18AUG03 Search Results

Contextual Info: FX5545G402 Vishay Industry Smallest and Low Profile 5W 1A DC/DC Boost Converter with High Output Density Power FEATURES • Fully integrated DC/DC converter • High efficiency over large load range • 2MHz switching frequency • 100% duty cycle • Power density - more than 150W/inch3

SUP40N10-30

Abstract: pd107
Contextual Info: SUP40N10-30 Vishay Siliconix New Product N-Channel 100-V D-S 175_C MOSFET PRODUCT SUMMARY V(BR)DSS (V) 100 rDS(on) (W) ID (A) 0.030 @ VGS = 10 V 40 0.034 @ VGS = 6 V 37.5 FEATURES D TrenchFETr Power MOSFETS D 175_C Junction Temperature APPLICATIONS D Automotive

mosfet 4800

Abstract: Si7880DP Si7880DP-T1 4800 mosfet
Contextual Info: Si7880DP Vishay Siliconix N-Channel 30-V D-S MOSFET FEATURES PRODUCT SUMMARY VDS (V) 30 rDS(on) (W) ID (A) 0.003 @ VGS = 10 V 29 0.00425 @ VGS = 4.5 V 25 D TrenchFETr Power MOSFET D PWM Optimized D New Low Thermal Resistance PowerPAKr Package with Low 1.07-mm Profile

Si7440DP

Abstract: Si7440DP-T1
Contextual Info: Si7440DP Vishay Siliconix N-Channel 30-V D-S Fast Switching MOSFET FEATURES PRODUCT SUMMARY VDS (V) 30 rDS(on) (W) ID (A) 0.0065 @ VGS = 10 V 21 0.008 @ VGS = 4.5 V 19 D TrenchFETr Power MOSFET D New Low Thermal Resistance PowerPAKr Package with Low 1.07-mm Profile

SUY50N03-10CP

Contextual Info: SUY50N03-10CP Vishay Siliconix N-Channel 30-V D-S , 175_C, MOSFET PWM Optimized FEATURES D TrenchFETr Power MOSFETS D PWM Optimized for High Efficiency D 100% Rg Tested PRODUCT SUMMARY rDS(on) (W) ID (A)a 0.010 @ VGS = 10 V 15 0.012 @ VGS = 4.5 V 18 V(BR)DSS (V)

SUD70N02-04P

Contextual Info: SUD70N02-04P Vishay Siliconix N-Channel 20-V D-S 175_C MOSFET FEATURES PRODUCT SUMMARY rDS(on) (W) ID (A)a 0.0037 @ VGS = 10 V 37 0.0061 @ VGS = 4.5 V 29 APPLICATIONS VDS (V) 20 Drain Connected to Tab D D Synchronous Buck Converter - Low Side D Synchronous Rectifier

Si3454DV-T1

Abstract: Si3454DV
Contextual Info: Si3454DV Vishay Siliconix N-Channel 30-V D-S MOSFET FEATURES PRODUCT SUMMARY VDS (V) 30 rDS(on) (W) ID (A) 0.065 @ VGS = 10 V 4.2 0.095 @ VGS = 4.5 V 3.4 D TrenchFETr Power MOSFET D 100% Rg Tested (1, 2, 5, 6) D TSOP-6 Top View 3 mm 1 6 2 5 3 4 (3) G 2.85 mm

71641

Abstract: SUD15N15-95
Contextual Info: SUD15N15-95 Vishay Siliconix N-Channel 150-V D-S 175_C MOSFET FEATURES PRODUCT SUMMARY VDS (V) 150 rDS(on) (W) ID (A) 0.095 @ VGS = 10 V 15 0.100 @ VGS = 6 V 15 D TrenchFETr Power MOSFETS D 175_C Junction Temperature D 100% Rg Tested APPLICATIONS D Primary Side Switch

Si4852DY

Abstract: Si4852DY-T1
Contextual Info: Si4852DY Vishay Siliconix N-Channel 30-V D-S MOSFET with Schottky Diode PRODUCT SUMMARY VDS (V) 30 rDS(on) (W) ID (A) 0.0120 @ VGS = 10 V 11 0.0175 @ VGS = 4.5 V 9.5 FEATURES D LITTLE FOOTr Plus D 100% Rg Tested SCHOTTKY PRODUCT SUMMARY VDS (V) VSD (v) Diode Forward Voltage

Si3420DV

Abstract: Si3420DV-T1 si3420
Contextual Info: Si3420DV Vishay Siliconix N-Channel 200-V D-S MOSFET FEATURES PRODUCT SUMMARY VDS (V) rDS(on) (W) ID (A) 200 3.7 @ VGS = 10 V 0.5 D 100% Rg Tested TSOP-6 Top View 3 mm 1 6 2 5 (1, 2, 5, 6) D (3) G 3 4 2.85 mm (4) S Ordering Information: Si3420DV-T1 N-Channel MOSFET

Si4390DY

Abstract: Si4390DY-T1
Contextual Info: Si4390DY Vishay Siliconix N-Channel Qg, Fast Switching WFETr FEATURES D Extremely Low Qgd WFET Technology for Switching Losses D TrenchFETr Power MOSFET D 100% Rg Tested PRODUCT SUMMARY VDS V 30 rDS(on) (W) ID (A) 0.0095 @ VGS = 10 V 12.5 0.0135 @ VGS = 4.5 V

Contextual Info: FX5545G106 Vishay Industry Smallest and Low Profile 10W 2A DC/DC Boost Converter with High Output Density Power FEATURES • Fully integrated DC/DC converter • High efficiency over large load range • 100% duty cycle • Power density - more than 380W/inch3

