MT8880AC
Abstract: MT8870CE MT8880CE MT8870C JEDEC-22BA102 cd200 mt8870 example code 87Q4 MT8870C-1 MT88L70
Text: MITEL SEMICONDUCTOR RELIABILITY MONITORING PROGRAM 1996 Table of Contents 1 INTRODUCTION TO MITEL RELIABILITY MONITORING . 1-1 2 RELIABILITY MONITOR TEST METHODOLOGY . 2-1
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MT88870CS
MT9126AS
MT8880AC
MT8870CE
MT8880CE
MT8870C
JEDEC-22BA102
cd200
mt8870 example code
87Q4
MT8870C-1
MT88L70
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nmos transistor 0.35 um
Abstract: P854 "vlsi technology" abstract for intel gelato FEM95 20VOLTS his 06 P856
Text: Intel’s 0.25 Micron, 2.0Volts Logic Process Technology A. Brand, A. Haranahalli, N. Hsieh, Y.C. Lin, G. Sery, N. Stenton, B.J. Woo California Technology and Manufacturing Group, Intel Corp. S Ahmed, M. Bohr, S. Thompson, S. Yang Portland Technology Development Group, Intel Corp.
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Untitled
Abstract: No abstract text available
Text: Datasheet | Switches AT-8700XL SERIES Advanced Layer 2 - 4 Access Switches AT-8724XL 24 x 10/100 Layer 2 - Layer 4 with essential Layer 3 functionality and 2 Uplink Bays AT-8748XL 48 x 10/100 Layer 2 - Layer 4 with essential Layer 3 functionality and 2 Uplink Bays
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-8700XL
-8724XL
-8748XL
AT-8724XL
AT-8748XL
AT-8700XL
AT-A42
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Toshiba thyristors
Abstract: bosch motorola 002X5 Flash 1987 delco radio Delco
Text: SGS-THOMSON Microelectronics pre98whi - 1 - March 17 MISSION To offer strategic independence to our partners worldwide, as a profitable and viable broad range semiconductor supplier. pre98whi - 2 - March 17 SGS-THOMSON : A GLOBAL SEMICONDUCTOR COMPANY
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pre98whi
Toshiba thyristors
bosch motorola
002X5
Flash 1987
delco radio
Delco
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IBM ASIC Products
Abstract: nokia 2110 Dataquest
Text: SGS-THOMSON Microelectronics pre98whi - 1 - March 17 MISSION To offer strategic independence to our partners worldwide, as a profitable and viable broad range semiconductor supplier. pre98whi - 2 - March 17 SGS-THOMSON : A GLOBAL SEMICONDUCTOR COMPANY
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pre98whi
IBM ASIC Products
nokia 2110
Dataquest
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IBM 286 schematic
Abstract: MX3232 MX32 MX48 MX68 matra
Text: MATRA DESIGN SEMICONDUCTOR syiraamMiD^ dMü Btküiü MX SERIES 1.55-MICRON 2-LAYER METAL SILICON GATE CMOS GATE ARRAYS Advance Information September 1987 FEATURES • Advanced 1.55u 2-layer metal CMOS technology • High perlbmance -1 .5ns delay through 2-input NAND gate
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55-MICRON
24-state
PC/86/186/286/386
IBM 286 schematic
MX3232
MX32
MX48
MX68
matra
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1034-01
Abstract: 74 series family LP5080A LP5140A LP7080C LP7080P LP7140P LP7220P Laserpath Corporation lsi logic arrays
Text: LSP LASERPATH LP7000P, LP7000C, LP5000A Series Gate Arrays ONE DAY GATE ARRAYS A p ril 1987 Laserpath’s LP7000P, LP7000C, and LP5000A Series are high I/O gate arrays, manufac tured using 2-micron, 2-layer metal HCMOS technology. They have the same electrical
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LP7000P,
LP7000C,
LP5000A
LP7080Pâ
LP7080C
LP5080A
LP5600A
1034-01
74 series family
LP5080A
LP5140A
LP7080C
LP7080P
LP7140P
LP7220P
Laserpath Corporation
lsi logic arrays
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Untitled
Abstract: No abstract text available
Text: MX SERIES 1.55-MICRON 2-LAYER METAL SILICON GATE CMOS GATE ARRAYS MATRA DESIGN SEMICDNDUCIDR Advance Information September 1987 FEATURES • Advanced 1.55u 2-layer metal CMOS technology • High perfomance - 1 .5ns delay through 2-input NAN D gate Ta= 25 deg C, VDD = 5V, fanout= 3 + 1OOOum
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55-MICRON
b/186/286/386
24-state
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Untitled
Abstract: No abstract text available
Text: * AT&T Preliminary Data Sheet ALA400/401 Linear Array Family Description The ALA400/401 Linear Array Family is fabricated using the complementary bipolar integrated circuit CBIC process that offers the advantages of vertical NPN and vertical PNP transistors. CBIC technology
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ALA400/401
51AL230240
D-8000
DS87-61LBC
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2500ECL
Abstract: Motorola Bipolar Power Transistor Data Double Die IC 566 function generator HCA62A17 CMOS 4032 1987 Micron Technology Micron NAND bca 1st motorola ECL motorola mca
Text: BR334/D Rev 3 Motorola Semicustom gives the designer the same process-technology choices available for discrete-logic designs, and the option of Macrocell array or cell-based func tions for commercial and military applications. • For very high speeds — state-of-the-art ECL arrays.
