1N3174 Search Results

Contextual Info: 1N3174+JAN Diodes Silicon Rectifier Military/High-RelY I O Max.(A) Output Current240 @Temp (øC) (Test Condition)105# V(RRM)(V) Rep.Pk.Rev. Voltage1.0k I(FSM) Max.(A) Pk.Fwd.Sur.Cur.3.0k V(FM) Max.(V) Forward Voltage1.9 @I(FM) (A) (Test Condition)240 @Temp. (øC) (Test Condition)105#

Contextual Info: Military Silicon Power Rectifier 1N3164 - 1N3174 Dim. Inches Minimum A B C D F G H J K M N R Notes: 1. Full threads within 2 1 /2 threads. 2. Standard Polarity: Stud is Cathode Reverse Polarity: Stud is Anode -.660 .338 .665 .125 - Maximum Minimum UNF

1N3164

Abstract: ln317 1N3164R 1N3168 1N3168R 1N3170 1N3170R 1N3172 1N3172R 1N3174
Contextual Info: Military Sil icon Power Rectifier 1N31 1N31 7 AI- ^ Dim. Inches Minimum A B C D F G H J K M N R Notes: 1. Full threads within 2 1 /2 threads. 2. Standard Polarity: Stud is Cathode Reverse Polarity: Stud is Anode Reverse 1N3164 1N3168 1N3170 1N3172 1N3174 1N3164R

IC HXJ 2038

Abstract: 1N52398 DB5T tfk 102 cny 70 hxj 2038 rca 40361 transistor rca 40362 TFK 680 CNY 70 Diode Equivalent 1N34A 2n5952 equivalent
Contextual Info: The Engineering Staff of TEXAS INSTRUMENTS INCORPORATED Components Group The T ransistor and Diode Data Book for Design Engineers T e x a s In s t r u m e n t s IN CO RPO RATED TYPE NUMBER INDEX GLOSSARY TRANSISTOR SELECTION GUIDES TRANSISTOR INTERCHANGEABILITY

D0205AB

Abstract: ln317 1N317 1N3161 1N3162 1N3163 1N3164 1N3165 1N3166 1N3167
Contextual Info: Silicon Power Rectifier 1N3161 1N3177 Dim. In ch e s Minimum A B C D F G H J K M N R Notes: 1. Full threads within 2 1/2 threads. 2. Standard Polarity: Stud is Cathode Reverse Polarity: Stud is Anode Millim eter Maxim um Minimum 3 / 4 -1 6 1.218 1.350 5.30

1N3162

Abstract: D0205AB n316 1N3161 1N3163 1N3164 1N3165 1N3166 1N3167 1N3168
Contextual Info: —I MI— Dim. Inches Minimum A B C D F G H J K M N R Notes: 1. Full threads within 2 1/2 threads. 2. Standard Polarity: Stud is Cathode Reverse Polarity: Stud is Anode Maximum Minimum 3 /4 -1 6 1.218 1.350 5.30 .793 .300 - .660 .338 .665 .125 - UNF

EATON CM20A

Abstract: A5 GNE mosfet Hall sensor 44e 402 2N8491 FTG 1087 S TRIAC BCR 10km FEB3T smd transistor marking 352a sharp EIA 577 sharp color tv schematic diagram MP-130 M mh-ce 10268
Contextual Info: Table of Contents N E W A R K E L E C T R O N IC S “Where serving you begins even before you call” Newark Electronics is a UNIQUE broadline distributor of electronic components, dedicated to provid­ ing complete service, fast delivery and in-depth inventory. Our main

