186 DIOD Search Results

Contextual Info: DBM-186 DBM-186 Wideband Double Balanced Microwave Mixer 10MHz to 4000MHz DBM-186 is a miniature double balanced mixer that combines microwave performance with the economy and convenience of a TO-8 package. Five unique transformers and eight matched Schottky diodes

VARI-L

Abstract: vari-l dbm 107D DBM-186 varil OQ-N-290
Contextual Info: DBM-186 T0.8 Packaged Wideband Double Balanced Microwave Mixer 10-4000 MHz DESCRIPTION DBM-186 is a miniature double balanced mixer that combines microwave performance with the economy and convenience of a T0-8 package. Five unique transformers and eight matched Schottky diodes

107D

Abstract: 204C 213B DBM-186
Contextual Info: DBM-186 TO-8 Packaged Wideband Double Balanced Microwave zsw enm fcr m tm m ts DESCRIPTION DBM-186 is a miniature double balanced mixer that combines microwave performance with the economy and convenience of a TO-8 package. Five unique transformers and eight matched Schottky diodes

107D

Abstract: 204C 213B DBM-186
Contextual Info: DBM-186 TO-8 Packaged Wideband Double Balanced Microwave m Q ID tm a dintmn fcrfjiieuoflfiijcfs DESCRIPTION DBM-186 is a miniature double balanced mixer that combines microwave performance with the economy and convenience of a TO-8 package. Five unique transformers

XC2064

Abstract: xc2064-70pc44c x5397 XC2000 XC2018 XC3020 XC4000 XC4002A xc206470pc44c x5399
Contextual Info:  XC2000 Logic Cell Array Families Table of Contents Overview . 2-186 XC2000 Logic Cell Array Families . 2-187 Architecture . 2-187

Contextual Info: PBYR2535CTF PBYR2540CTF PBYR2545CTF SCHOTTKY-BARRIER DOUBLE RECTIFIER DIODES Low-leakage platinum-barrier double rectifier diodes in SOT-186 full-pack plastic envelopes featuring low forward voltage drop, low capacitance and absence of stored charge. Their electrical

AX57

Contextual Info: PBYR735F PBYR740F PBYR745F SCHOTTKY-BARRIER RECTIFIER DIODES Low-leakage platinum-barrier rectifier diodes in SOT-186 full-pack plastic envelopes, featuring low forward voltage drop, low capacitance, and absence of stored charge. Their electrical isolation makes

Contextual Info: PBYR1035F PBYR1040F PBYR1045F SCHOTTKY-BARRIER RECTIFIER DIODES Low-leakage platinum-barrier rectifier diodes in SOT-186 full-pack plastic envelopes, featuring low forward voltage drop, low capacitance, and absence o f stored charge. Their electrical isolation makes

1545CTF

Abstract: PBYR1535CTF
Contextual Info: PBYR1535CTF PBYR1540CTF PBYR1545CTF SCHOTTKY-BARRIER DOUBLE RECTIFIER DIODES Low-leakage platinum-barrier double rectifier diodes in SOT-186 full-pack plastic envelopes featuring low forward voltage drop, low capacitance and absence o f stored charge. Their electrical

BU506DF

Contextual Info: Philips Semiconductors Product specification Silicon diffused power transistors BU506F; BU506DF DESCRIPTION High-voltage, high-speed switching NPN power transistor in a SOT 186 package. The BU506DF has an integrated efficiency diode. o APPLICATIONS • Horizontal deflection circuits of

Contextual Info: _u _ N AUER PHILIPS/DISCRETE • ObE D bbS3T31 00113bl T ■ BYV33F SERIES T-03-19 SCHOTTKY-BARRIER, ELECTRICALLY-ISOLATED DOUBLE RECTIFIER DIODES High-efficiency schottky-barrier double rectifier diodes in SOT-186 full-pack plastic envelopes,

1645f

Abstract: PBYR1635F 1640F
Contextual Info: PBYR1635F PBYR1640F PBYR1645F SCHOTTKY-BARRIER RECTIFIER DIODES Low-leakage platinum -barrier rectifier diodes in SOT-186 full-pack plastic envelopes, featuring low forward voltage drop, low capacitance, and absence o f stored charge. T heir electrical isolation makes

204OCT

Contextual Info: PBYR2035CTF PBYR2040CTF PBYR2045CTF SCHOTTKY-BARRIER DOUBLE RECTIFIER DIODES Low-leakage platinum -barrier double rectifier diodes in SOT-186 full-pack plastic envelopes featuring low forw ard voltage drop, low capacitance and absence o f stored charge. T heir electrical

