1N3600 Search Results

1n3600

Abstract: 1N4150 1n3600 chip
Contextual Info: P O M P I JTFR DIODF W I T ,r u 1 L/IV7t/U 200rnA Low Power, Switching 1N3600; JAN, JANTX & JANTXV I N 3600 1N4150; JAN, JANTX & JANTXV 1N4150 JAN, JANTX & JANTXV 1N4150-1 FEATURES DESCRIPTION • • • • This series of switching diodes is useful in many computer sw itching applications, for

Contextual Info: Silicon Switching Diodes 1N4150, 1N4150-1 & 1N3600 Features • Available in JAN, JANTX, and JANTXV per MIL-PRF-19500/231 • Metallurgically Bonded • Hermetically Sealed • Double Plug Construction Maximum Ratings Operating & Storage Temperature: -65°C to +175°C

1N3600

Abstract: 1N4150 1N4150-1 JTXV1N3600
Contextual Info: COMPUTER DIODE JAN, JANTX & JANTXV 1N3600 JAN, JANTX & JANTXV 1N4150 JAN, JANTX & JANTXV 1N4150-1 200mA Low Power, Switching FEATURES DESCRIPTION • • • • • This series of switching diodes is useful in many computer sw itching applications, for both m ilitary and comm ercial systems.

FH1100

Abstract: diode do7-15 1N4148-1JANTXV 1N4148-1JANTX 1N4148-1 JAN 1N3600JANTXV 1N4148-1 1N4148JAN 1N4148JANTX 1N4148JANTXV
Contextual Info: FAIRCHILD DIODES DIODES MILITARY QUALIFIED SMALL SIGNAL DIODES NUMERIC LISTING GLASS PACKAGE Item DEVICE NO. BV V Min •r nA Max Vr V @ Vf V Max @ If mA (Confd) c trr pF Max ns Max Package No. 1 1N3600JANTXV 75 100 50 1.0 200 2.5 4.0 DO-7 2 1N4148JAN 100

in3600

Abstract: IN4150 1N3600 MIL-PRF-19500/231 1N4150 1N4150-1 D0-35
Contextual Info: • 1N4150-1 AVAILABLE IN JAN, JANTX, AND JANTXV PER MIL-PRF-19500/231 • 1N3600 AVAILABLE IN JAN, JANTX, AND JANTXV PER MIL-PRF-19500/231 • SWITCHING DIODES • HERMETICALLY SEALED • METALLURGICALLY BONDED 1N4150 and 1N4150-1 and 1N3600 • DOUBLE PLUG CONSTRUCTION

Diode 1N4150

Abstract: BY100 JR100 marking 1n3 diode R-1 ROHM 1N3600
Contextual Info: • DOOfiTbD 2bl ■ R H M ROHVn 1N4150/1N3600 DIODE ROHM STANDARD ABSOLUTE MAXIMUM RATINGS: Ta=25’C Peak Reverse Voltage Reverse Voltage DC Peak Forward Current Forward Current DC Peak Forward Surge Current Total Power Dissipation Junction Temperature

Contextual Info: Silicon Switching Diodes 1N4150UR, 1N4150UR-1 & 1N3600UR Features • Available in JAN, JANTX, and JANTXV per MIL-PRF-19500/231 • Metallurgically Bonded • Hermetically Sealed • Double Plug Construction Maximum Ratings Operating & Storage Temperature: -65 °C to +175 °C

JANS1N4150-1

Abstract: JX4150 1N4150UB JANS1N6640US J4150 JV4150 JX-41 diode MARKING CODE jx JANS1N6640 1N4150-1
Contextual Info: INCH-POUND MIL-PRF-19500/231M w/AMENDMENT 2 16 July 2010 SUPERSEDING MIL-PRF-19500/231M w/AMENDMENT 1 25 January 2010 SEMICONDUCTOR DEVICE, DIODE, SILICON, SWITCHING, TYPES 1N4150-1, 1N4150UR-1, 1N4150UB, 1N4150UBCA, 1N4150UBCC, 1N4150UBD, AND 1N3600, JAN, JANTX, AND JANTXV

