1P503 Search Results
1P503 Datasheets (5)
Part | ECAD Model | Manufacturer | Description | Datasheet Type | PDF Size | Page count | |
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1P503 |
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SMT 90 degree Pico Xinger Hybrid Coupler | Original | 210.31KB | 3 | ||
1P503 |
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Hybrid Couplers 3 dB, 90 degrees | Original | 274.79KB | 3 | ||
1P503 |
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Hybrid Couplers 3 dB, 90° | Original | 139.5KB | 4 | ||
1P503AS |
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RF/IF and RFID - RF Directional Coupler - RF DIR COUPLER 1.7GHZ-2GHZ SMD | Original | 715.2KB | |||
1P503S |
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Hybrid Couplers 3 dB, 90° | Original | 365.3KB | 3 |
1P503 Price and Stock
TTM Technologies 1P503ASRF DIR COUPLER 1.7GHZ-2GHZ SMD |
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1P503AS | Cut Tape | 1,797 | 1 |
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1P503AS | 128 |
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1P503AS | 1,877 | 1 |
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NIDEC Components 1211P503TRIMMER 50KOHM 0.75W PC PIN SIDE |
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1211P503 | Tube |
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Vishay Sfernice M61P503KT2061 P 50K 10% TU50 E3 |
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M61P503KT20 | Tube | 1 |
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Vishay Intertechnologies M61P503KT20Potentiometers 61 P 50K 10% TU50 e3 |
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M61P503KT20 |
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M61P503KT20 | Bulk | 600 |
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Microtherm Sentronic TK32-T02-MG01-B1P-503-MICThermostats 1/2" Bi-metal / , 50C 6.3x0.8mm terminals/90 deg angle +/-3% tol. |
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TK32-T02-MG01-B1P-503-MIC |
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1P503 Datasheets Context Search
Catalog Datasheet | Type | Document Tags | |
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Contextual Info: Model 1P503S Rev. B Hybrid Couplers 3 dB, 90°° Description The 1P503S Pico Xinger is a low profile, miniature 3dB hybrid coupler in an easy to use surface mount package designed for DCS and PCS applications. The 1P503S is designed for balanced amplifiers, variable |
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1P503S 1P503S | |
Contextual Info: Model 1P503AS REV A Hybrid Couplers 3 dB, 90 Description The 1P503AS Pico Xinger is a low profile, high performance 3dB hybrid coupler in an easy to use manufacturing friendly surface mount package. It is designed for DCS and PCS applications. The 1P503AS is designed for |
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1P503AS 1P503AS RF-35, RO4003 EIA-481-2. | |
1P503S
Abstract: ghz hybrid coupler
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1P503S 1P503S ghz hybrid coupler | |
Contextual Info: Model 1P503S Rev. C Hybrid Couplers 3 dB, 90°° Description The 1P503S Pico Xinger is a low profile, miniature 3dB hybrid coupler in an easy to use surface mount package designed for DCS and PCS applications. The 1P503S is designed for balanced amplifiers, variable |
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1P503S 1P503S | |
1P503
Abstract: 1P503S EIA-481-2 ghz hybrid coupler
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1P503 1P503 1P503) 1P503* EIA-481-2. 1P503S EIA-481-2 ghz hybrid coupler | |
SMT hybrid coupler
Abstract: Ever Ohms Industry 1P503
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1P503 VER5/20/2002 1P503 SMT hybrid coupler Ever Ohms Industry | |
RF Directional CouplersContextual Info: Model 1P503 Rev. A Hybrid Couplers 3 dB, 90° Description The 1P503 Pico Xinger is a low profile, miniature 3dB hybrid coupler in an easy to use surface mount package designed for DCS and PCS applications. The 1P503 is designed for balanced amplifiers, variable |
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1P503 1P503 RF Directional Couplers | |
1P503Contextual Info: Model 1P503 Rev. A Hybrid Couplers 3 dB, 90° Description The 1P503 Pico Xinger is a low profile, miniature 3dB hybrid coupler in an easy to use surface mount package designed for DCS and PCS applications. The 1P503 is designed for balanced amplifiers, variable |
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1P503 1P503 | |
1P503S
Abstract: ghz hybrid coupler
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1P503S 1P503S ghz hybrid coupler | |
Contextual Info: Model 1P503 Rev. A Hybrid Couplers 3 dB, 90° Description The 1P503 Pico Xinger is a low profile, miniature 3dB hybrid coupler in an easy to use surface mount package designed for DCS and PCS applications. The 1P503 is designed for balanced amplifiers, variable |
