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MicroWave Technology Inc 1N416E
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Bristol Electronics	1N416E		1			1 - 10 - 100 - 1000 - 10000 -	Get Quote
Quest Components	1N416E		4			1 $200 10 $180 100 $180 1000 $180 10000 $180	Buy Now
	1N416E		1			1 $225 10 $225 100 $225 1000 $225 10000 $225	Buy Now
NTE Electronics Inc 1N416E MIXER DIODE, 450OHM Z(V) MAX, 7DB NOISE FIGURE, SILICON
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Quest Components	1N416E		2			1 $130 10 $130 100 $130 1000 $130 10000 $130	Buy Now
OSRAM SYLVANIA 1N416E MIXER DIODE, 450OHM Z(V) MAX, 7DB NOISE FIGURE, SILICON
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Quest Components	1N416E		1			1 $226.8772 10 $226.8772 100 $226.8772 1000 $226.8772 10000 $226.8772	Buy Now

1N416E Datasheets (19)

Part	Manufacturer	Description	Datasheet Type	PDF
1N416E	MicroMetrics	S - x Band Point Contact Mixer Diode	Original	PDF
1N416E	MicroMetrics	S - X Band Point Contact Mixer Diodes	Original	PDF
1N416E	BKC International	Silicon Point Contact Mixer Diodes	Scan	PDF
1N416E	ECG Semiconductors	Diodes and Rectifiers / Voltage Controller	Scan	PDF
1N416E	ECG Semiconductors	Microwave Mixer Diodes / Pin Diodes	Scan	PDF
1N416E	ECG Semiconductors	ECG Semiconductors Datasheet	Scan	PDF
1N416E	ECG Semiconductors	ECG Semiconductors Datasheet	Scan	PDF
1N416E	Motorola	Motorola Semiconductor Datasheet Library	Scan	PDF
1N416E	Unknown	Historical semiconductor price guide (US$ - 1998). From our catalog scanning project.	Historical	PDF
1N416E	Unknown	Shortform IC and Component Datasheets (Plus Cross Reference Data)	Short Form	PDF
1N416E	Unknown	Shortform Semicon, Diode, and SCR Datasheets	Short Form	PDF
1N416E	Philips ECG	Diodes and Rectifiers (General Purpose)	Scan	PDF
1N416EM	MicroMetrics	RF Mixer Diode, PN Mixer, UHF\|SHF, Case Style	Original	PDF
1N416EM	Advanced Semiconductor	Silicon Point Contact Mixer Diodes	Scan	PDF

1N416EM	Unknown	Historical semiconductor price guide (US$ - 1998). From our catalog scanning project.	Historical	PDF
1N416EMR	MicroMetrics	RF Mixer Diode, PN Mixer, UHF\|SHF, Case Style	Original	PDF
1N416EMR	Advanced Semiconductor	Silicon Point Contact Mixer Diodes	Scan	PDF
1N416EMR	Unknown	Historical semiconductor price guide (US$ - 1998). From our catalog scanning project.	Historical	PDF
1N416ER	MicroMetrics	RF Mixer Diode, PN Mixer, UHF\|SHF, Case Style	Original	PDF