SUD50N03-06P

Contextual Info: SUD50N03-06P Vishay Siliconix N-Channel 30-V D-S 175_C MOSFET FEATURES PRODUCT SUMMARY rDS(on) (W) ID (A)b 0.0065 @ VGS = 10 V 84b 0.0095 @ VGS = 4.5 V 59b APPLICATIONS VDS (V) 30 TrenchFETr Power MOSFET 175_C Junction Temperature Optimized for Low-Side Synchronous Rectifier Operation

Si7842DP

Contextual Info: Si7842DP Vishay Siliconix Dual N-Channel 30-V D-S MOSFET with Schottky Diode PRODUCT SUMMARY VDS (V) 30 FEATURES rDS(on) (W) ID (A) 0.022 @ VGS = 10 V 10 0.030 @ VGS = 4.5 V 8.5 D LITTLE FOOT Plust Schottky D New Low Thermal Resistance PowerPAKr Package with Low 1.07-mm Profile

Si7390DP

Abstract: Si7390DP-T1
Contextual Info: Si7390DP New Product Vishay Siliconix N-Channel 30-V D-S Fast Switching WFETt FEATURES D Extremely Low Qgd WFET Technology for Low Switching Losses D TrenchFETr Power MOSFET D New Low Thermal Resistance PowerPAKr Package with Low 1.07-mm Profile D 100% Rg Tested

Si2318DS

Abstract: Si2318DS-T1 C8 MARKING
Contextual Info: Si2318DS Vishay Siliconix New Product N-Channel 40-V D-S MOSFET FEATURES PRODUCT SUMMARY VDS (V) 40 D TrenchFETr Power MOSFET rDS(on) (W) ID (A) 0.045 @ VGS = 10 V 3.9 0.058 @ VGS = 4.5 V 3.5 APPLICATIONS D Stepper Motors D Load Switch TO-236 (SOT-23) G

Si7540DP

Contextual Info: Si7540DP Vishay Siliconix N- and P-Channel 12-V D-S MOSFET FEATURES PRODUCT SUMMARY VDS (V) N-Channel 12 P Channel P-Channel - 12 rDS(on) (W) ID (A) 0.017 @ VGS = 4.5 V 11.8 0.025 @ VGS = 2.5 V 9.8 0.032 @ VGS = - 4.5 V - 8.9 0.053 @ VGS = - 2.5 V - 6.9

SUD50N03-11

Contextual Info: SUD50N03-11 Vishay Siliconix N-Channel 30-V D-S 175_C MOSFET PRODUCT SUMMARY VDS (V) FEATURES rDS(on) (W) 30 ID D TrenchFETr Power MOSFET D 175_C Maximum Junction Temperature D 100% Rg Tested (A)a 0.011 @ VGS = 10 V 50 0.017 @ VGS = 4.5 V 43 D TO-252 Drain Connected to Tab

Si7844DP

Abstract: Si7844DP-T1
Contextual Info: Si7844DP Vishay Siliconix Dual N-Channel 30-V D-S MOSFET FEATURES PRODUCT SUMMARY VDS (V) 30 D TrenchFETr Power MOSFET D 100% Rg Tested ID (A) rDS(on) (W) 0.022 @ VGS = 10 V 10 0.030 @ VGS = 4.5 V 8.5 PowerPAKr SO-8 D1 S1 6.15 mm D1 D2 D2 5.15 mm 1 G1 2

Si7846DP

Abstract: Si7846DP-T1
Contextual Info: Si7846DP Vishay Siliconix N-Channel 150-V D-S MOSFET FEATURES D TrenchFETr Power MOSFETS D New Low Thermal Resistance PowerPAKr Package with Low 1.07-mm Profile D PWM Optimized for Fast Switching D 100% Rg Tested PRODUCT SUMMARY VDS (V) rDS(on) (W) ID (A)

SUD50N02-06

Contextual Info: SUD50N02-06 Vishay Siliconix N-Channel 20-V D-S , 175_C MOSFET FEATURES PRODUCT SUMMARY rDS(on) (W) ID (A)a, b 0.006 @ VGS = 4.5 V 30 0.009 @ VGS = 2.5 V 25 VDS (V) 20 D TrenchFETr Power MOSFET D 175_C Maximum Junction Temperature D 100% Rg Tested D TO-252

Contextual Info: DG2032 Vishay Siliconix New Product High-Bandwidth, Low Voltage, Dual SPDT Analog Switch FEATURES BENEFITS D Single Supply 1.8 V to 5.5 V D Low On-Resistance - rON: 2.4 W D Crosstalk and Off Isolation: -81 dB @ 1 MHz D QFN-12 (3 x 3 mm) Package D D D D D

BTA 16 6008

Abstract: bta 06 400 v BTA 06 600 T application note BTA 600 Si4824DY Si4824DY-T1
Contextual Info: Si4824DY Vishay Siliconix Asymmetric N-Channel, Reduced Qg, Fast Switching MOSFET FEATURES PRODUCT SUMMARY VDS V N Channel 1 N-Channel 30 N Channel 2 N-Channel rDS(on) (W) ID (A) 0.040 @ VGS = 10 V 4.7 0.065 @ VGS = 4.5 V 3.7 0.0175 @ VGS = 10 V 9 0.027 @ VGS = 4.5 V

trans* 72151

Contextual Info: Si4392DY Vishay Siliconix N-Channel Reduced Qg, Fast Switching WFETt FEATURES D Extremely Low Qgd WFET Technology for Switching Losses D TrenchFETr Power MOSFET D 100% Rg Tested PRODUCT SUMMARY VDS V 30 rDS(on) (W) ID (A) 0.0115 @ VGS = 10 V 12.5 0.0165 @ VGS = 4.5 V