1AK SERIES Search Results

Contextual Info: MMBT3904K NPN Epitaxial Silicon Transistor MMBT3904K NPN Epitaxial Silicon Transistor General Purpose Transistor Marking 3 1AK 2 1 SOT-23 1. Base 2. Emitter 3. Collector Absolute Maximum Ratings Ta = 25°C unless otherwise noted Symbol Parameter Value Units

transistor 1AK

Abstract: 1AK marking transistor MMBT3904K 1ak transistor
Contextual Info: MMBT3904K NPN Epitaxial Silicon Transistor MMBT3904K NPN Epitaxial Silicon Transistor General Purpose Transistor Marking 3 1AK 2 1 SOT-23 1. Base 2. Emitter 3. Collector Absolute Maximum Ratings Ta = 25°C unless otherwise noted Symbol Parameter Value Units

transistor 1AK

Abstract: MMBT3904K 1ak transistor 1AK marking transistor
Contextual Info: MMBT3904K NPN Epitaxial Silicon Transistor General Purpose Transistor Marking 3 1AK 2 1 SOT-23 1. Base 2. Emitter 3. Collector Absolute Maximum Ratings Ta = 25°C unless otherwise noted Symbol Parameter Value Units VCBO Collector-Base Voltage 60 V VCEO Collector-Emitter Voltage

ZJSR5101-471

Abstract: 1AK Series ZJSR5101-333 ZJSR5101 99 marking ZJSR5101-102 ZJSR5101-331TA
Contextual Info: FILTERS EMI ZJSR SERIES T-drcuit with ferrite beads. Packaging Marking See Product Summary page 99 Capacitance Value and TDK Logo Basic Characteristics Rated voltage Insulation resistance (M il) (50 Vdc for 1 minute) 10000 min. 50 DC (V) DC resistance (fl) between terminals and d>

Contextual Info: HALF SIZE CRYSTAL CAN RELAY 2 AMPERE DPDT AC COIL Series AK Product Description This standard half size crystal can relay series, offer switching capability of low level signal up to 2 amperes under the most extreme environmental conditions. The following construction features ensure the highest reliability in extreme environments:

OEN relays

Abstract: led free 68-24-2AE diode DIN 12VDC30A 192 1C 12 single pole 24 vdc 110vac BSP 280 112502 JSs diode
Contextual Info: CLASSIFICATION MODEL UNIT STYLE DIMENSION WEIGHT II SIGNAL RELAYS 42 46 52 56 PC PC PC DIP PC DIP 20 x 7.2 x 7.5 20.5x12x16 15.5x11 gms X 11.5 20.2x9.9x12 HERMETICALLY SEALED RELAYS SIGNAL RELAYS 3.5 77 36 PC POWER RELAYS 30 43 61 65 PC/Solder Hook/Plug in

AC3-OO2H-00

Abstract: AK 3055
Contextual Info: 949-2012.qxp:QuarkCatalogTempNew 8/29/12 1:19 PM Page 949 10 Modular Power Supplies RoHS 300/450/650/900 Watt Modular Power Supplies Configurable platform allows millions of possible output configurations with 1-12 outputs from 2.0-56 VDC Call Allied to discuss your required configuration . Features Include:

1ak smd

Abstract: P44 SMD smd code E0 KXJ 35 3M-40 h1jh 357-570
Contextual Info: WPI " Connectors Accessories and Cable Assemblies termination tooling for 17/117/220 series 4. in $ * H i0 r t to o l rnmnval bool 3 5 6 -2 0 0 - ioni H andle gnty ¡jd e c i 00TOC1 inwrhcrfi v nefnouai dm from c ra rt 3 5 0 -3 7 1 senea h an d crim p tool

Contextual Info: HP VEE Visual Engineering Environment HP E2111D Technical Specifications HP VEE 3.2 for Series 700/HP-UX 9.0 & 10.0 Cut test development time Collect and analyze data quickly Modify programs quickly and reduce time to market D Leverage existing measurement programs with

B12 GDM

Abstract: BYS045 GENERAL SEMICONDUCTOR MARKING SJ SMA s104 68A BYS-045 kvp 62a GENERAL SEMICONDUCTOR MARKING mJ SMA ED BYS209 S4 68A S104 8a
Contextual Info: PDD Marking Vishay General Semiconductor PDD Marking AXIAL MARKING Cathode Band Polarity GP15M 0621X Cathode Band Part Number Logo/Date Code Polarity SB340 0621X Part Number/ Date Code/Logo DATE CODE DATE CODE 06 21 X 06 21 X Factory Designator DO-204AC/ DO-204AL