1N416E Datasheets Context Search

Catalog Datasheet	MFG & Type	PDF	Document Tags
1N416E Abstract: DO-23 Text: 1N416E General Purpose UHF/MW Mixer Diode 98.98 Diodes UHF/Microwave Mixer . Page 1 of 1 Enter Your Part # Home Part Number: 1N416E Online Store 1N416E Diodes General Purpose UH F/MW Mixer Diode Transistors Enter code INTER3 at checkout.* Integrated Circuits	Original	PDF	1N416E 1N416E DO-23 com/1n416e
1N23 diode Abstract: 1N23C 1N23B 1N21C 1N23A case cs101 1N415C diode 1N23WG 1N415H CS100 Text: Point Contact Diodes Point Contact Diodes: 1N Series S - X Band Point Contact Mixer Diodes Description This MicroMetrics 1N series of Point Contact Mixer diodes is designed for applications from S-Band through XBand. Each device in this series is in a cartridge package specially designed	Original	PDF	CS100 CS101 1N23 diode 1N23C 1N23B 1N21C 1N23A case cs101 1N415C diode 1N23WG 1N415H CS100
1N416 Abstract: No abstract text available Text: HOME \| CATALOG \| CART \|EXPRESS CHECKOUT \| PARTS WATCH \| NEW ITEMS \|RFQ\| l l Enter Your Part # Home Online Store ¡ Diode s ¡ Transistors ¡ Inte grate d C ircuits ¡ O ptoe le ctronics ¡ Thyristors l Products ¡ Se arch for Parts ¡ R e que st a Q uote ¡ Te st House s	Original	PDF	1N416E DO-23 1N416
c5088 transistor Abstract: transistor C3207 TLO84CN sec c5088 IN5355B D2817A C3207 transistor toshiba f630 TLO81CP MC74HC533N Text: Transistor - Diode Cross Reference - H.P. Part Numbers to JEDEC Numbers Part Num. 1820-0225 1820-0240 1820-0352 1820-1804 1821-0001 1821-0002 1821-0006 1850-0062 1850-0064 1850-0075 1850-0076 1850-0093 1850-0099 1850-0126 1850-0137 1850-0150 1850-0151 1850-0154	Original	PDF	1853IMPATT c5088 transistor transistor C3207 TLO84CN sec c5088 IN5355B D2817A C3207 transistor toshiba f630 TLO81CP MC74HC533N
CS100 Abstract: cs-100 1N415C 1N23 diode 1N23B 1N23 1N21E 1N416C cs-101 1N21C Text: Point Contact Diodes: 1N Series S - X Band Point Contact Mixer Diodes Description This MicroMetrics 1N series of Point Contact Mixer diodes is designed for applications from S-Band through XBand. Each device in this series is in a cartridge package specially designed	Original	PDF	CS100 CS101 CS100 cs-100 1N415C 1N23 diode 1N23B 1N23 1N21E 1N416C cs-101 1N21C
ecg rectifier diode Abstract: ECG 558 ECG diodes diode ecg 588 ECG555A 110MP Text: Microwave Mixer Diodes Type No. Test Freq. MHz Noise Figure (dB) I.F. IMPED. 0 3 0 MHz (Ohms) VSWR Max. Ratio Burn Out (ERGS) Fig. No. 1N415C 9375 9.5 325-475 1.5 2.0 Z64 1N415E 9375 7.5 335-465 1.3 2.0 Z64 1N416C 3060 8.3 300-700 . 2.0 Z64 1N416E 3060	OCR Scan	PDF	1N415C 1N415E 1N416C 1N416E ECG553 ECG566A ECG571 ECG616A Z13-2 DO-92 ecg rectifier diode ECG 558 ECG diodes diode ecg 588 ECG555A 110MP
CI 3060 elsys Abstract: mav55 ECG592 1N416C microwave diode ecg 588 ci 3060 DIODE Z54 Z11A 1N415C diode Z6 DIODE Text: M icrowave Mixer Diodes Type No. Test Freq. MHz Noise Figure (dB) I.F. IM PED. Q 30 MHz (Ohms) VSW R Max. Ratio Burn Out (ERGS) Fig. No. 1N415C 9375 9.5 325-475 1.5 2.0 Z64 1N415E 9375 7.5 335-465 1.3 2.0 Z64 1N416C 3060 8.3 300-700 . 2.0 Z64 1N416E 3060	OCR Scan	PDF	1N415C 1N415E 1N416C 1N416E ECG553 ECGG66A ECG580 ECG615A Z13-2 ECG615A CI 3060 elsys mav55 ECG592 1N416C microwave diode ecg 588 ci 3060 DIODE Z54 Z11A 1N415C diode Z6 DIODE
