18KV DIODE Search Results
18KV DIODE Result Highlights (5)
Part | ECAD Model | Manufacturer | Description | Download | Buy |
---|---|---|---|---|---|
CUZ30V |
![]() |
Zener Diode, 30 V, USC |
![]() |
||
CUZ24V |
![]() |
Zener Diode, 24 V, USC |
![]() |
||
CUZ36V |
![]() |
Zener Diode, 36 V, USC |
![]() |
||
CUZ20V |
![]() |
Zener Diode, 20 V, USC |
![]() |
||
CUZ12V |
![]() |
Zener Diode, 12 V, USC |
![]() |
18KV DIODE Datasheets Context Search
Catalog Datasheet | Type | Document Tags | |
---|---|---|---|
Contextual Info: PCB Mount / Super High Breakdown HA702 18KV Series PRODUCT DESCRIPTIONS The ultra breakdown relay, HA702 18KV series, is added to Sanyu high breakdown products line. This HA702 series achieves the highest spec among this product family, 18KV breakdown voltage between contacts max |
Original |
HA702 1060hpa 2000Hz HA702-118 AWG22 | |
marking 4AContextual Info: DA473S6 Ordering number : ENA1377 SANYO Semiconductors DATA SHEET DA473S6 Silicon Diffused Junction Type Diode ESD Protection Diode Features • • • Contact discharge 18kV guarantee IEC61000-4-2 . 6-pin package containing 4 devices. Halogen free compliance. |
Original |
DA473S6 ENA1377 IEC61000-4-2) 150pF, A1377-4/4 marking 4A | |
Contextual Info: RClamp3331Y Ultra Small RailClamp 1-Line, 3.3V ESD Protection PROTECTION PRODUCTS - RailClamp® Description Features High ESD withstand Voltage: +/-18kV Contact/Air RailClamp TVS diodes are ultra low capacitance devices designed to protect sensitive electronics from damage |
Original |
RClamp3331Y /-18kV 3331Y RClamp3331Y | |
Contextual Info: HVGT ESJA53-18A 5mA 18kV HIGH VOLTAGE SILICON RECTIFIER DIODES Outline Drawings : mm ESJA53-18A is high reliability resin molded type high voltage diode in small size package which is sealed a multilayed mesa type silicon chip by epoxy resin. Cathode Mark |
Original |
ESJA53-18A ESJA53-18A DO-312 | |
diode 18kvContextual Info: ESJA83 i 6kV, 18kV, 20kV : Outline Drawings HIGH VOLTAGE SILICON DIODE E S JA 8 3 is high reliability resin molded type high voltage diode in small size package which is sealed a multilayed mesa type silicon chip by epoxy resin. •4#-^ : Features • Supersmall size |
OCR Scan |
ESJA83 ESJA83-16 ESJA83-18 ESJA83-20 I95t/R89) diode 18kv | |
ESJA53Contextual Info: HVCA ESJA53-18A 5mA 18kV HIGH VOLTAGE SILICON RECTIFIER DIODES Outline Drawings : mm ESJA53-18A is high reliability resin molded type high voltage diode in small size package which is sealed a multilayed mesa type silicon chip by epoxy resin. Cathode Mark |
Original |
ESJA53-18A ESJA53-18A ESJA53 | |
Contextual Info: HVGT 2CL76 5mA 18kV HIGH VOLTAGE DIODES Outline Drawings : mm 2CL76 is high reliability resin molded type high voltage diode in small size package which is sealed a multilayed mesa type silicon chip by epoxy resin. Cathode Mark Lot No. o 3.0 o 0.6 Features |
Original |
2CL76 2CL76 DO-312 | |
Contextual Info: HVCA 2CL76 5mA 18kV HIGH VOLTAGE DIODES Outline Drawings : mm 2CL76 is high reliability resin molded type high voltage diode in small size package which is sealed a multilayed mesa type silicon chip by epoxy resin. Cathode Mark Lot No. o 3.0 o 0.6 Features |
Original |
2CL76 2CL76 | |
18KV
Abstract: SDA345
|
Original |
SDA345 250mA 125KHz 100OC. RA0072A SDA345 18KV | |
Contextual Info: SDA345 Solid State Devices, Inc. 14701 Firestone Blvd * La Mirada, Ca 90638 Phone: 562 404-4474 * Fax: (562) 404-1773 ssdi@ssdi-power.com * www.ssdi-power.com ULTRA FAST RECOVERY HIGH VOLTAGE ASSEMBLY Up To 18KV @ 250mA Designer’s Data Sheet 125KHz Operating Frequency |
