1A 300V TRANSISTOR Search Results

Contextual Info: A Product Line of Diodes Incorporated Green FZT957 300V PNP MEDIUM POWER TRANSISTOR IN SOT223 Features Mechanical Data • BVCEO > -300V • • IC = -1A high Continuous Collector Current • • ICM = -2A Peak Pulse Current Case: SOT223 Case material: molded plastic. “Green” molding compound.

Contextual Info: A Product Line of Diodes Incorporated Green FZT857 300V NPN MEDIUM POWER TRANSISTOR IN SOT223 Features Mechanical Data •      BVCEO > 300V IC = 3.5A High Continuous Collector Current ICM = 5A Peak Pulse Current Very Low Saturation Voltage VCE sat < 155mV @ 1A

FZT957QTA

Abstract: FZT957
Contextual Info: A Product Line of Diodes Incorporated Green FZT957 300V PNP LOW SATURATION MEDIUM POWER TRANSISTOR IN SOT223 Features Mechanical Data • • • • • • • • • • • • • • • BVCEO > -300V IC = -1A high Continuous Collector Current ICM = -2A Peak Pulse Current

Contextual Info: nP48 SEM ICONDUCTOR FORWARD INTEKNADQNAL ELECTRONICS LTD, TECHNICAL DATA NPN HIGH VOLTAGE AND SWITCHING APPLICATIONS HIGH SUSTAINING VOLTAGE Vce(sus : 300V) 1A RATED COLLECTOR CURRENT EPITAXIAL SILICON TRANSISTOR Package: TO-220 ABSOLUTE MAXIMUM RATINGS at Tamb=25'c

SILICON TRANSISTOR CORP

Abstract: STP515 2N4114 2N4211 2n5609 transistor 2N5627 2N5678 2N5251 2n5609 stp6060
Contextual Info: SILICON TRANSISTOR CORP 47E D • 8E54022 OOOOflll t. « S T C 2 AMP T*VS*07 5 AMP Ic CONTINUOUS NPN TYPICAL SPECIFICATIONS VCEO To 300V hFE 20-120 PACKAGE y ^ « 1A 5V r a TO-257 I PNP v c e o t o io o v VCEO To 300V VCEO To 100V h FE20-120(a1A 5 V hFE 20-120 2 .5 A 5 V

FZT857

Abstract: FZT957 FZT958 DSA003675
Contextual Info: SOT223 PNP SILICON PLANAR HIGH CURRENT HIGH PERFORMANCE TRANSISTORS FZT957 FZT958 ISSUE 3 - JANUARY 1996 FEATURES * 1 Amp continuous current * Up to 2 Amps peak current * Very low saturation voltage * Excellent gain characteristics specified up to 1 Amp

voltage regulators 300v dc

Abstract: LCC3 transistors 1A 300V TRANSISTOR NPN Transistor 450v 1A npn transistors 300V 0,5a transistor 5w
Contextual Info: 2N3439 2N3440 HIGH VOLTAGE NPN TRANSISTORS MECHANICAL DATA Dimensions in mm inches 8.89 (0.35) 9.40 (0.37) 7.75 (0.305) 8.51 (0.335) FEATURES 6.10 (0.240) 6.60 (0.260) 12.70 (0.500) min. • DUAL SILICON PLANAR EPITAXIAL NPN TRANSISTOR • HIGH VOLTAGE 0.89

Contextual Info: SOT223 PNP SILICON PLANAR HIGH CURRENT HIGH PERFORMANCE TRANSISTORS ISSUE 3 -JA N U A R Y 1996 FEATURES * * 1 Am p continuous current Up to 2 Am ps peak current * * Very lo w saturation voltage Excellent gain characteristics specified up to 1 Am p COMPLEMENTARY TYPES -

1A 300V TRANSISTOR

Abstract: 300V transistor npn 2a NTE94 300V regulator TRANSISTOR 187
Contextual Info: NTE94 Silicon NPN Transistor High Voltage Switch Description: The NTE94 is a silicon NPN transistor in a TO3 type case designed for medium to high voltage inverters, converters, regulators, and switching circuits. Features: D High Collector–Emitter Voltage: VCEO = 300V

ZTX957

Abstract: TO-1 amps pnp transistor DSA003780
Contextual Info: PNP SILICON PLANAR MEDIUM POWER HIGH CURRENT TRANSISTOR ZTX957 ELECTRICAL CHARACTERISTICS at Tamb = 25°C PARAMETER SYMBOL Base-Emitter Turn-On Voltage VBE(on) MIN. TYP. MAX. UNIT CONDITIONS. -710 -850 mV IC=-1A, VCE=-10V* Static Forward Current Transfer Ratio

1A 300V TRANSISTOR

Contextual Info: KSC5402D/KSC5402DT NPN Silicon Transistor, Planar Silicon Transistor Features • • • • • • D-PAK High Voltage High Speed Power Switch Application Wide Safe Operating Area Built-in Free Wheeling Diode Suitable for Electronic Ballast Application Small Variance in Storage Time

