1N3070 Search Results

1N3070UR-1

Abstract: DO-213AA
Contextual Info: FEATURES 1N3070UR-1 • 1N3070UR-1 AVAILABLE IN JAN, JANTX, AND JANTXV PER MIL-PRF• • • • • 19500/169 SWITCHING DIODE METALLURGICALLY BONDED HERMETICALLY SEALED DOUBLE PLUG CONSTRUCTION ALSO AVAILABLE AS LL3070 MAXIMUM RATINGS AT 25 °C Operating Temperature:

DSAIH0002547

Contextual Info: B IC C I N T E R N A T I O N A L 3DE D • 1171143 0G00355 0 - ^ C S - O 0! BKC INTERNATIONAL ELECTRONICS, INC. 6 L A K E STREET, LAWRENCE, MA 01841 TEL. NO. 508 6 8 1 - 0 3 9 2 TYPE 1N3070 (SILICON) M A X I M U M RATI N G STORAGE TEMPERATURE: -¿>5C TO + 2 0 0 C

MMBD1502A

Abstract: 1N914 SOT-23 T0236 FOH300 MMBD1402 1n4148 LL34 1N3070 FOH300A 1N485B 1N486B
Contextual Info: hot a m bSDHBD D03TS07 423 NATL VRRM Irrm Volts Min Device 250 1N486B BAV21 1N3070 1N459 1N459A 1N485B 1N4938 1S923 BAS21 BAV20 FDH400 MMBD1401 MMBD1402 MMBD1403 MMBD1404 MMBD1405 MMBD1501A MMBD1502A MMBD1503A MMBD1504A MMBD1505A 1N3595 1N458A 1N6099 200

Contextual Info: 1N3070+JANTX Diodes General Purpose Fast Rectifier Military/High-RelY I O Max.(A) Output Current100m V(RRM)(V) Rep.Pk.Rev. Voltage200 t(rr) Max.(s) Rev.Rec. Time50n @I(F) (A) (Test Condition)30m @I(R) (A) (Test Condition)30m V(FM) Max.(V) Forward Voltage1.0

Contextual Info: 1N3070-1+JAN Diodes General Purpose Fast Rectifier Military/High-RelY I O Max.(A) Output Current100m V(RRM)(V) Rep.Pk.Rev. Voltage200 t(rr) Max.(s) Rev.Rec. Time50n @I(F) (A) (Test Condition)30m @I(R) (A) (Test Condition)30m V(FM) Max.(V) Forward Voltage1.0

1N4938

Abstract: FDH444 1N3070 1N462A 1N463A FDH400 High voltage diodes
Contextual Info: Switching Diodes High Voltage Diodes G lass Package V RRM D evice No. P ackage No. (V) (nA) Min Max @ V V F R (V) (V) @ 'f (m A) C ‘rr (PF) (ns) Te st C ond. P roce ss No. Max Max 1N3070 DO-35 200 100 175 1 100 5 50 (Note 1) 1J 1N4938 DO-35 200 100 175

Contextual Info: MICROSEMI CORP/ UATERTOlilN SDE COMPUTER DIODE T> m D01E3bQ 25G • U N I T 1N3070; JAN, JANTX 1N3070 1N4938; JAN, JANTX 1N4938 y y i v i r u I CIV U I K J U U . Switching ^ <r 9 i ABSOLUTE MAXIMUM RATINGS, AT 25°C Reverse Breakdown Voltage . 200V

IN3070

Abstract: 1N3070 IN3070 diode DIODE 1N3070
Contextual Info: 1N3070 COMPUTER DIODE High Voltage Switching FEATURES • Metallurgical Bond • Planar Passivated • High Voltage • DO-35 Package DESCRIPTION This series offers M etallurgical Bonding and is specifically designed for high voltage applications. ABSOLUTE MAXIMUM RATINGS, AT 25 °C

Contextual Info: FEATURES • 1N3070UR-1 AVAILABLE IN JAN, JANTX, AND JANTXV PER MIL-PRF- 1N3070UR- 1 • • • • • 19500/169 SWITCHING DIODE METALLURGICALLY BONDED HERMETICALLY SEALED DOUBLE PLUG CONSTRUCTION ALSO AVAILABLE AS LL3070 MAXIMUM RATINGS AT 25 °C Operating Temperature:

1N3070

Abstract: 1N3070 DIODE DATASHEET
Contextual Info: 1N3070 1N3070 DO-35 COLOR BAND DENOTES CATHODE Small Signal Diode Absolute Maximum Ratings * TA = 25°C unless otherwise noted Symbol VRRM Parameter Maximum Repetitive Reverse Voltage Value 200 Units V IF AV IFSM Average Rectified Forward Current 500 mA Non-repetitive Peak Forward Surge Current

cho bond 1029

Contextual Info: TYPE 1N3070 SILICON SWITCHING DIODE B U L L E T I N N O . DL-S 7 3 9 3 7 0 , N O V E M B E R 1 9 6 6 - R E V I S E D M A R C H 1 973 H IG H -V O L T A G E SW ITCH IN G D IO D E Rugged Double-Plug Construction Electrically Equivalent to 1N4938 DO-35 * m echanical d ata

1N4939

Abstract: 1N4938 1N3070 1N4938 JANTX
Contextual Info: COMPUTER DIODE 1N3070; JAN, JANTX 1N3070 1N4938; JAN, JANTX 1N4938 Switching ABSOLUTE MAXIMUM RATINGS, AT 25«C FEATURES Reverse Breakdown Voltage . 2 0 0 V Steady-State Forward Current at or below 25°C Free Air T em p era tu re.1 5 0 m A

