1N5551 Search Results

Contextual Info: 1N5550/US 1N5551/US 1N5552/US 1N5553/US 1N5554/US SENSITRON _ SEMICONDUCTOR TECHNICAL DATA DATA SHEET 126, REV D JAN JANTX JANTXV HIGH CURRENT AXIAL LEAD RECTIFIERS DESCRIPTION: 200-1000 VOLT, 3.0 AMP, 2000 NANOSECOND RECTIFIER -Suffix “US” denotes melf/surface mount packaging

Contextual Info: RECTIFIER, up to 1kV, 5A, 2 jis January 7, 1998 1N5550 1N5551 1N5552 1N5553 1N5554 3SM2 3SM4 3SM6 3SM8 3SM0 TEL805-498-2111 FAX:805-498-3804 W E B :http://www.semtech.com AXIAL LEADED HERMETICALLY SEALED STANDARD RECOVERY RECTIFIER DIODE QUICK REFERENCE DATA

Contextual Info: 200 V -1,000 V Rectifiers 1N5550 1N5551 1N5552 1N5553 1N5554 5.0 A Forward Current 2000 ns Recovery Time AXIAL LEADED HERMETICALLY SEALED MIL-PRF-19500/420 JAN JANTX JANTXV ELECTRICAL CHARACTERISTICS AND MAXIMUM RATINGS Working Part Number Reverse Reverse

1N5405

Abstract: 1N5625 1N5400 1N5401 1N5402 1N5403 CPR2-010 CPR2-020 CPR2-040 CR2-010
Contextual Info: Rectifiers, General Purpose Continued IO (AMPS) 2.0 3.0 @ TA (oC) 75 50 75 55 75 IFSM (AMPS) 50 50 200 100 125 CASE GPR-1A DO-15 DO-201AD GPR-3A VRRM (VOLTS) 50 1N5400 100 CPR2-010 CR2-010 1N5401 200 CPR2-020 CR2-020 1N5402 300 400 1N5550 1N5624 1N5551 1N5625

Contextual Info: 1N5550 1N5551 1N5552 1N5553 1N5554 200 V - 1,000 V Rectifiers 5.0 A Forward Current 2000 ns Recovery Time AXIAL LEADED HERMETICALLY SEALED 3 ELECTRICAL CHARACTERISTICS AND MAXIMUM RATINGS Part Working Number Reverse Voltage Average Rectified Current Reverse

Contextual Info: B K C INTERNATIONAL 3DE D • 1 1 7 *n fl3 DGÜ03GS 7 ■ " " p O V O °j 1N5550 Series • General Purpose Rectifiers in “B” Body Package Type 1N5550 1N5551 1N5552 1N5553 1N5554 Peak Inverse Voltage MIN. PIV Minimum Reverse Breakdown Voltage @ 50 pA

1N5625

Abstract: 1N5405 1n5401 1n5402 1N5404 1N5404 equivalent 1N5406 1N5400 1N5403 CPR2-010
Contextual Info: Rectifiers, General Purpose Continued IO (AMPS) 2.0 3.0 @ TA (oC) 75 50 75 55 75 IFSM (AMPS) 50 50 200 100 125 CASE GPR-1A DO-15 DO-201AD GPR-3A VRRM (VOLTS) 50 1N5400 100 CPR2-010 CR2-010 1N5401 200 CPR2-020 CR2-020 1N5402 300 400 1N5550 1N5624 1N5551 1N5625

Contextual Info: 1N5551+JANS Diodes General Purpose Fast Rectifier Military/High-RelY I O Max.(A) Output Current3.0 V(RRM)(V) Rep.Pk.Rev. Voltage400 t(rr) Max.(s) Rev.Rec. Time2.0u @I(F) (A) (Test Condition)500m @I(R) (A) (Test Condition)1.0 V(FM) Max.(V) Forward Voltage1.2