BYV33F

Abstract: BYV33F-40A BYV33F-35 M0810
Contextual Info: _u_ N AMER PHILIPS/DISCRETE OLE D • 1^53131 Ü0113bl T BYV33F S E R IE S T-03-19 ' SCHOTTKY-BARRIER, ELECTRICALLY-ISOLATED DOUBLE RECTIFIER DIODES High-efficiency schottky-barrier double rectifier diodes in SOT-186 full-pack plastic envelopes,

14.3f

Contextual Info: BYV143F SERIES y v. SCHOTTKY-BARRIER, ELECTRICALLY-ISOLATED DOUBLE RECTIFIER DIODES Low-leakage platinum -barrier double rectifier diodes in SOT-186 full-pack plastic envelopes featuring low forward voltage drop, low capacitance and absence o f stored charge. Their electrical

TA317

Abstract: M3142 Ultra Fast Recovery Double Rectifier Diodes BYQ28F BYQ28F-50
Contextual Info: SbE D • 711002b □ □ m S I D DID ■ PHIN BYQ28F SERIES 1 PHILIPS INTERNATIONAL T - 0 3 - 1 7 ULTRA FAST-RECOVERY ELECTRICALLY-ISOLATED DOUBLE RECTIFIER DIODES Glass-passivated, high-efficiency epitaxial double rectifier diodes in SOT-186 full-pack plastic

Contextual Info: MA46601-186 Diodes Varactor Diode Military/High-RelN Ct{Cj} Nom. F Junction Cap.400f C1/C2 Min. Capacitance Ratio2.1 V(RRM)(V) Rep.Pk.Rev. Voltage30 Q Factor Min.7.5k f(co) Min. (Hz) Cut-off freq. P(D) Max. (W) Semiconductor MaterialGaAs Package StyleAxial-E

Contextual Info: MA46607-186 Diodes Varactor Diode Military/High-RelN Ct{Cj} Nom. F Junction Cap.1.5p C1/C2 Min. Capacitance Ratio3.8 V(RRM)(V) Rep.Pk.Rev. Voltage30 Q Factor Min.5.0k f(co) Min. (Hz) Cut-off freq. P(D) Max. (W) Semiconductor MaterialGaAs Package StyleAxial-E

Contextual Info: MA46614-186 Diodes Varactor Diode Military/High-RelN Ct{Cj} Nom. F Junction Cap.1.2p C1/C2 Min. Capacitance Ratio4.2 V(RRM)(V) Rep.Pk.Rev. Voltage45 Q Factor Min.4.3k f(co) Min. (Hz) Cut-off freq. P(D) Max. (W) Semiconductor MaterialGaAs Package StyleAxial-E

Contextual Info: MA46603-186 Diodes Varactor Diode Military/High-RelN Ct{Cj} Nom. F Junction Cap.600f C1/C2 Min. Capacitance Ratio2.8 V(RRM)(V) Rep.Pk.Rev. Voltage30 Q Factor Min.6.5k f(co) Min. (Hz) Cut-off freq. P(D) Max. (W) Semiconductor MaterialGaAs Package StyleAxial-E

BYW29F

Contextual Info: 25E D N AMER PH ILIPS/DISCRETE • ^53131 002274*1 3 ■ X ' BYW29F SERIES 7 3 0 3 - /7 ULTRA FAST RECOVERY, ELECTRICALLY-ISOLATED RECTIFIER DIODES Glass-passivated, high-efficiency epitaxial rectifier diodes in S O T -186 full-pack envelopes, featuring

sp723ab

Contextual Info: 5 Next Silicon Protection Circuits Product Number Description TVS Protection with Filter and Termination Packaging Page SPUSB1AJT Upstream USB Port Terminator with ESD Suppression & EMI Filtering R1 = 15 ohms Surface Mount SC70-6 . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 186-188

Z188

Abstract: 2U 26 diode TF 450
Contextual Info: SIEMENS 8INQLE LG Z181 LG Z182-186 LG Z188,180 2 to 6 DIODE ARRAYS 8,10 DIODE ARRAYS Green Miniature LED Lamp Package Dimensions in inches mm .094 (2.4) .083 (2.1) , .112(2.84) FEATURES * Green Diffused Lens * Miniature Size * 0.100" (2.54 mm) Lead Spacing

Contextual Info: MA46610-186 Diodes Varactor Diode Military/High-RelN Ct{Cj} Nom. F Junction Cap.500f C1/C2 Min. Capacitance Ratio2.7 V(RRM)(V) Rep.Pk.Rev. Voltage45 Q Factor Min.6.0k f(co) Min. (Hz) Cut-off freq. P(D) Max. (W) Semiconductor MaterialGaAs Package StyleAxial-E