195MA Search Results

Contextual Info: = = =•=• = IBM0118180 IBM0118180B A d va n c e 1 M x 18 D RAM Features • 1,048,576 word by 18 bit organization • Single 3.3V ± 0.3V or 5.0V ± 0.5V power supply • 1024 refresh cycles/16ms • Low Power Dissipation - Active max - 240mA/220mA/195mA/175mA

KM68B4002J-12

Abstract: KM68B4002J-15
Contextual Info: KM68B4002 CMOS SRAM 512 K x 8Bit High-Speed BiCMOS Static RAM FEATURES GENERAL DESCRIPTION • Fast Access Time 12,13,15 ns Max. • Low Power Dissipation Standby (TTL) : 60 mA(Max) (CMOS): 30 mA(Max.) Operating KM68B4002J-12:195mA(Max.) KM68B4002J-13:195 mA(Max.)

Contextual Info: PRELIMINARY BiCMOS SRAM KM68B4002 524,288 WORD x 8 Bit High-Speed BiCMOS Static RAM FEATURES GENERAL DESCRIPTION • Fast Access Time : 10ns, 12ns, 15ns • Low Power Dissipation Standby TTL : 60mA (CMOS) : 30mA Operating KM68B4002J-10 : 200mA(Max.) KM68B4002J-12 : 195mA(Max.)

Contextual Info: Spec Sheet INDUCTORS Wire-wound Chip Inductors LB series LB2518T6R8M Features Item Summary 6.8 H(±20%), 195mA, 1007 Lifecycle Stage Mass Production Standard packaging quantity (minimum) Taping 2000pcs Products characteristics table External Dimensions

Contextual Info: 2 . Schematic: 1. Mechanical Dimensions: O- B 2 .0 ±0.2 o- 3. Electrical Specifications: OCL: 1 .D0uH±1 0% @7.96MHz, 0.1V D 1.40±0.1 DC Res.: 0.65 Ohms Max DC Current: 1.5 195mAdc Max Q: 20 REF @ 7.96MHz r SRF: r 115MHz Min 1. Solderab'lityi Leads shall m eet MIL—STD—202G,

Contextual Info: KM68B4002 CMOS SRAM 512K x8B it High-Speed BiCMOS Static RAM FEATURES GENERAL DESCRIPTION •Fast Access Time 12,13,15 ns Max. • Low Power Dissipation Standby (TTL) : 60 mA(Max.) (CMOS): 30mA(Max.) Operating KM68B4002J-12:195mA(Max.) KM68B4002J-13:195 mA(Max.)

Contextual Info: PRELIMINARY BiCMOS SRAM KM68B257 3 2 K X 8 Bit BiCMOS Static RAM FEATURES GENERAL DESCRIPTION • Ultra-Fast Access Time —Commercial: 10ns, 12ns, 15ns —6ns Output Enable time • Low Power Dissipation —Standby: 20mA —Operating: 195mA, 175mA, 150mA

Contextual Info: Spec Sheet INDUCTORS Wire-wound Chip Inductors for Signal Lines LB series M type / LE series M type LEM2520T2R7J Features Item Summary 2.7 H(±5%), 195mA, 1008 Lifecycle Stage Phaseout Standard packaging quantity (minimum) Taping 2000pcs Products characteristics table

Contextual Info: KM68B4002 BiCMOS SRAM 512K x 8 Bit High-Speed CMOS Static RAM FEATURES GENERAL DESCRIPTION • Fast Access Time 12,13,15ns{Max. • Low Power Dissipation Standby TTL) : 60mA(Max.) (CMOS) :30mA(Max.) Operating KM68B4002 - 1 2 : 195mA(Max.) KM68B4002 - 1 3 : 195mA(Max.)

SRAM 10ns

Abstract: KM68B4002J-10 KM68B4002J-12 KM68B4002J-15 a1T35
Contextual Info: PRELIMINARY BiCMOS SRAM KM68B4002 524,288 WORD x 8 Bit High-Speed BiCMOS Static RAM FEATURES • Fast Access Time : 10ns, 12ns, 15ns • Low Power Dissipation Standby TTL : 60mA (CMOS) : 30mA Operating KM68B4002J-10 :200mA(Max.) KM68B4002J-12 : 195mA(Max.)

Contextual Info: PRELIMINARY KM69B257 BiCMOS SRAM 32 K X 9 Bit BiCMOS Static RAM FEATURES GENERAL DESCRIPTION • Ultra-Fast Access Timas —Commercial: 10ns, 12ns, 15ns, 20ns —5ns & 6ns Output Enable times • Low Power Dissipation —Standby: 20mA —Operating: 195mA, 175mA, 155mA, 130mA

Contextual Info:  UTRON UT61L6416 64K X 16 BIT HIGH SPEED CMOS SRAM Preliminary Rev. 0.5 FEATURES GENERAL DESCRIPTION Fast access time : 8ns max for Vcc=3.15V~3.6V 10/12/15ns(max) for Vcc=3.0V~3.6V Low power consumption Operating : 195mA (MAX.) Standby : 30 mA(MAX.) Single 3.0V~3.6V power supply

ae5t

Abstract: j4213
Contextual Info: KM6161002B, KM6161002BI CMOS SRAM 64K x 16 Bit High-Speed CMOS Static RAM FEATURES GENERAL DESCRIPTION • Fast Access Time 8,10,12ns Max. • Low Power Dissipation Standby (TTL) : 50mA(Max.) (CMOS) : 10mA(Max.) Operating KM6161002B- 8 : 200mA(Max.) KM6161002B -1 0 : 195mA(Max.)

