18160L Search Results

D42S18160

Abstract: d42s181 D42S1816 UPD42S18160LG5A-60
Contextual Info: D A T A SHEET / MOS INTEGRATED CIRCUIT /¿ P D 4 2 S 1 6 1 6 0 L , 4 2 1 6 1 6 0 L. 4 2 S 1 8 1 6 0 L , 4 2 1 8 1 6 0 L 3.3 V OPERATION 16 M-BIT DYNAMIC RAM 1 M-WORD BY 16-BIT, FAST PAGE MODE, BYTE READ/WRITE MODE Description The /¿PD42S16160L, 4216160L, 4 2S 18160L, 4 2 18160L are 1,048, 576 w ords by 16 bits CMOS dynam ic RAMs.

NEC 4216160

Contextual Info: MOS INTEGRATED CIRCUIT f iPD42S16160,4216160,42S18160,4218160 16 M -BIT DYNAM IC RAM 1 M -W ORD BY 16-BIT, FAST PAGE MODE, BYTE READ/WRITE MODE DESCRIPTION The mPD42S16160, 4216160, 42S18160, 4218160 are 1 048 576 words by 16 bits dynamic CMOS RAMs. These differ in refresh cycle and the /iPD42S16160, 42S18160 can execute CAS before RAS self refresh (see

Contextual Info: Barrier Block Accessories Fanning Strips Catalog Numbers and Dimensions for Fanning Strips for 140 Series Terminal Blocks Straight Type Dimensions Catalog No. 6-160B-R Catalog No. 6-160-R Ordering Information No. of Terminals 2 3 4 5 6 7 8 9 10 11 12 13 14

Contextual Info: DATA SHEET MOS INTEGRATED CIRCUIT ¿¿PD4 2 S 1 8 1 6 0 L , 4 2 1 8 1 6 0 L 3.3 V OPERATION 16 M-BIT DYNAMIC RAM 1 M-WORD BY 16-BIT, FAST PAGE MODE, BYTE READ/WRITE MODE The ,18160L, 18160L are 1,048, 576 words by 16 bits CMOS dynamic RAMs. The fast page mode and

Contextual Info: N EC MOS INTEGRATED CIRCUIT _ _ _ _ _ _ _ _ HPD42S16160L, 4216160L, 18160L, 18160L 3.3 V OPERATION 16M-BIT DYNAMIC RAM 1M-WORD BY 16-BIT, FAST PAGE MODE, BYTE READ/WRITE MODE DESCRIPTION The fiPD42S16160L, 4216160L, 18160L, 18160L are 1 048 576 w o rd s by 16 bits d yn a m ic CMOS RAMs.

DC-37PTI

Abstract: ms24266r bacc63bn LGA 478 SOCKET PIN LAYOUT 94v-0 lcd display BACC45 BACC63CB bacc10gh BACC63BV MIL-C-27500
Contextual Info: Catalog No. C-865 CIN:APSE High Speed Interconnect Technology CIN:APSE ® FEATURES High-Speed Interconnect Technology • High signal speed capability enabling frequencies greater than 20 GHz. ■ Z-Axis, solderless, compression mount interconnect system.

5-176-3 terminal block

Abstract: mini circuits 15542 MS14141 DIN 18541 8-32X3 s31512 mini 15542 P-306-CCE 5-140-Y E61245
Contextual Info: COMMERCIAL Barrier Blocks Circular Mini DIN BNC Jones Plugs Edge Connectors Commercial [.050” 1.27mm Density Solder Introduction Cup/Wire D-Microminiature] Cinch Commercial Products, consisting of Jones Plugs and Sockets, Barrier Blocks, Edge Cards, Two-Piece Commercial Dins,

EZ 929

Abstract: S1616
Contextual Info: DATA SHEET NEC / MOS INTEGRATED CIRCUIT _ _ _ _ _ _ _ _ //¿PD42S16160L, 4216160L, 18160L, 18160L 3.3 V OPERATION 16 M-BIT DYNAMIC RAM 1 M-W ORD B Y 16-BIT, FA ST P A G E M ODE, B Y T E READ/WRITE M O D E D escrip tion T h e ¿ iP D 4 2 S 1 6 1 6 0 L , 4 2 1 6 1 6 0 L , 4 2 S 1 6 1 6 0 L , 4 2 1 8 1 6 0 L a re 1,048, 576 w ord s by 16 b its C M O S d y n a m ic R A M s .