Contextual Info: KSC5338D/KSC5338DW NPN Triple Diffused Planar Silicon Transistor Features • • • • • • High Voltage Power Switch Switching Application Wide Safe Operating Area Built-in Free-Wheeling Diode Suitable for Electronic Ballast Application Small Variance in Storage Time

LB-008

Abstract: lc08a LB 125 transistor Triple Diffused
Contextual Info: NPN TRIPLE DIFFUSED PLANAR SILICON TRANSISTOR KSC5338D/KSC5338DW HIGH VOLTAGE HIGH SPEED POWER SWITCH APPLICATION • • • • • Wide Safe Operating Area Built-in Free-Wheeling Diode Suitable for Electronic Ballast Application Small Variance in Storage Time

NPN Transistor 1.5A 300V

Abstract: QS 100 NPN Transistor 200H NPN Transistor VCEO 1000V
Contextual Info: KSC5402D/KSC5402DT NPN Silicon Transistor, Planar Silicon Transistor Features • • • • • • D-PAK High Voltage High Speed Power Switch Application Wide Safe Operating Area Built-in Free Wheeling Diode Suitable for Electronic Ballast Application Small Variance in Storage Time

Contextual Info: KSC5502 NPN Planar Silicon Transistor High Voltage Power Switch Mode Application • • • Small Variance in Storage Time Wide Safe Operating Area Suitable for ElectronicBallast Application Equivalent Circuit C B 1 TO-220 E 1.Base Absolute Maximum Ratings *

J5502

Abstract: KSC5502TU KSC5502 transistor npn 12V 1A Collector Current NPN Transistor 600V TO-220 vbe 12v, vce 600v NPN Transistor
Contextual Info: KSC5502 NPN Planar Silicon Transistor High Voltage Power Switch Mode Application • Small Variance in Storage Time • Wide Safe Operating Area • Suitable for Electronic Ballast Application Equivalent Circuit C B 1 TO-220 E 1.Base Absolute Maximum Ratings *

Contextual Info: SOT223 PNP SILICON PLANAR HIGH CURRENT HIGH PERFORMANCE TRANSISTORS ISSUE 3 - JANUARY 1996 FEATURES * * 1 A m p continuous current Up to 2 A m p s peak current * * Very low saturation voltage Excellent gain characteristics specified up to 1 A m p C O M PLEM EN TAR Y TYPES -

Contextual Info: NPN TRIPLE DIFFUSED PLANAR SILICON TRANSISTOR KSC5338D/KSC5338DW HIGH VOLTAGE HIGH SPEED POWER SWITCH APPLICATION * * * * * TO-220 Wide Safe Operating Area Built-in Free-Wheeling Diode Suitable for Electronic Ballast Application Small Variance in Storage Time

JANS2N2484

Abstract: JANS2N3439UA JANS2N3637 transistors SMD npn JANS2N5339U3 JANS2N7373
Contextual Info: JANS QUALIFIED BI-POLAR TRANSISTORS* Part # JANS QUALIFIED BI-POLAR TRANSISTORS* Type Voltage hFE @ Ic Rated Ic Package JANS QUALIFIED BI-POLAR TRANSISTORS* JANS QUALIFIED BI-POLAR TRANSISTORS* Part # Slash Sheet Type Voltage hFE @ Ic Rated Ic Package JANS2N930

Contextual Info: KSC5338D/KSC5338DW NPN Triple Diffused Planar Silicon Transistor • • • • • • High Voltage Power Switch Switching Application Wide Safe Operating Area Built-in Free-Wheeling Diode Suitable for Electronic Ballast Application Small Variance in Storage Time

A1KA

Contextual Info: SOT223 PNP SILICON PLANAR HIGH CURRENT HIGH PERFORMANCE TRANSISTORS FZT957 FZT958 ISSUE 3 - JANUARY 1996 FEATURES * 1 Amp continuous current * Up to 2 Amps peak current * Very low saturation voltage * Excellent gain characteristics specified up to 1 Amp

E80276

Contextual Info: MITSUBISHI TRANSISTOR MODULES QM50E2Y/E3Y-H MEDIUM POWER SWITCHING USE INSULATED TYPE QM50E2Y/E3Y-H • • • • • IC Collector current . 50A VCEX Collector-emitter voltage . 600V hFE DC current gain. 75

nte175

Abstract: NTE38
Contextual Info: NTE38 PNP & NTE175 (NPN) Silicon Complementary Transistors High Voltage, Medium Power Switch Description: The NTE38 (PNP) and NTE175 (NPN) complementary silicon transistors are designed for high– speed switching and linear amplifier applications for high–voltage operational amplifiers, switching

pnp 500v

Abstract: vbe 10v, vce 500v NPN Transistor NTE175 NTE38
Contextual Info: NTE38 PNP & NTE175 (NPN) Silicon Complementary Transistors High Voltage, Medium Power Switch TO66 Type Package Description: The NTE38 (PNP) and NTE175 (NPN) are complementary silicon transistors in a TO66 type package designed for high−speed switching and linear amplifier applications for high−voltage operational amplifiers, switching regulators, converters, inverters, deflection stages, and high fidelity amplifiers.