Original |
SDA345 250mA 125KHz 100OC. RA0072A SDA345 | |
Contextual Info: DT1140-04LP ADVANCE INFORMATIO 4 CHANNEL LOW CAPACITANCE TVS DIODE ARRAY Features Mechanical Data • Clamping Voltage:9V at 10A 100ns TLP; 9V at 6A 8 s/20μs IEC 61000-4-2 ESD : Air – +20/-18kV, Contact – +20/-16kV IEC 61000-4-5 (Lightning): ±6A (8/20µs) |
Original |
DT1140-04LP 100ns 20/-18kV, 20/-16kV J-STD-020 MIL-STD-202, DS36293 | |
DIODE 914
Abstract: ESJA53-18A GDD4775
|
OCR Scan |
ESJA53-18A sha11 DQ04773 22367TE 0D0M774 GDD4775 ESJA53-COA 0D0477b DIODE 914 | |
SOD523-2L
Abstract: IEC6100-4-5 IEC6100-4-4 SOT143-4L 20KV DIODE SOT23-6L SOD323-2L SOT23-3L 8kv DIODE sot23 1V
|
Original |
8/20ns) HSLP01B04AA OT23-6L HSLP01B02CA OT143-4L HSLP01B02AA OT23-5L HSLP04B12HA TSSOP38 HSLP04B04GA SOD523-2L IEC6100-4-5 IEC6100-4-4 SOT143-4L 20KV DIODE SOT23-6L SOD323-2L SOT23-3L 8kv DIODE sot23 1V | |
Contextual Info: 1. SCOPE This specification provide the ratings and the requirements for high voltage silicon diode ESJA53-18A made by FUJI ELECTRIC CO.,LTD. 2. OUT VIEW Shape and dimensions are described in Fig.3. 3. IDENTIFICATION The diode sha11 be marked with Cathode Mark and Lot No. |
OCR Scan |
ESJA53-18A sha11 ESJA53-f | |
|
|||
Contextual Info: AOZ8010 8-Line EMI Filter with Integrated ESD Protection General Description Features The AOZ8010 is an 8-line device integrating EMI filtering with ESD protection for each line. It is designed to suppress unwanted EMI/RFI signals and provide electrostatic discharge ESD protection in portable electronic |
Original |
AOZ8010 AOZ8010 | |
AOS date code System
Abstract: AOZ8013 AOZ8013DIL 2x2 dfn
|
Original |
AOZ8013 AOZ8013 AOS date code System AOZ8013DIL 2x2 dfn | |
Contextual Info: AOZ8013 4-Line EMI Filter with Integrated ESD Protection General Description Features The AOZ8013 is an 4-line device integrating EMI filtering with ESD protection for each line. It is designed to suppress unwanted EMI/RFI signals and provide electrostatic discharge ESD protection in portable electronic |
Original |
AOZ8013 AOZ8013 | |
ESJA53-18
Abstract: ESJA53-18A 18KV
|
OCR Scan |
ESJA53-18 H04-004-07 esja53-dda ESJA53-18A 18KV | |
FUJI ELECTRIC DIODE
Abstract: 18kv diode
|
OCR Scan |
H04-004-07 ESJA53-18A H04-004-03 ESJA53-TT1A FUJI ELECTRIC DIODE 18kv diode | |
Contextual Info: High Voltage Stacks 688-10 to 688-25 & 688-1 OR to 688-25R I A B C D E D T I r? t "! : —I r V. Millimeter 1.140 MAX. 2.985-3.015 2.110-2.140 .7 4 0 - 770 .7 2 0 -7 5 0 28.96 MAX. 75.82-76.58 53.59-54.36 18.80-19.56 18.29-19.05 Add suffix R to denote Fast Recovery |
OCR Scan |
688-25R 500nS; 25kVrage | |
20KV DIODE
Abstract: high voltage diodes 24kv 18kv diode 20kv 18KV diode 18kv
|
Original |
CJV04, CJV05, CJV06, CJV04H 300ft/min) CJV05H CJV06H 20KV DIODE high voltage diodes 24kv 18kv diode 20kv 18KV diode 18kv | |
688-10R
Abstract: 688-12R 688-15R 688-18R 688-20R 688-25R 12KV
|
OCR Scan |
688-10R 688-25R 500nS; 688-12R 688-15R 688-18R 688-20R 688-25R 12KV | |
ALPHA YEAR DATE CODE
Abstract: AOS date code System tdfn16 alpha date code System
|
Original |
AOZ8510 AOZ8510 ALPHA YEAR DATE CODE AOS date code System tdfn16 alpha date code System | |
Contextual Info: High Voltage Stacks 688-10 to 688-25 & 688-1 OR to 688-25R I A B C D E D m_ _ T i— !r I ¡T : —I M illim eter 1.140 MAX. 2.985-3.015 2.110-2.140 .740-.770 .720-.750 28.96 MAX. 75.82-76.58 53.59-54.36 18.80-19.56 18.29-19.05 Add suffix R to denote Fast Recovery |
OCR Scan |
688-25R 500nS; |