TLP521-1BL-SW
Abstract: Isocom Components E72HA2.2B-L
Text: ISOCOM COMPONENTS TLP521-1BL-SW, TLP521-2BL-SW, TLP521-4BL-SW DRAFT DESCRIPTION The TLP521-1BL-SW, TLP521-2BL-SW and TLP521-4BL-SW series of optically coupled isolators consist of infrared light emitting diodes and NPN silicon photo transistors in a space efficient Dual In
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TLP521-1BL-SW,
TLP521-2BL-SW,
TLP521-4BL-SW
TLP521-2BL-SW
TLP521-4BL-SW
TLP521-1BL-SW
TLP521-2BL-SW
5300VRMS
E91231
TLP521-1BL-SW
Isocom Components
E72HA2.2B-L
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TLP621 smd
Abstract: No abstract text available
Text: ISOCOM COMPONENTS TLP621-1BL-SW, TLP621-2BL-SW, TLP621-4BL-SW DRAFT DESCRIPTION The TLP621-1BL-SW, TLP621-2BL-SW and TLP621-4BL-SW series of optically coupled isolators consist of infrared light emitting diodes and NPN silicon photo transistors in a space efficient Dual In
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TLP621-1BL-SW,
TLP621-2BL-SW,
TLP621-4BL-SW
TLP621-2BL-SW
TLP621-4BL-SW
TLP621-1BL-SW
TLP621-2BL-SW
5300VRMS
E91231
TLP621 smd
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zld0500
Abstract: ZSR500 SW640 diode 1BL
Text: 5.0 VOLT ULTRA LOW DROPOUT REGULATOR ZLD0500 ISSUE 1- DECEMBER 1995 FEATURES The ZLDO Series low dropout linear regulators operate with an exceptionally low dropout voltage, typically only 30mV with a load current of 10OmA. The ragulatorseries features output voltages in the range 3.3 to 18 volts, this
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ZLD0500
10OmA.
100mA
100mV
300MA
630pA
ZLD0500
ZSR500
SW640
diode 1BL
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Untitled
Abstract: No abstract text available
Text: N AMER PHILIPS/DISCRETE b=JE D bbS3*1Bl QQBDbDS fiT? « A P X Philips Semiconductors Product Specification PowerMOS transistor GENERAL DESCRIPTION N-channel enhancement mode field-effect power transistor in a plastic envelope. The device is intended for use in
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O220AB
BUK453-100A/B
BUK453
-100A
bb53T31
Joi777
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hbc91
Abstract: A2KB A2hb
Text: Duodiode - Triode fUr Empfangsgleichrichtung und ÄPVerstärkung i hz VO N“ <*• i <*• «O a1B Gewicht ca. 7,5 g l.Helgerwerte für Serienspeleung ca. Heizspannung Heizstrom Oxydkatode, indirekt geheiet 12,6 V 0,15 A 2.Betriebawerte a Diodenaystea als Demodulator
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HBC91
a23lC
hbc91
A2KB
A2hb
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diode 1BL
Abstract: U17E
Text: •I Bi CONTROLLED AVALANCHE DIODE U17 Unit in mm inch ■4$ « ■FEATURES • T ra n sie n t surge voltag e protection. • Diffused-junction. G lass passivated encapsulated. and ■ABSOLUTE MAXIMUM RATINGS Items Repetitive Peak Reverse Voltage Peak Reverse Power
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10/is\
25mon
diode 1BL
U17E
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Buf725d
Abstract: transistor BUF725D
Text: T e m ic BUF725D Semiconductors Silicon NPN High Voltage Switching Transistor Features • • • • • • • • • • Monolithic integrated C-E-free-wheel diode Simple-sWitch-Off Transistor SWOT HIGH SPEED technology Planar passivation 100 kHz switching rate
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BUF725D
D-74025
18-Jul-97
Buf725d
transistor BUF725D
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transistor SMD LOA
Abstract: 9915 transistor TD13005D 1b.1 smd transistor ir 9911
Text: Temic Semiconductors TD13004D • TD13005D Silicon NPN High Voltage Switching Transistor Features Monolithic integrated C-E-free-wheel diode HIGH SPEED technology Planar passivation Very short switching times Very low switching losses Very low dynamic saturation
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TD13004D
TD13005D
TD13005D
TD13004D
transistor SMD LOA
9915 transistor
1b.1 smd transistor
ir 9911
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74LVX00MSCX
Abstract: No abstract text available
Text: LVXOO National ÆM Semiconductor 74 LVXOO Low Voltage Quad 2-Input NAND Gate General Description Features The LVXOO contains four 2-input NAND gates. The inputs tolerate voltages up to 7V allowing the interface of 5V sys tems to 3V systems. • Input voltage level translation from 5V to 3V
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74LVX
74LVXOO
74LVX00
74LVX00MSCX
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diode 1BL
Abstract: WESTINGHOUSE dc motor transistor fag 35 powerex kd powerex kd22 kd2245 kd221K WESTINGHOUSE transistor 1BL diode
