1940 273 Search Results

NEC k 2134 transistor

Abstract: X1025 mini-lvds mini-lvds source driver R222 423 023 diode v6 33 ic 1373 nec 1178 NEC m 2134 transistor transistor NEC D 587
Contextual Info: DATA SHEET MOS INTEGRATED CIRCUIT µPD160010 384-/360-OUTPUT TFT-LCD SOURCE DRIVER COMPATIBLE WITH 256 GRAY SCALES, mini-LVDS INTERFACE SUPPORTED DESCRIPTION The µ PD160010 is a source driver for TFT-LCDS that supports the display of 256 gray scales and employs mini-LVDS

NEC k 2134 transistor

Abstract: mini-lvds source driver 804 ch mini-lvds source driver v19 423 diode v6 33 mini-lvds SS1A diode V105 transistor NEC D 587 mini-lvds driver
Contextual Info: DATA SHEET MOS INTEGRATED CIRCUIT µPD160010 384-/360-OUTPUT TFT-LCD SOURCE DRIVER COMPATIBLE WITH 256 GRAY SCALES, mini-LVDS INTERFACE SUPPORTED DESCRIPTION The µ PD160010 is a source driver for TFT-LCDS that supports the display of 256 gray scales and employs mini-LVDS

v69 648

Abstract: v106 S204 1940 273 S204-S181 15.4" wsxga NEC V17 14V181 X1525
Contextual Info: データ・シート MOS 集積回路 MOS Integrated Circuit µ PD160010 384/360 出力 TFT-LCD 用ソース・ドライバ（256 階調，mini-LVDS インタフェース対応） µ PD160010 は，mini-LVDS インタフェースを採用した 256 階調表示対応の TFT-LCD 用ソース・ドライバです。内

NEC k 2134 transistor

Abstract: dh 1117 ic 1373 S204 CM 1621 S1 PD1600 r190
Contextual Info: DATA SHEET MOS INTEGRATED CIRCUIT µPD160010 384-/360-OUTPUT TFT-LCD SOURCE DRIVER COMPATIBLE WITH 256 GRAY SCALES, mini-LVDS INTERFACE SUPPORTED DESCRIPTION The µ PD160010 is a source driver for TFT-LCDS that supports the display of 256 gray scales and employs mini-LVDS

x 13 v

Abstract: BH 1117 F SUMITOMO 1085 S204 804 ch mini-lvds source driver mini-LVDS and TFT-LCD Timing Controller R40 AH mini-lvds receiver
Contextual Info: To our customers, Old Company Name in Catalogs and Other Documents On April 1st, 2010, NEC Electronics Corporation merged with Renesas Technology Corporation, and Renesas Electronics Corporation took over all the business of both companies. Therefore, although the old company name remains in this document, it is a valid

V22-3

Abstract: S204 V53 1303 X-1331 14V181 r201, r202, r203, r204, r205, r206, r207
Contextual Info: お客様各位 カタログ等資料中の旧社名の扱いについて 2010 年 4 月 1 日を以って NEC エレクトロニクス株式会社及び株式会社ルネサステクノロジ が合併し両社の全ての事業が当社に承継されております。従いまして、本資料中には旧社

marking 4p sot23

Abstract: smd marking 271 Sot smd transistor marking n5
Contextual Info: Infineon tech n o Io g i e s Silicon Temperature Sensors KT 100 KT 110 KT 130 KT 210 KT 230 KTY 1 6-6 KTY 10-x KTY 11-x KTY 13-x KTY 21-X KTY 23-x KTY 19-6 Features • • • • • • • • Temperature dependent resistor with positive temperature coefficient

fan 7320

Abstract: WDR2400 7400 fan-in 3570 1210 123 hl 4020 1210 1420 1680 2040 7220
Contextual Info: • 0.8µ m Clock Skew Management ■ ––––––––––––––––––––––––––––––––––––––––––––––––––––––––––––––– INTRODUCTION This application note explains the need for clock skew management and how to apply OKI's clock skew management

SCR 2140

Contextual Info: POUJEREX INC T IP D • 7EiMbEl"T0ClTôTs" 1 T¿?3 -J3 Rectifier Assemblies-ÂîrCooled Assembly Module Type Device Max. Voltage Avail. V T Ambient -=40°C N.C. PDA6R620_ 30 1200 394 _30 _ 30 PDA6R620_40 2000 358 294 420 380 43 4 432 392 _40

motorola 5331

Abstract: motorola 5332 MRF19085
Contextual Info: MOTOROLA SEMICONDUCTOR TECHNICAL DATA The RF MOSFET Line RF Power Field Effect Transistors MRF19085 MRF19085R3 MRF19085SR3 MRF19085LSR3 N–Channel Enhancement–Mode Lateral MOSFETs Designed for PCN and PCS base station applications with frequencies from

MRF19085

Contextual Info: MOTOROLA SEMICONDUCTOR TECHNICAL DATA The RF MOSFET Line RF Power Field Effect Transistors MRF19085 MRF19085S N–Channel Enhancement–Mode Lateral MOSFETs Designed for PCN and PCS base station applications from frequencies up to 1. 9 t o 2. 0 G Hz . S u i ta b l e fo r T D MA , C D M A and mul ti c arri er ampl i fi er

