1SS187 Search Results

Contextual Info: 1SS187 SURFACE MOUNT FAST SWITCHING DIODE REVERSE VOLTAGE – 80 Volts FORWARD CURRENT – 0.1 Ampere FEATURES SOT-23 • Fast Switching Speed • For general purpose switching applications SOT-23 Dim. A A1 b c D E E1 e e1 L MECHANICAL DATA • Case: SOT-23 Plastic

1SS187

Contextual Info: RECTRON 1SS187 SEMICONDUCTOR TECHNICAL SPECIFICATION SOT-23 SWITCHING DIODE FEATURES * Power dissipation P D: 150 mW Tamb=25OC * Forward current I F: 100 mA * Reverse voltage VR: 80 V * Operating and storage junction temperature range TJ,Tstg: -55OCto+150OC

Contextual Info: 1SS187 TO SHIBA TO SHIBA DIODE SILICON EPITAXIAL PLANAR TYPE 1 S S 1 87 Unit in mm ULTRA HIGH SPEED SW ITCHING APPLICATIO N. 2 .5 • • • • Small Package Low Forward Voltage Fast Reverse Recovery Time Small Total Capacitance + - 0.5 0.3 : SC-59 : Vp 3 = 0.92V (Typ.)

Contextual Info: Diodes SMD Type High Speed Switching Diode 1SS187 SOT-23 • Features Unit: mm +0.1 2.9-0.1 +0.1 0.4-0.1 1 0.55 +0.1 1.3-0.1 +0.1 2.4-0.1 ●Diode capacitance :Cd=2.2pF typ. 0.4 3 ● Fast reverse recovery time:trr=1.6ns(typ.) 2 +0.1 0.95-0.1 +0.1 1.9-0.1

Contextual Info: JIANGSU CHANGJIANG ELECTRONICS TECHNOLOGY CO., LTD SOT-23 Plastic-Encapsulate Diodes 1SS187 SWITCHING DIODE SOT—23 FEATURES １．０ Power dissipation PD : 150 mW（Tamb=25℃） Forward Current IF: 100 mA Reverse Voltage VR : 80 V Operating and storage junction temperature range

1SS187

Contextual Info: 1SS187 SWITCHING DIODE SOT-23 Plastic-Encapsulate DIODE Features SOT-23 Power dissipation P D : 150 mW Tamb=25 C Forward Current I F : 100 mA Reverse Voltage V R : 80V Operating and storage junction temperature range T j , T stg : -55 C to +150 C 3 o 2 1.

1SS187

Contextual Info: 1SS187 TOSHIBA Diode Silicon Epitaxial Planar Type 1SS187 Unit: mm Ultra High Speed Switching Application z Small package : SC-59 z Low forward voltage : VF 3 = 0.92V (typ.) z Fast reverse recovery time : trr = 1.6ns (typ.) z Small total capacitance : CT = 2.2pF (typ.)

1SS187

Contextual Info: 1SS187 TOSHIBA Diode Silicon Epitaxial Planar Type 1SS187 Unit: mm Ultra High Speed Switching Application Small package : SC-59 Low forward voltage : VF 3 = 0.92V (typ.) Fast reverse recovery time : trr = 1.6ns (typ.) Small total capacitance : CT = 2.2pF (typ.)

sot-23 DIODE marking code D3

Abstract: 1SS187 sot 23-5 marking code 0-37G d3 sot23
Contextual Info: BL Galaxy Electrical Production specification Surface mount switching diode 1SS187 FEATURES z Pb Low forward voltage VF 3 =0.92V(typ). Lead-free z Fast switching. z Fast reverse recovery time:trr=1.6ns(typ) APPLICATIONS z High speed switching application.

1SS187

Contextual Info: 1SS187 SWITCHING DIODE SOT-23 Plastic-Encapsulate DIODE Features SOT-23 Power dissipation P D : 150 mW Tamb=25 C Forward Current I F : 100 mA Reverse Voltage V R : 80V Operating and storage junction temperature range T j , T stg : -55 C to +150 C 3 o 2 1.

Contextual Info: 1SS187 Diodes General Purpose Fast Rectifier Military/High-RelN I O Max.(A) Output Current100m V(RRM)(V) Rep.Pk.Rev. Voltage85.0 t(rr) Max.(s) Rev.Rec. Time4.0n @I(F) (A) (Test Condition)10.0m @I(R) (A) (Test Condition) V(FM) Max.(V) Forward Voltage1.2 @I(FM) (A) (Test Condition)100m

1SS187

Abstract: marking MI
Contextual Info: 1SS187 SILICON EPITAXIAL PLANAR TYPE U n i t in m m ULTRA HIGH SPEED SWITCHING APPLICATION. f-Q5 2 . 5 - 0.3 FEATURES : . Small Package : SOT-23MOD . Low Forward Voltage : Vp = 0 .9 2 V T y p . . Fast Reverse Recovery Time : t r r - l •6 n s ( T y p . )

Contextual Info: JIANGSU CHANGJIANG ELECTRONICS TECHNOLOGY CO., LTD SOT-23 Plastic-Encapsulate Diodes 1SS187 Switching Diode SOT-23 FEATURES y Low forward voltage : VF 3 =0.92V(typ.) y Fast reverse recovery time : trr=1.6ns(typ.) 1. CATHODE MARKING: D3• 2. N.C. 3. ANODE Maximum Ratings @TA=25℃

Contextual Info: 1SS187 TOSHIBA Diode Silicon Epitaxial Planar Type 1SS187 Unit: mm Ultra High Speed Switching Application l Small package : SC-59 l Low forward voltage : VF 3 = 0.92V (typ.) l Fast reverse recovery time : trr = 1.6ns (typ.) l Small total capacitance : CT = 2.2pF (typ.)

