180UM Search Results

Contextual Info: TGF2018 180um Discrete GaAs pHEMT Applications •     Defense & Aerospace High-Reliability Test and Measurement Commercial Broadband Wireless Product Features         Functional Block Diagram Frequency Range: DC - 20 GHz

Contextual Info: TGF2018 180um Discrete GaAs pHEMT Applications • • • • • Defense & Aerospace High-Reliability Test and Measurement Commercial Broadband Wireless Product Features • • • • • • • • Functional Block Diagram Frequency Range: DC - 20 GHz

0.3mm pitch csp package

Abstract: 0.3mm pitch package bga 0.3mm pitch BGA jp smd code AN100926-26-JP AN-1112 micro pitch BGA ALIVH ic micro AN1112
Contextual Info: ご注意 ：日本語のア プ リ ケーシ ョ ン ・ ノ ー ト は参考資料 と し て提供 し てお り 内容が 最新で ない場合があ り ます。 製品のご使用に際 し ては、 必ず最新の英文ア プ リ ケーシ ョ ン ・ ノ ー ト を ご確認 く だ さ い。

k351

Abstract: common-drain
Contextual Info: SEMICONDUCTOR K3519PQ-XH TECHNICAL DATA Common-Drain Dual N-Channel Enhancement Mode Field Effect Transistor General Description The K3519PQ-XH is a Dual N-channel MOSFET designed for use as a bi-directional load switch, facilitated by its common-drain configuration.

2SC3355 SPICE MODEL

Abstract: transistor C2003 C319B MGF1412 RF TRANSISTOR 10GHZ MRF134 rf model .lib file 2SK571 MGF1402 MRF9331 pb_hp_at41411_19921101
Contextual Info: Vendor Component Libraries RF Transistor Library May 2003 Notice The information contained in this document is subject to change without notice. Agilent Technologies makes no warranty of any kind with regard to this material, including, but not limited to, the implied warranties of merchantability and fitness

Contextual Info: FPF3003 IntelliMAX Full Functional Input Power Path Management Switch for Dual-Battery Portable System Features Description • • The FPF3003 is a single-chip solution for dual-battery power-path switching, including integrated P-channel switches and analog control features. The input voltage

AN-1112

Abstract: 0.3mm pitch BGA ALIVH 0.3mm pitch csp package SMD CODE AN-1112 national
Contextual Info: ご注意 ：日本語のア プ リ ケーシ ョ ン ・ ノ ー ト は参考資料 と し て提供 し てお り 内容が 最新で ない場合があ り ます。 製品のご使用に際 し ては、 必ず最新の英文ア プ リ ケーシ ョ ン ・ ノ ー ト を ご確認 く だ さ い。

Contextual Info: 2KG028075JL_Datasheet 2KG028075JL SWITCHING DIODE CHIPS DESCRIPTION ¾ 2KG028075JL is a high speed switching diode chip for plastic package fabricated in planar technology. ¾ The chip can be encapsulated as 1N4148 switching diode. ¾ The chip has several thicknesses for choice, the top

Contextual Info: OPA8745H Infrared LED Chip GaAlAs/GaAlAs High Speed / N Side-Up 1. Material Substrate GaAlAs P Type Removed Epitaxial Layer GaAlAs (N/P Type) 2. Electrode N(Cathode) Side Gold Alloy P(Anode) Side Gold Alloy 3. Electro-Optical Characteristics Parameter Symbol

ED-714IRP

Contextual Info: ED-714IRP AlGaAs/AlGaAs Highspeed IrED Chips 865 nm Features : Typical Applications : • AlGaAs/AlGaAs wafer • Very high power • High speed • High performance • Superior thermal stability • IrDA • Encoder • Data Communication Outline Dimensions : Unit: um

ED-712IRV

Contextual Info: ED-712IRV AlGaAs/AlGaAs Highspeed IrED Chips 880 nm Features : Typical Applications : • AlGaAs/AlGaAs wafer • Very high power • High speed • High performance • Superior thermal stability • IrDA • Encoder • Data Communication Outline Dimensions : Unit: um

ed-914irp

Contextual Info: ED-914IRP AlGaAs/AlGaAs Highspeed IrED Chips 850 nm Features : Typical Applications : • AlGaAs/AlGaAs wafer • Very high power • High speed • High performance • Superior thermal stability • IrDA • Encoder • Data Communication Outline Dimensions : Unit: um

