187 TRANSISTOR PNP Search Results

Transistor AC 188

Abstract: AC 188 pnp transistor TO 1 ac188 TL 187 TRANSISTOR PNP TL 188 TRANSISTOR PNP Transistor AC 187 valvo AC 188 germanium transistor ac 188 ac187
Contextual Info: NICHT FUR N E U E N T W I C K L U N G E N AC 188 GERMANIUM - PNP - NF - TRANSISTOR für Endstufen, mit AC 187 als komplementäres Paar Mechanische Daten: Gehäuse: Metall, JEDEC TO-1, 1 A 3 DIN 41 871 Alle Elektroden sind vom Gehäuse isoliert. Farbpunkt: Kol1ektorseite

Contextual Info: 2SB1355 Transistor, PNP Features Dimensions U n its : mm • • • • available in HRT package excellent current-to-gain characteristics low collector saturation voltage, typically VCE(sat) =-0.5 V at lc/lB = -3A /-0.3A 2SB1355 (HRT) 8.0±0.2 4.5±0.2

Contextual Info: Preset Counters with Dual LED Display and Advanced Counter Functionality Model DPC-21 187 $ Shown ߜ 1/16 DIN Cutout ߜ Large Dual-Line LED Display for Easy Preset and Count Value Viewing ߜ Scale Function Allows Display in Engineering Units e.g., Length, Volume

187 TRANSISTOR PNP

Abstract: 2sa684 TRANSISTOR 187 datasheet 815 transistor
Contextual Info: MCC
  omponents 21201 Itasca Street Chatsworth    !"# $ %    !"# 2SA684 Features • • PNP EPITAXIAL Automatic insertion by radial taping possible. Complementary pair with 2SC1384 PLANAR TRANSISTOR TO-92NL

2SA1036K L T146

Contextual Info: Transistors Medium Power Transistor -32V, - 0.5A 2SA1036K/2SA1577/2SA854S •External dimensions (Units: mm) 2SA1577 2SA1036K 1 1+0.2 ; -0;1 [0.&SQ.95] 0 .8 ± 0 .1 U (ß 1.3±0.1 f 1 0.65 0 65 y fa +J i! (3)01 _ •Structure Epitaxial planar type PNP silicon transistor

power transistor vce 600 volt

Abstract: 2N2907A 2N2907AUA SFT2907A SFT2907A-4 transistor A 562
Contextual Info: SFT2907A Series Solid State Devices, Inc. 14701 Firestone Blvd * La Mirada, CA 90638 Phone: 562 404-4474 * Fax: (562) 404-1773 ssdi@ssdi-power.com * www.ssdi-power.com 600 mA 60 Volts PNP High Speed Transistor DESIGNER’S DATA SHEET Part Number / Ordering Information 1/

MICROPROCESSOR Z80

Abstract: uPD72020 uPC5102 transistor 2p4m UPD6487 2SD1557 2SJ 3305 UPD77529 TRANSISTOR SOD MARKING CODE 352A micro servo 9g tower pro
Contextual Info: The export of these products from Japan is regulated by the Japanese government. The export of some or all of these products may be prohibited without governmental license. To export or re-export some or all of these products from a country other than Japan may also be prohibited without a license from that country. Please call

TR0022B

Contextual Info: SFT2907A Series Solid State Devices, Inc. 14701 Firestone Blvd * La Mirada, CA 90638 Phone: 562 404-4474 * Fax: (562) 404-1773 ssdi@ssdi-power.com * www.ssdi-power.com 600 mA 60 Volts PNP High Speed Transistor DESIGNER’S DATA SHEET Part Number / Ordering Information 1/

BD81010

Contextual Info: ON Semiconductor NPN BD809 Plastic High Power Silicon Transistor PNP BD810 . . . designed for use in high power audio amplifiers utilizing complementary or quasi complementary circuits. • DC Current Gain — ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ

bt39

Contextual Info: M C C SOT-23 P la s tic -E n c a p s u la te T ra n s is to rs ^ M M BT3906LT1 TRANSISTOR PNP 1 .BASE 2 .EMITTER 3.COLLECTOR FEATURES Power dissipation PcM: 0.2 W (Tamb=25'C ) C ollector current ICM: -0.2 A 2.4 u_1.3 ;CoHector-base voltage ^ V(br>cbo :-40V

transistor d 188

Abstract: BD188 bd186 BD186 motorola BD190 3299 transistor
Contextual Info: M O T O R O L A SC Î X S T R S / R F> 6367254 MOTOROLA Th SC DT|b3b7ES4 96D <X ST R S/R _.F J 80565 GOflOSbS 4 D MOTOROLA E l SEMICONDUCTOR TECHNICAL DATA PLASTIC M E D IU M POWER SILICO N PNP TRANSISTOR 4 AM PERE POWER TRANSISTOR . . . designed for use in 5 to 10 Watt audio amplifiers utilizing

Contextual Info: Ordering number: EN 1392A _ 2SA1339/2SC3393 N0.1392A SA\YO PNP/ NPN Epitaxial Planar Silicon Transistors High-Speed Switching Applications Features • • • • Very small-sized package permitting sets to be small-sized, slim High breakdown voltage: Vc e o = ” 50V

