19JUN06 Search Results

Contextual Info: 6 7 THIS DRAWING IS UNPUBLISHED. COPYRIGHT - 5 4 3 2 RELEASED FOR PUBLICATION BY TYCO ELECTRONICS CORPORATION. LOC ALL RIGHTS RESERVED. AD REVISIONS DIST 00 LTR B CONTAC 3 .7 REE 2 4 .0 Í Íÿ Íï Íÿ Íï Íÿ Íï Íÿ Íï ÿ JDP GES I 9JUN06 0512-0304-05

Si4906DY-T1-E3

Abstract: si4906 SI4906DY
Contextual Info: Si4906DY Vishay Siliconix New Product Dual N-Channel 40-V D-S MOSFET PRODUCT SUMMARY VDS (V) N-Channel 40 FEATURES rDS(on) (Ω) ID (A)a 0.039 at VGS = 10 V 6.6 0.050 at VGS = 4.5 V 5.8 Qg (Typ) • TrenchFET Power MOSFET • 100 % Rg and UIS tested 6.6

Si4842BDY

Abstract: Si4842BDY-T1-E3
Contextual Info: Si4842BDY Vishay Siliconix New Product N-Channel 30-V D-S MOSFET FEATURES PRODUCT SUMMARY VDS (V) 30 rDS(on) (Ω) ID (A)a 0.0042 at VGS = 10 V 28 0.0057 at VGS = 4.5 V 24 • TrenchFET Power MOSFET • 100 % Rg Tested Qg (Typ) RoHS COMPLIANT 29 nC SO-8

Si7634DP

Abstract: Si7634DP-T1-E3 si7634
Contextual Info: Si7634DP Vishay Siliconix New Product N-Channel 30-V D-S MOSFET FEATURES PRODUCT SUMMARY rDS(on) (Ω) ID (A)a 0.0052 at VGS = 10 V 40 0.0076 at VGS = 4.5 V 40 VDS (V) 30 Qg (Typ) 21 nC COMPLIANT • Notebook PC core - Low side - High side S D 5.15 mm 1 RoHS

c code example zigbee

Abstract: zigbee rssi
Contextual Info: Pixie Switcher Message Reference FlexiPanel Introduction Pixie Switcher products can generate diagnostic messages. These are provided for informational and educational purposes. It is not necessary to understand them in order to use Pixie Switcher products. If not

Si4356ADY

Abstract: TB-17 Si4356ADY-T1-E3
Contextual Info: Si4356ADY Vishay Siliconix New Product N-Channel 30-V D-S MOSFET FEATURES PRODUCT SUMMARY VDS (V) 30 rDS(on) (Ω) ID (A)a 0.0055 at VGS = 10 V 26 0.0068 at VGS = 4.5 V 23 • TrenchFET Power MOSFET • 100 % Rg Tested Qg (Typ) RoHS COMPLIANT 30 nC APPLICATIONS

Contextual Info: Si4884BDY Vishay Siliconix New Product N-Channel 30-V D-S MOSFET FEATURES PRODUCT SUMMARY VDS (V) 30 rDS(on) (Ω) ID (A)a 0.0090 at VGS = 10 V 16.5 0.012 at VGS = 4.5 V 13.2 • TrenchFET Power MOSFET • PWM Optimized Qg (Typ) RoHS COMPLIANT 10.5 nC SO-8

Contextual Info: Si4842BDY Vishay Siliconix New Product N-Channel 30-V D-S MOSFET FEATURES PRODUCT SUMMARY VDS (V) 30 rDS(on) (Ω) ID (A)a 0.0042 at VGS = 10 V 28 0.0057 at VGS = 4.5 V 24 • TrenchFET Power MOSFET • 100 % Rg Tested Qg (Typ) RoHS COMPLIANT 29 nC SO-8

SI4972DY

Contextual Info: Si4972DY Vishay Siliconix New Product Dual N-Channel 30-V D-S MOSFET PRODUCT SUMMARY VDS (V) Channel 1 Channel 2 FEATURES ID (A)a Qg (Typ) rDS(on) (Ω) 30 30 0.0145 at VGS = 10 V 10.8 0.0195 at VGS = 4.5 V 9.3 0.0265 at VGS = 10 V 7.2 0.036 at VGS = 4.5 V

Si4884BDY

Abstract: Si4884BDY-T1-E3
Contextual Info: Si4884BDY Vishay Siliconix New Product N-Channel 30-V D-S MOSFET FEATURES PRODUCT SUMMARY VDS (V) 30 rDS(on) (Ω) ID (A)a 0.0090 at VGS = 10 V 16.5 0.012 at VGS = 4.5 V 13.2 • TrenchFET Power MOSFET • PWM Optimized Qg (Typ) RoHS COMPLIANT 10.5 nC SO-8

SI7882DP-T1-E3

Abstract: Si7882DP Si7882DP-T1
Contextual Info: Si7882DP Vishay Siliconix N-Channel Reduced Qg, Fast Switching MOSFET FEATURES PRODUCT SUMMARY VDS V 12 rDS(on) (Ω) ID (A) 0.0055 at VGS = 4.5 V 22 0.008 at VGS = 2.5 V 18 • TrenchFET Power MOSFET • New Low Thermal Resistance PowerPAK® Package with Low 1.07 mm Profile

