1802 NPN TRANSISTOR Search Results

Contextual Info: I O rd e rin g n u m b e r : EN 2 1 1 BB 2SB1202/2SD 1802 N 0 .2 1 1 3 B PNP/NPN Epitaxial Planar Silicon Transistors High-Current Switching Applications A pplications • Voltage regulators, relay drivers, lamp drivers, electrical equipment Features . Adoption of FBET, MBIT processes

Contextual Info: 1714-1802 Transistors Si NPN Power BJT Military/High-RelN V BR CEO (V)180ö V(BR)CBO (V)190 I(C) Max. (A)10 Absolute Max. Power Diss. (W)25 Maximum Operating Temp (øC)175õ I(CBO) Max. (A) @V(CBO) (V) (Test Condition) V(CE)sat Max. (V) @I(C) (A) (Test Condition)

Contextual Info: 1713-1802 Transistors Si NPN Power BJT Military/High-RelN V BR CEO (V)180ö V(BR)CBO (V)190 I(C) Max. (A)5.0 Absolute Max. Power Diss. (W)115 Maximum Operating Temp (øC)175õ I(CBO) Max. (A)4.0m÷ @V(CBO) (V) (Test Condition) V(CE)sat Max. (V) @I(C) (A) (Test Condition)

Contextual Info: 1718-1802 Transistors Si NPN Power BJT Military/High-RelN V BR CEO (V)180 V(BR)CBO (V)180 I(C) Max. (A)10 Absolute Max. Power Diss. (W)33 Maximum Operating Temp (øC)175õ I(CBO) Max. (A)200u÷ @V(CBO) (V) (Test Condition) V(CE)sat Max. (V) @I(C) (A) (Test Condition)

Contextual Info: 1717-1802 Transistors Si NPN Power BJT Military/High-RelN V BR CEO (V)180ö V(BR)CBO (V)190 I(C) Max. (A)5.0 Absolute Max. Power Diss. (W)35 Maximum Operating Temp (øC)175õ I(CBO) Max. (A)4.0m÷ @V(CBO) (V) (Test Condition) V(CE)sat Max. (V) @I(C) (A) (Test Condition)

Contextual Info: 1711-1802 Transistors Si NPN Power BJT Military/High-RelN V BR CEO (V)180ö V(BR)CBO (V)190 I(C) Max. (A)5.0 Absolute Max. Power Diss. (W)35 Maximum Operating Temp (øC)175õ I(CBO) Max. (A)4.0m÷ @V(CBO) (V) (Test Condition) V(CE)sat Max. (V) @I(C) (A) (Test Condition)

Contextual Info: A580-1802 Transistors Si NPN Power BJT Military/High-RelN V BR CEO (V)180ö V(BR)CBO (V) I(C) Max. (A)10 Absolute Max. Power Diss. (W)175 Maximum Operating Temp (øC)175õ I(CBO) Max. (A)135m° @V(CBO) (V) (Test Condition) V(CE)sat Max. (V) @I(C) (A) (Test Condition)

Contextual Info: 1716-1802 Transistors Si NPN Power BJT Military/High-RelN V BR CEO (V)180ö V(BR)CBO (V)180 I(C) Max. (A)10 Absolute Max. Power Diss. (W)50 Maximum Operating Temp (øC)175õ I(CBO) Max. (A)200u÷ @V(CBO) (V) (Test Condition) V(CE)sat Max. (V) @I(C) (A) (Test Condition)

bta 05

Abstract: BTA05
Contextual Info: SIEMENS NPN Silicon AF Transistors SMBTA 05 SMBTA 06 • High breakdown voltage • Low collector-emitter saturation voltage • Complementary types: SMBTA 55 SMBTA 56 PNP Type Marking Ordering Code (tape and reel) Pin Configuration 1 2 3 Package1) SMBTA 05

2SA1802

Abstract: 2SC4681
Contextual Info: T O S H IB A 2SC4681 TOSHIBA TRANSISTOR STROBE FLASH APPLICATIONS SILICON NPN EPITAXIAL TYPE 2SC4681 MEDIUM POWER AMPLIFIER APPLICATIONS • • • • E x cellen t hFE L inearity : hFE 1 = 2 0 0 - 6 0 0 (V c e = 2 V , I c = 0.5 A) : h pE (2) = 140 (M in.) (V q e = 2 V , I c = 3 A)

BD 61 9 40

Contextual Info: 2SC D • ô23StQS 000437^ û W S IE f i , NPN Silicon Epibase Transistors 7"’- 3 3 - 07 - 25C 0 *3 7 9 BD 611 0 - r o SIEMENS AKTIENGESELLSCHAF l î l BD 619 The transistors BD 6 1 1 , BD 6 1 3 r BD 6 1 5 , BD 6 1 7 , and BD 6 1 9 are NPN silicon epibase

b0615

Abstract: b0613 bo 615 8 HJC bd 426 BD 615 transistors q62702 BD PNP siemens 611 b0617
Contextual Info: 2SC D • ô23StQS 000437^ û W S IE f i , NPN Silicon Epibase Transistors 7"’- 3 3 - 07 - 25C 0 *3 7 9 BD 611 0 - SIEMENS AKTIENGESELLSCHAF BD 619 The transistors BD 6 1 1 , BD 6 1 3 r BD 6 1 5 , BD 6 1 7 , and BD 6 1 9 are NPN silicon epibase

