1N5062 Search Results

1N5062

Contextual Info: BL GALAXY ELECTRICAL 1N5059-1N5062 VOLTAGE RANGE: 200 - 800 V CURRENT: 1.0 A FAST RECOVERY RECTIFIER FEATURES DO - 41 Low cost Diffused junction Low leakage Low forward voltage drop High current capability Easily cleaned with Freon,Alcohol,Isopropanol

Contextual Info: 1N5059GPTHRU 1N5062GP GLASS PASSIVATED JUNCTION RECTIFIER Reverse Voltage - 200 to 800 Volts Forward Current - 1 . 0 Ampere DO-2Q4AC FEATURES ♦ Plastic package has Underwriters Laboratory Flammability Classification 94V-0 ♦ High temperature metallurgically

1n5062g

Abstract: DO-204AC JESD22-B102D J-STD-002B 1N5059GP 1N5062GP
Contextual Info: 1N5059GP thru 1N5062GP Vishay General Semiconductor Glass Passivated Junction Rectifier FEATURES • Superectifier structure for high reliability application • Cavity-free glass-passivated junction • Low forward voltage drop d* e t n e Pat * Glass-plastic encapsulation

1N5059

Abstract: 1N5060 1N5061 1N5062 DO-204AP
Contextual Info: 1N5059 THRU 1N5062 GLASS PASSIVATED JUNCTION RECTIFIER Reverse Voltage - 200 to 800 Volts Forward Current - 1. 0 Ampere * D TE FEATURES ♦ High temperature metallurgically bonded construction ♦ 1.0 Ampere operation at TA=75°C with no thermal runaway ♦ Typical IR less than 0.1µA

Contextual Info: 1N5059 THRU 1N5062 MINIATURE GLASS PASSIVATED JUNCTION RECTIFIER Voltage - 200 to 800 Volts Current- 1.0 Ampere FEATURES ♦ High temperature metallurgical^ bonded con­ structed rectifiers ♦ 1.0 Ampere oper­ ation at Ta=75°C with no thermal runaway 'f e

Contextual Info: 1N5059GPTHRU 1N5062GP GLASS PASSIVATED JUNCTION RECTIFIER Reverse Voltage - 200 to 800 Volts Forward Current - 1.0 Ampere DO-2Q4AC S FEATURES ♦ Plastic package has Underwriters Laboratory Flammability Classification 94V-0 ♦ High temperature metallurgical^

1ns061

Contextual Info: 1N5059GP THRU 1N5062GP MINIATURE GLASS PASSIVATED JUNCTION PLASTIC RECTIFIER Voltage - 200 to 800 Volts Current - 1.0 Ampere FEATURES ♦ High temperature metallurgically bonded con­ structed rectifiers ♦ Plastic package has Underwriters Laboratory Flammability Classification 94V-0

1n5060

Abstract: 1N5062 1N5061 1N5059
Contextual Info: 1N5059 1N5060 1N5061 1N5062 w w w. c e n t r a l s e m i . c o m GLASS PASSIVATED SILICON RECTIFIER 1 AMP, 200 THRU 800 VOLTS DESCRIPTION: The CENTRAL SEMICONDUCTOR 1N5059 series types are silicon rectifiers manufactured in a hermetically sealed, glass passivated package,

Contextual Info: INTERNATIONAL SEMICONDUCTOR, INC . 1N5059 thru 1N5062 M INIATURE GLASS PASSIVATED SILICON RECTIFIERS VOLTAGE - 200 TO 800 Volts CURRENT - 1.0 Ampere MECHANICAL DATA FEATURES C a s e : One piece glass, h e rm e tic a lly sealed • G lass Passivated cavity-free junction

1N5060GP

Contextual Info: 1N5059GP THRU 1N5062GP Glass Passivated Junction Rectifier Reverse Voltage 200 to 800 V Forward Current 1.0 A DO-204AC DO-15 Features 0.034 (0.86) 1.0 (25.4) MIN. 0.028 (0.71) DIA. * d e t n e t a P 0.300 (7.6) 0.230 (5.8) 0.140 (3.6) 0.104 (2.6) DIA.

Contextual Info: 1N5059, 1N5060, 1N5061, 1N5062 www.vishay.com Vishay Semiconductors Standard Avalanche Sinterglass Diode FEATURES • Glass passivated junction • Hermetically envelope sealed axial-leaded glass • Controlled avalanche characteristics • Low reverse current

In5062

Abstract: in5061 1N5062 1N5061 1N5060 1n5059 harris JEDEC do-204 1N5059
Contextual Info: HARRIS SEniCON» SECTOR iü l H iMJ bôE D m 43Dgg71 UÜ5Q3QS 414 • 1N5059, 1N5060 1N5061, 1N5062 a r r is SE.COHOUCTO» 1A, 200V - 800V DÌOdeS December 1993 Package Features • JEDEC STYLE D0-204 TOP VIEW Hlgh-Temperature Metallurglcally Bonded, No Com­

