19A, 200V, P-CHANNEL POWER MOSFET Search Results

FRE9260

Abstract: delta plc 1E14 2E12 FRE9260D FRE9260H FRE9260R 19A, 200V, P-Channel Power MOSFET Rad Hard in Fairchild for MOSFET
Contextual Info: FRE9260D, FRE9260R, FRE9260H 19A, -200V, 0.210 Ohm, Rad Hard, P-Channel Power MOSFETs June 1998 Features Package • 19A, -200V, RDS on = 0.210Ω TO-258AA • Second Generation Rad Hard MOSFET Results From New Design Concepts • Gamma • Gamma Dot • Photo Current

delta plc

Abstract: 1E14 2E12 FRE9260D FRE9260H FRE9260R
Contextual Info: FRE9260D, FRE9260R, FRE9260H 19A, -200V, 0.210 Ohm, Rad Hard, P-Channel Power MOSFETs June 1998 Features Package • 19A, -200V, RDS on = 0.210Ω TO-258AA • Second Generation Rad Hard MOSFET Results From New Design Concepts • Gamma • Gamma Dot • Photo Current

FRE9260

Abstract: 100KRAD
Contextual Info: CK h U ü a r r is ••«'coKouco- FRE9260D, FRE9260R, FRE9260H 19A, -200V, 0.210 Ohm, Rad Hard, P-Channel Power MOSFETs june 1998 Package Features • 19A, -200V, RDS on) = 0.210il TO-25BAA • Second Generation Rad Hard MOSFET Results From New Design Concepts

Contextual Info: yw us FRE9260D, FRE9260R, FRE9260H 19A, -200V, 0.210 Ohm, Rad Hard, P-Channel Power MOSFETs June 1998 Features Package • 19A, -200V, RDS on = 0.210£1 TO-258AA • Second Generation Rad Hard MOSFET Results From New Design Concepts • Gamma - Meets Pre-Rad Specifications to 100KRAD(SI)

Contextual Info: HARRIS 2N7331D, 2N7331R S E M I C O N D U C T O R PRELIMINARY REGISTRATION PENDING Currently Available as FRE9260 D, R, H . x. . . Radiation Hardened P-Channel Power MOSFETs January 1993 Package Features • 19A.-200V, RDS(on) = 0.21 Oil TO-258 • Second Generation Rad Hard MOSFET Results From New Design Concepts

KHB019N20P1

Abstract: KHB019N20F1
Contextual Info: KHB019N20P1/F1 SEMICONDUCTOR N CHANNEL MOS FIELD EFFECT TRANSISTOR TECHNICAL DATA General Description KHB019N20P1 This planar stripe MOSFET has better characteristics, such as fast switching time, low on resistance, low gate charge and excellent avalanche characteristics. It is mainly suitable for DC/DC converters

Contextual Info: SEMICONDUCTOR KHB019N20P1/F1 TECHNICAL DATA N CHANNEL MOS FIELD EFFECT TRANSISTOR General Description This planar stripe MOSFET has better characteristics, such as fast switching time, low on resistance, low gate charge and excellent avalanche characteristics. It is mainly suitable for DC/DC converters

Contextual Info: SEMICONDUCTOR KHB019N20P1/F1/F2 TECHNICAL DATA N CHANNEL MOS FIELD EFFECT TRANSISTOR General Description KHB019N20P1 A This planar stripe MOSFET has better characteristics, such as fast switching time, low on resistance, low gate charge and excellent avalanche characteristics. It is mainly suitable for DC/DC converters

KHB019N20F1

Abstract: KHB019N20F2 KHB019N20P1
Contextual Info: SEMICONDUCTOR KHB019N20P1/F1/F2 TECHNICAL DATA N CHANNEL MOS FIELD EFFECT TRANSISTOR General Description KHB019N20P1 A This planar stripe MOSFET has better characteristics, such as fast switching time, low on resistance, low gate charge and excellent avalanche characteristics. It is mainly suitable for DC/DC converters

KHB019N20F2

Abstract: KHB019N20F1 KHB019N20P
Contextual Info: SEMICONDUCTOR KHB019N20P1/F1/F2 TECHNICAL DATA N CHANNEL MOS FIELD EFFECT TRANSISTOR General Description KHB019N20P1 A This planar stripe MOSFET has better characteristics, such as fast switching time, low on resistance, low gate charge and excellent avalanche characteristics. It is mainly suitable for DC/DC converters

2N7331D

Abstract: 2E12 2N7331H 2N7331R
Contextual Info: S E M I C O N D U C T O R REGISTRATION PENDING Currently Available as FRE9260 D, R, H 2N7331D, 2N7331R 2N7331H Radiation Hardened N-Channel Power MOSFETs November 1994 Features Package • 19A, -200V, RDS(on) = 0.210Ω TO-258 • Second Generation Rad Hard MOSFET Results From New Design Concepts

