19DEC96 Search Results

Contextual Info: T em ic SÌ3457DV S e m i c o n d u c t o r s P-Channel 30-V D-S Rated MOSFET Product Summary -30 fDS(on) (Q) I d (A) 0.065 @ VGS = -10 V ±4.3 0.100 @ VGs = -4.5 V ±3.4 (4 ) S P T S O P -6 Top V iew Œ Œ Œ ? o * eT 1 6 2 5 3 4 n n n (3 ) G ni Power Dissipation

Contextual Info: Tem ic SÌ9802DY S e m i c o n d u c t o r s Dual N-Channel Reduced Qg, Fast Switching MOSFET Product Summary V D S V 20 r D S (on)(^) I d (A ) 0.055 @ V os = 4.5 V ± 4 .5 0.075 @ Vo s = 3.0 V ± 3 .8 Dì U SO-8 s, Tl Q _ o, [T S2 CE G- GE D, °i ~ T |

Si9802DY

Contextual Info: Si9802DY Vishay Siliconix Dual N-Channel Reduced Qg, Fast Switching MOSFET PRODUCT SUMMARY VDS V 20 rDS(on) (W) ID (A) 0.055 @ VGS = 4.5 V "4.5 0.075 @ VGS = 3.0 V "3.8 D1 D1 D2 D2 SO-8 S1 1 8 D1 G1 2 7 D1 S2 3 6 D2 G2 4 5 D2 G1 G2 Top View S1 S2 N-Channel MOSFET

Si9801DY

Abstract: SILICONIX Si9801DY
Contextual Info: Si9801DY N- and P-Channel, Reduced Qg, Fast Switching Half-Bridge Product Summary VDS V N-Channel 20 P-Channel –20 rDS(on) (W) ID (A) 0.055 @ VGS = 4.5 V "4.5 0.075 @ VGS = 3.0 V "3.8 0.080 @ VGS = –4.5 V "4.0 0.120 @ VGS = –3.0 V "3.0 S2 SOĆ8 S1

si3457dv

Contextual Info: Si3457DV P-Channel 30-V D-S Rated MOSFET Product Summary VDS (V) –30 rDS(on) DS( ) (W) ID (A) 0.065 @ VGS = –10 V "4.3 0.100 @ VGS = –4.5 V "3.4 (4) S TSOP-6 Top View 1 6 (3) G 3 mm 2 5 3 4 Power Dissipation Si3457DV—2.0 W (1, 2, 5, 6) D 2.85 mm

Si9802DY

Contextual Info: Si9802DY Vishay Siliconix Dual N-Channel Reduced Qg, Fast Switching MOSFET PRODUCT SUMMARY VDS V 20 rDS(on) (W) ID (A) 0.055 @ VGS = 4.5 V "4.5 0.075 @ VGS = 3.0 V "3.8 D1 D1 D2 D2 SO-8 S1 1 8 D1 G1 2 7 D1 S2 3 6 D2 G2 4 5 D2 G1 G2 Top View S1 S2 N-Channel MOSFET

Contextual Info: r 7 THIS DRAWING 15 UNPUBLISHED. RELEASED FOR PUBLICATION COPYRIGHT 19 BY AMP INCORPORATED. ,19 ALL RIGHTS RESERVED. D 3 . 5 1 ±0 . 0 5 C TYP B A HOLE LAYOUT AMP >4805 REV 09MAY94 19-DEC-96 15:44:43 amp27018 /home/ssrv026d/dsk02/dept1329/amp27018/êdmmod

70643

Abstract: dual gate p-channel Si4807DY
Contextual Info: Si4807DY Dual Gate, P-Channel 30-V D-S Rated MOSFET Product Summary VDS (V) Gate 1 30 rDS(on) (W) ID (A) 0.035 @ VGS = –10 V "6 0.054 @ VGS = –4.5 V "4.8 1.3 @ VGS = –10 V "0.9 2.2 @ VGS = –4.5 V "0.7 Gate 2 D SOĆ8 G2 1 8 NC G1 2 7 D S 3 6 D S 4

Contextual Info: Si3457DV P-Channel 30-V D-S Rated MOSFET Product Summary VDS (V) –30 rDS(on) DS( ) (W) ID (A) 0.065 @ VGS = –10 V "4.3 0.100 @ VGS = –4.5 V "3.4 (4) S TSOP-6 Top View 1 6 (3) G 3 mm 2 5 3 4 Power Dissipation Si3457DV—2.0 W (1, 2, 5, 6) D 2.85 mm

visba

Contextual Info: _ SÌ9802DY Vishay Siliconix Dual N-Ch Reduced Qg, Fast Switching MOSFET 20 R d s o n Id (A) 0.055 & V GS = 4.5V ±4.5 0.075 @ VGS = 3.0 V ±3.8 u SO-8 u D2 Di ,ut »J Dt d2 D2 Ô Si Ô s2 N-Channel M O SFET N-Channel M O SFET

Contextual Info: •mis DRAWING IS UNPUBLISHED. RELEASED FOR PUBLICATION BY AMP INCORPORATED. COPYRIGHT 19 ^ ,19 LOC CE RIGHTS RESERVED. DIST REVISIONS 16 APVD DATE DESCRIPTION LTR REVISE PER OAOO—0731 —99 CK 09AUG99 KC D D 1. D IM E N S IO N S IN [ ] ARE IN IN C H ES.

Si9802DY

Contextual Info: Si9802DY Dual N-Channel Reduced Qg, Fast Switching MOSFET Product Summary VDS V 20 rDS(on) (W) ID (A) 0.055 @ VGS = 4.5 V "4.5 0.075 @ VGS = 3.0 V "3.8 D1 D1 D2 D2 SO-8 S1 1 8 D1 G1 2 7 D1 S2 3 6 D2 G2 4 5 D2 G1 G2 Top View S1 N-Channel MOSFET S2 N-Channel MOSFET

51301

Contextual Info: T e m ic SÌ9801DY Semiconductors Dual N- and P-Channel, Reduced Qg>Fast Switching Half-Bridge Product Summary V ns V N-Channel 20 P-Channel -20 r DS(on) (Q ) 0.055 @ VGS = 4.5 V 0.075 @ VGS = 3.0 V 0.080 @ VGS = -4.5 V 0.120 @ VGS = '3 .0 V I d (A) ±4.5

Si9802DY

Contextual Info: Si9802DY Dual N-Channel Reduced Qg, Fast Switching MOSFET Product Summary VDS V 20 rDS(on) (W) ID (A) 0.055 @ VGS = 4.5 V "4.5 0.075 @ VGS = 3.0 V "3.8 D1 D1 D2 D2 SO-8 S1 1 8 D1 G1 2 7 D1 S2 3 6 D2 G2 4 5 D2 G1 G2 Top View S1 N-Channel MOSFET S2 N-Channel MOSFET