reverse Recovery Charge High Switching Speed Low Forward Voltage Drop KEY PARAMETERS VRRM VF IF IFM (typ) (max) (max) 1200V 1.9V 900A 1800A Isolated Copper Base plate

DFM900FXM12-A000

Contextual Info: DFM900FXM12-A000 DFM900FXM12-A000 Fast Recovery Diode Module DS5479-1.2 July 2001 FEATURES • Low Reverse Recovery Charge ■ High Switching Speed ■ Low Forward Voltage Drop KEY PARAMETERS VRRM VF typ (max) IF (max) IFM 1200V 1.9V 900A 1800A ■ Isolated Base

RM1800HE-34S

Abstract: JP3000 RM1800 High Voltage Diode
Contextual Info: MITSUBISHI HIGH VOLTAGE DIODE MODULE RM1800HE-34S HIGH POWER SWITCHING USE INSULATED TYPE High Voltage Diode Module RM1800HE-34S ● IF . 1800A ● VRRM . 1700V

Contextual Info: 技术信息/TechnicalInformation IGBT-模块 IGBT-modules FZ1800R12HP4_B9 IHM-B模块采用软特性的沟槽栅IGBT4 IHM-Bmodulewithsoft-switchingTrench-IGBT4 初步数据/PreliminaryData VCES = 1200V IC nom = 1800A / ICRM = 3600A 典型应用

FWJ-70A

Abstract: FWJ-1200A FWJ-40A FWJ-800A FWJ-100A FWJ-300A FWJ-50A FWJ-1000A FWJ-1400A FWJ-1800A
Contextual Info: BIF Document Semiconductor Fuse 800-2000A 1000 Volts 35785309 Size 104 6 4 2 103 6 4 2 102 Virtual Pre-Arcing Time In Seconds 6 4 FWJ-800A FWJ-1000A FWJ-1200A FWJ-1400A FWJ-1600A FWJ-1800A FWJ-2000A 2 101 6 4 2 100 6 4 2 10–1 6 4 2 10–2 6 4 2 –3 10 6

ME-44

Abstract: HPROM-0512 HARRIS PROM 0512 25KHZ HI-1800A HI-1818A HI-1828A harris 7611 E2GJ ME45
Contextual Info: BURN-IN CIRCUITS HI-1818A H I-1800A 20KÎ2 p" W r - Q - Al V CC -V >-15V V cc EN +V \ +15V A3 N.C. OUT 4 IN 4 OUT 3 IN 3 -15V Q- Aq A1 *2 -V > -15V EN +V > +15V a2 IN 1 IN 8 OUT OUT 1 IN 7 IN 2 IN 2 IN 6 IN 3 tN 5 IN 4 IN 1 - O +15V X W h 20K OUT 2 - O - W V —1

4500a

Abstract: C6250 DFM900NXM45-F000 4500V 900A
Contextual Info: DFM900NXM45-F000 Fast Recovery Diode Module DS5887-1.0 June 2006 LN24652 KEY PARAMETERS FEATURES • Low Reverse Recovery Charge • High Switching Speed • Low Forward Voltage Drop • Isolated AlSiC Base plate with AIN substrates • Dual Diodes Can be paralleled for 1800A Rating

125UR3S0700B

Contextual Info: Date:- 18 Mar, 2005 Data Sheet Issue:- 1 Ultra Rapid Semiconductor Protection Fuse European Square Body Type French Standard End Contact Voltage Rating 650V to 1250V Current Rating 63A to 1800A aR Characteristics Sizes 0, 1, 2, 3 Key Features: ™ Extremely high interrupting rating fuses for the protection of power semiconductors in accordance with

Contextual Info: DFM900FXS12-A000 Fast Recovery Diode Module DS5846-1.0 June. 2005 LN23946 FEATURES • Low Reverse Recovery Charge • High Switching Speed • Low Forward Voltage Drop • Isolated Copper Base plate • Dual Diodes Can be paralleled for 1800A Rating •

TRANSISTOR A01

Contextual Info: MITSUBISHI HVIGBT MODULES CM1800HC-34H 3rd-Version HVIGBT High Voltage Insulated Gate Bipolar Transistor Modules HIGH POWER SWITCHING USE INSULATED TYPE CM1800HC-34H ● IC . 1800A ● VCES . 1700V