Contextual Info: PRELIMINARY BiCMOS SRAM KM68B4002 524,288 WORD x 8 Bit High-Speed BiCMOS Static RAM FEATURES GENERAL DESCRIPTION • Fast Access Time : 10ns, 12ns, 15ns • Low Power Dissipation Standby TTL : 60mA (CMOS) : 30mA Operating KM68B4002J-10 : 200mA(Max.) KM68B4002J-12 : 195mA(Max.)

65SS2

Abstract: ISC1210 ISC-1210 vishay 40ss
Contextual Info: MODEL IS C 1210 S hielded Inductors Molded Case % el Inductance .01nH .012jiH .015 iH .018fiH ,022hH .027|iH ,033fiH .039nH ,047(iH ,056nH ,068|iH ,082nH .1(iH ,12|iH .15 h H .22jlH .27jiH ,33nH .39nH ,47nH ,56|iH .68nH ,82¡iH 1.0(iH 1.2|lH 1.5nH 1.8nH 2.2\iH

om7635sm

Abstract: LM117
Contextual Info: OM7635SM SURFACE MOUNT POSITIVE ADJUSTABLE 1.0 AMP VOLTAGE REGULATOR Isolated Hermetic Surface Mount Package 1.0 Amp, Positive Adjustable Voltage Regulator FEATURES • • • • • • • Hermetic Isolated Surface Mount Package Adjustable Output Voltage

LM117

Abstract: OM7602SM om7602
Contextual Info: OM7602SM SURFACE MOUNT POSITIVE ADJUSTABLE VOLTAGE REGULATOR Three Terminal, Adjustable Voltage, 1.0 Amp Precision Positive Regulator In A Hermetic Surface Mount Package FEATURES • • • • • • • Hermetic Surface Mount Package Adjustable Output Voltage

OM1320NTM

Abstract: 7703401U LM117 OM1320N2M OM1320NKM OM1320NMM OM1320SMM OM1320STM
Contextual Info: OM1320SMM OM1320NMM OM1320NKM OM1320NTM OM1320STM OM1320N2M 1.5 AMP POSITIVE ADJUSTABLE VOLTAGE REGULATOR APPROVED TO DESC DRAWING 7703401 Three Terminal, Precision Adjustable Positive Voltage Regulator In Hermetic Style Packages LM117 Please see mechanical

7703407U

Abstract: LM117AHV OM1326N2M OM1326NKM OM1326NMM OM1326NTM OM1326SMM OM1326STM max1814
Contextual Info: OM1326SMM OM1326NMM OM1326NKM OM1326NTM OM1326STM OM1326N2M 1.5 AMP POSITIVE ADJUSTABLE VOLTAGE REGULATOR APPROVED TO DESC DRAWING 7703407 Three Terminal, Precision Adjustable Positive Voltage Regulator In Hermetic Style Packages LM117AHV Please see mechanical

LM117WGRLQMLV

Abstract: LM117HRQMLV LM117HRLQMLV LM117 LM117KRQMLV LM117QML LM117WGRQMLV LM137 national semiconductor, product catalog equivalent for lm117
Contextual Info: LM117QML 3-Terminal Adjustable Regulator General Description The LM117 series of adjustable 3-terminal positive voltage regulators is capable of supplying either 0.5A or 1.5A over a 1.2V to 37V output range. They are exceptionally easy to use and require only two external resistors to set the output voltage. Further, both line and load regulation are better than

330nF capacitor

Abstract: LM2711 LM2711MT-ADJ LM2711MTX-ADJ MTC20 TSSOP-20
Contextual Info: LM2711 TFT Panel Module General Description Features The LM2711 is a compact bias solution for TFT displays. It has a current mode PWM step-up DC/DC converter with a 1.4A, 0.17Ω internal switch. Capable of generating 8V at 300mA from a Lithium Ion battery, the LM2711 is ideal for

CMOS 7082

Abstract: 105Z16 ECU-V1H103KBV C2012X5R1A105KT GRM42-6X5R475K10 ILC7081 ILC7082 ILC7082AIM5-ADJ ILC7082-XX ceramic capacitor 0.01uf
Contextual Info: Impala Linear Corporation ILC7082 150mA SOT-23 Ultra Low Noise CMOS RF-LDO Regulator General Description Features The ILC7082 is a 150mA low dropout LDO voltage regulator designed to provide a high performance solution to low power systems. The device offers a typical combination of low dropout and low quiescent current expected

sot-23-5 marking code

Abstract: lc7081
Contextual Info: www.fairchildsemi.com ILC7080/81 50/100mA SOT-23 CMOS RF LDO Regulators Features Description • Ultra low 1mV dropout per 1mA load • 1% output voltage accuracy • Uses low ESR ceramic output capacitor to minimize noise and output ripple • Only 100µA ground current at 100mA load

IR502

Contextual Info: IR3502 DATA SHEET XPHASE3TM CONTROL IC DESCRIPTION The IR3502 control IC combined with an XPHASE3TM Phase IC provides a full featured and flexible way to implement a complete VR11.0 and VR11.1 power solution. The IR3502 provides overall system control and interfaces with any number of Phase ICs, each driving and monitoring a single phase. The XPhase3TM