1MX18 Search Results
1MX18 Datasheets Context Search
Catalog Datasheet | Type | Document Tags | |
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K7Q161852A
Abstract: K7Q161852A-FC10 K7Q161852A-FC13 K7Q161852A-FC16 K7Q163652A K7Q163652A-FC10 K7Q163652A-FC13 K7Q163652A-FC16
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K7Q163652A K7Q161852A 512Kx36 1Mx18 512Kx36-bit, 1Mx18-bit K7Q161852A K7Q161852A-FC10 K7Q161852A-FC13 K7Q161852A-FC16 K7Q163652A K7Q163652A-FC10 K7Q163652A-FC13 K7Q163652A-FC16 | |
10D-11
Abstract: K7R160982B K7R160982B-FC16 K7R160982B-FC20 K7R161882B K7R161882B-FC16 K7R161882B-FC20 K7R163682B K7R163682B-FC16 K7R163682B-FC20
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K7R163682B K7R161882B K7R160982B 512Kx36 1Mx18 512Kx36-bit, 1Mx18-bit, 10D-11 K7R160982B K7R160982B-FC16 K7R160982B-FC20 K7R161882B K7R161882B-FC16 K7R161882B-FC20 K7R163682B K7R163682B-FC16 K7R163682B-FC20 | |
K7Q161864B-FC16
Abstract: D0-35 K7Q161864B K7Q163664B K7Q163664B-FC16
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K7Q163664B K7Q161864B 512Kx36 1Mx18 512Kx36-bit, 1Mx18-bit K7Q161864B-FC16 D0-35 K7Q161864B K7Q163664B K7Q163664B-FC16 | |
K7N161801A
Abstract: K7N163601A
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K7N163601A K7N161801A 512Kx36 1Mx18 1Mx18-Bit 165FBGA K7N1636 K7N161801A K7N163601A | |
D0-35
Abstract: K7J161882B K7J161882B-FC16 K7J161882B-FC20 K7J161882B-FC25 K7J163682B K7J163682B-FC16 K7J163682B-FC20 K7J163682B-FC25
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K7J163682B K7J161882B 512Kx36 1Mx18 512Kx36-bit, 1Mx18-bit 165FBGA D0-35 K7J161882B K7J161882B-FC16 K7J161882B-FC20 K7J161882B-FC25 K7J163682B K7J163682B-FC16 K7J163682B-FC20 K7J163682B-FC25 | |
Contextual Info: K7A163608A K7A163208A K7A161808A PRELIMINARY 512Kx36/x32 & 1Mx18 Synchronous SRAM Document Title 512Kx36/x32 & 1Mx18-Bit Synchronous Pipelined Burst SRAM Revision History Rev. No. 0.0 0.1 History Draft Date Remark 1. Initial draft 1. Add x32 org and industrial temperature |
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K7A163608A K7A163208A K7A161808A 512Kx36/x32 1Mx18 1Mx18-Bit | |
K7A161801M
Abstract: K7A163601M advh
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K7A163601M K7A161801M 512Kx36 1Mx18 1Mx18-Bit 117MHz 150mA 110mA 130mA K7A161801M K7A163601M advh | |
NC-2H
Abstract: K7B161825A K7B163225A K7B163625A
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K7B163625A K7B163225A K7B161825A 512Kx36/32 1Mx18 512Kx36/x32 1Mx18-Bit 165FBGA NC-2H K7B161825A K7B163225A K7B163625A | |
K7N161801A
Abstract: K7N163201A K7N163601A
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K7N163601A K7N163201A K7N161801A 512Kx36/32 1Mx18 1Mx18-Bit 165FBGA K7N1636 K7N161801A K7N163201A K7N163601A | |
K7A161801A
Abstract: K7A163201A K7A163601A
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K7A163601A K7A163201A K7A161801A 512Kx36/32 1Mx18 1Mx18-Bit K7A1636 K7A161801A K7A163201A K7A163601A | |
Contextual Info: K7I163684B K7I161884B 512Kx36 & 1Mx18 DDRII CIO b4 SRAM 18Mb DDRII SRAM Specification 165FBGA with Pb & Pb-Free RoHS compliant INFORMATION IN THIS DOCUMENT IS PROVIDED IN RELATION TO SAMSUNG PRODUCTS, AND IS SUBJECT TO CHANGE WITHOUT NOTICE. NOTHING IN THIS DOCUMENT SHALL BE CONSTRUED AS GRANTING ANY LICENSE, |
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K7I163684B K7I161884B 512Kx36 1Mx18 165FBGA 11x15 | |
K7B161825A
Abstract: K7B163625A
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K7B163625A K7B161825A 512Kx36 1Mx18 1Mx18-Bit 65V/-0 K7B161825A K7B163625A | |
Contextual Info: K7N163645A K7N163245A K7N161845A 512Kx36/32 & 1Mx18 Pipelined NtRAMTM Document Title 512Kx36/32 & 1Mx18-Bit Pipelined NtRAM TM Revision History History Draft Date Remark 1. Initial document. 1. Add JTAG Scan Order 1. Add x32 org and industrial temperature . |
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K7N163645A K7N163245A K7N161845A 512Kx36/32 1Mx18 1Mx18-Bit 165FBGA K7N1636 | |
Contextual Info: IS61QDP2B41M18A IS61QDP2B451236A 1Mx18 , 512Kx36 18Mb QUAD-P Burst 4 SYNCHRONOUS SRAM (2.0 Cycle Read Latency) FEATURES • 512Kx36 and 1Mx18 configuration available. On-chip delay-locked loop (DLL) for wide data valid |
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IS61QDP2B41M18A IS61QDP2B451236A 1Mx18 512Kx36 1Mx18 400MHz 333MHz 300MHz | |
