183MHZ Search Results

MAX2338

Abstract: AN448 APP448 MAX2320 MAX2323 WCDMA TRANSCEIVER
Contextual Info: Maxim > App Notes > Wireless and RF Keywords: REP017: Dual-Band Triple-Mode IC Uses 183MHz for Both CDMA and AMPS IFs Nov 01, 2000 APPLICATION NOTE 448 REP017: Dual-Band Triple-Mode IC Uses 183MHz for Both CDMA and AMPS IFs Rapid Engineering Prototypes are real circuits that Maxim application engineers have built and measured in our labs. They

LNA SOT23-6

Abstract: MAX2690 Maxim MAX2294 MAX1674 MAX2471 MAX2608 MAX2240 MAX2251 MAX2338 MAX2389
Contextual Info: WIRELESS Data Sheets ANALOG DESIGN SOLUTIONS Applications Notes • • Free Samples NEW IC VCO MAX2338 IC TDMA GSM 183MHz • LNA • LNA • • CDMA EDGE MAX2338 LO VCO MAX2338 Maxim IC ! 1.4dB 15dB 13.5dB 7.5dB 9dB • LO • +11dBm LNA IIP3 • LO •

016Z

Contextual Info: 1 2 8 K X 3 6 ,2 5 6 K X 1 8 ,3.3V SYNCHRONOUS SRAMS WITH 3.3V I/O, PIPELINED OUTPUTS, BURSTCOUNTER, SINGLE CYCLE DESELECT D e sc rip tio n F ea tu re s * 128K x 3 6 ,256K x 18 memory configurations * Supports high system speed: - 200MHz 183MHz 166MHz 150MHz

Contextual Info: Preliminary W986432AH 512K x 4 Banks x 32 bits x SDRAM Features • • • • • • • • • • • • • 3.3V±0.3V power supply Up to 183MHz Clock frequency 524,288 words x 4 banks x 32 bits organization Auto Refresh and Self Refresh CAS latency: 2 and 3

MAX2323

Abstract: AN457 APP457 MAX2320 IS98A
Contextual Info: Maxim > App Notes > Wireless and RF Keywords: dual-band, tri-mode IS-98A/B/C-based CDMA, cellular phones, TDMA, GSM, WCDMA, IF, 183MHz IF, IP, IP performance, lownoise amplifier, LNA Nov 01, 2000 APPLICATION NOTE 457 REP018: Dual-band dual-mode front-end IC with common 183.6MHz IF

AN448

Abstract: APP448 MAX2320 MAX2323 MAX2338 digital mixer diagram and function MIXER SCHEMATIC DIAGRAM 183.6-MHz
Contextual Info: Maxim > App Notes > Wireless and RF Keywords: cellular CDMA, cellular AMPS, IF image rejection, IP, IP performance, IIP3, FM mixer, RF, RF VCO, low-noise amplifier, LNA, TDMA, GSM, EDGE, WCDMA Nov 01, 2000 APPLICATION NOTE 448 REP017: Dual-band triple-mode IC uses 183MHz for both CDMA and

PC100

Abstract: PC133 54-PIN HYM71V653201
Contextual Info: 2 . PRODUCT QUICK REFERENCE X XX XX X X XX X X - X - X X£ HYNIX MEMORY PRODUCT Q U IC K REFERENCE HY XX I : Industrial Temperature E: Extended Temperature SPEED s 200MHz 183MHz 55 6 7 PRODUCT GROUP 57 : SDRAMs PROCESS & POWER SUPPLY : CMOS, 3.3V DENSTTY& REFRESH

4MX16

Abstract: 8MX16
Contextual Info: High Speed SDRAM 166MHz ~ q Graphics, Network Interface Cards (NIC), HDDs & Set-Top Box systems require Higher memory bandwidth w/o memory interface change. q 64Mb (4Mx16) availability C/S 225MHz 200MHz 183MHz 166MHz E-die(0.17um) - Now Now Now F-die(0.15um)

AN445

Abstract: APP445 IS-136 MAX2320 MAX2323 MAX2338 mixer
Contextual Info: Maxim > App Notes > Wireless and RF Keywords: REP010: Dual-Band IS-136 FE IC at 183MHz IF May 01, 2002 APPLICATION NOTE 445 REP010: Dual-Band IS-136 FE IC at 183MHz IF Rapid Engineering Prototypes are real circuits that Maxim application engineers have built and measured in our labs. They

AN445

Abstract: APP445 IS-136 MAX2320 MAX2323 MAX2338 mixer
Contextual Info: Maxim > App Notes > Wireless and RF Keywords: dual-band, triple-mode CDMA, CDMA, cellular phones, cellular band, TDMA, GSM, WCDMA, 100Mhz IF, IP, IP performance, low-noise amplifier, LNA, IIP3 May 01, 2002 APPLICATION NOTE 445 REP010: Dual-band IS-136 FE IC at 183MHz IF

HY57V641620B

Abstract: HY57V651620B HY57V651620BLTC-55 HY57V651620BTC-10 HY57V651620BTC-10P HY57V651620BTC-10S HY57V651620BTC-55 HY57V651620BTC-6 HY57V651620BTC-7 HY57V651620BTC-75
Contextual Info: HY57V651620B 4 Banks x 1M x 16Bit Synchronous DRAM DESCRIPTION The Hynix HY57V641620B is a 67,108,864-bit CMOS Synchronous DRAM, ideally suited for the main memory applications which require large memory density and high bandwidth. HY57V641620B is organized as 4banks of 1,048,576x16.