Text: y i 7 294621 POWERËX INC fag D e | TaiMtai OODOTEb 1 | Dual Darlington TRANSISTOR Modules 75 Amperes 4 5 0 /1 OOO Volts Dim A B C D E F G H K M Inches 3.700 Max . 3.150+ .020 .79 1.34 Max 1.06 .315 1.220 Max .256 .571 € Millimeters 94 Max 80 ± 0 .5 20
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KD22457510
KD221K7510
T-33-35
diode 1BL
WESTINGHOUSE dc motor
transistor fag 35
powerex kd
powerex kd22
kd2245
kd221K
WESTINGHOUSE transistor
1BL diode
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Untitled
Abstract: No abstract text available
Text: f j j P E R IC O PI5C16214 PI5C162214 25Q M ill ill ill ill ill ill ill ill ill ill ill ill ill ill ill ill ill ill ill ill ill . 12-Bit, 3-To-l Bus-Select Switch
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PI5C16214
PI5C162214
12-Bit,
56-pin
240-mil
300-mil
S7040A
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Untitled
Abstract: No abstract text available
Text: May 1996 national Semiconductor~ NDS9958 Dual N & P-Channel Enhancement Mode Field Effect Transistor General Description Features These dual N- and P-Channel enhancement mode • N-Channel 3.5A, 20V, RDS 0N| = 0.10 @ VGS = 10V. power field effect transistors are produced using
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NDS9958
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Untitled
Abstract: No abstract text available
Text: PRELIMINARY 3.3V, Hot Insertion, 20-Bit FET BusSwitch w/Precharged Outputs Product Features: • Near Zero Propagation Delay • 5 il Switches Connect Between Two Ports Product Description: • Fast Switching Speed: 4.5ns max. Pericom Semiconductor’s PI3B series of logic circuits are produced
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48-pin
150-mil
240-mil
300-mil
20-Bit
PI3B16215
20-bits
PS8190A
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Untitled
Abstract: No abstract text available
Text: National M a y 1996 Semiconductor' NDS9943 Dual N & P-Channel Enhancement Mode Field Effect Transistor General Description Features These dual N- and P-Channel enhancement mode power field effect transistors are produced using National's proprietary, high cell density, DMOS
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NDS9943
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74ABT16245
Abstract: ABT16245 MB2245DL
Text: NAPC/PHILIPS bSE D SENICON» • bb53T2M DOflbhBl 74^ M S I C 3 Philips Semiconductors Advanced BiCMOS Products Preliminary specification Dual octal transceivers with direction pins 3-State 74ABT16245 QUICK REFERENCE DATA FEATURES • 16-bit bidirectional bus interface
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bb53T24
DDflbh31
74ABT16245
16-bit
A/-32mA
500mA
74ABT16245
500ns
ABT16245
MB2245DL
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Untitled
Abstract: No abstract text available
Text: HIGH-SPEED BiCMOS 10-BIT MEMORY LATCHES IDT54/74FBT2841A IDT54/74FBT2841B Integrated Device Technology, Inc. FEATURES: DESCRIPTION: • 2 5 ii output resistors reduce overshoot and undershoot when driving MOS RAMs • Significant reduction in ground bounce from standard
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IDT54/74FBT2841A
10-BIT
IDT54/74FBT2841B
MIL-STD-683,
Rl-5000
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1BL o.h Diode
Abstract: 1BL diode
Text: IDT74FCT3574/A 3.3V CMOS OCTAL D REGISTERS 3-STATE FEATURES: DESCRIPTION: • 0.5 MICRON CMOS Technology • ESD > 2000V per MIL-STD-883, Method 3015; > 200V using machine model (C = 200pF, R = 0) • Extended commercial range ot -40°C to +85°C • V cc = 3.3V ±0.3V, Normal Range or
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IDT74FCT3574/A
MIL-STD-883,
200pF,
FCT3574/A
P20-1)
S020-2)
S020-9)
1BL o.h Diode
1BL diode
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Untitled
Abstract: No abstract text available
Text: jdt 3.3V CM O S OCTAL IDT74FCT3245/A BI D IR E C TIO N A L T R A N S C E IV E R S In te g ra te d D evice T ech n o lo g y , Inc. FEATURES: DESCRIPTION: • 0 .5 M IC R O N C M O S Technology • E S D > 2 0 0 0 V per M IL -S T D -8 8 3 , Method 3015; > 2 0 0 V using m achine model C = 200p F, R = 0)
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IDT74FCT3245/A
IDT74FCT3245/A
P20-1)
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Untitled
Abstract: No abstract text available
Text: 3.3V CMOS 18-BIT TO 36-BIT REGISTERED BUS EXCHANGER WITH 3-STATE OUTPUTS AND BUS-HOLD FEATURES: - The ALVCHG162282 provides synchronous data exchange between the two ports. Data is stored in the internal regis ters on the low-to-high transition of the clock CLK input.