1SS187

Abstract: TO-236MOD
Contextual Info: 1SS187 TOSHIBA Diode Silicon Epitaxial Planar Type 1SS187 Unit in mm Ultra High Speed Switching Application Small package : SC-59 Low forward voltage : VF 3 = 0.92V (typ.) Fast reverse recovery time : trr = 1.6ns (typ.) Small total capacitance : CT = 2.2pF (typ.)

1SS187

Contextual Info: Transys Electronics L I M I T E D SOT-23 Plastic-Encapsulated Diodes 1SS187 SWITCHING DIODE SOT-23 FEATURES Power dissipation 1. 0 mW Tamb=25℃ Forward Current 100 m A IF: Reverse Voltage 80 V VR: Operating and storage junction temperature range 0. 4 2. 9

marking d3

Contextual Info: 1SS187 Switching Diodes SOT-23 1. CATHODE 2. N.C. 3. ANODE Features — — Low forward voltage : VF 3 =0.92V(typ.) Fast reverse recovery time : trr=1.6ns(typ.) MARKING: D3 Dimensions in inches and (millimeters) Maximum Ratings @TA=25℃ Parameter Symbol Limits

1SS187

Contextual Info: 1SS187 TOSHIBA Diode Silicon Epitaxial Planar Type 1SS187 Unit: mm Ultra High Speed Switching Application l Small package : SC-59 l Low forward voltage : VF 3 = 0.92V (typ.) l Fast reverse recovery time : trr = 1.6ns (typ.) l Small total capacitance : CT = 2.2pF (typ.)

1SS187

Abstract: J-STD-020D
Contextual Info: 1SS187 SURFACE MOUNT FAST SWITCHING DIODE REVERSE VOLTAGE – 80 Volts FORWARD CURRENT – 0.1 Ampere FEATURES SOT-23 • Fast Switching Speed • For general purpose switching applications SOT-23 Dim. A A1 b c D E E1 e e1 L L1 MECHANICAL DATA • Case: SOT-23 Plastic

Contextual Info: Product specification 1SS187 SOT-23 • Features Unit: mm +0.1 2.9-0.1 +0.1 0.4-0.1 1 0.55 +0.1 1.3-0.1 +0.1 2.4-0.1 ●Diode capacitance :Cd=2.2pF typ. 0.4 3 ● Fast reverse recovery time:trr=1.6ns(typ.) 2 +0.1 0.95-0.1 +0.1 1.9-0.1 +0.1 0.97-0.1 +0.05

Contextual Info: SOT-23 Plastic-Encapsulate Diodes 1SS187 SWITCHING DIODE SOT-23 FEATURES Power dissipation 1. 0 mW Tamb=25℃ Forward Current 100 m A IF: Reverse Voltage 80 V VR: Operating and storage junction temperature range 0. 4 2. 9 2. 4 1. 3 0. 95 150 1. 9 PD : 0. 95

top marking c3 sot23

Abstract: marking C3 sot-23 1SS226 c3 1SS193 F3 SOT-23 DIODE 1SS184 MARKING B3 SOT-23 1SS184B3 SOT-23 marking C3 marking G3
Contextual Info: 1SS181/1SS184/1SS187 1SS190/1SS193/1SS196/1SS226 Surface Mount Switching Diodes SWITCHING DIODE P b Lead Pb -Free 100m AMPERES 80 VOLTS Features: * Fast Switching Speed * Surface Mount Package Ideally Suited for Automatic Insertion * High Conductance * For General Purpose Switching Applications

1SS187

Contextual Info: 1SS187 TOSHIBA Diode Silicon Epitaxial Planar Type 1SS187 Unit: mm Ultra High Speed Switching Application z Small package : SC-59 z Low forward voltage : VF 3 = 0.92V (typ.) z Fast reverse recovery time : trr = 1.6ns (typ.) z Small total capacitance : CT = 2.2pF (typ.)

1SS187

Contextual Info: Diodes SMD Type ULTRA HIGH SPEED SWITCHING APPLICATION 1SS187 SOT-23 Unit: mm +0.1 2.9-0.1 +0.1 0.4-0.1 +0.1 1.3-0.1 +0.1 2.4-0.1 Features 0.4 3 1 Low forward voltage :VF 3 = 0.92 V(Typ.) 0.55 Small Package 2 +0.1 0.95-0.1 +0.1 1.9-0.1 Fast Reverse Recovery Time :trr = 1.6 ns(Typ.)