1880 MINATO Search Results

MHW1810

Abstract: MHW1810-1 MHW1810-2
Contextual Info: MOTOROLA Order this document by MHW1810/D SEMICONDUCTOR TECHNICAL DATA MHW1810-1 MHW1810-2 The RF Line PCS Band RF Power LDMOS Amplifiers • Specified 26 Volts, 1805–1880 MHz, Class AB Characteristics Output Power = 16 Watts CW Typ Power Gain = 26 dB Typ @ 10 Watts MHW1810–1

Contextual Info: MOTOROLA Order this document by MHW1810/D SEMICONDUCTOR TECHNICAL DATA The RF Line MHW1810-1 MHW1810-2 PCS Band RF Power LDMOS Amplifiers 1805ā–ā1880 MHz, 10 W RF POWER LDMOS AMPLIFIERS CASE 301AW–02, STYLE 1 MAXIMUM RATINGS Rating Symbol Value Unit

Contextual Info: JRC SAW FILTER NSVS718 Application PCS USA TX HALF BAND ( 2 IN - 2 OUT ) Electrical Specification: (Table 1) The device characteristics are measured in the circuit shown in Fig.1. Table 1. Electrical Specifications Parameter Input and Output Impedance Nominal Center Frequency(f0)

MHW1810

Abstract: MHW1810-1 MHW1810-2
Contextual Info: MOTOROLA Order this document by MHW1810/D SEMICONDUCTOR TECHNICAL DATA MHW1810-1 MHW1810-2 The RF Line PCS Band RF Power LDMOS Amplifiers 1805ā–ā1880 MHz, 10 W RF POWER LDMOS AMPLIFIERS CASE 301AW–02, STYLE 1 MAXIMUM RATINGS Rating Symbol Value Unit

zo 405 mf

Contextual Info: MOTOROLA Order this document by MRF18030A/D SEMICONDUCTOR TECHNICAL DATA The RF MOSFET Line RF Power Field Effect Transistors N–Channel Enhancement–Mode Lateral MOSFETs Designed for GSM and EDGE base station applications from frequencies up to 1.8 to 2.0 GHz. Suitable for FM, TDMA, CDMA and multicarrier amplifier

SMD Transistor z6

Abstract: MRF18060A BC847 GSM1800 GSM1805 LP2951 MRF18060 MRF18060AS 465A-04 smd 4-pin
Contextual Info: MOTOROLA Order this document by MRF18060A/D SEMICONDUCTOR TECHNICAL DATA The RF MOSFET Line MRF18060A MRF18060AS RF Power Field Effect Transistors N–Channel Enhancement–Mode Lateral MOSFETs Designed for PCN and PCS base station applications from frequencies up to

Contextual Info: MOTOROLA Order this document by MRF18030A/D SEMICONDUCTOR TECHNICAL DATA The RF MOSFET Line RF Power Field Effect Transistors N–Channel Enhancement–Mode Lateral MOSFETs Designed for GSM and EDGE base station applications with frequencies from 1.8 to 2.0 GHz. Suitable for FM, TDMA, CDMA and multicarrier amplifier

RF POWER TRANSISTOR NPN, motorola

Abstract: MRF18060 MRF18060A
Contextual Info: MOTOROLA Order this document by MRF18060A/D SEMICONDUCTOR TECHNICAL DATA The RF MOSFET Line RF Power Field Effect Transistors N–Channel Enhancement–Mode Lateral MOSFETs Designed for PCN and PCS base station applications from frequencies up to 1.8 to 2.0 GHz. Suitable for FM, TDMA, CDMA and multicarrier amplifier

IRL 724 N

Contextual Info: MOTOROLA Order this document by MRF18030A/D SEMICONDUCTOR TECHNICAL DATA The RF MOSFET Line RF Power Field Effect Transistors N–Channel Enhancement–Mode Lateral MOSFETs Designed for GSM and EDGE base station applications from frequencies up to 1.8 to 2.0 GHz. Suitable for FM, TDMA, CDMA and multicarrier amplifier

400S

Abstract: MRF18030A MRF18030AR3 MRF18030ASR3
Contextual Info: MOTOROLA Order this document by MRF18030A/D SEMICONDUCTOR TECHNICAL DATA The RF MOSFET Line RF Power Field Effect Transistors N–Channel Enhancement–Mode Lateral MOSFETs Designed for GSM and EDGE base station applications with frequencies from 1.8 to 2.0 GHz. Suitable for FM, TDMA, CDMA and multicarrier amplifier

MRF18030A

Abstract: IRL 724 N 400S MRF18030ALR3 MRF18030ALSR3
Contextual Info: MOTOROLA Freescale Semiconductor, Inc. Order this document by MRF18030A/D SEMICONDUCTOR TECHNICAL DATA The RF MOSFET Line Freescale Semiconductor, Inc. RF Power Field Effect Transistors MRF18030ALR3 N - Channel Enhancement - Mode Lateral MOSFETs MRF18030ALSR3

MRF18030A

Abstract: 2019 gain 400S MRF18030AR3 MRF18030ASR3 1003 c2 J1022
Contextual Info: MOTOROLA Order this document by MRF18030A/D SEMICONDUCTOR TECHNICAL DATA The RF MOSFET Line RF Power Field Effect Transistors N–Channel Enhancement–Mode Lateral MOSFETs Designed for GSM and EDGE base station applications with frequencies from 1.8 to 2.0 GHz. Suitable for FM, TDMA, CDMA and multicarrier amplifier

