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    Torex Semiconductor LTD XC6701D602PR-G

    IC REG LINEAR 6V 150MA SOT89
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    DigiKey XC6701D602PR-G Digi-Reel 640 1
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    XC6701D602PR-G Cut Tape 640 1
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    Torex Semiconductor LTD XC6901D601MR-G

    IC REG LINEAR -6V 200MA SOT25
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    DigiKey XC6901D601MR-G Digi-Reel 97 1
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    Microchip Technology Inc APT2X101D60J

    DIODE MODULE GP 600V 100A ISOTOP
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    DigiKey APT2X101D60J Tube 94 1
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    Samtec Inc TCSD-11-D-60.00-01

    2MM DOUBLE ROW FEMALE IDC ASSEMB
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    DigiKey TCSD-11-D-60.00-01 Bulk 92 1
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    Master Electronics TCSD-11-D-60.00-01
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    Microchip Technology Inc APT2X61D60J

    DIODE MODULE GP 600V 60A ISOTOP
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    DigiKey APT2X61D60J Tube 64 1
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    TME APT2X61D60J 1
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    Richardson RFPD APT2X61D60J 1
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    1D60 Datasheets Context Search

    Catalog Datasheet MFG & Type PDF Document Tags

    Untitled

    Abstract: No abstract text available
    Text: UL-Series - UL489 Miniature Molded Case Circuit Breaker - 1 pole D-Trip - DC Standard Pack: 12 Weight: 0.3-32A: 1.74kg 3.83lb. 40-63A: 1.98kg (4.37lb.) Calibration Temperature 40ºC (104ºF) Ambient Temperature -25ºC to +55ºC (-13ºF to 131ºF ) Storage Temperature


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    PDF UL489 0-63A: 4x10-3 35xIN 4x10-2 100ms 0-63A

    D-Trip

    Abstract: No abstract text available
    Text: V-EA-Series - UL508 Manual Motor Controller - 1 pole D-Trip One Pole 35 mm 1.38 in. 93.3 mm (3.67 in.) 74.7 mm (2.94 in.) 17.5 mm (0.69 in.) Voltage Rating Short Circuit Withstand Rating (UL/CSA - Ratings) Group Short Circuit Withstand Rating (UL/CSA - Ratings)


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    PDF UL508 45xIN 4x10-2 4x10-3 E137938 1D03UM 1D05UM 1D075UM 1D10UM 1D13UM D-Trip

    SA452

    Abstract: SA336 SA424 120R S29GL512N SA487 EE8000 a78000a7ffff c58000c5ffff SA4871
    Text: Am29LV2562M Data Sheet RETIRED PRODUCT This product has been retired and is not available for designs. For new and current designs, S29GL512N supersedes Am29LV2562M and is the factory-recommended migration path. Please refer to the S29GL512N Data Sheet for specifications and ordering information. Availability of this


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    PDF Am29LV2562M S29GL512N S29GL512N SA452 SA336 SA424 120R SA487 EE8000 a78000a7ffff c58000c5ffff SA4871

    JS28F512M29

    Abstract: js28f256m29 js28f256 JS28F512 pc28f00am29ew JS28F00AM29EW pc28f00am29 js28f00 PC28F00AM29EWHA JS28F256M29EWL
    Text: Numonyx Axcell™ M29EW Datasheet 256-Mbit, 512-Mbit, 1-Gbit, 2-Gbit x8/x16, uniform block 3 V supply flash memory Features „ „ „ „ „ „ „ Supply voltage — VCC = 2.7 to 3.6 V for Program, Erase and Read — VCCQ = 1.65 to 3.6 V for I/O buffers


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    PDF M29EW 256-Mbit, 512-Mbit, x8/x16, 100ns 512-word 14MB/s) Kbytes/64 PC28F00AM29EWHA 11-Apr-2011 JS28F512M29 js28f256m29 js28f256 JS28F512 pc28f00am29ew JS28F00AM29EW pc28f00am29 js28f00 PC28F00AM29EWHA JS28F256M29EWL

    S7-200 cpu 224

    Abstract: s7 200 cpu 224 siemens S7-200 cpu 224xp Example SIMATIC S7 Programming PID function block PLC siemens S7-200 cpu 226 6ES7 298-8GA00-8XH0 TD400C 231 7PB22 0XA0 214-1BD23-0XB0 S7-200 cpu 224xp
    Text: Preface, Contents SIMATIC S7-200 Programmable Controller System Manual Product Overview 1 Getting Started 2 Installing the S7-200 3 PLC Concepts 4 Programming Concepts, Conventions and Features 5 S7-200 Instruction Set 6 Communicating over a Network 7 Hardware Troubleshooting Guide


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    PDF S7-200 S7-200 6ES7298-8FA24- S7-200 cpu 224 s7 200 cpu 224 siemens S7-200 cpu 224xp Example SIMATIC S7 Programming PID function block PLC siemens S7-200 cpu 226 6ES7 298-8GA00-8XH0 TD400C 231 7PB22 0XA0 214-1BD23-0XB0 S7-200 cpu 224xp