JAN1N23WG Abstract: 1N21* Diode Detector Holder JAN1N21WE 1N23C 1N23C diode 1N53C JAN1N21WG MA490E MA492C 1N831A Text: N/A-COMSEMICONDtBRLNGTON 11 J> • Sb4E2mGGÜ13SÔT■MIC J Point Contact Mixer and Detector Diodes Features ■ PACKAGED CARTRIDGE POINT CONTACT MIXER DIODES ■ COAXIAL POINT CONTACT MIXER DIODES ■ AXIAL LEAD GLASS PACKAGED POINT CONTACT MIXER DIODES ■ AXIAL LEAD GLASS PACKAGED	OCR Scan	PDF
1n415c Abstract: 1N23G 1N21C 1N21D 1N21E 1N21F 1N21G 1N21WE 1N416G 1N416C Text: Point Con tact Diodes: 1 N Series S - X Band Point Contact Mixer Diodes Description This MicroM etrics 1N series of Point Contact Mixer diodes is designed for applications from S-Band through XBand. Each device in this series is in a cartridge package specially designed	OCR Scan	PDF	CS100 1N23F 1N23G 1N23WG 1N23H CS101 1N415C 1n415c 1N23G 1N21C 1N21D 1N21E 1N21F 1N21G 1N21WE 1N416G 1N416C
diac SBS 14 Abstract: diac 083 NTE6405 IR 944 triac varactor diode bb 205 APPLICATION for NTE 6407 low voltage scr DIAC 502 TVPA TRANSISTOR 2501 lf 113 Text: N T E ELE CT RONICS INC_ SEE J> • ~ b43125T D002b72 fibE * N T E 1 -Z S SPECIAL DEVI SILICON UNIJUNCTION TRAN SISTO R UJT Maximum Ratings NTE Type Nim ber Diagram Number Case Style RMS Emitter Current (mA) Interbase Voltage (Vote) RMS Power Dissipation	OCR Scan	PDF
1N23 diode Abstract: 1N78 diode 1N23WGMR 1N26A diode 1n21we 1N26B ka2to 1N415 DMA4148-042 1n23 jan Text: Silicon Point Contact Mixer Diodes Features • ■ ■ High Burnout Resistance Low Noise Figure, even in the Starved L.O. Mode Hermetically Sealed * \ / \ Description These specifications allow the noise figure of the re ceiver to deteriorate no greater than 0.1 dB due to local	OCR Scan	PDF
IN23C Abstract: IN23E in23we DO-37 IN416D 1N26 DO-23 1N25 diode 1N26A diode IN23WGMR Text: 0258354 ADVANCED ADVANCED S EMI CONDUC TOR SEMICONDUCTOR ! 82D 0 0 0 6 3 fl2 D Dff\|oa5ü3S4 o n - o~r 0□0 □Ob3 4 SILICONPOINTCOMCTMIXER OIOÛES ASI Point Contact Mixer Diodes are designed for applications from UHF through 26 GHz. They feature high burnout resistance, low	OCR Scan	PDF	DO-22, DO-23 DO-37 26GHz. supp26A DO-37 1N26B 1N26C IN23C IN23E in23we IN416D 1N26 1N25 diode 1N26A diode IN23WGMR
diode ECG125 Abstract: CI 3060 elsys ECG113A ci 3060 ECG577 Z6 DIODE DIODE GENERAL PURPOSE DET 200 PRV SCR ECG117A ECG576 ECG584 schottky Text: PHILIPS E C 6 INC 54E ]> • b b S 3 ti2a Q00720S 535 m i Q G Diodes and Rectifiers General Purpose ECG Type Peak Reverse Voltage PRV Max V Description Average Rectified Forward Current lO Max Forward Current Repetitive Peak IFRM Max Reverse Recovery Time	OCR Scan	PDF	bb53R2fi ECG109 ECG110A ECG110MP ECG113A ECG114 1N415C 1N415E 1N416C 1N416E diode ECG125 CI 3060 elsys ci 3060 ECG577 Z6 DIODE DIODE GENERAL PURPOSE DET 200 PRV SCR ECG117A ECG576 ECG584 schottky
Z6 DIODE Abstract: z12 diode Z4 diode z11 diode diode ECG125 ECG555 ECG584 schottky ECG117A ecg125 diode ECG178MP Text: PHILIPS E C 6 INC 54E ]> • bbS3ti2a Q00720S 535 m i Q G Diodes and Rectifiers General Purpose ECG Type Peak Reverse Voltage PRV Max V Description Average Rectified Forward Current lO Max Forward Current Repetitive Peak IFRM Max Reverse Recovery Time trr	OCR Scan	PDF	ECG109 ECG110A ECG110MP ECG113A ECG114 DO-27 ECG515 ECG551 ECG117A ECG556 Z6 DIODE z12 diode Z4 diode z11 diode diode ECG125 ECG555 ECG584 schottky ECG117A ecg125 diode ECG178MP