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BR334/D
2500ECL
Motorola Bipolar Power Transistor Data Double Die
IC 566 function generator
HCA62A17
CMOS 4032
1987 Micron Technology
Micron NAND
bca 1st
motorola ECL
motorola mca
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HCA62A17
Abstract: No abstract text available
Text: BR334/D Rev 3 Motorola Semicustom gives the designer the same process-technology choices available for discrete-logic designs, and the option of Macrocell array or cell-based func tions for commercial and military applications. • For very high speeds — state-of-the-art ECL arrays.
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BR334/D
HCA62A17
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pnp 8 transistor array
Abstract: ALA400 transistor BIPOLAR npn 8 transistor array 1000 volt pnp transistor JFET 401 ARRAY resistor DS87-61LBC kss 216 complementary JFET
Text: AT&T Preliminary Data Sheet ALA400/401 Linear Array Fam ily Description The ALA400/401 Linear Array Family is fabricated using the complementary bipolar integrated circuit CBIC process that offers the advantages of vertical NPN and vertical PNP transistors. CBIC technology
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ALA400/401
51AL230240
D-8000
DS87-61LBC
pnp 8 transistor array
ALA400
transistor BIPOLAR
npn 8 transistor array
1000 volt pnp transistor
JFET 401
ARRAY resistor
DS87-61LBC
kss 216
complementary JFET
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Untitled
Abstract: No abstract text available
Text: Integrated Device Technology. Inc C M O S PARALLEL FIR ST-IN/FIRST-O UT FIFO 8K x 9-BIT advance in fo r ^ ion 1017205 FEATURES: DESCRIPTION: • • • • • • • • • • • • • • The IDT7205 is a dual-port memory that utilizes a special FirstIn/First-Out algorithm that loads and empties data on a first-in/firstout basis. The device uses Full and Empty flags to prevent data
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IDT7205
IDT7200/01/02/03/04
28-pin
32-pin
MIL-STD-883,
DSC-2006/-
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Untitled
Abstract: No abstract text available
Text: Am29027 Arithmetic Accelerator ADVANCE INFORMATION ¿Z06ZWV DISTINCTIVE CHARACTERISTICS • • • • • • High-speed floating-point accelerator for the Am29000 processor Comprehensive floating-point and integer instruction sets Single-, double-, and mixed-precision operations
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Am29027
Z06ZWV
Am29000
64-bit
169-lead
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"GE Solid state"
Abstract: No abstract text available
Text: 7 7 fi ISP9520/ISP9521 GE Solid State Multilevel Pipeline Register GENERAL DESCRIPTION FEATURES The ISP9520 and ISP9521 are multilevel pipeline regis ters implemented using Intersil’s 1.5 micron CMOS AVLSI technology. This high performance process allows the
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ISP9520
ISP9521
AM29520
"GE Solid state"
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austek
Abstract: No abstract text available
Text: UNITED MICROELECTRONICS U M 8 2 ÍS 2 3QE D =1325052 00 001 72 7 5 3 33-.31 - Cache Controller Features • ■ ■ ■ Controls 32-kB, 4-way r set-associative cache Available in 16-MHz, 20-MHz, and 25-MHz speeds Direct interface to the 80386 Direct interface to industry-standard 8K x 8 SRAMs:
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32-kB,
16-MHz,
20-MHz,
25-MHz
16-MHz
20-MHz
84-lead
A38152*
ADDR13
austek
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austek
Abstract: A38152 UM82152
Text: UNITED MICROELECTRONICS UM 821S2 3QE 1 » 13BS8SB 0 0 0 0 1 7 5 ? • ~T^5 3 - 3 3 - < 3 l Cache Controller Features ■ ■ ■ ■ Controls 32-kB, 4-way r set-associative cache Available in 16-MHz, 20-MHz, and 25-MHz speeds Direct interface to the 80386
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UM82152
32-kB,
16-MHz,
20-MHz,
25-MHz
16-MHz
20-MHz
32-bit
84-lead
austek
A38152
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AM29520
Abstract: ISP9520 ISP9520CPX ISP9520IJX ISP9520MMX ISP9521 ISP9521CPX ISP9521IJX GE solid state "GE Solid state"
Text: 7 7 ^ / fC ' • / •■- / 7 ISP9520/ISP9521 GE Solid State Multilevel Pipeline Register GENERAL DESCRIPTION FEATURES The ISP9520 and ISP9521 are multilevel pipeline regis ters implemented using Intersil’s 1.5 micron CMOS AVLSI technology. This high performance process allows the
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ISP9520
ISP9521
AM29520
AM29521.