1N5551US

Contextual Info: Web Datasheet- Power Rectifier Web Datasheet POWER RECTIFIER PART NUMBER: 1N5551US PACKAGE STYLE:MELF-B CONFIGURATION:SINGLE ALL RATINGS ARE @ Tc = 25 °C UNLESS OTHERWISE SPECIFIED. Disclaimer MAXIMUM RATINGS / Conditions SYMBOL MAX PIV 400 Volts MAXIMUM DC OUTPUT CURRENT @ Tc=55 °C

"Power rectifier Diode"

Abstract: power rectifier diode D-5B layout LE17 MIL-PRF19500 QR217 1N5551D3A 1n5551d3
Contextual Info: POWER RECTIFIER DIODE 1N5551D3A / 1N5551D3B • VBR = 440V, IF = 5A, Standard Reverse Recovery Rectifier Diode • Light Weight Hermetic Ceramic Surface Mount Package Designed as a Drop In Replacement for “D-5B” / “E-MELF” Package† • Switching Power Supply Applications

Contextual Info: 1N5550 1N5553 1N5551 1N5554 1N5552 GLASS PASSIVATED SILICON RECTIFIERS 3.0 AMP, 200 THRU 1000 VOLT w w w. c e n t r a l s e m i . c o m DESCRIPTION: The CENTRAL SEMICONDUCTOR 1N5550 series types are silicon rectifiers mounted in a hermetically sealed, glass passivated package designed for general

Contextual Info: LOW VOLTAGE RECTIFIERS 2,000nS RECOVERY AXIAL LEADED HERMETICALLY SEALED MIL-S-19500/420 1N5550 1N5551 1N5552 1N5553 VRWM = 200-1000V , = 5 OA / I 1N5554 JANTX JANTXV RR 1N5550 thru 1N5554 A B C D .185Max 4.7 .180(4.57) Max .115(2.92) Min .042(1.07) Max

Contextual Info: 1N5551+JANTX Diodes General Purpose Fast Rectifier Military/High-RelY I O Max.(A) Output Current3.0 V(RRM)(V) Rep.Pk.Rev. Voltage400 t(rr) Max.(s) Rev.Rec. Time2.0u @I(F) (A) (Test Condition)500m @I(R) (A) (Test Condition)1.0 V(FM) Max.(V) Forward Voltage1.2

1n5551 diode

Abstract: 1N5551
Contextual Info: Web Datasheet- Power Rectifier Web Datasheet POWER RECTIFIER PART NUMBER: 1N5551 PACKAGE STYLE:301 CONFIGURATION:SINGLE ALL RATINGS ARE @ Tc = 25 °C UNLESS OTHERWISE SPECIFIED. Disclaimer MAXIMUM RATINGS / Conditions SYMBOL MAX PIV 400 Volts MAXIMUM DC OUTPUT CURRENT @ Tc=55 °C

LM390

Contextual Info: 1N5551 Spec Sheets Details Diodes, Transistors, Thyristors, Triacs, Dio. 1 of 2 HOME | CATALOG | CART |EXPRESS CHECKOUT | PARTS WATCH | NEW ITEMS |RFQ| Home 1N5551 Availability Online Store

1N5552

Abstract: 1N5550 1N5551 1N5553 1N5554 JANTX 1N5550 JANTX 1N5552
Contextual Info: 1N5550 1N5551 1N5552 1N5553 1N5554 200 V - 1,000 V Rectifiers 5.0 A Forward Current 2000 ns Recovery Time AXIAL LEADED HERMETICALLY SEALED MIL-PRF-19500/420 JAN JANTX 3 JANTXV ELECTRICAL CHARACTERISTICS AND MAXIMUM RATINGS Part Working Number Reverse Voltage

1n5551 diode

Abstract: 1N5551 3SM4 1N5550 1N5552 1N5554 3sm6 3SM8 1N5553
Contextual Info: RECTIFIER, up to 1kV, 5A, 2µs January 7, 1998 1997 SEMTECH CORP. 1N5550 1N5551 1N5552 1N5553 1N5554 3SM2 3SM4 3SM6 3SM8 3SM0 TEL:805-498-2111 FAX:805-498-3804 WEB:http://www.semtech.com 652 MITCHELL ROAD NEWBURY PARK CA 91320 RECTIFIER, up to 1kV, 5A, 2µs