1h31

Abstract: 5961 b sj IN3164 1N3164 1N3168 1N3170 1N3172 1N3174 1N3176 1N3177
Contextual Info: MIL SPECS IC| GOODIES 00023^10 | MI L - S -19 b 0 0 / 2 1 1 r5 AMEv',-'7lfT ? 23 Fubrii^-v i3S5 SUPERS-L^C AMENDM^'-T 2 October MILITARY 2 i9 3 , SPECIFICATION S E M I C O N D U C T O R DE VICE, DIODE, S IL ICO N, POWER RE C T I F I E R T Y P E S 1 N 3 1 6 4 , 1 N 3 1 6 8 , IN 31 7 0 , 1 N 3 1 7 2 , 1 N 3 1 7 4 , 1 N 3 1 7 5 ,

jantx1N3295

Abstract: 19500 jantx1n6391 JAN1N3289R M65S JANTXV1N JANTX1N3289 1N3289 1N6391 JAN1N6391
Contextual Info: INTERNATIONAL RECTIFIER 5bE II • T~03-0/ 485S4S2 0010180 & ■ Government/ Space Products International SRectifier Rectifiers, MIL-Qualified Schottky Rectifiers Part Numbers JE D E C 1N6391 1N6392 JA N JAN1N6391 JAN1N6392 JA N T X JANTX1N6391 JANTX1N6392

diode equivalent

Abstract: JANTX1N3293
Contextual Info: IO R Government/ Space Products Diode, JAN Equivalent Diode, JAN Equivalent Diode 150 Amps P u t H um bert IR 80-1243 80-1243R Industrial Currant Rating A M ilitary Current Rating (A) Com pliant to M IL-8-19S00 Q ualification 150 150 /246 19000-410-84 150

1N3161

Abstract: 1N3162 1N3163 1N3164 1N3165 1N3166 1N3167 1N3168 1N3177 4802S
Contextual Info: Silicon Power Rectifier 1N3177 1N3161 Dim. Inches Minimum A B C D F G H J K M N R Notes: 1. Full threads within 2 1 /2 threads. 2. Standard Polarity: Stud is Cathode Reverse Polarity: Stud is Anode M illim e te r Maximum Minimum 3 /4 -1 6 1.218 1.350 5.30

FED-STD-H28

Abstract: 1N3164 1N3164 JANTX 1N3164R 1N3168 1N3168R 1N3170 1N3170R 1N3172 1N3172R
Contextual Info: TECHNICAL DATA SHEET 6 Lake Street, Lawrence, MA 01841 1-800-446-1158 / 978 620-2600 / Fax: (978) 689-0803 Website: http://www.microsemi.com HIGH RELIABILITY SILICON POWER RECTIFIER Qualified per MIL-PRF-19500/211 • Glass Passivated Die • Rugged Construction

LE79Q2281

Abstract: 1N6761-1 2N2369AU 2N2907AUB BR17 datasheet transistor SI 6822 Dimming LED aplications Dimming LED Driver aplications GC4600 IC ZL70572
Contextual Info: Product Portfolio 2013-2014 ng-edge Embed Power Matters. About Microsemi Microsemi Corporation is a leading provider of semiconductor solutions differentiated by power, security, reliability and performance. The company concentrates on providing solutions for applications where power matters, security

D0205AB

Abstract: 1N3164 1N3164R 1N3168 1N3168R 1N3170 1N3170R 1N3172 1N3172R 1N3174
Contextual Info: tary Silicon Power Rectifier a N3164 N3174 Dim. Inches M inim um A B C D F G H J K M N R Notes: 1. Full threads within 2 1 /2 threads. 2. Standard Polarity: Stud is Cathode Reverse Polarity: Stud is Anode -.660 .338 .665 .125 - UNF 1.250 1.375 5.90

JAN1N3289R

Abstract: JANTXV1N3291 1N6392 JANTX JANTX1N3168 JAN1N3164
Contextual Info: International S Rectifier Government/ Space Products Rectifiers, MIL-Qualified p S chottky Rectifiers Part Numbers JE D E C JA N JA N T X Voltage JA N T X V V Indttstrial Military Current Current Rating Rating (A) (A) Outline MIL-S-19500 Qualification Number

MC2259

Abstract: MC880P MC9713P mc2257 1N4003 germanium diode specification 2N1256 S P 1N4465 MC9802P MC9718P 3N214
Contextual Info: Semiconductor Data Library Master Index prepared by Technical Information Center The information in this book has been carefully checked and is believed to be reliable; however, no responsibility is assumed for inaccuracies. Furthermore, this information does not convey to the