Contextual Info: 技术信息/TechnicalInformation IGBT-模块 IGBT-modules FZ1800R17HE4_B9 IHM-B模块 IHM-Bmodule 初步数据/PreliminaryData VCES = 1700V IC nom = 1800A / ICRM = 3600A 典型应用 • 大功率变流器 • 电机传动 TypicalApplications • HighPowerConverters

Contextual Info: 技术信息/TechnicalInformation IGBT-模块 IGBT-modules FZ1800R17HP4_B29 IHM-B模块采用软特性的沟槽栅IGBT4 IHM-Bmodulewithsoft-switchingTrench-IGBT4 初步数据/PreliminaryData VCES = 1700V IC nom = 1800A / ICRM = 3600A 典型应用

Contextual Info: R9G0 1800A Rectifier Diode Powerex, Inc., 173 Pavilion Lane, Youngwood, Pennsylvania 15697-1800 724 925 7272 1800 Amperes/Up to 3200 Volts Description: Powerex General Purpose Rectifiers are designed with high blocking voltage capability with low forward on-state voltage to minimize

Contextual Info: UMS-1800-A16-G UMS-1800A16-GOCTAVE BAND VOLTAGE CONTROLLED OSCILLATOR OCTAVE BAND VOLTAGE CONTROLLED OSCILLATOR Package: A16, 12.7mm x 12.7mm x 3.43mm VCC Features  Octave Band Tuning  Frequency: 900MHz to 1800MHz  Resonator: Microstrip  PCB: Rogers

HI-1800

Contextual Info: HARRIS -/ L / L -/ I5 HI-1800A SEM ICO NDUCTOR P R O G R A M S DIVISIO N A DIVISION OF HARHIS CORPORATION Low Leakage Dual DPST Analog Switch DESCRIPTION FEATURES • L E A K A G E T Y P. 40nA • S IG N A L R A N G E ±15V • " O N " R E S IS T A N C E

SWITCHING TRANSISTOR 144

Abstract: CM1800HC-34N igbt transistor
Contextual Info: MITSUBISHI HVIGBT MODULES CM1800HC-34N 4th-Version HVIGBT High Voltage Insulated Gate Bipolar Transistor Modules HIGH POWER SWITCHING USE INSULATED TYPE CM1800HC-34N ● IC . 1800A ● VCES . 1700V

CM1800HC-34N

Contextual Info: 三菱半導体〈HVIGBTモジュール〉 CM1800HC-34N 4th-Version HVIGBT High Voltage Insulated Gate Bipolar Transistor モジュール 大電力スイッチング用 絶縁形 CM1800HC-34N ¡IC …………………………………………… 1800A

DFM900FXM18-A000

Contextual Info: DFM900FXM18-A000 DFM900FXM18-A000 Fast Recovery Diode Module DS5441-1.3 April 2001 FEATURES • Low Reverse Recovery Charge ■ High Switching Speed ■ Low Forward Voltage Drop KEY PARAMETERS VRRM VF typ (max) IF (max) IFM 1800V 2.0V 900A 1800A ■ Isolated Base

K109

Contextual Info: VFVCO-1800A Voltage Controlled Oscillator VFVCO-1800A Supply Voltage Supply Current Tuning Voltage FREQUENCY MIN 11 TYP 12 1.7 MAX 13 40 0.5 1400 12 MHz MHz MHz/V dBm -84 -104 dBc/Hz dBc/Hz -12 -70 5.0 25.0 47 dBc dBc MHz.V MHz pF Ω MΩ °C °C 2200 Tuning Sensitivity

DFM900FXM18-A000

Contextual Info: DFM900FXM18-A000 DFM900FXM18-A000 Fast Recovery Diode Module DS5441-1.3 April 2001 FEATURES • Low Reverse Recovery Charge ■ High Switching Speed ■ Low Forward Voltage Drop KEY PARAMETERS VRRM VF typ (max) IF (max) IFM 1800V 2.0V 900A 1800A ■ Isolated Base