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    HUBER+SUHNER 32061SE-29171SVCR3-29171SVCR3-13

    RF Cable Assemblies VITA 67.3 SMPS(f) to VITA 67.3 SMPS(f)
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    Mouser Electronics 32061SE-29171SVCR3-29171SVCR3-13
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    Toshiba America Electronic Components 1SV313(TPH3,F)

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    Quest Components 1SV313(TPH3,F) 2,311
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    1SV313 Datasheets (6)

    Part ECAD Model Manufacturer Description Curated Datasheet Type PDF
    1SV313 Kexin Variable Capacitance Diode (VCO for UHF Band Radio) Original PDF
    1SV313 Toshiba Diode Original PDF
    1SV313 Toshiba Variable Capacitance Diodes; Surface Mount Type: Y; Package: USC; Number of Pins: 2; Application Scope: VHF/UHF VCO Original PDF
    1SV313 TY Semiconductor Variable Capacitance Diode (VCO for UHF Band Radio) - SOD-323 Original PDF
    1SV313 Unknown Capacitance diode (Varactor, varicap) Scan PDF
    1SV313TPH3 Toshiba 1SV313TPH3 - Diode VAR Cap Single 10V 7.3pF 2-Pin USC T/R Original PDF

    1SV313 Datasheets Context Search

    Catalog Datasheet MFG & Type PDF Document Tags

    Untitled

    Abstract: No abstract text available
    Text: 1SV313 TOSHIBA DIODE SILICON EPITAXIAL PLANAR TYPE 1SV313 VCO FOR UHF BAND RADIO Unit in mm l High Capacitance Ratio : C0.5V/C2.5V = 2.5 Typ. l Low Series Resistance : rs = 0.35Ω (Typ.) l Useful for Small Size Tuner MAXIMUM RATINGS (Ta = 25°C) CHARACTERISTIC


    Original     		PDF 1SV313

    1SV313

    Abstract: No abstract text available
    Text: 1SV313 TOSHIBA DIODE SILICON EPITAXIAL PLANAR TYPE 1SV313 VCO FOR UHF BAND RADIO Unit in mm High Capacitance Ratio : C0.5V/C2.5V = 2.5 Typ. Low Series Resistance : rs = 0.35Ω (Typ.) Useful for Small Size Tuner MAXIMUM RATINGS (Ta = 25°C) CHARACTERISTIC


    Original     		PDF 1SV313 1SV313

    Untitled

    Abstract: No abstract text available
    Text: 1SV313 TOSHIBA DIODE SILICON EPITAXIAL PLANAR TYPE 1SV313 VCO FOR UHF BAND RADIO Unit in mm High Capacitance Ratio : C0.5V/C2.5V = 2.5 Typ. Low Series Resistance : rs = 0.35Ω (Typ.) Useful for Small Size Tuner MAXIMUM RATINGS (Ta = 25°C) CHARACTERISTIC


    Original     		PDF 1SV313

    Untitled

    Abstract: No abstract text available
    Text: 1SV313 TOSHIBA DIODE SILICON EPITAXIAL PLANAR TYPE 1SV313 VCO FOR UHF BAND RADIO Unit in mm High Capacitance Ratio : C0.5V/C2.5V = 2.5 Typ. Low Series Resistance : rs = 0.35Ω (Typ.) Useful for Small Size Tuner MAXIMUM RATINGS (Ta = 25°C) CHARACTERISTIC


    Original     		PDF 1SV313 381E-16 00E-04 039E-11 00E-09

    1SV313

    Abstract: No abstract text available
    Text: 1SV313 TOSHIBA DIODE SILICON EPITAXIAL PLANAR TYPE 1SV313 VCO FOR UHF BAND RADIO Unit in mm z High Capacitance Ratio : C0.5V/C2.5V = 2.5 Typ. z Low Series Resistance : rs = 0.35Ω (Typ.) z Useful for Small Size Tuner ABSOLUTE MAXIMUM RATINGS (Ta = 25°C)