MIL-PRF-19500/231

Abstract: 1N3600
Contextual Info: FEATURES 1N3600 • • • • • 1N3600 AVAILABLE IN JAN, JANTX, AND JANTXV PER MIL-PRF-19500/231 SWITCHING DIODE METALLURGICALLY BONDED HERMETICALLY SEALED DOUBLE PLUG CONSTRUCTION MAXIMUM RATINGS AT 25 °C Operating Temperature: Storage Temperature: Surge Current A, sine 1uS:

Contextual Info: • 1N4150UR-1 AVAILABLE IN JAN, 1N4150UR-1 1N3600UR CDLL4150 CDLL3600 JANTX, AND JANTXV PER MIL-PRF-19500/231 • SWITCHING DIODE • HERMETICALLY SEALED • METALLURGICALLY BONDED • DOUBLE PLUG CONSTRUCTION MAXIMUM RATINGS M -' Junction Temperature: -65°C to +175°C

1N3600

Abstract: you lost me
Contextual Info: 1N3600 High conductance ultra fast diode. Working inverse voltage 50 V. 2.76 Diodes H. Page 1 of 1 Enter Your Part # Home Part Number: 1N3600 Online Store 1N3600 Diodes High Transistors conductance ultra fast diode. Working voltage 50 V. Integrated Circuits

ALL4150

Abstract: 1N4606
Contextual Info: AMERICAN POWER DEVICES S3E D -7~02>-O ? 0737135 00000S3 0 • P L A N A R DIODES Type 1N456 1N456A 1N457 1N457A 1N458 1N458A 1N458B 1N619 1N890 1N914 1N3062 1N3064 1N3147 1N3600 1N3602 1N3605 1N4009 1N4148 1N4149 1N4150 Peak Minimum Inverse Forward Voltage Current

GE 7252

Abstract: JANTXV1N4532 JAN1N4153-1 JANTX1N4150-1
Contextual Info: Signal/General Purpose Diodes PartNum ber SIG JANTXV1N4532 1N4153 JAN1N4153 JAN1N4153-1 JAN1N4153-1 JANTX1N4153 JANTX1N4153-1 JANTX1N4153-1 JANTX1N4153UR-1 JANTXV1N4153 JANTXV1N4153-1 JANTXV1N4153-1 JANTXV1N4153UR-1 1N4154 BAV70 BAW5S 1N3600 1N4151 MLL4150-1

diode 1N4001 specifications

Abstract: 1N4001 general diode purpose Diode Array 1N4448 THD4001 1N4610 1N914/1N4148 THD-4148 THD4004 1N4376 THD22Q
Contextual Info: ALLECRO MICROSYSTEMS INC bbE » • 0S0N33Í 000bS2b £10 BA LG R ELECTRICAL CHARACTERISTICS at TA = + 25°C Device Type Type Max. Description mA v (BR) Min. (V) vF Coo> 'r *rr Max. Max. @ IF Max. Max. (V) (mA) (nA) (ns) (PF) Geometry 1N3600 THD3600 General Purpose

Contextual Info: • 1N4150UR-1 AVAILABLE INJAN, PER MIL-PRF-19500/231 1N4150UR-1 1N3600UR CDLL4150 CDLL3600 JANTX, AND JANTXV • SWITCHING DIODE • HERMETICALLY SEALED • METALLURGICALLY BONDED • DOUBLE PLUG CONSTRUCTION MAXIMUM RATINGS Junction Temperature: -65°C to +175°C

Contextual Info: Silicon Switching Diodes 1N4150UR, 1N4150UR-1 & 1N3600UR Features • Available in JAN, JANTX, and JANTXV per MIL-PRF-19500/231 • Metallurgically Bonded • Hermetically Sealed • Double Plug Construction Maximum Ratings Operating & Storage Temperature: -65 °C to +175 °C