Untitled Abstract: No abstract text available Text: SPECIAL DEVICES VARACTOR DIODES FOR RADIO TUNING M axim um Forw ard C urre nt m A Reverse B reakdow n Voltage (Volts) M inim um Figure of M erit P ow er D issipation (m W ) M inim um Diode C a pa cita nc e (pF) N TE Type Num ber D iagram Num ber A pplication	OCR Scan	PDF
MC2259 Abstract: MC880P MC9713P mc2257 1N4003 germanium diode specification 2N1256 S P 1N4465 MC9802P MC9718P 3N214 Text: Semiconductor Data Library Master Index prepared by Technical Information Center The information in this book has been carefully checked and is believed to be reliable; however, no responsibility is assumed for inaccuracies. Furthermore, this information does not convey to the	OCR Scan	PDF
transistor c2060 Abstract: Transistor Shortform Datasheet & Cross References 1N4465 C1906 transistor Germanium itt 3N58 IN939 MC1230F 2N3866 MOTOROLA C943 transistor Text: Data Book Updating Service I Table of Contents How to Use the Data Book I > INTRODUCTION Complete I N . . . INDEX numerical index o f all ElA-registered device types, with major electrical specifications 2N . . . & 3N . . . INDEX Complete numerical index of all ElA-registered device types,	OCR Scan	PDF	AN-134 transistor c2060 Transistor Shortform Datasheet & Cross References 1N4465 C1906 transistor Germanium itt 3N58 IN939 MC1230F 2N3866 MOTOROLA C943 transistor
617 varactor diode for radio tuning Abstract: 393 DIODE 1N415C microwave Text: SPECIAL DEVICES VARACTOR DIODES FOR RADIO TUNING Reveres Breakdown Volino« Volti Maximum Forward Currant (m *l Power Dissipation (mW) Minimum Figure of Merit PD 280 Q Ct Cr 200 100 @ 3 V 34 @ 3V 2.5 Min 50 280 150 @ 1V 440 @ 1V 15 NTE Type Number Diagram	OCR Scan	PDF	100mA 617 varactor diode for radio tuning 393 DIODE 1N415C microwave
1N23C Abstract: 1N23C diode 1N23 Diode Holder 1N23 diode CI 3060 Silicon Point Contact Mixer Diodes 1n23we 1N21E 1N23CR 1N1132 Text: 0585443 ALPHA IND/ SEMICONDUCTOR "El D lf\| 0SÛS443 Q0DD3fiti E 03E 00386 D T -C>7 _¿> J Silicon Point Contact Mixer Diodes Features • High Burnout Resistance • Low Noise Figure, even in the Starved L.O. Mode • Hermetically Sealed The matching criteria for mixer diodes are as follows:	OCR Scan	PDF
JD 16 Abstract: ecg rectifier diode ECG605 1N415C diode 1N415C Z41A K596 595-AA 1N416E diode ecg 125 Text: PHILIPS E C INC G S4E » • IECG bfe5312fl 00D7E05 244 Diode and Rectifier Outlines cont'd 610 611 612 613 614 L . .3 6 0 " _ J9.I4) .t9? .200 (5 ) ( 5 .0 8 ) .18 < 4.6 ) DIA .IB S ( 4 TO ) n COMMON CATHOOC 7 .787 ■M «H ! L _ .4 2 5 "_J .110' k - f K	OCR Scan	PDF	0007E05 ECG605 ECG113A ECG120 ECG582 ECG581 O-220 1N415C 1N415E 1N416C JD 16 ecg rectifier diode ECG605 1N415C diode Z41A K596 595-AA 1N416E diode ecg 125