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Contextual Info: IS61DDP2B21M18A IS61DDP2B251236A 1Mx18, 512Kx36 18Mb DDR-IIP Burst 2 CIO Synchronous SRAM (2.0 Cycle Read Latency) FEATURES • 512Kx36 and 1Mx18 configuration available. On-chip delay-locked loop (DLL) for wide data valid |
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IS61DDP2B21M18A IS61DDP2B251236A 1Mx18, 512Kx36 1Mx18 400MHz 333MHz 300MHz | |
Contextual Info: IS61QDP2B41M18A/A1/A2 IS61QDP2B451236A/A1/A2 1Mx18 , 512Kx36 18Mb QUADP Burst 4 SYNCHRONOUS SRAM (2.0 Cycle Read Latency) FEATURES • 512Kx36 and 1Mx18 configuration available. |
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IS61QDP2B41M18A/A1/A2 IS61QDP2B451236A/A1/A2 1Mx18 512Kx36 1Mx18 13x15 | |
Contextual Info: K7P163612M K7P161812M 512Kx36 & 1Mx18 SRAM Document Title 512Kx36 & 1Mx18 Synchronous Pipelined SRAM Register-Latch Revision History Rev. No. History Draft Date Remark Rev. 0.0 - Initial Document Aug. 2000 Advance Rev. 1.0 - V DDQ Min. changed to 1.4V - Package thermal characteristics added. |
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K7P163612M K7P161812M 512Kx36 1Mx18 27x16 | |
Contextual Info: K7A163601A K7A163201A K7A161801A 512Kx36/32 & 1Mx18 Synchronous SRAM Document Title 512Kx36/x32 & 1Mx18-Bit Synchronous Pipelined Burst SRAM Revision History Rev. No. History Draft Date Remark 0.0 0.1 0.2 Initial draft 1. Add x32 org and industrial temperature . |
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K7A163601A K7A163201A K7A161801A 512Kx36/32 1Mx18 512Kx36/x32 1Mx18-Bit K7A1636 | |
K7P161866M-HC30Contextual Info: K7P163666M K7P161866M 512Kx36 & 1Mx18 SRAM Document Title 512Kx36 & 1Mx18 Synchronous Pipelined SRAM Revision History Rev. No. History Draft Date Remark Rev. 0.0 - Initial Document Apr. 2000 Advance Rev. 0.1 - Leakage current test condition changed from VDD to VDDQ |
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K7P163666M K7P161866M 512Kx36 1Mx18 -HC30 -HC25 27x16 K7P161866M-HC30 | |
Contextual Info: K7P163666A K7P161866A Advance. 512Kx36 & 1Mx18 SRAM Document Title 512Kx36 & 1Mx18 Synchronous Pipelined SRAM Revision History Draft Date Remark - Initial Document Dec. 2001 Advance - Absolute maximum ratings are changed VDD : 2.815 - > 3.13 VDDQ : 2.815 - > 2.4 |
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K7P163666A K7P161866A 512Kx36 1Mx18 | |
IR 10D 8AContextual Info: K7I163684B K7I161884B K7I160884B Advance 512Kx36 & 1Mx18 & 2Mx8 DDRII CIO b4 SRAM Document Title 512Kx36-bit, 1Mx18-bit, 2Mx8-bit DDRII CIO b4 SRAM Revision History Rev. No. 0.0 History 1. Initial document. Draft Date Remark Dec. 16, 2002 Advance The attached data sheets are prepared and approved by SAMSUNG Electronics. SAMSUNG Electronics CO., LTD. reserve the right to change the |
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K7I163684B K7I161884B K7I160884B 512Kx36 1Mx18 512Kx36-bit, 1Mx18-bit, IR 10D 8A | |
Contextual Info: K7M163635B K7M161835B 512Kx36 & 1Mx18 Flow-Through NtRAMTM 18Mb NtRAMTM Specification 100TQFP/165FBGA with Pb/Pb-Free RoHS compliant INFORMATION IN THIS DOCUMENT IS PROVIDED IN RELATION TO SAMSUNG PRODUCTS, AND IS SUBJECT TO CHANGE WITHOUT NOTICE. NOTHING IN THIS DOCUMENT SHALL BE CONSTRUED AS GRANTING ANY LICENSE, |
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K7M163635B K7M161835B 512Kx36 1Mx18 100TQFP/165FBGA | |
Contextual Info: User Guide for QDRII as QDRI 18Mb QDRI 2Burst B-die Preliminary 512Kx36 & 1Mx18 QDR TM b2 SRAM Document Title 512Kx36-bit, 1Mx18-bit QDRTM SRAM Technical Note Revision History History Draft Date Remark 0.0 1. Initial document. April. 29, 2003 Advance 0.1 1. Delete the -20 speed bin part. |
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512Kx36 1Mx18 512Kx36-bit, 1Mx18-bit 11x15 | |
Contextual Info: K7Q163664B K7Q161864B 512Kx36 & 1Mx18 QDRTM b4 SRAM Document Title 512Kx36-bit, 1Mx18-bit QDRTM SRAM Revision History History Draft Date Remark 0.0 1. Initial document. Jan. 27, 2004 Advance 1.0 1. Final spec release Mar. 18, 2004 Final 1.1 1. Added the Part no. of Pb Free Package on page.2 |
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K7Q163664B K7Q161864B 512Kx36-bit, 1Mx18-bit 512Kx36 1Mx18 K7Q1636lid |