1BL DIODE Search Results

TLP521-1BL-SW

Abstract: Isocom Components E72HA2.2B-L
Contextual Info: ISOCOM COMPONENTS TLP521-1BL-SW, TLP521-2BL-SW, TLP521-4BL-SW DRAFT DESCRIPTION The TLP521-1BL-SW, TLP521-2BL-SW and TLP521-4BL-SW series of optically coupled isolators consist of infrared light emitting diodes and NPN silicon photo transistors in a space efficient Dual In

TLP621 smd

Contextual Info: ISOCOM COMPONENTS TLP621-1BL-SW, TLP621-2BL-SW, TLP621-4BL-SW DRAFT DESCRIPTION The TLP621-1BL-SW, TLP621-2BL-SW and TLP621-4BL-SW series of optically coupled isolators consist of infrared light emitting diodes and NPN silicon photo transistors in a space efficient Dual In

Contextual Info: N AMER PHILIPS/DISCRETE b=JE D bbS3*1Bl QQBDbDS fiT? « A P X Philips Semiconductors Product Specification PowerMOS transistor GENERAL DESCRIPTION N-channel enhancement mode field-effect power transistor in a plastic envelope. The device is intended for use in

hbc91

Abstract: A2KB A2hb
Contextual Info: Duodiode - Triode fUr Empfangsgleichrichtung und ÄPVerstärkung i hz VO N“ <*• i <*• «O a1B Gewicht ca. 7,5 g l.Helgerwerte für Serienspeleung ca. Heizspannung Heizstrom Oxydkatode, indirekt geheiet 12,6 V 0,15 A 2.Betriebawerte a Diodenaystea als Demodulator

diode 1BL

Abstract: U17E
Contextual Info: •I Bi CONTROLLED AVALANCHE DIODE U17 Unit in mm inch ■4$ « ■FEATURES • T ra n sie n t surge voltag e protection. • Diffused-junction. G lass passivated encapsulated. and ■ABSOLUTE MAXIMUM RATINGS Items Repetitive Peak Reverse Voltage Peak Reverse Power

Buf725d

Abstract: transistor BUF725D
Contextual Info: T e m ic BUF725D Semiconductors Silicon NPN High Voltage Switching Transistor Features • • • • • • • • • • Monolithic integrated C-E-free-wheel diode Simple-sWitch-Off Transistor SWOT HIGH SPEED technology Planar passivation 100 kHz switching rate

transistor SMD LOA

Abstract: 9915 transistor TD13005D 1b.1 smd transistor ir 9911
Contextual Info: Temic Semiconductors TD13004D • TD13005D Silicon NPN High Voltage Switching Transistor Features Monolithic integrated C-E-free-wheel diode HIGH SPEED technology Planar passivation Very short switching times Very low switching losses Very low dynamic saturation

74LVX00MSCX

Contextual Info: LVXOO National ÆM Semiconductor 74 LVXOO Low Voltage Quad 2-Input NAND Gate General Description Features The LVXOO contains four 2-input NAND gates. The inputs tolerate voltages up to 7V allowing the interface of 5V sys­ tems to 3V systems. • Input voltage level translation from 5V to 3V

diode 1BL

Abstract: WESTINGHOUSE dc motor transistor fag 35 powerex kd powerex kd22 kd2245 kd221K WESTINGHOUSE transistor 1BL diode
Contextual Info: y i 7 294621 POWERËX INC fag D e | TaiMtai OODOTEb 1 | Dual Darlington TRANSISTOR Modules 75 Amperes 4 5 0 /1 OOO Volts Dim A B C D E F G H K M Inches 3.700 Max . 3.150+ .020 .79 1.34 Max 1.06 .315 1.220 Max .256 .571 € Millimeters 94 Max 80 ± 0 .5 20

Contextual Info: f j j P E R IC O PI5C16214 PI5C162214 25Q M ill ill ill ill ill ill ill ill ill ill ill ill ill ill ill ill ill ill ill ill ill . 12-Bit, 3-To-l Bus-Select Switch

Contextual Info: May 1996 national Semiconductor~ NDS9958 Dual N & P-Channel Enhancement Mode Field Effect Transistor General Description Features These dual N- and P-Channel enhancement mode • N-Channel 3.5A, 20V, RDS 0N| = 0.10 @ VGS = 10V. power field effect transistors are produced using

Contextual Info: PRELIMINARY 3.3V, Hot Insertion, 20-Bit FET BusSwitch w/Precharged Outputs Product Features: • Near Zero Propagation Delay • 5 il Switches Connect Between Two Ports Product Description: • Fast Switching Speed: 4.5ns max. Pericom Semiconductor’s PI3B series of logic circuits are produced