Contextual Info: SIEMENS BFT 92W PNP Silicon RF Transistor • For broadband amplifiers up to 2GHz at collector currents up to 20mA • Complementary type: BFR 92W NPN ESP: Electrostatic discharge sensitive device, observe handling precaution! Pin Configuration BFT 92W W1s

DLS-4201

Abstract: fpm 250 airflow Warren GV 250fpm fp-m alarm DLS4203
Contextual Info: THE NEW WARREN G-V "THERMUUOOR" SWITCH MONITORS FORCED AIR COOLING SYSTEMS WITH TWO LOGIC OUTPUTS _ * 6ENL SIG/ilARREN G-V S3E 1 • 3=11=1802 0 0 0 0 8 3 3 1T7 H i III AR D L S S e r ie s only from WARREN G-V -r- DESCRIPTION Warren G-V’s new thermal emulator, or

AD558

Abstract: AD558J AD558JN AD558JP AD558K interfacing of ad558
Contextual Info: FUNCTIONAL BLOCK DIAGRAM CONTROL INPUTS I2L CONTROL LOGIC LSB DB7 DB6 DB4 DB5 CE LSB DB3 CS DB1 GND DIGITAL INPUT DATA BUS DB2 FEATURES Complete 8-Bit DAC Voltage Output–2 Calibrated Ranges Internal Precision Bandgap Reference Single-Supply Operation: +5 V to +15 V

interfacing of ad558

Abstract: AD558KP cdp 1802
Contextual Info: BACK FUNCTIONAL BLOCK DIAGRAM CONTROL INPUTS I2L CONTROL LOGIC LSB DB7 DB6 DB4 DB5 CE LSB DB3 CS DB1 GND DIGITAL INPUT DATA BUS DB2 FEATURES Complete 8-Bit DAC Voltage Output–2 Calibrated Ranges Internal Precision Bandgap Reference Single-Supply Operation: +5 V to +15 V

interfacing of ad558

Abstract: ad558jn ad558sd AD558 CDP-1802 AD558J AD558K AD558S
Contextual Info: FUNCTIONAL BLOCK DIAGRAM CONTROL INPUTS I2L CONTROL LOGIC LSB DB7 DB6 DB4 DB5 CE LSB DB3 CS DB1 GND DIGITAL INPUT DATA BUS DB2 FEATURES Complete 8-Bit DAC Voltage Output–2 Calibrated Ranges Internal Precision Bandgap Reference Single-Supply Operation: +5 V to +15 V

Contextual Info: DACPORT Low Cost, Complete ixP-Compatible 8-Bit DAC AD558 ANALOG DEVICES □ FEATURES Complete 8-Bit DAC Voltage Output - 2 Calibrated Ranges Internal Precision Band-Gap Reference Single-Supply Operation: +5V to +15V Full Microprocessor Interface Fast: 1ms Voltage Settling to ±1/2LSB

15J102

Abstract: Transistor 2SC4288A Transistor 2SA 2SB 2SC 2SD Drive IC 2SC3346 2sa 102 transistor transistor 2SA 101 50J301 02SC5030 T15J103 Driver IC 2SC3346
Contextual Info: L -S T M T 0 -9 2 M 0 D T Y P E POWER TRANSISTOR V ’CEO \(V> 10 30 40 50 60 80 100 120 180 2SA949U50VI 2AC2229(150V) 0.05 200 250 2SA1321 2SC3334 300 2SC5122I400V) 2SA1145U50V) 2SC2705(!50V) 2SC2230(160V) 0.1 2SC2482 2SC2230A 2SA817A 0.4 2SC1627A 2SA1811

gto Gate Drive circuit

Abstract: TIP 133c transistor GTO SCR SCR GTO die N648 GTO MOTOROLA 12n06
Contextual Info: EB108 Prepared by Al Pshaenich Power Products Applications RELATIVE EFFICIEN CIES OF MOTOROLA POWER SEMICONDUCTORS IN A PWM DC MOTOR CONTROLLER INTRODUCTION The prime requisite of a power switch, semiconductor or otherwise, is to transfer the maximum power to the

interfacing of ad558

Abstract: AD558KD
Contextual Info: DACPORT Low Cost, Complete M-P-Compatible 8-Bit DflC AD558 ANALOG DEVICES □ FEATURES Complete 8-Bit DAC Voltage Output — 2 Calibrated Ranges Internal Precision Band-Gap Reference Single-Supply Operation: +5V to +15V Full Microprocessor Interface Fast: Iju Voltage Settling to ±1/2LSB

Contextual Info: TECHNICAL NOTE Single-chip Type with Built-in FET Switching Regulator Series Low Noise Step-down Switching Regulator BD8966FVM ●Description ROHM’s high efficiency step-down switching regulator BD8966FVM is a power supply designed to produce a low voltage

Contextual Info: TECHNICAL NOTE Single-chip Type with Built-in FET Switching Regulator Series Low Noise Step-down High Efficiency Step-down Switching Regulator with Built-in Power MOSFET BD8966FVM ●Description ROHM’s high efficiency step-down switching regulator BD8966FVM is a power supply designed to produce a low voltage

Equivalence transistor

Abstract: FZ 76 capacitor BD8966FVM BD9106FVM CMD6D11B MCR10 VLF5014AT-4R7M1R1 rohm MCR10
Contextual Info: TECHNICAL NOTE Single-chip Type with Built-in FET Switching Regulator Series Low Noise Step-down Switching Regulator BD8966FVM ●Description ROHM’s high efficiency step-down switching regulator BD8966FVM is a power supply designed to produce a low voltage