1BW 83 Search Results

dr25 diode specifications

Abstract: DR25 Diode OP 741 L6690 free download led wiring guide LLD1002E01
Contextual Info: INFRARED PULSED LASER DIODE L6690 Figure 2: Typical Radiant Power vs. Pulsed Forward Current INFRARED PULSED LASER DIODE Ta=25℃ (Ta=25℃) 100 RELATIVE RADIANT POWER (%) 2.5 ep 2.0 1.5 1.0 0.5 1.0 1.5 2.0 2.5 40 20 830 3.0 ●High duty ratio (DR≦2.5%)

HAMAMATSU PHOTONICS K.K

Abstract: CW laser diode L9277
Contextual Info: Lateral multimode broad stripe CW Laser Diode L9277 Series •FEATURES ●Radiant output power (CW): 1 W ●Peak emission wavelength: 830 nm ●Emitting area size: 50 µm x 1 µm ■APPLICATIONS ●Pumping source for solid state laser ●Processing ●Medical instrument

G8370-81

Abstract: G8370-82 G8370-83 G8370-85
Contextual Info: PHOTODIODE InGaAs PIN photodiode G8370-81/-82/-83/-85 Low PDL Polarization Dependence Loss InGaAs PIN photodiodes G8370-81/-82/-83/-85 have low PDL (Polarization Dependence Loss) at 1.55 µm, large shunt resistance and very low noise. Hamamatsu provides various types of InGaAs PIN photodiodes with active areas from φ1 to φ5 mm.

Contextual Info: PHOTODIODE InGaAs PIN photodiode G8370-81/-82/-83/-85 Low PDL Polarization Dependence Loss InGaAs PIN photodiodes G8370-81/-82/-83/-85 have low PDL (Polarization Dependence Loss) at 1.55 µm, large shunt resistance and very low noise. Hamamatsu provides various types of InGaAs PIN photodiodes with active areas from φ1 to φ5 mm.

Contextual Info: PHOTODIODE InGaAs PIN photodiode G8370-81/-82/-83/-85 Low PDL Polarization Dependence Loss InGaAs PIN photodiodes G8370-81/-82/-83/-85 have low PDL (Polarization Dependence Loss) at 1.55 µm, large shunt resistance and very low noise. Hamamatsu provides various types of InGaAs PIN photodiodes with active areas from φ1 to φ5 mm.

Contextual Info: PHOTODIODE InGaAs PIN photodiode G8370-81/-82/-83/-85 Low PDL Polarization Dependence Loss InGaAs PIN photodiodes G8370-81/-82/-83/-85 have low PDL (Polarization Dependence Loss) at 1.55 µm, large shunt resistance and very low noise. Hamamatsu provides various types of InGaAs PIN photodiodes with active areas from φ1 to φ5 mm.

Contextual Info: PHOTODIODE InGaAs PIN photodiode G8370-81/-82/-83/-85 Low PDL Polarization Dependence Loss InGaAs PIN photodiodes G8370-81/-82/-83/-85 have low PDL (Polarization Dependence Loss) at 1.55 µm, large shunt resistance and very low noise. Hamamatsu provides various types of InGaAs PIN photodiodes with active areas from φ1 to φ5 mm.

Contextual Info: PHOTODIODE InGaAs PIN photodiode G8370-81/-82/-83/-85 Large active areas from φ1 to φ5 mm InGaAs PIN photodiodes G8370-81/-82/-83/-85 have low PDL Polarization Dependence Loss at 1.55 µm, large shunt resistance and very low noise. Hamamatsu provides various types of InGaAs PIN photodiodes with active areas from φ1 to φ5 mm.

600 um laser fiber medical

Abstract: L929 Peltier element L9399 836 DIODE LLD1012E01 836 DIODE current "Peltier element" AL7 1BW CW Laser
Contextual Info: FIBER-OUTPUT CW LASER DIODES L9399 Figure 1: Radiant Output Power vs. Forward Current Typ. 0.6 0.5 0.4 0.3 0.2 0.1 0.2 0.4 0.6 0.8 1.0 1.2 ( Top(c) = 20 °C ) 100 Relative Radiant Output Power (%) Radiant Output Power Φe (W) Figure 2: Emission Spectrum (Typ.)

Contextual Info: PHOTODIODE Si photodiode S8559 Detector for X-ray monitor Features Applications l Si photodiode coupled to low cost CsI scintillator l Ideal for detection of X-ray energy below 100 keV l X-ray detection l X-ray monitors • Absolute maximum ratings Ta=25 °C

scintillator

Abstract: S8559 x-ray tube SE-171
Contextual Info: PHOTODIODE Si photodiode S8559 Detector for X-ray monitor Features Applications l Si photodiode coupled to low cost CsI scintillator l Ideal for detection of X-ray energy below 100 keV l X-ray detection l X-ray monitors • Absolute maximum ratings Ta=25 °C

CW Laser

Abstract: hamamatsu hpk
Contextual Info: FIBER-OUTPUT CW LASER DIODES L9399-02 PRELIMINARY DATA Fiber-output Laser Diode, Easy Handling, And Various Applications FEATURES High radiant optical power Fiber out : 1 W High stability Long life High cost performance APPLICATIONS Printing Material Processing