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1P503 1P503 | |
MRF8P20140WH/HSContextual Info: Freescale Semiconductor Technical Data Document Number: MRF8P20140WH Rev. 0, 4/2011 RF Power Field Effect Transistors N-Channel Enhancement-Mode Lateral MOSFETs Designed for CDMA base station applications with frequencies from 1880 to 2025 MHz. Can be used in Class AB and Class C for all typical cellular base |
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MRF8P20140WH MRF8P20140WHR3 MRF8P20140WHSR3 MRF8P20140WH/HS | |
Contextual Info: Freescale Semiconductor Technical Data Document Number: AFT20P140-4WN Rev. 0, 4/2013 RF Power LDMOS Transistor N-Channel Enhancement-Mode Lateral MOSFET This 24 watt symmetrical Doherty RF power LDMOS transistor is designed for cellular base station applications requiring very wide instantaneous bandwidth |
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AFT20P140--4WN AFT20P140-4WNR3 | |
2.4ghz lnb
Abstract: 1M710S 1G1304-30 XC0900A-03S xc1900a-03s BD2425J50100A00 3A425 B0011E75300A00 diplexer gsm umts 900 stripline power combiner splitter
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XC0450A-03 XC0450L-03 XC0450E-03 1F1304-3 XC0900P-03 XC0900E-03 XC0900A-03 XC0900L-03 S03B888N3 XC1400P-03 2.4ghz lnb 1M710S 1G1304-30 XC0900A-03S xc1900a-03s BD2425J50100A00 3A425 B0011E75300A00 diplexer gsm umts 900 stripline power combiner splitter | |
Contextual Info: Freescale Semiconductor Technical Data Document Number: MRF8P20140WH Rev. 1, 11/2013 RF Power Field Effect Transistors N-Channel Enhancement-Mode Lateral MOSFETs Designed for CDMA base station applications with frequencies from 1880 to 2025 MHz. Can be used in Class AB and Class C for all typical cellular base |
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MRF8P20140WH MRF8P20140WHR3 MRF8P20140WHSR3 MRF8P20140WGHSR3 | |
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SSG 23 TRANSISTOR
Abstract: 1P503 FPM2750QFN Filtronic Components
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FPM2750QFN 1850MHz 36dBm 100mA) 23dBm 2002/95/EC) FPM2750QFN 22A114. MIL-STD-1686 SSG 23 TRANSISTOR 1P503 Filtronic Components | |
FPD750
Abstract: SSG 23 TRANSISTOR Filtronic Components FPM2750QFN 1P503 SSG TRANSISTOR Filtronic Compound Semiconductors 36347
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FPM2750QFN 1850MHz 32dBm 36dBm 18dBm 2002/95/EC) FPM2750QFN 22A114. MIL-STD-1686 MIL-HDBK-263. FPD750 SSG 23 TRANSISTOR Filtronic Components 1P503 SSG TRANSISTOR Filtronic Compound Semiconductors 36347 | |
OP6180
Abstract: OP6180-DEV 4G base station power amplifier OP6180-DEVS AN10921 BLF7G20LS-200 ad9122 TRANSISTOR c104 transistor c114 diagram transistor c118
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AN10921 BLF7G20LS-200 BLF7G20LS-200, OP6180 OP6180-DEV 4G base station power amplifier OP6180-DEVS AN10921 ad9122 TRANSISTOR c104 transistor c114 diagram transistor c118 | |
GRM32ER7YA106K88L
Abstract: AN10847 3214W-1-201E CRCW08052K00FKTA ATC100B150JT500X GRM31MR71H105K88L 7808 cw cw 7808 GMSK fm potentiometer 201E
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AN10847 BLF6G20-230PRN BLF6G20-230PRN, AN10847 GRM32ER7YA106K88L 3214W-1-201E CRCW08052K00FKTA ATC100B150JT500X GRM31MR71H105K88L 7808 cw cw 7808 GMSK fm potentiometer 201E | |
dn25d
Abstract: florida rf 32-1123 ALR-56M 83-7006TC Florida RF 32-1199 florida rf 100 2a 8002B amplifier 81-8004B 2y194 jx503
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BJ047 BJ085 BJ141 RG178 RG316 RD316 RG223 RG400 RG142 dn25d florida rf 32-1123 ALR-56M 83-7006TC Florida RF 32-1199 florida rf 100 2a 8002B amplifier 81-8004B 2y194 jx503 | |
MRF8P20140WHS
Abstract: mrf8p20140 J473 MRF8P20140W
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MRF8P20140WH MRF8P20140WHR3 MRF8P20140WHSR3 MRF8P20140WHS mrf8p20140 J473 MRF8P20140W | |
C5750X7S2A106KT
Abstract: AFT20P140-4WNR3 aft20p140-4wn aft20p140 TRANSISTOR GF 507 MXc 501
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AFT20P140--4WN AFT20P140-4WNR3 AFT20P140--4WN C5750X7S2A106KT AFT20P140-4WNR3 aft20p140-4wn aft20p140 TRANSISTOR GF 507 MXc 501 | |
FPM2750QFN
Abstract: FPM2750 0603 footprint IPC 1P503 EBD15PA
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FPM2750QFN FPM2750QFN 1850MHz 36dBm 100mA) 23dBm 900MHz) FPM2750 0603 footprint IPC 1P503 EBD15PA | |
Contextual Info: AN10944 1930 MHz to 1990 MHz Doherty amplifier using the BLF7G20LS-200 Rev. 2 — 28 October 2013 Application note Document information Info Content Keywords RF power transistors, Doherty architecture, LDMOS, power amplifier, RF performance, Digital PreDistortion DPD , W-CDMA, BLF7G20LS-200 |
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AN10944 BLF7G20LS-200 BLF7G20LS-200 1J503S 1P503S | |
FPM2750
Abstract: CAP-22nF-0603-10 Filtronic Components
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FPM2750QFN 1850MHz 36dBm 100mA) 23dBm 2002/95/EC) FPM2750QFN 22A114. MIL-STD-1686 FPM2750 CAP-22nF-0603-10 Filtronic Components |