Transistor z1

Abstract: MRF18060A
Contextual Info: MOTOROLA Order this document by MRF18060A/D SEMICONDUCTOR TECHNICAL DATA MRF18060A RF Power Field Effect Transistors MRF18060AR3 N–Channel Enhancement–Mode Lateral MOSFETs MRF18060AS Designed for PCN and PCS base station applications with frequencies from

MRF18030ALSR3

Contextual Info: MOTOROLA Order this document by MRF18030A/D SEMICONDUCTOR TECHNICAL DATA The RF MOSFET Line MRF18030AR3 RF Power Field Effect Transistors MRF18030ALR3 N - Channel Enhancement - Mode Lateral MOSFETs MRF18030ASR3 Designed for GSM and EDGE base station applications with frequencies

transistor smd z3

Abstract: BC847 GSM1800 GSM1805 LP2951 MRF18060 MRF18060ALSR3 MRF18060AR3 MRF18060ASR3 SMD transistor Z2
Contextual Info: MOTOROLA Freescale Semiconductor, Inc. Order this document by MRF18060A/D SEMICONDUCTOR TECHNICAL DATA The RF MOSFET Line RF Power Field Effect Transistors Freescale Semiconductor, Inc. N - Channel Enhancement - Mode Lateral MOSFETs Designed for PCN and PCS base station applications with frequencies from

DEMO 0365 R

Abstract: SMD Transistor z6 Transistor z1 MRF18060A transistor smd z3 BC847 SOT-23 PACKAGE 0805 smd z5 transistor 927 SOT23 GSM1805 LP2951
Contextual Info: MOTOROLA Order this document by MRF18060A/D SEMICONDUCTOR TECHNICAL DATA MRF18060A RF Power Field Effect Transistors MRF18060AR3 N–Channel Enhancement–Mode Lateral MOSFETs MRF18060ALSR3 Designed for PCN and PCS base station applications with frequencies from

J5-18

Abstract: MRF18085A
Contextual Info: MOTOROLA Order this document by MRF18085A/D SEMICONDUCTOR TECHNICAL DATA MRF18085A RF Power Field Effect Transistors MRF18085AR3 N–Channel Enhancement–Mode Lateral MOSFETs MRF18085ALSR3 The RF MOSFET Line Designed for GSM and GSM EDGE base station applications with

MRF18085ALS

Abstract: MRF18085A
Contextual Info: MOTOROLA Order this document by MRF18085A/D SEMICONDUCTOR TECHNICAL DATA MRF18085A RF Power Field Effect Transistors MRF18085AR3 N–Channel Enhancement–Mode Lateral MOSFETs MRF18085ALSR3 The RF MOSFET Line Designed for GSM and GSM EDGE base station applications with

MRF18085A

Abstract: GSM1800 MRF18085ALSR3 MRF18085AR3 MRF18085ALS
Contextual Info: MOTOROLA Order this document by MRF18085A/D SEMICONDUCTOR TECHNICAL DATA MRF18085A RF Power Field Effect Transistors MRF18085AR3 N–Channel Enhancement–Mode Lateral MOSFETs MRF18085ALSR3 The RF MOSFET Line Designed for GSM and GSM EDGE base station applications with

MRF18085A

Contextual Info: MOTOROLA Order this document by MRF18085A/D SEMICONDUCTOR TECHNICAL DATA The RF MOSFET Line RF Power Field Effect Transistors N - Channel Enhancement - Mode Lateral MOSFETs MRF18085AR3 MRF18085ALSR3 Designed for GSM and GSM EDGE base station applications with

smd transistor wb1

Abstract: wb1 sot package sot-23
Contextual Info: MOTOROLA Order this document by MRF18090A/D SEMICONDUCTOR TECHNICAL DATA The RF MOSFET Line MRF18090A MRF18090AS RF Power Field Effect Transistors N–Channel Enhancement–Mode Lateral MOSFETs Designed for GSM and EDGE base station applications from frequencies up

smd wb1

Abstract: smd diode wb1 smd wb2 wb1 sot package sot-23 465B BC847 GSM1800 LP2951 MRF18090A MRF18090AS
Contextual Info: MOTOROLA Order this document by MRF18090A/D SEMICONDUCTOR TECHNICAL DATA The RF MOSFET Line MRF18090A MRF18090AS RF Power Field Effect Transistors N–Channel Enhancement–Mode Lateral MOSFETs Designed for GSM and EDGE base station applications from frequencies up

MRF18085A

Abstract: AN1955 GSM1800 MRF18085ALSR3 MRF18085AR3
Contextual Info: MOTOROLA Freescale Semiconductor, Inc. Order this document by MRF18085A/D SEMICONDUCTOR TECHNICAL DATA The RF MOSFET Line RF Power Field Effect Transistors Freescale Semiconductor, Inc. N - Channel Enhancement - Mode Lateral MOSFETs MRF18085AR3 MRF18085ALSR3

MRF18085A

Abstract: AN1032 AN1938 GSM1800 motorola application note amplifier power power rf transistor study
Contextual Info: MOTOROLA Freescale Semiconductor, Inc. SEMICONDUCTOR APPLICATION NOTE Order this document by AN1938/D AN1938 Sensitivity of High Power RF Transistors to Source and Output Loads Freescale Semiconductor, Inc. Prepared by: Béatrice Branger and Olivier Lembeye