IFRZ44

Abstract: IRFZ43 KA3842D irf510 switch TRANSISTOR MC7805CT KA336Z Transistor mc7812ct high voltage pnp transistor 700v IRFZ44 PNP KS82C670N
Contextual Info: PRODUCT INDEX ALPHA NUMERIC INDEX Part numbers In BOLD are preferred standard parts. PART NO. 2N3904 2N3906 2N4400 2N4401 2N4402 2N4403 2N5087 2NS088 2NS551 2N6S15 IRF510 IRF511 IRF512 IRF513 IRF520 IRF521 IRF522 IRF523 IRFS30 IRF531 IRF532 IRF533 IRF540 IRF541

2SB1516F

Contextual Info: 2SB1516F5 V ~ 7 > v 7s $ /Transistors a q q j v ' J ^ = \ > V ÿ > v 7 , $ " W w E p ita x ia l Planar PNP Silicon Transistor fê.M :â M t} W fà /\- Q v i Freq. Power Amp. W Rttj£ /Dimensions Unit : mm 1) VcE(sat) VcE(sat)^—0.3V 6.5 ±0.2 z-3rS ;t

Contextual Info: UMZ1NT1G Complementary Dual General Purpose Amplifier Transistor PNP and NPN Surface Mount http://onsemi.com Features • • • • • High Voltage and High Current: VCEO = 50 V, IC = 200 mA High hFE: hFE = 200X400 Moisture Sensitivity Level: 1 ESD Rating − Human Body Model: 3A

rjl ce

Abstract: Dual General Purpose Amplifier Transistor
Contextual Info: UMZ1NT1G Complementary Dual General Purpose Amplifier Transistor PNP and NPN Surface Mount http://onsemi.com Features • • • • • High Voltage and High Current: VCEO = 50 V, IC = 200 mA High hFE: hFE = 200X400 Moisture Sensitivity Level: 1 ESD Rating − Human Body Model: 3A

Contextual Info: UMZ1NT1G Complementary Dual General Purpose Amplifier Transistor PNP and NPN Surface Mount http://onsemi.com Features • • • • • High Voltage and High Current: VCEO = 50 V, IC = 200 mA High hFE: hFE = 200X400 Moisture Sensitivity Level: 1 ESD Rating − Human Body Model: 3A

Contextual Info: UMZ1NT1 Complementary Dual General Purpose Amplifier Transistor PNP and NPN Surface Mount http://onsemi.com Features • • • • • High Voltage and High Current: VCEO = 50 V, IC = 200 mA High hFE: hFE = 200X400 Moisture Sensitivity Level: 1 ESD Rating − Human Body Model: 3A

Contextual Info: um ZXT12P12DX u p e rS O T 4 UAL 12V PNP SILICON LOW SATURATION SWITCHING TRANSISTOR UMMARY ceo=-12V; Rsat = 47 m il; lc= -3A ESCRIPTION his new 4th generation ultra low saturation transistor utilises the Zetex atrix structure com bined with advanced assem bly techniques to give

TL 187 TRANSISTOR PNP

Abstract: BA672 TL 188 TRANSISTOR PNP TL 188 TRANSISTOR PIN DIAGRAM aafe
Contextual Info: BA6722 BA6722 h 7 > v * £ * < y K -7 < / \ V Transistor Switch Driver / Series Regulator BA6722 l i , v 'J - X U i 1CT ' t <, 2 0 0 5V U + ' z l U - S • W ^ T ^ S / D im e n s io n s (Unit : mm PNP I ! ï § T '8 t / 3 c è f t T t 'Î l'o Vcc ü(7) PNP h 7 > v X * £ f f l l ' T * ] « l ê Î l Î t o

2SD661 TRANSISTOR PNP

Abstract: riaa 2SB0745 2SB0745A 2SB745 2SB745A 2SD0661 2SD661 2SD661A
Contextual Info: Transistor 2SB0745, 2SB0745A 2SB745, 2SB745A Silicon PNP epitaxial planer type For low-frequency and low-noise amplification Complementary to 2SD0661 (2SD661) and 2SD0661A (2SD661A) Parameter Symbol Collector to 2SB0745 base voltage 2SB0745A Collector to

NSB4904DW1T1G

Abstract: NSB4904DW1T2G "two TRANSISTORs" sot-363 pnp npn
Contextual Info: NSB4904DW1T1G, NSB4904DW1T2G Dual Bias Resistor Transistors NPN and PNP Silicon Surface Mount Transistors with Monolithic Bias Resistor Network http://onsemi.com 6 The Bias Resistor Transistor BRT contains a single transistor with a monolithic bias network consisting of two resistors; a series base

419B-02

Abstract: NSB4904DW1T1G NSB4904DW1T2G RESISTOR footprint
Contextual Info: NSB4904DW1T1G, NSB4904DW1T2G Dual Bias Resistor Transistors NPN and PNP Silicon Surface Mount Transistors with Monolithic Bias Resistor Network http://onsemi.com 6 The Bias Resistor Transistor BRT contains a single transistor with a monolithic bias network consisting of two resistors; a series base

BSX29

Abstract: "pnp switch"
Contextual Info: SILICON PLANAR PNP SWITCH A N D RF A M P L IF IE R The B S X 29 is a silicon planar epitaxial PN P transistor in Jedec T O - 18 metal case. It is designed for saturated and nonsaturated switching circuits requiring up to 2 0 0 m A of collec­ tor current.