    Original     		PDF 1SV313 1SV313

    1SV313

    Abstract: No abstract text available
    Text: 20010110 1SV313 SPICE PARAMETER SPICE MODEL: BERKLEY SPICE2G6 DIODE MODEL DATA FORMAT: MODEL FORMAT SPICE SYMBOL: IS A ,RS(Ω) ,N(-) ,CJ0(F) ,VJ(V) ,M(-) ,BV(V) ,IBV(A) ,XTI(-) FREQUENCY RANGE: f = 0.1 GHz～3 GHz REVERSE VOLTAGE RANGE: VR = 0.5V ～ 4 V


    Original     		PDF 1SV313 0E-16 00E-04 2E-11 00E-09

    c05 10 diode

    Abstract: No abstract text available
    Text: 1SV313 TOSHIBA DIODE SILICON EPITAXIAL PLANAR TYPE 1SV313 VCO FOR UHF BAND RADIO Unit in mm High Capacitance Ratio : C0.5V/C2.5V = 2.5 Typ. Low Series Resistance : rs = 0.35Ω (Typ.) Useful for Small Size Tuner MAXIMUM RATINGS (Ta = 25°C) CHARACTERISTIC


    Original     		PDF 1SV313 c05 10 diode

    diode marking v6

    Abstract: marking v6 marking v6 diode diode v6 diode V6 on v6 diode DIODE V6 SMD Silicon Tuner V6 SMD 1SV313
    Text: Diodes SMD Type Silicon Epitaxial Planar Diode 1SV313 SOD-323 +0.05 0.85-0.05 +0.1 1.3-0.1 +0.05 0.3-0.05 +0.1 1.7-0.1 Unit: mm Features High Capacitance Ratio:C0.5V/C0.25V=2.1 Typ. Low Series Resistance:rs=0.35 +0.1 2.6-0.1 1.0max (Typ.) 0.375 0.475 +0.05


    Original     		PDF 1SV313 OD-323 diode marking v6 marking v6 marking v6 diode diode v6 diode V6 on v6 diode DIODE V6 SMD Silicon Tuner V6 SMD 1SV313

    1SV313

    Abstract: No abstract text available
    Text: 1SV313 TOSHIBA DIODE SILICON EPITAXIAL PLANAR TYPE 1SV313 VCO FOR UHF BAND RADIO Unit in mm l High Capacitance Ratio : C0.5V/C2.5V = 2.5 Typ. l Low Series Resistance : rs = 0.35Ω (Typ.) l Useful for Small Size Tuner MAXIMUM RATINGS (Ta = 25°C) CHARACTERISTIC


    Original     		PDF 1SV313 1SV313

    Untitled

    Abstract: No abstract text available
    Text: Product specification 1SV313 SOD-323 +0.05 0.85-0.05 +0.1 1.3-0.1 +0.05 0.3-0.05 +0.1 1.7-0.1 Unit: mm Features High Capacitance Ratio:C0.5V/C0.25V=2.1 Typ. Low Series Resistance:rs=0.35 +0.1 2.6-0.1 1.0max (Typ.) 0.375 0.475 +0.05 0.1-0.02 Useful for Small Size Tuner


    Original     		PDF 1SV313 OD-323

    marking code 62z

    Abstract: philips surface mount zener diode v6 marking 68m sot 23-5 1S2473 equivalent DIODE ROHM 3pin Marking A7 IPS302 marking 62z SOT23 diode S4 68a 1ss81 diode equivalent 1S2473 DIODE equivalent
    Text: 2001.05 Summary Application Example ANT The HVD141/142 features very small capacitance and on- resistance. These superior characteristics can provide isolation for the transmitting and receiving antenna switch sections and improve the insertion loss. TX RX


    Original     		PDF HVD141/142 HZU16 HZU10 HZU18 HZU11 HZU20 HZU12 HZU22 HZU13 HZU24 marking code 62z philips surface mount zener diode v6 marking 68m sot 23-5 1S2473 equivalent DIODE ROHM 3pin Marking A7 IPS302 marking 62z SOT23 diode S4 68a 1ss81 diode equivalent 1S2473 DIODE equivalent

    TOSHIBA RF Power Module S-AV24

    Abstract: diode varicap BB 112 varicap v147 2SC386A 2SK1310 3SK78 2sc5066 V101 varicap diode 1SV149 2SK192
    Text: 高周波用半導体デバイス ダイオード編 ● 当社は品質､信頼性の向上に努めておりますが､一般に半導体製品は誤作動した り故障することがあります｡当社半導体製品をご使用いただく場合は､半導体製


