1N5621 Search Results

1N5617GP

Contextual Info: 1N5615GP, 1N5617GP, 1N5619GP, 1N5621GP, 1N5623GP www.vishay.com Vishay General Semiconductor Glass Passivated Junction Fast Switching Rectifier FEATURES • Superectifier structure for high reliability condition SUPERECTIFIER • Cavity-free glass-passivated junction

1N5621 JANTX

Abstract: JANTX 1N5615 1N5615 1N5617 1N5619 1N5621 1N5623 1N5619 JAN
Contextual Info: 1N5615 1N5617 1N5619 1N5621 1N5623 200 V - 1,000 V Rectifiers 1.5 A Forward Current 150 ns - 500 ns Recovery Time AXIAL LEADED HERMETICALLY SEALED MIL-PRF-19500/429 JAN JANTX 3 JANTXV ELECTRICAL CHARACTERISTICS AND MAXIMUM RATINGS Part Working Number Reverse

Contextual Info: 1N5621+JAN Diodes General Purpose Fast Rectifier Military/High-RelY I O Max.(A) Output Current1 V(RRM)(V) Rep.Pk.Rev. Voltage800 t(rr) Max.(s) Rev.Rec. Time300n @I(F) (A) (Test Condition)500m @I(R) (A) (Test Condition)1 V(FM) Max.(V) Forward Voltage1.2 @I(FM) (A) (Test Condition)1

Contextual Info: 1N5615GP, 1N5617GP, 1N5619GP, 1N5621GP, 1N5623GP www.vishay.com Vishay General Semiconductor Glass Passivated Junction Fast Switching Plastic Rectifier FEATURES • Superectifier structure for high reliability condition SUPERECTIFIER • Cavity-free glass-passivated junction

1N5621

Contextual Info: Web Datasheet- Power Rectifier Web Datasheet POWER RECTIFIER PART NUMBER: 1N5621 PACKAGE STYLE:102 CONFIGURATION:SINGLE ALL RATINGS ARE @ Tc = 25 °C UNLESS OTHERWISE SPECIFIED. Disclaimer MAXIMUM RATINGS / Conditions SYMBOL MAX PIV 800 Volts MAXIMUM DC OUTPUT CURRENT @ Tc=55 °C

1N5621US

Contextual Info: Web Datasheet- Power Rectifier Web Datasheet POWER RECTIFIER PART NUMBER: 1N5621US PACKAGE STYLE:MELF-1 CONFIGURATION:SINGLE ALL RATINGS ARE @ Tc = 25 °C UNLESS OTHERWISE SPECIFIED. Disclaimer MAXIMUM RATINGS / Conditions SYMBOL MAX PIV 800 Volts MAXIMUM DC OUTPUT CURRENT @ Tc=55 °C

BYT01-200

Abstract: UF54002 RS8KT BYT30P800 MR918 UF54004 PLR818 BYW99P-150 BYW100-100 1N4946 cross reference
Contextual Info: RECTIFIER DIODES CROSS REFERENCE INDUSTRY PART NUMBER 1N4942 1N4942GP 1N4944 1N4944GP 1N4946 1N4946GP 1N4947 1N4947GP 1N4948 1N4948GP 1N5615 1N5615GP 1N5617 1N5617GP 1N5619 1N5619GP 1N5621 1N5621GP 1N5623 1N5623GP BYD33D BYD33G BYD33J BYD33K BYD33M BYR29600

Contextual Info: 1N5615 1N5617 1N5619 1N5621 1N5623 200 V - 1,000 V Rectifiers 1.5 A Forward Current 150 ns - 500 ns Recovery Time AXIAL LEADED HERMETICALLY SEALED 3 ELECTRICAL CHARACTERISTICS AND MAXIMUM RATINGS Part Working Number Reverse Voltage Average Rectified Current

Contextual Info: 1N5621+JANTXV Diodes General Purpose Fast Rectifier Military/High-RelY I O Max.(A) Output Current1 V(RRM)(V) Rep.Pk.Rev. Voltage800 t(rr) Max.(s) Rev.Rec. Time300n @I(F) (A) (Test Condition)500m @I(R) (A) (Test Condition)1 V(FM) Max.(V) Forward Voltage1.2

Contextual Info: 200 V -1,000 V Rectifiers 1N5615 1N5617 1N5619 1N5621 1N5623 1.5 A Forward Current 150 ns - 500 ns Recovery Time AXIAL LEADED HERMETICALLY SEALED MIL-PRF-19500/429 JAN JANTX JANTXV ELECTRICAL CHARACTERISTICS AND MAXIMUM RATINGS Part Number Working Reverse

in5619

Abstract: 1N5621 1N5617 1N5615 1N5619 1N5623
Contextual Info: Datasheet 1N5615 1N5617 1N5619 1N5621 1N5623 FAST RECOVERY GLASS PASSIVATED R EC T IFIER 1.0 AMPS, 200-1000 VOLTS C B il R V w lM h D M Il Semiconductor Corp. 145 Adams Avenue, Hauppauge, NY 11788 USA Tel: 631 435-1110 • Fax: (631) 435-1824 Manufacturers of World Class Discrete Semiconductors

1N5619

Abstract: 1N5615 LN5623 1N5617 1N5621 1N5623 IR50P
Contextual Info: 1989963 C E N T R A L S E M I C O N D U C T O R CENTRAL 92D 00318 Ta SEMICONDUCTOR deT| c +1 eeittrcsi sem iconductor Corp. Central Semiconductor Corp. ooDtma i J~b 1N5615 1N5617 1N5619 1N5621 1N5623 FAST RECOVERY GLASS PASSIVATED RECTIFIER 1.0 AMPS, 200-1000 VOLTS