MIL-PRF-19500/231

Abstract: 1N4150 metallurgically aeroflex JANTX 1N4150-1 1N3600 1N4150 1N4150-1 1N4151 JANTX 1N4150
Contextual Info: Silicon Switching Diodes 1N4150, 1N4150-1 & 1N3600 Features • Available in JAN, JANTX, and JANTXV per MIL-PRF-19500/231 • Metallurgically Bonded • Hermetically Sealed • Double Plug Construction Maximum Ratings Operating & Storage Temperature: -65°C to +175°C

1N4150UR AEROFLEX

Abstract: DO-213AA 1N3600UR 1N4150UR-1 LL34 1N4150UR1 JANTX
Contextual Info: Silicon Switching Diodes 1N4150UR, 1N4150UR-1 & 1N3600UR Features • Available in JAN, JANTX, and JANTXV per MIL-PRF-19500/231 • Metallurgically Bonded • Hermetically Sealed • Double Plug Construction Maximum Ratings Operating & Storage Temperature: -65 °C to +175 °C

Contextual Info: DIGITRON SEMICONDUCTORS 1N3600, 1N4150 SWITCHING RECTIFIER MAXIMUM RATINGS @ 25°C Operating junction and storage temperature range -65° to 175°C Operating current 300mA @ TA = 25°C Derating current 2.0mA dc/°C above TL = 75°C @ L = 3/8” Forward surge current

in3600

Contextual Info: • 1N4150-1 AVAILABLE IN JAN, JANTX, AND JANTXV PER MIL-PRF-19500/231 • 1N3600 AVAILABLE IN JAN, JANTX, AND JANTXV PER MIL-PRF-19500/231 1N4150 and 1N4150-1 and 1N3600 •SWITCHING DIODES • HERMETICALLY SEALED • METALLURGICALLY BONDED . DOUBLE PLUG CONSTRUCTION

Switching

Abstract: 1N3065 1n914 equivalent 1N3605 1N4151 equivalent 1N3062 1N4153 silicon diodes 1N4863 datasheets diode 1n3064 1N3063
Contextual Info: Silicon Diodes DO-35 Case Switching Diodes TYPE NO. 1N914 1N914B 1N3062 1N3063 1N3064 1N3065 1N3600 1N3604 1N3605 1N4148 1N4150 1N4151 1N4152 1N4153 1N4154 1N4444 1N4446 1N4447 1N4448 1N4449 1N4454 1N4863 1N4864 VRRM V MAX 100 100 75 75 75 75 50 40 75 100

DO-35 PACKAGE

Abstract: DSAIH000251
Contextual Info: B K C INTERNATIONAL 3 Silicon Switching !Diodes for Computer Applications in DO-35 Package I Type BAW75 BAW76 BKC600 BKC666 BKC900 BKC999 1N625 1N914 1N914A 1N914B 1N916 1N916A 1N916B 1N3064 1N3600 1N4009 1N4148 1N4149 1N4150 1N4151 1N4152 1N4153 1N41S4 1N4446

MIL-PRF-19500/231

Abstract: 1N3600UR 1N4150UR-1 CDLL3600 CDLL4150 DO-213AA LL34 IN4150 in3600
Contextual Info: • 1N4150UR-1 AVAILABLE IN JAN, PER MIL-PRF-19500/231 1N4150UR-1 1N3600UR CDLL4150 CDLL3600 JANTX, AND JANTXV • SWITCHING DIODE • HERMETICALLY SEALED • METALLURGICALLY BONDED • DOUBLE PLUG CONSTRUCTION MAXIMUM RATINGS Junction Temperature: -65°C to +175°C

Contextual Info: n O M P U T F P niOHF ; ; nm r u 1 L“rv 200m A Low Power, Switching I N 3600; JAN, JAN TX & JANTXV 1N3600 1N4150; JAN, JAN TX & JANTXV 1N4150 JAN, JANTX & JANTXV 1N4150-1 FEATURES DESCRIPTION • • • • T h is series of sw itching d iodes is useful in