    Original     		PDF 050106DAD1 3SK114 3SK126 S1255 2SC2644 S-AV24 3SK115 3SK291 S1256 TOSHIBA RF Power Module S-AV24 diode varicap BB 112 varicap v147 2SC386A 2SK1310 3SK78 2sc5066 V101 varicap diode 1SV149 2SK192

    3SK73

    Abstract: S-AV24 3SK121 3SK114 TOSHIBA RF Power Module S-AV24 3SK101 S-AU82VL diode varicap BB 112 2SC2328 3SK112
    Text: 高周波用半導体デバイス パワーデバイス編 ● 当社は品質､信頼性の向上に努めておりますが､一般に半導体製品は誤作動した り故障することがあります｡当社半導体製品をご使用いただく場合は､半導体製


    Original     		PDF 050106DAD1 3SK114 3SK126 S1255 2SC2644 S-AV24 3SK115 3SK291 S1256 3SK73 S-AV24 3SK121 3SK114 TOSHIBA RF Power Module S-AV24 3SK101 S-AU82VL diode varicap BB 112 2SC2328 3SK112

    BB 505 Varicap Diode

    Abstract: s-av24 V101 varicap diode varicap v101 varicap v147 varicap v103 replacement for 2sc5088 horizontal transistors TOSHIBA S-AV29H Zener c9v 3SK114
    Text: Radio-Frequency Semiconductors Diodes Semiconductor Company The information contained herein is subject to change without notice. 021023_D TOSHIBA is continually working to improve the quality and reliability of its products. Nevertheless, semiconductor devices in general can malfunction or fail due to their inherent


    Original     		PDF 3SK114 3SK126 S1255 2SC2644 S-AV24 3SK115 3SK291 S1256 S-AV26H BB 505 Varicap Diode s-av24 V101 varicap diode varicap v101 varicap v147 varicap v103 replacement for 2sc5088 horizontal transistors TOSHIBA S-AV29H Zener c9v 3SK114

    FET K161

    Abstract: Transistor C2216 Transistor k161 k161 jfet k192a Transistor C2668 fet k241 k161 mosfet Transistor C2347 Transistor C1923
    Text: 高周波用半導体デバイス トランジスタ・FET・セルパック編 ● 当社は品質､信頼性の向上に努めておりますが､一般に半導体製品は誤作動した り故障することがあります｡当社半導体製品をご使用いただく場合は､半導体製


    Original     		PDF 050106DAD1 3SK114 3SK126 S1255 2SC2644 S-AV24 3SK115 3SK291 S1256 FET K161 Transistor C2216 Transistor k161 k161 jfet k192a Transistor C2668 fet k241 k161 mosfet Transistor C2347 Transistor C1923

    2sc5088 horizontal transistors

    Abstract: S-AV36 2SK192 mosfet data 3SK121 equivalent S-AV32 3SK121 fet 2SC2879 CB LINEAR CIRCUIT replacement for 2sc5088 horizontal transistors 3SK73 equivalent transistor 2sc2509
    Text: High-Frequency Semiconductors Power Devices Semiconductor Company The information contained herein is subject to change without notice. 021023_D The information contained herein is presented only as a guide for the applications of our products. No responsibility is assumed by TOSHIBA for any infringements of patents or


    Original     		PDF 3SK114 3SK126 S1255 2SC2644 2-AV24 3SK115 3SK291 S1256 2-AV26H 2sc5088 horizontal transistors S-AV36 2SK192 mosfet data 3SK121 equivalent S-AV32 3SK121 fet 2SC2879 CB LINEAR CIRCUIT replacement for 2sc5088 horizontal transistors 3SK73 equivalent transistor 2sc2509

    1S2473 DIODE equivalent

    Abstract: 1S2473 equivalent diode cross reference 1s2473 DIODE marking S4 59A marking 62N SOT23 1S2471 equivalent UHF/VHF TV Tuner HITACHI DIODE 1N4148 LL-34 DIODE ZENNER C25 1N52xx
    Text: Status List HITACHI DIODE Vol.16-4 2002.11 Topic - Miniature Flat Lead Package Diode “HSN278WK” .2 Variable Capacitance Diodes for Electronic Tuning .4, 5