IC-321B

Abstract: p421e P421E-400A
Contextual Info: DATA SHEET / MOS INTEGRATED CIRCUIT jUPD42S16160L, 4216160L, 18160L, 18160L 3.3 V OPERATION 16 M-BIT DYNAMIC RAM 1 M-WORD BY 16-BIT, FAST PAGE MODE, BYTE READ/WRITE MODE Description T h e ^ P D 4 2 S 1 6 1 6 0 L , 4216160L, 42S 18 1 6 0 L , 4 2 1 8 1 6 0 L are 1,048, 576 w ords by 16 bits C M O S dyna m ic RAMs.

Contextual Info: DATA SHEET / MOS INTEGRATED CIRCUIT //PD42S16160L, 4216160L, 18160L, 18160L 3.3 V OPERATION 16 M-BIT DYNAMIC RAM 1 M-WORD BY 16-BIT, FAST PAGE MODE, BYTE READ/WRITE MODE Description The ¿¡PD42S16160L, 4216160L, 18160L, 18160Lare 1,048, 576 words by 16 bits CMOS dynamic RAMs.

TPS 436 IRA

Abstract: IC-3218B
Contextual Info: DATA SHEET NEC MOS INTEGRATED CIRCUIT fiPD42S16160L, 4216160L, 18160L, 18160L 3.3 V OPERATION 16M-BIT DYNAMIC RAM 1M-WORD BY 16-BIT, FAST PAGE MODE, BYTE READ/WRITE MODE Description The iiPD42S16160Lr 4216160L, 18160L, 18160L are 1 048 576 words by 16 bits dynamic CMOS RAMs.

Contextual Info: HM51W16160 Series HM51W18160 Series 1048576-word x 16-bit Dynamic RAM HITACHI ADE-203-635D Z Rev. 4.0 Jun. 26, 1997 Description The Hitachi HM51W16160 Series, HM51W18160 Series are CMOS dynamic RAMs organized as 1,048,576-word 16-bit. They employ the most advanced CMOS technology for high performance and

Contextual Info: b427525 0042323 TbS » N E C E f MOS INTEGRATED C IR CU IT H / P D 4 2 S 1 6 1 6 L , 4 2 S 1 7 1 6 L , 4 2 S 1 8 1 6 L 16 M BIT D Y N A M IC RAM 3 .3 V FAST PAGE M O D E & BYTE R E A D /W R IT E M O DE -P R E L IM IN A R Y -D ESCRIPTIO N

DIN 41529

Abstract: bacc10 MIL-C-83513 connector BACC45FT BACC10GH BACC45FN S2402D PTI 30 040 ga BACC45FM cd 1191 acb
Contextual Info: Catalog No. C-865 CIN:APSE High Speed Interconnect Technology CIN:APSE ® FEATURES High-Speed Interconnect Technology • High signal speed capability enabling frequencies greater than 20 GHz. ■ Z-Axis, solderless, compression mount interconnect system.

42S18160

Abstract: NEC 4216160
Contextual Info: M O S INTEGRATED CIRCU IT juPD42S16160,4216160,42S18160,4218160 16 M BIT DYNAM IC RAM 1 M-WORD BY 16-BIT, FA ST PAGE M ODE, B YTE REA D /W RITE M ODE DESCRIPTION T h e /IPD 42S16160, 4216160, 42S1816 0, 4218160 are 1 048 576 w o rd s b y 16 bits d yn a m ic C M O S R A M s.

NEC 4216160

Contextual Info: M O S INTEGRATED CIRCUIT ju P D 4 2 S 16 1 6 0 ,4 2 1 6 1 6 0 ,4 2 S 1 8 1 6 0 ,4 2 18 16 0 16 M-BIT DYNAMIC RAM 1 M-WORD BY 16-BIT, FAST PAGE MODE, BYTE READ/WRITE MODE DESCRIPTION The fiPD42S16160, 4216160, 42S18160, 4218160 are 1 048 576 w ords by 16 bits dynam ic CM O S RAMs.