1N21* Diode Detector Holder Abstract: MA492C 1N23C diode MA41513 1N493C 1N23G Silicon Point Contact Mixer Diodes 1n415g jan-1n21we 1N23C Text: Point Contact Mixer and Detector Diodes Features • PACKAGED CARTRIDGE POINT CONTACT MIXER DIODES ■ COAXIAL POINT CONTACT MIXER DIODES ■ AXIAL LEAD GLASS PACKAGED POINT CONTACT MIXER DIODES ■ AXIAL LEAD GLASS PACKAGED POINT CONTACT DETECTOR DIODES Description	OCR Scan	PDF
1N23C diode Abstract: DIODE ku 1490 1N25 diode 1N26A diode DO-37 DO-23 1N415C 1N4294 1N4603R 1N26BR Text: SILICON POINT CON TACT MIXER DIODES ASI Point Contact M ixer Diodes are designed for applications from UHF through 26 GHz. The overall noise figure is expressed by the follow ing relationship: NF0 = Lc NR0 + NF if -1 NF„ = overall receiver noise figure	OCR Scan	PDF	DO-22, DO-23 DO-37 ardN21H 1N21HR 1N150 1N160 1N150R 1N160R 1N23C 1N23C diode DIODE ku 1490 1N25 diode 1N26A diode 1N415C 1N4294 1N4603R 1N26BR
in23c Abstract: IN415C IN23CR in23we 1N23F 1N3747 IN26 1N21C HP-432A 1n416 Text: SILICONPOINTCONTACTMIXERDIODES They feature high burnout resistance, low ASI Point Contact Mixer Diodes are designed for applications from UHF through noise figure and are hermetically sealed. They are available in DO-7, DO-22, DO-23 26 GHz. and DO-37 package styles which make	OCR Scan	PDF	DO-22, DO-23 DO-37 26GHz. 1N26B DO-37 1N26C 30MHz, 1000Hz in23c IN415C IN23CR in23we 1N23F 1N3747 IN26 1N21C HP-432A 1n416
1N23 diode Abstract: 1N23 1N53AR 1n3747 1N1132 1N53R 1N415C 1n415 1N26 1N23 ALPHA Text: ALPHA IN»/ SEMICONDUCTOR MAE D • 0SAS443 00011b3 447 ■ ALP Silicon Point Contact Mixer Diodes Description Alpha’s point contact mixer diodes are designed for applications through Ka-band 40 GHz . These diodes employ epitaxial silicon optimized for low noise figure	OCR Scan	PDF

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1N416E Search Results

1N416E Price and Stock

MicroWave Technology Inc 1N416E

NTE Electronics Inc 1N416E

OSRAM SYLVANIA 1N416E

1N416E Datasheets (19)

1N416E Datasheets Context Search

1N416E

1N23 diode

1N416

c5088 transistor

CS100

ecg rectifier diode

CI 3060 elsys

JAN1N23WG

1n415c

diac SBS 14

1N23 diode

IN23C

diode ECG125

Z6 DIODE

Untitled

MC2259

transistor c2060

617 varactor diode for radio tuning

1N23C

JD 16

1N21* Diode Detector Holder

1N23C diode

in23c

1N23 diode