1N5719 Search Results

Contextual Info: 1N5719 asi SILICON PIN DIODE PACKAGE STYLE 01 DESCRIPTION: T he1N 5719 is a Silicon PIN Diode Designed for General Purpose Attenuator and Switching Applications from 100 MHz to 3 GHz. MAXIMUM RATINGS If 100 mA Vr 150 V P diss 250 mW @ Ta = 25 °C Tj -65 to +200 °C

JANTX1N5719

Abstract: Diode LT 443 1N5719 1N5719 JAN 1N5719 JANTX
Contextual Info: HEWLETT g PIN SWITCHING DIODE MILITARY APPROVED MIL-S-19500/443 PACK ARD COMPONENTS JAN 1N5719 1N5719 Features PRODUCTS LARGE DYNAMIC RANGE LOW HARMONIC DISTORTION Maximum Ratings at The JAN Series 1N5719 is a planar passivated silicon PIN diode designed fo r use in RF sw itching circuits. These

Contextual Info: 1N5719 asii SILICON PIN DIODE PACKAGE STYLE 01 DESCRIPTION: The 1N5719 is a Silicon PIN Diode Designed for General Purpose Attenuator and Switching Applications from 100 MHz to 3 GHz. MAXIMUM RATINGS If 1OO mA Vr 15O V Pd i s s 25O mW @ Ta = 25 °C Tj -65 to +2OO 0C

1N5719

Contextual Info: 1N5719 SCHOTTKY DIODE IN HERMETIC CERAMIC SURFACE MOUNT PACKA. Page 1 of 1 Enter Your Part # Home Part Number: 1N5719 Online Store 1N5719 Diodes SCHOTTKY DIODE IN HERMETIC CERAMIC SURFACE Transistors MOUNT PACKAGE FOR HIGH RELIABILITY APPLICATIONS Integrated Circuits

Contextual Info: Whpl H E W LE T T mL'rtà PA C K A R D PIN Diodes Reliability Data 1N5719 5082-3001 5082-3002 5082-3039 5082-3077 HPND-4165 HPND-4166 Description Applications For applications requiring component reliability estima­ tion, Hewlett-Packard provides reliability data for all families of

1N5719 JANTX

Abstract: 1N5719 JAN 1N5719 JANTX 1N5719
Contextual Info: NOTICE OF CANCELLATION INCH-POUND MIL-PRF-19500/443B NOTICE 2 11 June 2002 SUPERSEDING NOTICE 1 30 August 2001 PERFORMANCE SPECIFICATION SHEET SEMICONDUCTOR DEVICE, DIODE, SILICON, SWITCHING TYPE 1N5719 JAN, JANTX AND JANTXV MIL-PRF-19500/443B, dated 2 July 1999, is hereby canceled. Future acquisition for this material should refer to

1N5767

Contextual Info: 20 STERN AVE. SPRINGFIELD, NEW JERSEY 07081 TELEPHONE: 973 376-2922 (212) 227-6005 FAX: (973) 376-8960 U.SA PIN Diodes for RF Switching and Attenuating Technical Data 1N5719, 1N5767, 5082-3001, 5082-3039, 5082-3077, 5082-3080/81, 5082-3188, 5082-3379 Features

HP 5082-3081

Abstract: diode 5082-3168 HPND-4165 HP 5082-3168 vhf antenna mtbf hp 3042 1N5767 5082-3168 diode 5082-3001 5082-3042
Contextual Info: H E W L E T T P A CK A RD COMPONENTS 5082 3001/02 HPND-4165/66 5082-3039 1N5719 5082-3042/43 5082-3077 5082-3080 (1N5767) 5082-3081 5082-3168/88 PIN DIODES FOR RF SWITCHING AND ATTENUATING Features LOW HARMONIC DISTORTION LARGE DYNAMIC RANGE LOW SERIES RESISTANCE

1N5767

Abstract: IN5719 1nxxxx diode 5082-XXXX
Contextual Info: 1N5719, 1N5767, 5082-3001, 5082-3039, 5082-3077, 5082-3080/81, 5082-3188, 5082-3379 PIN Diodes for RF Switching and Attenuating Data Sheet Description/Applications Features These general purpose switching diodes are intended for low power switching applications such as RF

IAM-81008

Abstract: 5082-2830 HSMP-3895 5082-3043 ina-02170 INA-01170 30533 5082-0012 5082-2970 HSMP 2800
Contextual Info: Alphanumeric Index 1N5711 . 3-52 1N5712 . 3-52 1N5719 . 2-101 1N5767 . 2-101

diode 5082-3077

Abstract: IN5719 1N5767 5082-3039 diode 5082-3080 1N5 diode 1N5719 F 5082 1N5712 RS-296-D
Contextual Info: PIN Diodes for RF Switching and Attenuating Technical Data 1N5719, 1N5767, 5082-3001, 5082-3039, 5082-3077, 5082-3080/81, 5082-3188, 5082-3379 Features • Low Harmonic Distortion • Large Dynamic Range • Low Series Resistance • Low Capacitance Description/Applications

1N5719

Contextual Info: TELEPHONE: 973 376-2922 (212) 227-6005 FAX: (973) 376-8960 20 STERN AVE. SPRINGFIELD, NEW JERSEY 07081 U.SA 1N5719 PACKAGE STYLE 01 .075(1.9051 .065(1.651) DESCRIPTION: 1.0 MIN (254) 2 PLACES 1N5719 is a Silicon PIN Diode Designed for General Purpose