RCA SK CROSS-REFERENCE

Abstract: CD4003 2N2505 TF408 1N4465 250PA120 2N3017 pt 3570 trw rf pa189 Semicon volume 1
Contextual Info: 1969 o < 00 x ic e uo <r\ *—4 rO O CM u J 'r < o o o CO r aJ. rfrr.~> y -< z X— < P“ -J Sem iconductor Annual At .0008" Dia. . . . there is no second source phire orifice insert. Tempress also created and supplied the tungsten carbide ultrasonic bonding tool and pioneered

Contextual Info: Standard Recovery Rectifiers Micmsemi I Part N u m b e r M ic ro s e m i Package D iv is io n O u tlin e Type Mil Data IO VR IFSM V F @ IO IR trr Spec S h e e t lD Am ps (Volts) (A m ps) (Volte) (uA) (nsec) 1956 160 -957 160 1958 160 300 350 400 500 600

transistor c2060

Abstract: Transistor Shortform Datasheet & Cross References 1N4465 C1906 transistor Germanium itt 3N58 IN939 MC1230F 2N3866 MOTOROLA C943 transistor
Contextual Info: Data Book Updating Service I Table of Contents How to Use the Data Book I > INTRODUCTION Complete I N . . . INDEX numerical index o f all ElA-registered device types, with major electrical specifications 2N . . . & 3N . . . INDEX Complete numerical index of all ElA-registered device types,

Contextual Info: Sil icon Power Rectifier N 31 N 3 '161 —\ M [— 7 7 Dim. Inches Minimum A B C D F G H J K M N R Notes: 1. Full threads within 2 1 /2 threads. 2. Standard Polarity: Stud is Cathode Reverse Polarity: Stud is Anode M illim e te r Maximum Minimum 3 /4 - 1 6

1N3168

Abstract: 1N3164 1N3170 1N3172 1N3174 1N3175 1N3176 1N3177 211C
Contextual Info: INCH-POUND The documentation and process conversion measures necessary to comply with this revision shall be completed by 10 March 2010. MIL-PRF-19500/211C 10 December 2009 SUPERSEDING MIL-PRF-19500/211B 18 May 1983 * PERFORMANCE SPECIFICATION SHEET SEMICONDUCTOR DEVICE, DIODE, SILICON, POWER RECTIFIER,

thyristor TAG 8506

Abstract: nais inverter vf 7f operation manual 922AA1Y-A4P optek A400 817 Sprague 513D sprague 926c Sprague 195P Rapa relay 12vdc triac tag 8948 Mascot 719
Contextual Info: TABLE OF CONTENTS Catalog Number 11Q New For 1989! • Over 7,900 New Products • 13 New M anufacturers PRODUCT INDICES tiamp*,'fminei forskSockets ' Solder Equipment endTtfob ] vriHp\< lint Equipment, Panel Meters, Aejulpmant, i A P R E M IE R C o m p an y

Contextual Info: INCH-POUND The documentation and process conversion measures necessary to comply with this revision shall be completed by 20 October 2012. MIL-PRF-19500/211D 20 July 2012 SUPERSEDING MIL-PRF-19500/211C 10 December 2009 PERFORMANCE SPECIFICATION SHEET SEMICONDUCTOR DEVICE, DIODE, SILICON, POWER RECTIFIER,

IN4054R

Abstract: IN4048R IN4045 1N2131 IN3294 B 1186a 1N1202 1N1201 IN4056R IN4048
Contextual Info: S E M IC O N D U C T O R S IN C CHE D f fil3 b tiS 0 Q DO DSbB 0 | Silicon Power Rectifiers 6 AMP - D04 Peak Reverse Voltage JEDEC Numbers 1N1341, 1N1612, 1N1342, 1N1613, 1N1341A, 1N1341B, 1N1581, 1N2228, 1N2491 1N1342A, 1N1342B, 1N1582, 1N2492 1N1343, 1N1343A, 1N1343B