Si4972DY-T1-E3

Abstract: SI4972DY
Contextual Info: Si4972DY Vishay Siliconix New Product Dual N-Channel 30-V D-S MOSFET PRODUCT SUMMARY VDS (V) Channel 1 Channel 2 FEATURES ID (A)a Qg (Typ) rDS(on) (Ω) 30 30 0.0145 at VGS = 10 V 10.8 0.0195 at VGS = 4.5 V 9.3 0.0265 at VGS = 10 V 7.2 0.036 at VGS = 4.5 V

Si4392ADY

Abstract: Si4392ADY-T1-E3
Contextual Info: Si4392ADY Vishay Siliconix New Product N-Channel Reduced Qg, Fast Switching WFET FEATURES PRODUCT SUMMARY VDS V 30 rDS(on) (Ω) ID (A)a 0.0075 at VGS = 10 V 21.5 0.0115 at VGS = 4.5 V 17.4 • Extremely Low Qgd WFET Technology for Low Switching Losses

types of resistors

Abstract: 1682e
Contextual Info: 2E Vishay Sfernice Fixing Accessories for Wirewound Resistors Equipped with AN Collars Suitable for RW - RA - RSSD - RSO FEATURES • They are available in three versions: - Bracket 2E N Shape - Bracket 2E U Shape - Brackets 2E T or 2E Z shape These 2E double right-angle brackets are designed to fix

Si1488DH

Contextual Info: Si1488DH Vishay Siliconix New Product N-Channel 20-V D-S MOSFET FEATURES PRODUCT SUMMARY VDS (V) 20 rDS(on) (Ω) ID (A) 0.049 at VGS = 4.5 V 6.1a 0.056 at VGS = 2.5 V 5.7 0.065 at VGS = 1.8 V • TrenchFET Power MOSFET • 100 % Rg & UIS Tested Qg (Typ)

ILSB-1206

Contextual Info: ILSB-1206 Vishay Dale Monolithic Chip Inductors FEATURES • • • • High reliability Surface mountable Magnetically self shielded Nickel barrier plating virtually eliminates silver migration • 100 % lead Pb -free and RoHS compliant MECHANICAL SPECIFICATIONS

Contextual Info: Si4812BDY Vishay Siliconix New Product N-Channel 30-V D-S MOSFET with Schottky Diode FEATURES MOSFET PRODUCT SUMMARY VDS (V) rDS(on) (Ω) 30 ID (A) 0.016 at VGS = 10 V 9.5 0.021 at VGS = 4.5 V 7.7 • LITTLE FOOT Plus Power MOSFET • 100 % Rg Tested RoHS

SI4906DY

Contextual Info: Si4906DY Vishay Siliconix New Product Dual N-Channel 40-V D-S MOSFET PRODUCT SUMMARY VDS (V) N-Channel 40 FEATURES rDS(on) (Ω) ID (A)a 0.039 at VGS = 10 V 6.6 0.050 at VGS = 4.5 V 5.8 Qg (Typ) • TrenchFET Power MOSFET • 100 % Rg and UIS tested 6.6

Si4304DY

Contextual Info: Si4304DY Vishay Siliconix New Product N-Channel 30-V D-S MOSFET FEATURES PRODUCT SUMMARY rDS(on) (Ω) ID (A)a 0.0032 at VGS = 10 V 36 0.0037 at VGS = 4.5 V 29 VDS (V) 30 Qg (Typ) • TrenchFET Power MOSFET • 100 % Rg Tested RoHS COMPLIANT 36 nC APPLICATIONS

Contextual Info: Si4324DY Vishay Siliconix New Product N-Channel 30-V D-S MOSFET FEATURES PRODUCT SUMMARY VDS (V) 30 rDS(on) (Ω) ID (A)a 0.0032 at VGS = 10 V 36 0.0042 at VGS = 4.5 V 29 • TrenchFET Power MOSFET • 100 % Rg Tested Qg (Typ) RoHS COMPLIANT 25.5 nC APPLICATIONS

Contextual Info: Si7882DP Vishay Siliconix N-Channel Reduced Qg, Fast Switching MOSFET FEATURES PRODUCT SUMMARY VDS V 12 rDS(on) (Ω) ID (A) 0.0055 at VGS = 4.5 V 22 0.008 at VGS = 2.5 V 18 • TrenchFET Power MOSFET • New Low Thermal Resistance PowerPAK® Package with Low 1.07 mm Profile

Contextual Info: ILSB-0603 Vishay Dale Monolithic Chip Inductors FEATURES • • • • High reliability Surface mountable Magnetically self shielded Nickel barrier plating virtuallly eliminates silver migration • Compliant to RoHS directive 2002/95/EC MECHANICAL SPECIFICATIONS

Contextual Info: ILSB-0805 Vishay Dale Monolithic Chip Inductors FEATURES • • • • High reliability Surface mountable Magnetically self shielded Nickel barrier plating virtually eliminates silver migration • 100 % lead Pb -free and RoHS compliant MECHANICAL SPECIFICATIONS

half bridge pwm controller

Abstract: MLP44-16 Si9122 SiP11203DLP-T1-E3 SiP11204DLP-T1-E3 Current-doubler rectifier
Contextual Info: SiP11203/SiP11204 Vishay Siliconix Synchronous Rectifier Driver with Power Up/Down Control, Output OVP, Error Amplifier and Precision Reference DESCRIPTION The SiP11203/SiP11204 provide the secondary side error amplifier, reference voltage and synchronous