    Original     		PDF HSN278WK" HZC10 HZC11 HZC12 HZC13 HZC15 HZC16 HZC18 HZC20 HZC22 1S2473 DIODE equivalent 1S2473 equivalent diode cross reference 1s2473 DIODE marking S4 59A marking 62N SOT23 1S2471 equivalent UHF/VHF TV Tuner HITACHI DIODE 1N4148 LL-34 DIODE ZENNER C25 1N52xx

    Untitled

    Abstract: No abstract text available
    Text: 1SV313 TOSHIBA 1 SV3 1 3 TOSHIBA DIODE VCO FOR UHF BAND RADIO • • SILICON EPITAXIAL PLANAR TYPE High Capacitance Ratio • C0.5 V / c 2.5 V = 2-5 TyP- : rs = 0.35 O (Typ.) Low Series Resistance Useful for Small Size Tuner M AXIM UM RATINGS (Ta = 25°C)


    OCR Scan     		PDF 1SV313

    Untitled

    Abstract: No abstract text available
    Text: 1SV313 TOSHIBA 1 SV3 1 3 TOSHIBA DIODE VCO FOR UHF BAND RADIO • • • SILICON EPITAXIAL PLANAR TYPE Unit in mm High Capacitance Ratio : Co 5 y / C2.5 y = 2.5 Typ. Low Series Resistance : rs = 0.35 ü, (Typ.) Useful for Small Size Tuner M AXIM UM RATINGS (Ta = 25°C)


    OCR Scan     		PDF 1SV313

    Untitled

    Abstract: No abstract text available
    Text: 1SV313 T O SH IB A TOSHIBA DIODE VCO FOR UHF BAND RADIO • • SILICON EPITAXIAL PLANAR TYPE 1 SV3 1 3 High Capacitance Ratio : C0.5V /C 2.5V = 2-5 TyP- : rs = 0.35 CI (Typ.) Low Series Resistance Useful for Small Size Tuner IV/I A V I l\ /I I IIV /I Dl \ A A“\ I TI II MM \ J« J


    OCR Scan     		PDF 1SV313

    s00f

    Abstract: 31cj
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    OCR Scan     		PDF ZES89 133HS 1SV313U I60V0£ i0-0002ian U33VH0S s00f 31cj

    1SV313

    Abstract: No abstract text available
    Text: 1SV313 TOSHIBA TOSHIBA DIODE VCO FOR UHF BAND RADIO • • • SILICON EPITAXIAL PLANAR TYPE 1 SV3 1 3 Unit in mm High Capacitance Ratio : Cq 5 y / C2 .5 y = 2.5 Typ. Low Series Resistance : rs = 0.35 ü, (Typ.) Useful for Small Size Tuner MAXIMUM RATINGS (Ta = 25°C)


    OCR Scan     		PDF 1SV313 1SV313

    Untitled

    Abstract: No abstract text available
    Text: 1SV313 TO SHIBA TOSHIBA DIODE SILICON EPITAXIAL PLANAR TYPE UV Í1Í VCO FOR UHF BAND RADIO • • High Capacitance Ratio : Co.5 V / C2.5 V = 2-5 Typ. : rs = 0.35 fl (Typ.) Low Series Resistance Useful for Small Size Tuner M A X IM U M RATINGS (Ta = 25°C)


    OCR Scan     		PDF 1SV313

    Untitled

    Abstract: No abstract text available
    Text: kM ia n - i d Vd iHVHO 33S •■•Z-l b L\¿-VQS •ON ‘9MUQ ‘ON IMVd m fs is n 66/91/80 2 J O 1 vQ s '3n 1 V a 0 d aZES89 0 3 N I X 310H 31TQ SNOISIA3tì a rq j SI M l iS 3HVN 31CJ s r r 01 / 8 0 / 6 6 1SV313U 1H0I3H » 0 V 1 S I 6 0 V 0 £ ' Z 3 N I3 V » 3 V d


    OCR Scan     		PDF ZES89 133HS 1SV313U i0-0002ian