51w18160

Contextual Info: HM51W16160 Series HM51W18160 Series 1048576-word x 16-bit Dynamic Random Access Memory HITACHI ADE-203-635A Z Rev. 1.0 Sep. 30, 1996 Description The Hitachi HM51W16160 Series, HM51W18160 Series are CMOS dynamic RAMs organized as 1,048,576-word X 16-bit. They employ the most advanced CMOS technology for high performance and

Contextual Info: DATA SHEET MOS iv iv w iINTEGRATED m I •i n I u l / CIRCUIT v ii tv w I I r HPD42S16160L, 4216160L, 18160L, 18160L 3.3 V OPERATION 16M-BIT DYNAMIC RAM 1M -W 0R D BY 16-BIT, FAST PAGE MODE, BYTE READ/WRITE MODE DESCRIPTION The fiPD42S16160L, 4216160L, 18160L, 18160L are 1 048 576 w o rd s by 16 bits d ynam ic C M O S RAM s.

Contextual Info: DURA-CON Barrier Blocks High Reliability Accessories All-Plastic Solder Terminals 3/4W, Y, and W Optional Terminals for use with Cinch terminal blocks. See chart for type and dimensions. Below 2 Ordering Information "3/4 W" Terminals - Dimensions Catalog

Contextual Info: DATA SHEET NEC MOS INTEGRATED CIRCUIT /¿18160L, 18160L 3.3 V OPERATION 16 M BIT DYNAMIC RAM 1 M-WORD BY 16-BIT, FAST PAGE MODE, BYTE READ/WRITE MODE Description The ^18160L, 18160L are 1,048,576 words by 16 bits CMOS dynamic RAMs. The fast page mode

ic 321

Contextual Info: NEC / DATA SHEET MOS INTEGRATED CIRCUIT _ _ _ _ _ _ _ / „PD42S16160L, 4216160L, 18160L, 18160L 3.3 V OPERATION 16M-BIT DYNAM IC RAM 1M-W ORD BY 16-BIT, FAST PAGE MODE, BYTE READ/WRITE MODE Description The /¿PD42S16160L, 4216160L, 18160L, 18160L are 1 048 576 w o rd s by 16 bits d yn a m ic CMOS RAMs.

NEC uPD 833

Abstract: NEC 4216160
Contextual Info: NEC / DATA SHEET MOS INTEGRATED CIRCUIT _ ^uPD42S16160,4216160,42S18160,4218160 1 6 M - B IT D Y N A M IC R A M 1 M -W O R D B Y 1 6 -B IT , F A S T P A G E M O D E , B Y T E R E A D / W R IT E M O D E Description T h e ^ P D 4 2 S 1 6 1 6 0 , 4 2 1 6 1 6 0 , 4 2 S 1 8 1 6 0 , 4 2 1 8 1 6 0 a re 1 ,0 4 8 , 5 7 6 w o rd s b y 16 b its C M O S d yn a m ic R A M s. T h e

Contextual Info: DATA SHEET MOS 11 INTEGRATED n I Li I i n I b. vCIRCUIT i i i v v i I iv iv w r iiPD42S16160L, 4216160L. 18160L, 18160L 3.3 V OPERATION 16M-BIT DYNAMIC RAM 1M -W 0R D BY 16-BIT, FAST PAGE MODE, BYTE RE AD/W RITE MODE DESCRIPTION The /1PD42S16160L, 4216160L, 18160L, 18160L are 1 048 576 words by 16 bits dynamic CMOS RAMs.

M1314

Abstract: PD42S18160 4218160LE-60
Contextual Info: DATA SHEET NEC MOS INTEGRATED CIRCUIT //PD42S18160, 4218160 16 M-BIT DYNAMIC RAM 1 M-WORD BY 16-BIT, FAST PAGE MODE, BYTE READ/WRITE MODE Description The /¿PD42S18160, 4218160 are 1,048,576 words by 16 bits CMOS dynamic RAMs. The fast page mode and byte read/write mode capability realize high speed access and low power consumption.