Contextual Info: National M a y 1996 Semiconductor' NDS9943 Dual N & P-Channel Enhancement Mode Field Effect Transistor General Description Features These dual N- and P-Channel enhancement mode power field effect transistors are produced using National's proprietary, high cell density, DMOS

laser diode toshiba

Abstract: Semiconductor Laser International Corporation PT 4107 lm 6492 Laser Diode 14 pin DIL
Contextual Info: OSHIBA LASER/FBR OPTIC Q1 D • TGT7SSS 001bl3D fl « T O S t T-41-07 TOSHIBA FOR OPTICAL COMMUKICATIONS i DFB Laser Modules with Optical Isolator T0LD332S/333S (1.31/(Hi) T0LD382S/383S (1.55/ m) T0LD332S/333S T0LD382S/383S L Applications Features •L ig h t source for trunk line, long-distance,

Contextual Info: HIGH-SPEED BiCMOS 10-BIT MEMORY LATCHES IDT54/74FBT2841A IDT54/74FBT2841B Integrated Device Technology, Inc. FEATURES: DESCRIPTION: • 2 5 ii output resistors reduce overshoot and undershoot when driving MOS RAMs • Significant reduction in ground bounce from standard

1BL o.h Diode

Abstract: 1BL diode
Contextual Info: IDT74FCT3574/A 3.3V CMOS OCTAL D REGISTERS 3-STATE FEATURES: DESCRIPTION: • 0.5 MICRON CMOS Technology • ESD > 2000V per MIL-STD-883, Method 3015; > 200V using machine model (C = 200pF, R = 0) • Extended commercial range ot -40°C to +85°C • V cc = 3.3V ±0.3V, Normal Range or

zld0500

Abstract: ZSR500 SW640 diode 1BL
Contextual Info: 5.0 VOLT ULTRA LOW DROPOUT REGULATOR ZLD0500 ISSUE 1- DECEMBER 1995 FEATURES The ZLDO Series low dropout linear regulators operate with an exceptionally low dropout voltage, typically only 30mV with a load current of 10OmA. The ragulatorseries features output voltages in the range 3.3 to 18 volts, this

Contextual Info: jdt 3.3V CM O S OCTAL IDT74FCT3245/A BI D IR E C TIO N A L T R A N S C E IV E R S In te g ra te d D evice T ech n o lo g y , Inc. FEATURES: DESCRIPTION: • 0 .5 M IC R O N C M O S Technology • E S D > 2 0 0 0 V per M IL -S T D -8 8 3 , Method 3015; > 2 0 0 V using m achine model C = 200p F, R = 0)

Contextual Info: 3.3V CMOS 18-BIT TO 36-BIT REGISTERED BUS EXCHANGER WITH 3-STATE OUTPUTS AND BUS-HOLD FEATURES: - The ALVCHG162282 provides synchronous data exchange between the two ports. Data is stored in the internal regis­ ters on the low-to-high transition of the clock CLK input.

cmos 4072

Contextual Info: IDT74LVCH1 6827 A ADVANCE INFORMATION 3.3V FAST CMOS 20-BIT BUFFERS WITH 5 VOLT T O L E R A N T I/O FEATURES: DESCRIPTION: • Com m on featu res: - Typical tSK o (O utput Skew) < 250ps - ESD > 2000V per M IL-STD -883, M ethod 3015; > 200V using m achine model (C = 200pF, R = 0)

SN75183

Abstract: DS7830 DS8830 SN55182 SN55183 SN75182
Contextual Info: SN55183, SN75183 DUAL DIFFERENTIAL LINE DRIVERS SLLS093C-OCTOBER 1972- REVISED MARCH 1997 Single 5-V Supply SN 5S183 . . . J OR W PACKAGE S N 75183 . . . N PACKAGE TOP V IE W Differential Line Operation Dual Channels TTL Compatibility Short-Circuit Protection of Outputs

Contextual Info: 3.3 V CMOS 18-BIT TO 36-BIT REGISTERED BUS EXCHANGER WITH 3-STATE OUTPUTS AND BUS-HOLD FEATURES: - DESCRIPTION: 0.5 MICRON CMOS Technology Typical tsK o (Output Skew) < 250ps ESD > 2000V per MIL-STD-883, Method 3015; > 200V using machine model (C = 200pF, R = 0)

2a419

Abstract: 1BL o.h Diode
Contextual Info: TO SHIBA ADVANCE INFORMATION TC74VCX16646FT TOSHIBA CMOS DIGITAL INTEGRATED CIRCUIT SILICON MONOLITHIC Tf74UfY1fifidRFT LOW VOLTAGE 16-BIT BUS TRANSCEIVER I REGISTER WITH 3.6V TOLERANT INPUTS AND OUTPUTS The TC74VCX16646FT is a high parformance CMOS 16-bit

74LVC4245

Abstract: 74LVC4245D 74LVC4245PW 74LVC4245DB
Contextual Info: Philips Semiconductors Product Specification Octal dual supply translating transceiver; 3-state FEATURES • • • • • QUICK REFERENCE DATA GND = 0 V; T amb = 25°C; tr = t, < 2.5 ns Wide supply voltage range 3 Volt port: 1.5 to 3.6 V 5 Volt port: 1.5 to 5.5 V