Contextual Info: 1N5719+JANTX Diodes General Purpose PIN Diode Military/High-RelY Volt Req. V 150 @I(R) (A) (Test Condition)10u r(s) Max.(ê) Series Resist.1.25 @If (A)100m Ct{Cj} Nom. (F) Junction Cap.250f Carrier Lifetime (S)100n @I(F) (test) (A)50m @I(R) (A) (Test Condition)

1N5719

Abstract: diode 5082-3077
Contextual Info: PIN Diodes Reliability Data 1N5719 5082-3001 5082-3039 5082-3077 Description For applications requiring component reliability estimation, Hewlett-Packard provides reliability data for all families of devices. Data is initially compiled from reliability tests run prior to

5082-2830

Abstract: IAM-81008 HSMP-3895 hsms-2850 5082-0012 8205 datasheet hsms-285b HSMS-285C HSMS-2862 MSA-0870
Contextual Info: Alphanumeric Index 1N5711 . 3-52 1N5712 . 3-52 1N5719 . 2-101 1N5767 . 2-101

1N5767

Abstract: DIODE T25 in5719 1nxxxx diode 1N5712 1N5719 RS-296-D digital phase shifters 1N5 diode 5082-XXXX
Contextual Info: 1N5719, 1N5767, 5082-3001, 5082-3039, 5082-3077, 5082-3080/81, 5082-3188, 5082-3379 PIN Diodes for RF Switching and Attenuating Data Sheet Description/Applications These general purpose switch­ing diodes are intended for low power switching applications such as RF ­duplexers,

in5719

Abstract: DIODE T25 5082-XXXX 5082-3001 1N5719 diode 5082-3077 diode 5082- 3039 5082-3080 1N57xx 1Nxx
Contextual Info: Agilent 1N5719, 1N5767, 5082-3001, 5082-3039, 5082-3077, 5082-3080/81, 5082-3188, 5082-3379 PIN Diodes for RF Switching and Attenuating Data Sheet Features • Low Harmonic Distortion • Large Dynamic Range Description/Applications These general purpose switching

IN5767

Abstract: HP 5082-3081 HPND-4165 EN 4165 5082-3042 1N5719 1N5767 HPND-4166 IN5719 RS-296-D
Contextual Info: PIN DIODES FOR RF SWITCHING AND ATTENUATING 1N5719 IN5767 5082-3001/02 5082-3039 5082-3042/43 5082-3077 5082-3080 5082-3081 5082-3168/88 5082-3379 HPNO-4165/66 Features LOW HARMONIC DISTORTION LARGE DYNAMIC RANGE LOW SERIES RESISTANCE LOW CAPACITANCE LOW TEMPERATURE COEFFICIENT

1N5719

Abstract: pin diode
Contextual Info: 1N5719 SILICON PIN DIODE PACKAGE STYLE 01 DESCRIPTION: 1N5719 is a Silicon PIN Diode Designed for General Purpose Attenuator and Switching Applications from 100 MHz to 3 GHz. MAXIMUM RATINGS IF 100 mA VR 150 V PDISS 250 mW @ TA = 25 C TJ -65 C to +200 C

HSCH-5337

Abstract: HSMS-2850 5082-3188 HSMP-3804 ifd 0512 5082-2970 5082-2800 SERIES DATASHEET 5082-2830 AT-41470 HSCH-9301
Contextual Info: Alphanumeric Index 1N5711 . 3-52 1N5712 . 3-52 1N5719 . 2-101 1N5767 . 2-101

Contextual Info: 1N5719+JAN Diodes General Purpose PIN Diode Military/High-RelY Volt Req. V 150 @I(R) (A) (Test Condition)10u r(s) Max.(ê) Series Resist.1.25 @If (A)100m Ct{Cj} Nom. (F) Junction Cap.250f Carrier Lifetime (S)100n @I(F) (test) (A)50m @I(R) (A) (Test Condition)

AT-41486

Abstract: 8060 IAM MSA-1105 VTO-8000 HSMP-3895 HSCH-5337 ATF-46171 HSMS-2804 HSCH-5313 HSMS-2862
Contextual Info: Alphanumeric Index 1N5711 . 3-52 1N5712 . 3-52 1N5719 . 2-101 1N5767 . 2-101

IC HXJ 2038

Abstract: 1N52398 DB5T tfk 102 cny 70 hxj 2038 rca 40361 transistor rca 40362 TFK 680 CNY 70 Diode Equivalent 1N34A 2n5952 equivalent
Contextual Info: The Engineering Staff of TEXAS INSTRUMENTS INCORPORATED Components Group The T ransistor and Diode Data Book for Design Engineers T e x a s In s t r u m e n t s IN CO RPO RATED TYPE NUMBER INDEX GLOSSARY TRANSISTOR SELECTION GUIDES TRANSISTOR INTERCHANGEABILITY

I-3080

Contextual Info: GLASS PACKAGED PIN DIODES FOR RF SWITCHING AND ATTENUATING metelics CORPORATION 1 FEATURES • Low Series Resistance • Low C apacitance • Fast Switching and Current Controlled Attenuator Types • Controlled Resistance Curves M AXIM UM RATINGS Total Power Dissipation . . . . 2 5 0 m W a t + 2 5 ° C