Contextual Info: HP VEE Visual Engineering Environment HP E2120C Technical Specifications HP VEE 3.12 for Windows 3.1 Cut test development time Collect and analyze data quickly Modify programs quickly and reduce time to market D Leverage existing measurement programs with

Contextual Info: HP VEE Visual Engineering Environment HP E2112D Technical Specifications HP VEE 3.2 for Solaris Cut test development time Collect and analyze data quickly Modify programs quickly and reduce time to market D Leverage existing measurement programs with

OV07251

Abstract: Buss M151 varistor buss M200-EX M461 M581-DG M251-CU M400D M151-EF M102D
Contextual Info: Metal Oxide Varistors Bussmann 05 S e rie s to 25 S e rie s - Through Hole M O V’s Maximum Transient Pow er D issipation Ratings Pm Series Pm-watts 0.15 0.25 0.3 0.4 0.45 0.5 05 07 08 10 11 12 Series Pm-watts 0.6 0.6 0.8 1.0 1.2 14 16 18 20 25 Standard Marking:

REL531

Abstract: rel 531 abb REL531 microcontroller based substation monitoring using pulse echo in power cable fault locator REL531 application microcontroller based substation monitoring using with parameters 3 pole circuit breaker ABB microcontroller based substation monitoring and c REL521
Contextual Info: REL 531 * 1.0 Line di:stance protection 1 MAK 506 004-BEN Page' Oclober 1997 Changed since April 1997 Dala subjecl to change wilhoul nolice terminal ABB Network Partner SE 95 02 15 \ I Features .Simultaneous measurement of the phasephase and phase-earth loop impedances with in

TRANSISTOR SMD MARKING CODE 1BW

Abstract: SmD TRANSISTOR 1bw transistor SMD 5BW TRANSISTOR SMD MARKING CODE 1AM 5bw smd smd code marking 5bw KL SN 102 94v-0 smd transistor marking 3bw smd transistor 1AM yx 801
Contextual Info: VISHAY INTERTECHNOLOGY , INC . INTERACTIVE data book transient voltage suppressors vishay general semiconductor vse-db0002-0710 Notes: 1. To navigate: a Click on the Vishay logo on any datasheet to go to the Contents page for that section. Click on the Vishay logo on any Contents

VEB mikroelektronik

Abstract: mikroelektronik DDR aktive elektronische bauelemente ddr TESLA Tesla katalog 74c915 V4093D 4502c mosfet 4040BC K561TM2
Contextual Info: DATEN DIGITALER INTEGRIERTER SCHALTKREISE AMATEUR BIBLIOTHEK Klaus K.Streng Streng, Klaus K.: Daten digitaler integrierter Schaltkreise CMOS-Schaltkreise . Berlin: Militirverlag der DDR. 1987. - 192 S.: 314 Bilder (Amateurbibliothek) ISBN 3-327-00360-2 l. Auflage, 1987

TRIODE 6H13C

Abstract: Triode 6h7c 6H13C TUBE 6j1 V148T TRIODE 6C4C "Receiving Tubes" book 6H7C 6H16B 6H9c triode
Contextual Info: nPHEMHO-yCHJIHTEJIbHblE ilAMflbl RECEIVING TUBES v\n/y B /O „ M A U in P M B O P H H T O P r“ CCCP M OCKBA nPHEMHO-yCMJlMTEnbHblE riAM nbi RECEIVING TUBES K huto 2 Book 2 B/O „MALUnPMBOPMHTOPr“ CCCP MOCKBA V/O “ MASHPRIBORINTORG” USSR M O SCO W

aeg diode Si 61 L

Abstract: aeg diodes D6 SGS Transistors BC23B SILICONIX U315 MZ306 BY126 bcv59 ac128 2N3680
Contextual Info: Semiconductor Data Book Semiconductor Data Book Characteristics of approx. 10 000 Transistors, FETs, UJTs, Diodes, Rectifiers, Optical Semiconductors, Triacs and SCRs, Compiled by A. M. Ball Head of Physics, Teign School Newnes Technical Books Newnes Technical Books