1800MHZ TRANSISTOR Search Results

SG911A

Abstract: TO-129 c 129 transistor
Contextual Info: GAE GREAT AMERICAN ELECTROINCS SG911A Silicon NPN power UHF transistor SG911A is designed for amplifier, frequency multipliers, and auto-oscillators applications in the 1000-1800Mhz frequency range. Output Power: Frequency Range: Voltage: Package Type: Common Emitter Configuration

"Frequency Multipliers"

Abstract: SG911B TO-129 SG911
Contextual Info: GAE GREAT AMERICAN ELECTROINCS SG911B Silicon NPN power UHF transistor SG911B is designed for amplifier, frequency multipliers, and auto-oscillators applications in the 1000-1800Mhz frequency range. Output Power: Frequency Range: Voltage: Package Type: Common Emitter Configuration

Contextual Info: 19-1506; Rev 0; 7/99 GSM900/DCS1800/PCS1900 Triple-Band, Low-Noise Amplifiers Features ♦ Wide Operating Frequency Range 800MHz to 1000MHz MAX2651 1800MHz to 2000MHz (MAX2651/MAX2653) ♦ Excellent Low-Noise Performance 1.2dB over GSM Receive Band (MAX2651)

Regulated linear Power Supply Schematic Diagram

Abstract: 3v Regulated Power Supply Schematic Diagram schematic diagram 50 VDC POWER SUPPLY schematic diagram 32 VDC POWER SUPPLY RF3120 1800mhz transistor 4C201
Contextual Info: RF3120 Preliminary 2 3V 1800MHZ LINEAR AMPLIFIER MODULE Typical Applications • 3V CDMA Korean-PCS Handsets • Spread-Spectrum Systems POWER AMPLIFIERS 2 Product Description The RF3120 is a high-power, high-efficiency linear amplifier IC targeting 3V handheld systems. The device is

Contextual Info: RF2163 RF21633 V, 2.5GHz Linear Power Amplifier 3V, 2.5GHz LINEAR POWER AMPLIFIER 19dB Small Signal Gain  High Power Added Efficiency  Patent Pending Power Sense Technology  1800MHz to 2500MHz Frequency Range 2.5GHz ISM Band Applications  PCS Communication Systems

SMD Transistor Y34

Abstract: Y33 SMD TRANSISTOR SMD Transistor Y33 marking Y33 pnp smd y34 smd marking y33 2SA1462 marking y34
Contextual Info: Transistors IC SMD Type PNP Silicon Epitaxia Transistor 2SA1462 SOT-23 Unit: mm +0.1 2.9-0.1 +0.1 0.4-0.1 1 0.55 High speed,high voltage switching. High ft:fT=1800MHz TYP. +0.1 1.3-0.1 +0.1 2.4-0.1 0.4 3 Features 2 +0.1 0.95-0.1 +0.1 1.9-0.1 +0.05 0.1-0.01

AMX2022

Abstract: MAX2022 MAX2022ETX MAX2022ETX-T MAX5875 MAX5895
Contextual Info: 19-3572; Rev 0; 4/05 ILABLE N KIT AVA IO T A U L A EV High-Dynamic-Range, Direct Upconversion 1500MHz to 2500MHz Quadrature Modulator The MAX2022 low-noise, high-linearity, direct upconversion quadrature modulator is designed for single and multicarrier 1800MHz to 2200MHz UMTS/WCDMA,

transistor 2.4GHz amplifier schematic wifi

Contextual Info: RF5117 3V, 1.8GHz TO 2.8GHz LINEAR POWER AMPLIFIER +30dBm Saturated Output Power  High Linearity   VCC VCC 14 13 RF IN 1 12 RF OUT BIAS GND1 2 11 RF OUT PWR SEN 3 10 RF OUT Bias PWR REF 4 1800MHz to 2800MHz Frequency Range +17dBm PO, 11G, <3% EVM

Contextual Info: RF5117 3V, 1.8GHz TO 2.8GHz LINEAR POWER AMPLIFIER +30dBm Saturated Output Power „ High Linearity „ „ VCC VCC 14 13 RF IN 1 12 RF OUT BIAS GND1 2 11 RF OUT PWR SEN 3 10 RF OUT Bias PWR REF 4 1800MHz to 2800MHz Frequency Range +17dBm PO, 11G, <3% EVM 9 NC

Contextual Info: RF5117 3V, 1.8GHz TO 2.8GHz LINEAR POWER AMPLIFIER +30dBm Saturated Output Power „ High Linearity „ „ VCC VCC 14 13 RF IN 1 12 RF OUT BIAS GND1 2 11 RF OUT PWR SEN 3 10 RF OUT Bias PWR REF 4 1800MHz to 2800MHz Frequency Range +17dBm PO, 11G, <3% EVM 9 NC

Contextual Info: RF3120 3V 1800MHZ LINEAR AMPLIFIER MODULE Typical Applications • 3V CDMA Korean-PCS Handsets • Spread-Spectrum Systems U F pg O ra R de d N P E ro W du ct D R ES F3 10 IG 0- N 3K S Product Description The RF3120 is a high-power, high-efficiency linear amplifier IC targeting 3V handheld systems. The device is