ED-712IRP

Contextual Info: ED-712IRP AlGaAs/AlGaAs Highspeed IrED Chips 865 nm Features : Typical Applications : • AlGaAs/AlGaAs wafer • Very high power • High speed • High performance • Superior thermal stability • IrDA • Encoder • Data Communication Outline Dimensions : Unit: um

Contextual Info: 外形寸法図・参考パターン寸法 ●SOD-123A Unit: mm •外形寸法図 1.50-1.70 0.45-0.65 0.08-0.15 3.55-3.85 2.60-2.80 0-0.1 1.05-1.25 Cathode Bar SOD-123A Unit: mm ■参考パターンレイアウト 2.0 1.5 1.5 はんだ厚： 180 m 参考）

Contextual Info: SEMICONDUCTOR K3519PQ-XH TECHNICAL DATA Common-Drain Dual N-Channel Enhancement Mode Field Effect Transistor General Description The K3519PQ-XH is a Dual N-channel MOSFET designed for use as a bi-directional load switch, facilitated by its common-drain configuration.

Contextual Info: 2ES032XXXJL 2ES032XXXJL SERIES TRANSIENT VOLTAGE SUPPRESSORS DESCRIPTION ¾ 2ES032XXXJL series are transient voltage suppressors diode chips for plastic package that fabricated in silicon epitaxial planar technology; ¾ Excellent clamping capability; ¾ Fast response time ;

mitsubishi APD

Abstract: PD8* APD Photo Diodes tia amplifier ghz PD839C4 mitsubishi receiver "photo diodes" APD 1550nm PD839C4 equivalent
Contextual Info: MITSUBISHI PHOTO DIODES PD839C4 InGaAs AVALANCHE PHOTO DIODES PD839C4 Feature DESCRIPTION PD839C4 is a φ35µm InGaAs Avalanche Photodiodes APD with Trans Impedance Amplifier(TIA). This APD with TIA features a high-speed response and low noise, and is suitable for 2.5Gb/s optical

HI155G1S02X

Abstract: HI155G1S14X HI155G HI155G1S07X
Contextual Info: High Intensity Pulsed Laser Diodes 1550 HI-Series FEATURES • High intensity output • Low divergence  0.5 W/A efficiency  Excellent temperature stability  Hermetic and custom designed package  High Reliability APPLICATIONS  Eye safe range finding

LSI LOGIC

Abstract: 700UM
Contextual Info: Chip Planning w/ Avant! Planet -PL Workbook G11 Copyright LSI Logic Corporation 1999, 2000 All Rights Reserved. Chip Planning w/ Avant! Planet -PL Software Training Workbook (G11) Produced by the Customer Education Group May 2000 Copyright LSI Logic Corporation 1999, 2000. All rights reserved.

D739A

Abstract: PD739A13
Contextual Info: MITSUBIS]HI ELECTR] C CORPORATION * DATE: SPECIFICATION -SHEET July 20,’00 PREPARED BY: S.Funaba CHECKED BY: S.Minamihara Y.Tanaka APPROVED BY: A.Takemoto 1. TYPE : PD739A13 2. APPLICATOIN : OPTICAL COMMUNICATION 3. STRUCTURE : <>20 \im InGaAs PIN PHOTODIODE with PRE-AMPLIFIER

yb 0d

Contextual Info: Chip EMI Filters Chip EMI Filters Type: EXCCET • Features ■ Recommended Applications ● Rated current 2 A max. ● Eight capacitance values in a wide range, related to the noise frequency ● Suitable for narrow pitch insertion ● Suitable for applications requiring thin design

Contextual Info: ED-714IR AlGaAs/AlGaAs Highspeed IrED Chips 870 nm Features : Typical Applications : • AlGaAs/AlGaAs wafer • Very high power • Highspeed • High performance • Superior thermal stability • IrDA • Encoder • Data Communication Outline Dimensions : Unit: um

Contextual Info: ADVANCE INFORMATION — CONFIDENTIAL AND PROPRIETARY — DO NOT DISTRIBUTE FPF3003 IntelliMAX Full Functional Input Power Path Management Switch for Dual-Battery Portable System Features Description • • The FPF3003 is a single-chip solution for dual-battery

Photo Diodes

Abstract: tia amplifier ghz PD739C13 mitsubishi receiver
Contextual Info: MITSUBISHI PHOTO DIODES PD739C13 InGaAs PIN PHOTO DIODES PD739C13 Feature DESCRIPTION PD739C13 is a φ20µm InGaAs pin photodiodes with Trans-Impedance Amplifier TIA . This PD with TIA features a high-speed response and low noise, and is suitable for 2.5Gb/s optical