K8D3216UBC-pi07

Abstract: K5E5658HCM KAD070J00M KBH10PD00M K5D1257ACM-D090000 samsung ddr2 ram MTBF KBB05A500A K801716UBC k5d1g13acm k5a3281ctm
Contextual Info: Product Selection Guide Memory and Storage April 2005 MEMORY AND STORAGE SECTION A DRAM DDR2 SDRAM DDR SDRAM SDRAM RDRAM NETWORK DRAM MOBILE SDRAM GRAPHICS DDR SDRAM DRAM ORDERING INFORMATION FLASH NAND, OneNAND, NOR FLASH NAND FLASH ORDERING INFORMATION SRAM

Contextual Info: SM320C6414-EP, SM320C6415-EP, SM320C6416-EP FIXED-POINT DIGITAL SIGNAL PROCESSORS www.ti.com SGUS043D – MAY 2003 – REVISED SEPTEMBER 2008 1 Introduction 1.1 Features • • • • • • • Highest-Performance Fixed-Point Digital Signal Processors DSPs

MAR105

Contextual Info: SM320C6414-EP, SM320C6415-EP, SM320C6416-EP FIXED-POINT DIGITAL SIGNAL PROCESSORS www.ti.com SGUS043D – MAY 2003 – REVISED SEPTEMBER 2008 1 Introduction 1.1 Features • • • • • • • Highest-Performance Fixed-Point Digital Signal Processors DSPs

mar105

Abstract: EMIFA OMAP
Contextual Info: SM320C6414-EP, SM320C6415-EP, SM320C6416-EP FIXED-POINT DIGITAL SIGNAL PROCESSORS www.ti.com SGUS043D – MAY 2003 – REVISED SEPTEMBER 2008 1 Introduction 1.1 Features • • • • • • • Highest-Performance Fixed-Point Digital Signal Processors DSPs

ED26 diode

Abstract: TMS320DA SPRU233 ed13 diode ED21 DIODE ed28 diode
Contextual Info: SM320C6713-EP FLOATING-POINT DIGITAL SIGNAL PROCESSORS Data Manual PRODUCTION DATA information is current as of publication date. Products conform to specifications per the terms of the Texas Instruments standard warranty. Production processing does not necessarily include testing of all parameters.

Contextual Info: 128K X 36, 256K X 18, 3.3V SYNCHRONOUS SRAMS WITH 2.5V I/O OPTION, PIPELINED OUTPUTS, BURST COUNTER, SINGLE CYCLE DESELECT D E S C R IP T IO N : FE A TU R E S : • 128K x 36,256K x 18 memory configurations • Supports high system speed: - PRELIMINARY IDT71V2576

Contextual Info: SM320C6414ĆEP, SM320C6415ĆEP, SM320C6416ĆEP FIXEDĆPOINT DIGITAL SIGNAL PROCESSORS SGUS043–MAY 2003 D Controlled Baseline D D D D D D D D D D L1/L2 Memory Architecture – One Assembly/Test Site, One Fabrication Site Extended Temperature Performance of

ps 817c

Contextual Info: TMS320C6414, TMS320C6415, TMS320C6416 FIXEDĆPOINT DIGITAL SIGNAL PROCESSORS SPRS146H – FEBRUARY 2001 – REVISED JULY 2003 D Highest-Performance Fixed-Point Digital D D D D D Signal Processors DSPs – 2-, 1.67-, 1.39-ns Instruction Cycle Time – 500-, 600-, 720-MHz Clock Rate

ipc 502

Abstract: DPSD16MX16TKY5 A801
Contextual Info: ADVANCE D COM P ON E NTS PACKAG I NG 256 Megabit Synchronous DRAM DPSD16MX16TKY5 DESCRIPTION: The Memory Stack series is a family of interchangeable memory devices. The 256 Megabit SDRAM assembly utilizes the space saving LP-Stack™ technology to increase memory density. This stack is constructed with two 128Mb 16M x 8

DPSD128MX4WNY5

Contextual Info: ADVANCE D COM P ON E NTS PACKAG I NG 512 Megabit Narrow Rail SDRAM DPSD128MX4WNY5 DESCRIPTION: The Memory Stack series is a family of interchangeable memory devices. The 512 Megabit SDRAM Narrow Rail assembly utilizes the space saving LP-Stack™ technology to increase memory density. This stack is constructed with two 256Mb

K4S161622H-UC60

Abstract: K4S161622H-UC70 uc60 K4S161622H-UC80 K4S161622H K4S161622H-UC55
Contextual Info: K4S161622H CMOS SDRAM 16Mb H-die SDRAM Specification 50 TSOP-II with Pb-Free RoHS compliant Revision 1.4 August 2004 Samsung Electronics reserves the right to change products or specification without notice. Rev 1.4 August 2004 K4S161622H CMOS SDRAM Revision History

dba1

Abstract: VG3617161DT
Contextual Info: VIS VG3617161DT 1,048,576 x 16 - Bit CMOS Synchronous Dynamic RAM Description The VG3617161DT is CMOS Synchronous Dynamic RAM organized as 524,288-word X 16-bit X 2-bank. It is fabricated with an advanced submicron CMOS technology and designed to operate from a single 3.3V

Contextual Info: K4S161622D CMOS SDRAM 1M x 16 SDRAM 512K x 16bit x 2 Banks Synchronous DRAM LVTTL Revision 1.5 September 2000 Samsung Electronics reserves the right to change products or specification without notice. Rev 1.5 Sep. '00 K4S161622D CMOS SDRAM Revision History