ISP9520CPX
ISP9520IJX
ISP9520MMX
ISP9521CPX
ISP9521IJX
GE solid state
"GE Solid state"
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6REV
Abstract: No abstract text available
Text: ADVANCE -. TE C? x .N-StÜT ü H E MT28F016S2 FLASH MEMORY S m artV oltag e • • • • • • • • • PIN ASSIGNMENT Top View Thirty-two 64KB erase blocks Programmable sector protect Deep Power-Down Mode: lO pA M A X Second Generation Sm artVoltage Technology (SVT-II):
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120ns
100ns,
150ns
MT28F016S2
40-Pln
VPS12/23
6REV
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IDT7205
Abstract: No abstract text available
Text: INTEGRATE» D E V I C E T ? j i| 4Ö5S771 DDDlñOT b | ~ i 4825771 INTEGRATED DEVICE Integrated DevlceTfechnblogy. Inc. 97D 01809 ADVANCE INFORMATION IDT7205 CMOS PARALLEL FIRST-IN/FIRST-OUT FIFO 8 K x 9-BIT T -*/b-35 FEATURES: DESCRIPTION: • • • •
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5S771
IDT7205
/b-35
IDT7205
IDT7200/01/02/03/04
28-pln
32-pln
MIL-STD-883,
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ATMEL AT27c512
Abstract: ATMEL 515 27C515 27c515-15 AT27C512 ATMEL AT27c513 27C515-17 27C512 128K 27C512-12 27c513
Text: Features • • • * • * • * * * Paged Configurations with Page Reset on Power-Up AT27C512 - Not Paged, 64K x 8 AT27C513 - 4 Pages, 16K X 8 AT27C515 - 2 Pages, 32K x 8 Low Power CMOS Operation 100 ¿¿A max. Standby 40 mA max. Active at 5 MHz Fast Read Access Time - 120ns
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AT27C512
AT27C513
AT27C515
120ns
28-Lead
32-Pad
200mA
AT27C515
ATMEL AT27c512
ATMEL 515
27C515
27c515-15
ATMEL AT27c513
27C515-17
27C512 128K
27C512-12
27c513
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Untitled
Abstract: No abstract text available
Text: PRELIMINARY !. A S H M E M O F? V FLASH MEMORY MT28F200B5 ET, MT28F400B5 ET, MT28F800B5 ET Smart 5 Extended Temperature FEATURES PIN ASSIGNMENT Top View • Extended temperature range operation: -40°C to +85°C • Boot block architecture: 16KB/4K-word boot block (protected)
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16KB/4K-word
128KB/64K-word
MT28F200B5
MT28F400B5
MT28F800B5
44-Pin
16-bit
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ATMEL AT27c512
Abstract: 27C512 128K ATMEL 515 AT27C512 27c513 27C515-15 27C512 27C512 RESET 27C512-15 atmel 748
Text: Features * Paged Configurations with Page Reset on Power-Up AT27C512 - Not Paged, 64K x 8 AT27C513 - 4 Pages, 16K X 8 AT27C515 - 2 Pages, 32K x 8 * Low Power CMOS Operation 100 jjlA max. Standby 40 mA max. Active at 5 MHz * Fast Read Access Time - 120ns * Wide Selection of JEDEC Standard Packages incl. OTP
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AT27C512
AT27C513
AT27C515
120ns
28-Lead
32-Pad
200mA
fctol25fc)
ATMEL AT27c512
27C512 128K
ATMEL 515
27c513
27C515-15
27C512
27C512 RESET
27C512-15
atmel 748
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MT28F400B1
Abstract: No abstract text available
Text: *V K p i i c z R a f s j v O O i B!. i ' * f FLASH MEMORY m a r tV o lt a g e PIN ASSIGNMENT Top View 44-Pln SOP » Seven erase blocks: 16KB/8K-word boot block (protected) Two 8KB /4K-word param eter blocks Four main memory blocks • SmartVoltage Technology (SVT):
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16KB/8K-word
110ns
44-Pln
OP200
16-bit
MT28F400B1
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