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18-BIT
36-BIT
250ps
MIL-STD-883,
200pF,
IDT74ALVCHG162282
ALVCHG162282:
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cmos 4072
Abstract: No abstract text available
Text: IDT74LVCH1 6827 A ADVANCE INFORMATION 3.3V FAST CMOS 20-BIT BUFFERS WITH 5 VOLT T O L E R A N T I/O FEATURES: DESCRIPTION: • Com m on featu res: - Typical tSK o (O utput Skew) < 250ps - ESD > 2000V per M IL-STD -883, M ethod 3015; > 200V using m achine model (C = 200pF, R = 0)
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20-BIT
IDT74LVCH1
250ps
200pF,
6827A:
cmos 4072
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SN75183
Abstract: DS7830 DS8830 SN55182 SN55183 SN75182
Text: SN55183, SN75183 DUAL DIFFERENTIAL LINE DRIVERS SLLS093C-OCTOBER 1972- REVISED MARCH 1997 Single 5-V Supply SN 5S183 . . . J OR W PACKAGE S N 75183 . . . N PACKAGE TOP V IE W Differential Line Operation Dual Channels TTL Compatibility Short-Circuit Protection of Outputs
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SN55183,
SN75183
SLLS093C-OCTOBER
SN55182
SN75182
DS7830
DS8830
SN55183
SN75183
DS8830
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Untitled
Abstract: No abstract text available
Text: 3.3 V CMOS 18-BIT TO 36-BIT REGISTERED BUS EXCHANGER WITH 3-STATE OUTPUTS AND BUS-HOLD FEATURES: - DESCRIPTION: 0.5 MICRON CMOS Technology Typical tsK o (Output Skew) < 250ps ESD > 2000V per MIL-STD-883, Method 3015; > 200V using machine model (C = 200pF, R = 0)
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18-BIT
36-BIT
250ps
MIL-STD-883,
200pF,
IDT74ALVCH16282
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2a419
Abstract: 1BL o.h Diode
Text: TO SHIBA ADVANCE INFORMATION TC74VCX16646FT TOSHIBA CMOS DIGITAL INTEGRATED CIRCUIT SILICON MONOLITHIC Tf74UfY1fifidRFT LOW VOLTAGE 16-BIT BUS TRANSCEIVER I REGISTER WITH 3.6V TOLERANT INPUTS AND OUTPUTS The TC74VCX16646FT is a high parformance CMOS 16-bit
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TC74VCX16646FT
Tf74UfY1fifidRFT
16-BIT
TC74VCX16646FT
TSSOP56-P-0061
B350S3B3B
2a419
1BL o.h Diode
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74LVC4245
Abstract: 74LVC4245D 74LVC4245PW 74LVC4245DB
Text: Philips Semiconductors Product Specification Octal dual supply translating transceiver; 3-state FEATURES • • • • • QUICK REFERENCE DATA GND = 0 V; T amb = 25°C; tr = t, < 2.5 ns Wide supply voltage range 3 Volt port: 1.5 to 3.6 V 5 Volt port: 1.5 to 5.5 V
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74LVC4245
74LVC4is
74LVC4245
74LVC4245D
74LVC4245PW
74LVC4245DB
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