Contextual Info: LASER DIODE Laser diode L9279-14 TOSA type, 850 nm VCSEL, High-speed response: 2.5 Gbps Features Applications l 850 nm VCSEL l φ1.25 mm sleeve type TOSA Transmitter Optical Sub-Assembly l High-speed response: 2.5 Gbps l Optical fiber communications l Gigabit Ethernet

LASER RANGE FINDER

Abstract: for LASER RANGE FINDER L7055 free download led wiring guide OP 741 L7055-04 LLD1004E02
Contextual Info: HIGH-POWER INFRARED PULSED LASER DIODE L7055-04 Figure 2: Typical Radiant Power vs. Pulsed Forward Current Figure 3: Typical Emission Spectrum Ta=25℃ 100 RELATIVE RADIANT POWER (%) (Ｗ) 30 20 10 10 20 30 •FEATURES ●High output power (φep≦20W) ●High speed rise time (tr=0.5 ns typ.)

Contextual Info: PHOTODIODE Si photodiode S8193 Detector for X-ray monitors Features Applications l High sensitivity, high reliability photodiode with ceramic scintillator l High X-ray sensitivity: 1.8 times that of CWO l Less afterglow than CsI: <0.1 %/3 ms, <0.01 %/30 ms

CW Laser

Contextual Info: FIBER-OUTPUT CW LASER DIODES L9399-02 PRELIMINARY DATA Fiber-output Laser Diode, Easy Handling, And Various Applications FEATURES High radiant optical power Fiber out : 1 W High stability Long life High cost performance APPLICATIONS Printing Material Processing

marking code 1BL Diode

Abstract: 1bw 83 marking code 1AW J-STD-002B SMB10 JESD22-B102D marking code 1ay
Contextual Info: SMB10 8 J5.0(C) thru SMB10(8)J40(C)A Vishay General Semiconductor High Power Density Surface Mount TRANSZORB Transient Voltage Suppressors FEATURES • Low profile package • Ideal for automated placement • Glass passivated chip junction • Available in Unidirectional and Bidirectional

LLD1003E01

Abstract: OP 741 L7060-02 for LASER RANGE FINDER
Contextual Info: HIGH-POWER INFRARED PULSED LASER DIODE L7060-02 Figure 2: Typical Radiant Power vs. Pulsed Forward Current Figure 3: Typical Emission Spectrum Ta=25℃ 100 RELATIVE RADIANT POWER (%) (Ｗ) 30 20 10 10 20 30 •FEATURES ●High output power (φep≧30W) ●High speed rise time (tr=0.5 ns typ.)

CW Laser

Contextual Info: FIBER-OUTPUT CW LASER DIODES L9399-02 PRELIMINARY DATA Fiber-output Laser Diode, Easy Handling, And Various Applications FEATURES High radiant optical power Fiber out : 1 W High stability Long life High cost performance APPLICATIONS Printing Material Processing

Contextual Info: LASER DIODE Laser diode L9279-14 TOSA type, 850 nm VCSEL, High-speed response: 2.5 Gbps Features Applications l 850 nm VCSEL l φ1.25 mm sleeve type TOSA Transmitter Optical Sub-Assembly l High-speed response: 2.5 Gbps l Optical fiber communications l Gigabit Ethernet

S8193

Abstract: scintillator SE-171
Contextual Info: PHOTODIODE Si photodiode S8193 Detector for X-ray monitors Features Applications l High sensitivity, high reliability photodiode with ceramic scintillator l High X-ray sensitivity: 1.8 times that of CWO l Less afterglow than CsI: <0.1 %/3 ms, <0.01 %/30 ms

marking 1af

Abstract: marking code 1bx marking code 1bw marking code 1BL Diode marking CODE 1BS 1BW MARKING 1ag marking code marking code 1AW marking code 1av MARKING 1BW
Contextual Info: SMB10J5.0 thru 40A and SMB8J5.0C thru 40CA Vishay Semiconductors New Product formerly General Semiconductor High Power Density Surface Mount TRANSZORB Transient Voltage Suppressors Stand-off Voltage 5.0 to 40V Peak Pulse Power 1000W unidirectional 800W (bidirectional)

L9279-14

Abstract: SE-171
Contextual Info: LASER DIODE Laser diode L9279-14 TOSA type, 850 nm VCSEL, High-speed response: 2.5 Gbps Features Applications l 850 nm VCSEL l φ1.25 mm sleeve type TOSA Transmitter Optical Sub-Assembly l High-speed response: 2.5 Gbps l Optical fiber communications l Gigabit Ethernet

Super luminescent diode (SLD)

Contextual Info: Super Luminescent Diode SLD L12856-04 Parameter Forward current Symbol Value Unit If 185 mA Radiant flux Φe 15 mW SLD reverse voltage Vrs 1.5 V PD* reverse voltage Vrd 20 V Operating temperature Top(c) -10 to +70 ℃ Tstg -20 to +80 ℃ 1) Storage temperature