3SM diode

Abstract: TL 5551 DIODE 3SM rectifier 50a rectifier 5A 1000V 042T
Contextual Info: iû^innMsc^ January 7, 1998 RECTIFIER, up to 1kV, 5A, 2\iS 1N5550 1N5551 1N5552 1N5553 1N5554 3SM2 3SM4 3SM6 3SM8 3SM0 TEL805-498-2111 FAX:805-498-3804 W E B :http://www.semtech.com AXIAL LEADED HERMETICALLY SEALED STANDARD RECOVERY RECTIFIER DIODE QUICK REFERENCE

1N5550 JANTX

Abstract: 1n5551 diode 1N5553US 1N5551 JANTX 1N5551 1N5552 1N5553 1N5554 12 volt-30 amp power diode JANTXV 1N5552
Contextual Info: 1N5550/US 1N5551/US 1N5552/US 1N5553/US 1N5554/US SENSITRON _ SEMICONDUCTOR TECHNICAL DATA DATA SHEET 126, REV E JAN JANTX JANTXV HIGH CURRENT AXIAL LEAD RECTIFIERS DESCRIPTION: 200-1000 VOLT, 3.0 AMP, 2000 NANOSECOND RECTIFIER -Suffix “US” denotes melf/surface mount packaging

1N5415

Abstract: 1N5416 1N5417 1N5418 1N5419 1N5550 1N5551 1N5552 1N5553 1N5554
Contextual Info: B K C INTERNATIONAL 3DE D • 117*nfl3 DGÜ03GS 7 ■ " " p O V O °j 1N5550 Series • General Purpose Rectifiers in “B” Body Package Type 1N5550 1N5551 1N5552 1N5553 1N5554 Peak Inverse Voltage MIN. PIV Minimum Reverse Breakdown Voltage @ 50 pA Average

n5551

Abstract: 5011A 1N5552 package 1N5550 1N5551 1N5552 1N5553 1N5554
Contextual Info: 1N5550 1N5551 1N5552 1N5553 1N5554 -"tifili •' n ìco n d u cto r ca rp . C e n tra l S e m iconductor Corp. GLASS P A S S I V A T E D REC TIF IE R 3.0 AMPS, 200 TH R U 1000 VOLTS Central Semiconductor Corp. 1 4 5 Adams Avenue Hauppauge, New York 11 7 8 8

3sm6

Abstract: DS-049 35M6 3SM4 1N5550 1N5552 1N5553 Diode 1N5554 35M8 3SM8
Contextual Info: SEMTECH CORP 5flE » • B M W 1N5550 1N5551 1N5552 1N5553 1N5554 STANDARD RECOVERY AXIAL LEADED HERMETICALLY SEALED STANDARD RECOVERY RECTIFIER DIODE 3SM2 3SM4 3SM6 3SM8 3SM0 • Vr = 200 - 1000V » If = 5.0A • trr = 2jaS • Vf = 1.0V unless otherw ise specified

1N5550-1N5553

Abstract: 1n5550 1n5552 1n5553
Contextual Info: 1N5550 1N5553 1N5551 1N5554 1N5552 GLASS PASSIVATED SILICON RECTIFIER 3 AMP, 200 THRU 1000 VOLTS w w w. c e n t r a l s e m i . c o m DESCRIPTION: The CENTRAL SEMICONDUCTOR 1N5550 series types are silicon rectifiers mounted in a hermetically sealed, glass passivated package designed for general

high temperature reverse bias

Abstract: METHOD-1032 1N6535 JAN
Contextual Info: SCREENING GUIDE FOR HIGH RELIABILITY APPLICATIONS The following screening guide for discretes and assemblies is suggested for high reliability applications, and can be adjusted or modified to suit your requirements. This is taken from Table IV in MIL-PRF-19500, JANTX screening.