Contextual Info: SEMICONDUCTOR KHB019N20P1/F1 TECHNICAL DATA N CHANNEL MOS FIELD EFFECT TRANSISTOR General Description KHB019N20P1 A This planar stripe MOSFET has better characteristics, such as fast switching time, low on resistance, low gate charge and excellent avalanche characteristics. It is mainly suitable for DC/DC converters

Contextual Info: 4305271 GG53b4G 7H2 H H A S fS5 h a r r i s UU 2N7331D, 2N7331R S E M I C O N D U C T O R 2 REGISTRATION PENDING Currently Available as FRE9260 D, R, H N 7 3 3 1 H . Radiation Hardened N-Channel Power MOSFETs A pril 1994 Package Features • 19A, -200V, RDS(on) = 0.210Q

Contextual Info: ì li h a r r is U U I S E M IC O N D U C T O R FRE260D, FRE260R, FFÌE260H 31 A, 200V, 0.080 Ohm, Rad Hard, N-Channel Power MOSFETs June 1998 Package Features • 31 A, 200V, RDS on = 0.0800 TO-258AA • Second Generation Rad Hard MOSFET Results From New Design Concepts

Contextual Info: HARRIS SEfllCOND S E C T O R CSÎ h a f r f r is U U bSE T> m 4302271 OGNIDbb D O 6] H H A S 2N7302D, 2N7302R S E M I C O N D U C T O R REGISTRATION PENDING Currently Available as FRE260 D, R, H juneigg3 Features . Radiation Hardened N-Channel Power MOSFETs

1E14

Abstract: 2E12 2N7302D 2N7302H 2N7302R 2N7302
Contextual Info: S E M I C O N D U C T O R REGISTRATION PENDING Currently Available as FRE260 D, R, H 2N7302D, 2N7302R 2N7302H Radiation Hardened N-Channel Power MOSFETs November 1994 Features Package • 31A, 200V, RDS(on) = 0.080Ω TO-258 • Second Generation Rad Hard MOSFET Results From New Design Concepts

1E14

Abstract: 2E12 FRE260D FRE260H FRE260R
Contextual Info: FRE260D, FRE260R, FRE260H 31A, 200V, 0.080 Ohm, Rad Hard, N-Channel Power MOSFETs June 1998 Features Package • 31A, 200V, RDS on = 0.080Ω TO-258AA • Second Generation Rad Hard MOSFET Results From New Design Concepts • Gamma • Gamma Dot • Photo Current

Contextual Info: y*Rg*s FRE260D, FRE260R, FRE260H 31 A, 200V, 0.080 Ohm, Rad Hard, N-Channel Power MOSFETs June 1998 Features Package • 31 A, 200V, RDS on = 0.080£i TO-258AA • Second Generation Rad Hard MOSFET Results From New Design Concepts • Gamma - Meets Pre-Rad Specifications to 100KRAD(Si)

Contextual Info: H a rris 2N7331D, 2N7331R 21^733 1H S E M I C O N D U C T O R REGISTRATION PENDING Currently Available as FRE9260 D, R, H November 1994 R a d iatio n H ard en e d N -C h a n n e l P o w er M O S FE Ts Package Features • 19A, -200V, RDS(on) = 0.21Oft TO-258

star delta plc

Abstract: delta plc 1E14 2E12 FRE260D FRE260H FRE260R Rad Hard in Fairchild for MOSFET 214 fairchild transistor
Contextual Info: FRE260D, FRE260R, FRE260H 31A, 200V, 0.080 Ohm, Rad Hard, N-Channel Power MOSFETs June 1998 Features Package • 31A, 200V, RDS on = 0.080Ω TO-258AA • Second Generation Rad Hard MOSFET Results From New Design Concepts • Gamma • Gamma Dot • Photo Current

Contextual Info: MITSUBISHI Neh POWER MOSFET FK18SM-10 HIGH-SPEED SWITCHING USE FK18SM-10 OUTLINE DRAWING Dimensions in mm .4.5. 15.9MAX. 1.5 3.2 4.4 1.0 5.45 5.45 0.6 If Q w . . 500V ' V ' rDS ON (M A X ). . 0.50Í2

FK18SM-12

Contextual Info: MITSUBISHI Neh POWER MOSFET FK18SM-12 HIGH-SPEED SWITCHING USE FK18SM-12 OUTLINE DRAWING Dimensions in mm 4.5 15.9MAX. 1.5 T O <t>3.2 5.45 0.6 4 Q w r V d s s .60 0 V rDS ON (MAX). 0.54Î2

10lbxin

Abstract: classd audio amplifier
Contextual Info: PD - 96909 IRFB4103PbF DIGITAL AUDIO MOSFET Features • Key parameters optimized for Class-D audio amplifier applications • Low RDSON for improved efficiency • Low QG and QSW for better THD and improved efficiency • Low QRR for better THD and lower EMI

digital audio mosfet

Abstract: PN channel MOSFET 10A
Contextual Info: PD - 96909 IRFB4103PbF DIGITAL AUDIO MOSFET Features • Key parameters optimized for Class-D audio amplifier applications • Low RDSON for improved efficiency • Low QG and QSW for better THD and improved efficiency • Low QRR for better THD and lower EMI