Contextual Info: 1N5059 THRU 1N5062 GLASS PASSIVATED JUNCTION RECTIFIER Reverse Voltage - 200 to 800 Volts Forward Current - 1.0 Ampere FEATURES DO-2Q4AP ♦ High temperature metallurgical^ bonded construction ♦ 1.0 Ampere operation atTA=75°C with no thermal runaway ♦ Typical Ir less than 0.1 jaA

1N5059

Abstract: 1N5062 1N5060 1N5061
Contextual Info: BL GALAXY ELECTRICAL 1N5059-1N5062 VOLTAGE RANGE: 200-800 V CURRENT: 2.0 A PLASTIC SILICON RECTIFIER FEATURES Low cos t Diffus ed junction Glass passivated chips Low forward voltage drop High crrent capability Eas ily cleaned with Freon,Alcohol, ls opropand

1N5059

Abstract: 1N5062 1N506 diode 1n5059 1n5062 equivalent 1N5062 diode MBG044 1N5060 1N5061
Contextual Info: DISCRETE SEMICONDUCTORS DATA SHEET handbook, 2 columns M3D116 1N5059 to 1N5062 Controlled avalanche rectifiers Product specification Supersedes data of April 1992 File under Discrete Semiconductors, SC01 1996 Jun 20 Philips Semiconductors Product specification

Contextual Info: 1N5059GP, 1N5060GP, 1N5061GP, 1N5062GP www.vishay.com Vishay General Semiconductor Glass Passivated Junction Plastic Rectifier FEATURES SUPERECTIFIER • Superectifier application structure for high reliability • Cavity-free glass-passivated junction

1N5062

Abstract: 1N5059 1N5060 1N5061
Contextual Info: 1N5059 1N5060 1N5061 1N5062 w w w. c e n t r a l s e m i . c o m GLASS PASSIVATED SILICON RECTIFIERS 1.0 AMP, 200 THRU 800 VOLT DESCRIPTION: The CENTRAL SEMICONDUCTOR 1N5059 series types are silicon rectifiers manufactured in a hermetically sealed, glass passivated package, designed for general

LN5061

Abstract: A14P Rectifier 1N5059 A14B A14B A14P diode A14B LN5060 ln5062 1N5059 1N5060
Contextual Info: Passivated Rectifier A14 SERIES 1N5059 1N5060 1N5061 1N5062 A14P TRANSIENT VOLTAGE PROTECTED 2.5 Amps 200-1000 Volts THE GENERAL ELECTRIC A14 IS A 2.5 AMPERE RATED, AXIAL-LEADED GENERAL PURPOSE RECTIFIER. DUAL HEATSINK CONSTRUCTION PRO­ VIDES RIGID MECHANICAL SUPPORT FOR THE PELLET AND EXCELLENT

1N5062

Contextual Info: 1N5059 THRU 1N5062 Glass Passivated Junction Rectifier * d e t n e t Features Pa DO204AP 0.034 0.86 0.028 (0.71) DIA. Reverse Voltage 200 to 800 V Forward Current 1.0 A • High temperature metallurgically bonded construction • 1.0 ampere operation at TA=75°C with no thermal runaway

1N5062V

Abstract: 1N5062 1N5059 1N5060 1N5061 iso 15765
Contextual Info: 1N5059 to 1N5062 Vishay Semiconductors Standard Avalanche Sinterglass Diode Features • • • • • • • Controlled avalanche characteristics Glass passivated e2 Low reverse current High surge current loading Hermetically sealed axial-leaded glass envelope

Contextual Info: 1N5059GP thru 1N5062GP Vishay General Semiconductor Glass Passivated Junction Rectifier FEATURES • Superectifier structure for High Reliability application • Cavity-free glass-passivated junction • Low forward voltage drop ed* t n e Pat * Glass-plastic encapsulation

Contextual Info: 1N5059GP thru 1N5062GP Vishay General Semiconductor Glass Passivated Junction Rectifier FEATURES • Superectifier structure for high reliability application • Cavity-free glass-passivated junction • Low forward voltage drop d* e t n e Pat • Low leakage current

Contextual Info: 1N5059GP thru 1N5062GP Vishay General Semiconductor Glass Passivated Junction Rectifier FEATURES SUPERECTIFIER • Superectifier application structure for high reliability • Cavity-free glass-passivated junction • Low forward voltage drop • Low leakage current

1N5059GP

Abstract: 1N5062GP DO-204AC J-STD-002
Contextual Info: 1N5059GP thru 1N5062GP Vishay General Semiconductor Glass Passivated Junction Rectifier FEATURES SUPERECTIFIER • Superectifier application structure for high reliability • Cavity-free glass-passivated junction • Low forward voltage drop • Low leakage current