54MBPS

Abstract: RF5117 RF5117PCK-410
Contextual Info: RF5117 3V, 1.8GHz TO 2.8GHz LINEAR POWER AMPLIFIER +30dBm Saturated Output Power  High Linearity   VCC VCC 14 13 12 RF OUT BIAS GND1 2 11 RF OUT PWR SEN 3 10 RF OUT Bias PWR REF 4 1800MHz to 2800MHz Frequency Range +17dBm PO, 11G, <3% EVM 9 NC 5 6

ph43

Abstract: CMDA2000 MWS11-PH43-CS PH41 MWS11-PH41-CS
Contextual Info: MWS11-PH4x-CS W-CDMA Power Amplifier A M I C R O S E M I C O M P A N Y P RELIMINARY KEY FEATURES DESCRIPTION and other linear applications in the 1800MHz to 2000MHz band. There are two 16-pin package versions for this Power Amplifier. One is a 3mm x 3mm chip scale package

Contextual Info: RF5117 3V, 1.8GHz TO 2.8GHz LINEAR POWER AMPLIFIER  26dB Small Signal Gain  High Linearity  1800MHz to 2800MHz Frequency Range  VCC VCC 14 13 RF IN 1 12 RF OUT BIAS GND1 2 11 RF OUT PWR SEN 3 10 RF OUT Bias PWR REF 4 +17dBm PO, 11G, <3% EVM 9 NC

Contextual Info: MWS11-PH41-CS W-CMDA Power Amplifier A M I C R O S E M I C O M P A N Y P RELIMINARY and other linear applications in the 1800MHz to 2000MHz band. There are two 16-pin package versions for this Power Amplifier. One is a 3mm x 3mm chip scale package CSP with external input/output match

CAPACITOR M2B

Abstract: TRANSISTOR W25 w25 transistor TA0035
Contextual Info: TA0035
 TA0035 A Dynamic Current Control Scheme for RF Power Amplifiers           As shown in Figure 1, the system described here consists of a two stage, 20dB gain PA driver operating between 1800MHz to 1900MHz and a support chip

transistor 1800MHz

Contextual Info: SONY PRELIMINARY DATA SHEET Dual-Band 3 Volt Power Amplifier for GSM900/1800 Applications CXG1047FN - Dual Band The CXG1047 Dual Band GaAs PA is a 3 Stage Power Amplifier that may be used for both GSM900 and GSM1800 applications. To achieve minimum die-size and package dimensions, it contains one amplifier

AN1352

Abstract: START420 Transistor W03
Contextual Info: AN1352 APPLICATION NOTE A LNA OPTIMIZED FOR HIGH IP3out AT 1.9GHz USING THE NPN Si START420 TRANSISTOR F. Caramagno - G. Privitera Data at 1.9GHz 3V, 20mA Gain = 18dB, IP3out = 23dBm, N F = 1.9dB, RLin/out > 13dB 1. INTRODUCTION. START420 is a product of the START Family (ST Advanced Radio frequency Transistor). It is a high

Transistor W03

Abstract: AN1352 START420
Contextual Info: AN1352 APPLICATION NOTE A LNA OPTIMIZED FOR HIGH IP3out AT 1.9GHz USING THE NPN Si START420 TRANSISTOR F. Caramagno - G. Privitera Data at 1.9GHz 3V, 20mA Gain = 18dB, IP3out = 23dBm, NF = 1.9dB, RLin/out > 13dB 1. INTRODUCTION. START420 is a product of the START Family (ST Advanced Radio frequency Transistor). It is a high

transistor 1800MHz

Abstract: r.f. amplifier 30mhz
Contextual Info: RF3826 RF3826 30MHz to 2500MHz, 9W GaN Wideband Power Amplifier 30MHz TO 2500MHz, 9W GaN WIDEBAND POWER AMPLIFIER Package: AlN Leadless Chip Carrier / SO8 VGS Pin 1 Features  Advanced GaN HEMT Technology  Output Power of 9W  Advanced Heat-Sink Technology

rf3826

Abstract: ERJ-3GEYJ821 ERJ-3GEYJ391 transistor 1800MHz
Contextual Info: RF3826 RF3826 30MHz to 2500MHz, 9W GaN Wideband Power Amplifier 30MHz TO 2500MHz, 9W GaN WIDEBAND POWER AMPLIFIER Package: AlN Leadless Chip Carrier / SO8 VGS Pin 1 Features  Advanced GaN HEMT Technology  Output Power of 9W  Advanced Heat-Sink Technology

404j

Abstract: rf3826 transistor 1800MHz 100A0R9BT150X
Contextual Info: RF3826 RF3826 30MHz to 2500MHz, 9W GaN Wideband Power Amplifier 30MHz TO 2500MHz, 9W GaN WIDEBAND POWER AMPLIFIER Package: AlN Leadless Chip Carrier / SO8 VGS Pin 1 Features  Advanced GaN HEMT Technology  Output Power of 9W  Advanced Heat-Sink Technology

Transistor W03

Abstract: 1800mhz rf frequency power amplifier circuit AN1352 START420 w03 TRANSISTOR
Contextual Info: AN1352 APPLICATION NOTE A LNA OPTIMIZED FOR HIGH IP3out AT 1.9GHz USING THE NPN Si START420 TRANSISTOR F. Caramagno - G. Privitera Data at 1.9GHz 3V, 20mA Gain = 18dB, IP3out = 23dBm, NF = 1.9dB, RLin/out > 13dB 1. INTRODUCTION. START420 is a product of the START Family (ST Advanced Radio frequency Transistor). It is a high

EC 401 TRANSISTOR

Abstract: Gan hemt transistor RFMD transistor 1800MHz
Contextual Info: RF3826 RF3826 30MHz to 2500MHz, 9W GaN Wideband Power Amplifier 30MHz TO 2500MHz, 9W GaN WIDEBAND POWER AMPLIFIER Package: AlN Leadless Chip Carrier / SO8 VGS Pin 1 Features  Advanced GaN HEMT Technology  Output Power of 9W  Advanced Heat-Sink Technology