MRF19085S

Abstract: MRF19085
Contextual Info: MOTOROLA SEMICONDUCTOR TECHNICAL DATA MRF19085 MRF19085R3 MRF19085S MRF19085SR3 MRF19085LS MRF19085LSR3 The RF MOSFET Line RF Power Field Effect Transistors N–Channel Enhancement–Mode Lateral MOSFETs Designed for PCN and PCS base station applications with frequencies from

MRF19085

Contextual Info: Freescale Semiconductor Technical Data Rev. 7, 1/2005 RF Power Field Effect Transistors N - Channel Enhancement - Mode Lateral MOSFETs MRF19085LR3 MRF19085LSR3 Designed for PCN and PCS base station applications with frequencies from 1900 to 2000 MHz. Suitable for TDMA, CDMA and multicarrier amplifier

Contextual Info: — — — POSIT ONNEMENTS POSSIBLES DE L ISOLANT ET TAILLE DES CONTACTS INSERT ALTERNATE CLOCKING POSITIONS AND CONTACT INFORMATION MOGLICHE WINKELSTELLUNGEN UND KONTAKTGROSSEN — BROCHAGE — INSERT. ARR: NO, — KONTAKTANORDNUNG — POSITIONNEMENT EN DEGR£S

CTS Series 750 Resistor Network

Abstract: CTS RESISTOR NETWORK 130Q "resistor network" cts
Contextual Info: Sin gle -ln -L in e Confo 2.48 Max 0.098 •"A" Dim.- PART N U M BER • CT S DATE V Thick film resistor network single-in-line package V7— o • High-temperature solder, • Tapered packaging available • Low profile • LOW COSt 2.54 0.25 0.010 <r¡ ±0.3

MRF19085

Abstract: 100B100JCA500X CDR33BX104AKWS GX-0300-55-22 MRF19085S
Contextual Info: MOTOROLA Order this document by MRF19085/D SEMICONDUCTOR TECHNICAL DATA The RF MOSFET Line RF Power Field Effect Transistors MRF19085 MRF19085S N–Channel Enhancement–Mode Lateral MOSFETs Designed for PCN and PCS base station applications from frequencies up to

LME0515

Contextual Info: LME SERIES Isolated 250mW Single Output features High Efficiency for Low Power Applications Pin Compatible with NME & NML 1kVDC Isolation SIP & DIP Package Styles Single Output Rail Power Density 0.36W/cm3 2 - LME SERIES 3.3V, 5V and 12V Input 3.3V, 5V, 9V, 12V and 15V Output

MRF19085

Abstract: CDR33BX104AKWS GX-0300-55-22 MRF19085LSR3 MRF19085R3 MRF19085SR3 100B5R1
Contextual Info: MOTOROLA Order this document by MRF19085/D SEMICONDUCTOR TECHNICAL DATA The RF MOSFET Line RF Power Field Effect Transistors MRF19085 MRF19085R3 MRF19085SR3 MRF19085LSR3 N–Channel Enhancement–Mode Lateral MOSFETs Designed for PCN and PCS base station applications with frequencies from

Contextual Info: LME SERIES Isolated 250mW Single Output features High Efficiency for Low Power Applications Pin Compatible with NME & NML 1kVDC Isolation SIP & DIP Package Styles Single Output Rail Power Density 0.36W/cm3 2 - LME SERIES 3.3V, 5V and 12V Input 3.3V, 5V, 9V, 12V and 15V Output

MRF19085

Contextual Info: MOTOROLA Order this document by MRF19085/D SEMICONDUCTOR TECHNICAL DATA The RF MOSFET Line RF Power Field Effect Transistors MRF19085 MRF19085R3 MRF19085SR3 MRF19085LSR3 N–Channel Enhancement–Mode Lateral MOSFETs Designed for PCN and PCS base station applications with frequencies from

MRF19085

Contextual Info: MOTOROLA Order this document by MRF19085/D SEMICONDUCTOR TECHNICAL DATA MRF19085 MRF19085R3 MRF19085S MRF19085SR3 MRF19085LS MRF19085LSR3 The RF MOSFET Line RF Power Field Effect Transistors N–Channel Enhancement–Mode Lateral MOSFETs Designed for PCN and PCS base station applications with frequencies from

GX-0300-55-22

Abstract: MRF19085 CRCW12062200FKEA T491D226K035AT rf power amplifier 850 MHZ AN1955 CRCW120610R0FKEA MRF19085LSR3 7525p
Contextual Info: Freescale Semiconductor Technical Data RF Power Field Effect Transistor N - Channel Enhancement - Mode Lateral MOSFET MRF19085LSR3 LIFETIME BUY Designed for PCN and PCS base station applications with frequencies from 1900 to 2000 MHz. Suitable for TDMA, CDMA and multicarrier amplifier

MRF19085

Contextual Info: MOTOROLA Order this document by MRF19085/D SEMICONDUCTOR TECHNICAL DATA The RF MOSFET Line MRF19085R3 MRF19085LR3 MRF19085SR3 MRF19085LSR3 RF Power Field Effect Transistors N - Channel Enhancement - Mode Lateral MOSFETs Designed for PCN and PCS base station applications with frequencies from

LME0515

Contextual Info: LME SERIES Isolated 250mW Single Output features p High Efficiency for Low Power Applications p Pin Compatible with NME & NML p 1kVDC Isolation p Single Output Rail p Power Density 0.36W/cm3 p 3.3V, 5V and 12V Input p 3.3V, 5V, 9V, 12V and 15V Output p Footprint from 0.69cm2