1N3070

Abstract: DIODE 1N3070
Contextual Info: 1N3070 High Speed High Conductance Diode. Working Inverse Voltage 175 V. 1.35 Dio. Page 1 of 1 Enter Your Part # Home Part Number: 1N3070 Online Store 1N3070 Diodes High Speed High Conductance D iode. Working Inverse Transistors Voltage 175 V. Integrated Circuits

1N3070

Contextual Info: ALLEGRO MICROSYSTEMS INC T3 ]> 05D433A 0DG37T1 3 • T -9 1 -0 1 PROCESS TSO Process TSO High-Speed Switching Diode P ro ce ss T S O produces a gold-doped silicon epi­ taxial diode with 1N3070 high-speed sw itching char­ acteristics. It has a typical breakdow n-voltage rating

Contextual Info: 1N3070-1+JANTX Diodes General Purpose Fast Rectifier Military/High-RelY I O Max.(A) Output Current100m V(RRM)(V) Rep.Pk.Rev. Voltage200 t(rr) Max.(s) Rev.Rec. Time50n @I(F) (A) (Test Condition)30m @I(R) (A) (Test Condition)30m V(FM) Max.(V) Forward Voltage1.0

Contextual Info: 1N3070+JAN Diodes General Purpose Fast Rectifier Military/High-RelY I O Max.(A) Output Current100m V(RRM)(V) Rep.Pk.Rev. Voltage200 t(rr) Max.(s) Rev.Rec. Time50n @I(F) (A) (Test Condition)30m @I(R) (A) (Test Condition)30m V(FM) Max.(V) Forward Voltage1.0

Contextual Info: Switching Diodes High Voltage Diodes v Device No. Package No. Glass Package *R R M •r (V) (nA) Min Max V F @ V R (V) (V) Min @ Max 'f (mA) c *n (pF) (ns) Max Max Test Cond. Process No. 1N3070 DO-35 200 100 175 1 100 5 50 (Note 1) 1J 1N4938 DO-35 200 100

DO-41

Abstract: DO41 fairchild 1n3600 DIODE 1N4001 FDC3600 1N3070 1N3600 1N4002 1N4376 1N485B
Contextual Info: FAIRCHILD DIODES/RECTIFIERS DIODES DIODE DICE BY DESCENDING BV C Basic BV >R Vr V f If -Ir •f *rr V @ mA ns @ mA DEVICE Standard V nA @ V pF Max Max Typ Item NO. Device Min Max 1 FDC3070 1N3070 200 100 175 1.0 100 50 10 2.5 100 500 Chip Size Mils Basic

Contextual Info: FEATURES 1N3070- 1 • 1N3070-1 AVAILABLE IN JAN, JANTX, AND JANTXV PER MIL-PRF• • • • 19500/169 SWITCHING DIODE METALLURGICALLY BONDED HERMETICALLY SEALED DOUBLE PLUG CONSTRUCTION MAXIMUM RATINGS AT 25 °C Operating Temperature: Storage Temperature:

DIODE 1N3070

Abstract: 1N3070 high voltage diode 1N3070 DIODE 1N3070 DIODE DATASHEET MMBD1401
Contextual Info: 1N3070 1N3070 DO-35 General Purpose High Voltage Diode Sourced from Process 1J. See MMBD1401 for characteristics. Absolute Maximum Ratings* Symbol TA = 25°C unless otherwise noted Parameter Value Units W IV Working Inverse Voltage 200 V IO Average Rectified Current

jx4938

Abstract: 1N3070 1N3070 JANTX J493 1N4938 1N4938-1 1N4938UR-1 DO-213AA 1N3070-1 1N3070UR-1
Contextual Info: The documentation and process conversion measures necessary to comply with this revision shall be completed by 4 February 2010. INCH-POUND MIL-PRF-19500/169N 2 NOVEMBER 2009 SUPERSEDING MIL-PRF-19500/169M 10 APRIL 2008 PERFORMANCE SPECIFICATION SHEET SEMICONDUCTOR DEVICE, DIODE, SILICON, SWITCHING,TYPES 1N3070, 1N3070-1,

DIODE 1N3070

Abstract: 1N307 1N3070 JANTX 1N3070-1
Contextual Info: FEATURES 1N3070-1 • 1N3070-1 AVAILABLE IN JAN, JANTX, AND JANTXV PER MIL-PRF• • • • 19500/169 SWITCHING DIODE METALLURGICALLY BONDED HERMETICALLY SEALED DOUBLE PLUG CONSTRUCTION MAXIMUM RATINGS AT 25 °C Operating Temperature: Storage Temperature:

SMD Transistors w04 sot-23

Abstract: transistor SOT-23 w04 SB050 transistor IN4728A mosfet SMD w04 SN30SC4 smd diode code gs1m W01 SMD mosfet W04 sot 23 1s355
Contextual Info: RETURN TO PRODUCT CATALOG TABLE OF CONTENTS RETURN TO PRODUCT CATALOG INDEX RETURN TO DIODES INC. NEW PRODUCTS PAGE Product Catalog Diodes Incorporated 3050 E. Hillcrest Drive Westlake Village, CA 91362-3154 2000/2001 Specifications are subject to change without notice.

CMOD2004

Abstract: CPD80V CMDD2004 1N3070 CMLD2004 CMPD2003 CMPD2004 CMSD2004 CMXD2004
Contextual Info: PROCESS CPD80V Switching Diode High Voltage Switching Diode Chip PROCESS DETAILS Process EPITAXIAL PLANAR Die Size 16 x 16 MILS Die Thickness 7.1 MILS Anode Bonding Pad Area 6.5 x 6.5 MILS Top Side Metalization Al - 30,000Å Back Side Metalization Au.As - 13,000Å