Contextual Info: 1N5621+JANTX Diodes General Purpose Fast Rectifier Military/High-RelY I O Max.(A) Output Current1 V(RRM)(V) Rep.Pk.Rev. Voltage800 t(rr) Max.(s) Rev.Rec. Time300n @I(F) (A) (Test Condition)500m @I(R) (A) (Test Condition)1 V(FM) Max.(V) Forward Voltage1.2

5615

Abstract: 1N5615
Contextual Info: 1N5615/US,1N5617/US, 1N5619/US,1N5621/US1N5623/US Standard FAST RECOVERY RECTIFIERS SENSITRON _ SEMICONDUCTOR TECHNICAL DATA AV AI L AB L E AS DATA SHEET 5081, REV. A.3

Contextual Info: 1N5621+JANS Diodes General Purpose Fast Rectifier Military/High-RelY I O Max.(A) Output Current1 V(RRM)(V) Rep.Pk.Rev. Voltage800 t(rr) Max.(s) Rev.Rec. Time300n @I(F) (A) (Test Condition)500m @I(R) (A) (Test Condition)1 V(FM) Max.(V) Forward Voltage1.2 @I(FM) (A) (Test Condition)1

ir10a

Abstract: 1N5623 1N5617 1N5619
Contextual Info: 1N5615 1N5617 1N5619 1N5621 1N5623 w w w. c e n t r a l s e m i . c o m FAST RECOVERY GLASS PASSIVATED SILICON RECTIFIERS 1.0 AMP, 200 THRU 1000 VOLT DESCRIPTION: The CENTRAL SEMICONDUCTOR 1N5615 series types are silicon rectifiers mounted in a hermetically

high temperature reverse bias

Abstract: METHOD-1032 1N6535 JAN
Contextual Info: SCREENING GUIDE FOR HIGH RELIABILITY APPLICATIONS The following screening guide for discretes and assemblies is suggested for high reliability applications, and can be adjusted or modified to suit your requirements. This is taken from Table IV in MIL-PRF-19500, JANTX screening.

1N5614 JANTX

Contextual Info: LOW VOLTAGE RECTIFIERS Axial Leaded • Hermetic 70ns-2000ns Recovery • JANTX • JANTXV ELECTRICAL CHARACTERISTICS AND MAXIMUM RATINGS Part Number Working Reverse Voltage Vrwm Average Rectified Current (1) (to) Reverse Current @ Vrwm Forward Voltage (lr)

Contextual Info: 1N5615GP thru 1N5623GP Vishay General Semiconductor Glass Passivated Junction Fast Switching Rectifier FEATURES • Superectifier structure for high reliability condition SUPERECTIFIER • Cavity-free glass-passivated junction • Fast switching for high efficiency

SMD Transistors w04 sot-23

Abstract: transistor SOT-23 w04 SB050 transistor IN4728A mosfet SMD w04 SN30SC4 smd diode code gs1m W01 SMD mosfet W04 sot 23 1s355
Contextual Info: RETURN TO PRODUCT CATALOG TABLE OF CONTENTS RETURN TO PRODUCT CATALOG INDEX RETURN TO DIODES INC. NEW PRODUCTS PAGE Product Catalog Diodes Incorporated 3050 E. Hillcrest Drive Westlake Village, CA 91362-3154 2000/2001 Specifications are subject to change without notice.

IC HXJ 2038

Abstract: 1N52398 DB5T tfk 102 cny 70 hxj 2038 rca 40361 transistor rca 40362 TFK 680 CNY 70 Diode Equivalent 1N34A 2n5952 equivalent
Contextual Info: The Engineering Staff of TEXAS INSTRUMENTS INCORPORATED Components Group The T ransistor and Diode Data Book for Design Engineers T e x a s In s t r u m e n t s IN CO RPO RATED TYPE NUMBER INDEX GLOSSARY TRANSISTOR SELECTION GUIDES TRANSISTOR INTERCHANGEABILITY

Contextual Info: DIGITRON SEMICONDUCTORS 1N5615 – 1N5623 FAST RECOVERY RECTIFIERS MAXIMUM RATINGS Operating Temperature -65°C to +175°C Storage Temperature: -65°C to +200°C Thermal Resistance: -38°C/W Surge Current: 25A ELECTRICAL CHARACTERISTICS Type Peak Inverse Voltage max.

diode cross reference

Abstract: IN5408 equivalent DIOTEC Electronics IN5408 diode 1N4008 PBL302 rgp20 17 diode rectifier 1N4000 1n4004 1n4002 RP602 PBP205
Contextual Info: DIOTEC ELECTRONICS CORPORATION PRODUCT GUIDE TRUE VOID FREE VACUUM DIE SOLDERING SOFT GLASS DIODES HIGH VOLTAGE ULTRA FAST RECOVERY DISH DIODES TVS PRESS FIT WEB SITE: www.diotec-usa.com E-MAIL: Support@diotec-usa.com DIOTEC ELECTRONICS CORP. THE RECTIFIER SPECIALISTS

BYD74G

Abstract: FUR460 diode tfk 18db6a diode cross reference FAGOR SM6T33CA BZY97C tfk 240 1SMZG06GP D4SB80Z
Contextual Info: Cross Reference Every care has been taken in compiling this cross reference list which is published in good faith to assist engineers. Readers are reminded that this list is intended for guidance only. FAGOR ELECTRÓNICA can not be held responsible for any