    Spansion S29GL512N11

    Abstract: No abstract text available
    Text: S29GLxxxN MirrorBitTM Flash Family S29GL512N, S29GL256N, S29GL128N 512 Megabit, 256 Megabit, and 128 Megabit, 3.0 Volt-only Page Mode Flash Memory featuring 110 nm MirrorBit process technology ADVANCE INFORMATION Datasheet Distinctive Characteristics Architectural Advantages


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    PDF S29GLxxxN S29GL512N, S29GL256N, S29GL128N 128-word/256-byte 8-word/16-byte S29GLxxxN 27631sb2 Spansion S29GL512N11

    asme SA388

    Abstract: gl128m A2113 S29GL256 E78000 S29GL128N TSOP56 S29GL128N sa32sa35 S29GLxxxM BGA-63
    Text: S29GL-M MirrorBitTM フラッシュファミリ S29GL256MS29GL128MS29GL064MS29GL032M 256M ビット,128M ビット,64M ビット,および 32M ビット, 3.0V 単一電源,ページモードフラッシュメモリ 0.23µm MirrorBit プロセステクノロジ


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    PDF S29GL-M S29GL256MS29GL128MS29GL064MS29GL032M S29GL128MS29GL128N S29GL256MS29GL256N S29GLxxxN 00-B-5 S29GL032M LAA064 asme SA388 gl128m A2113 S29GL256 E78000 S29GL128N TSOP56 S29GL128N sa32sa35 S29GLxxxM BGA-63

    FAA064

    Abstract: SPANSION S29GL128 S29GL128 S29GL-N S29GL-P GL128N GL256N S29GL128N S29GL256N
    Text: S29GL-N MirrorBit Flash Family with Alternative BGA Layout S29GL256N, S29GL128N 256 Megabit and 128 Megabit 3.0 Volt-only Page Mode Flash Memory featuring 110 nm MirrorBit™ Process Technology S29GL-N Cover Sheet Data Sheet Notice to Readers: This document states the current technical specifications regarding the Spansion


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    PDF S29GL-N S29GL256N, S29GL128N S29GL-N FAA064 SPANSION S29GL128 S29GL128 S29GL-P GL128N GL256N S29GL128N S29GL256N

    120R

    Abstract: C8800
    Text: Am29LV2562M Data Sheet July 2003 The following document specifies Spansion memory products that are now offered by both Advanced Micro Devices and Fujitsu. Although the document is marked with the name of the company that originally developed the specification, these products will be offered to customers of both AMD and


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    PDF Am29LV2562M 120R C8800

    5N521

    Abstract: No abstract text available
    Text: 1 PLL620-20 1 Low Phase Noise XO for HF Fund. and 3 rd O.T. DIE CONFIGURATION FEATURES XIN DESCRIPTION VDD VDD VDD N/C Reserved Reserved 25 24 23 22 21 20 19 18 26 Die ID: A1212-12 XOUT 27 N/C 28 N/C 29 OE CTRL 30 N/C 31 C502A 3 4 5 6 7 8 GND GND GND Reserved


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    PDF PLL620-20 A1212-12 C502A A7F1B91 9E76B9A71/6* 7F1B91 B9D76 7761D EF946943F92 73456F 5N521

    l256mh113

    Abstract: L256ML123R
    Text: Am29LV256M Data Sheet September 2003 The following document specifies Spansion memory products that are now offered by both Advanced Micro Devices and Fujitsu. Although the document is marked with the name of the company that originally developed the specification, these products will be offered to customers of both AMD and


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    PDF Am29LV256M l256mh113 L256ML123R

    Untitled

    Abstract: No abstract text available
    Text: S29GL-N MirrorBit Flash Family S29GL512N, S29GL256N, S29GL128N 512 Megabit, 256 Megabit, and 128 Megabit, 3.0 Volt-only Page Mode Flash Memory featuring 110 nm MirrorBit Process Technology S29GL-N Cover Sheet Data Sheet This product family has been retired and is not recommended for designs. For new and current designs,


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    PDF S29GL-N S29GL512N, S29GL256N, S29GL128N S29GL-N S29GL128P, S29GL256P, S29GL512P S29GL128N,

    top side a4 marking

    Abstract: 23C00 100FE 1D803 24C01 MARKING 1C202 1C801 11801 23C01 1D002
    Text: To our customers, Old Company Name in Catalogs and Other Documents On April 1st, 2010, NEC Electronics Corporation merged with Renesas Technology Corporation, and Renesas Electronics Corporation took over all the business of both companies. Therefore, although the old company name remains in this document, it is a valid


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    PDF M306V5ME-XXXSP, M306V5EESP top side a4 marking 23C00 100FE 1D803 24C01 MARKING 1C202 1C801 11801 23C01 1D002

    L256MH113R

    Abstract: L256ML113R
    Text: Am29LV256M Data Sheet -XO\  7KH IROORZLQJ GRFXPHQW VSHFLILHV 6SDQVLRQ PHPRU\ SURGXFWV WKDW DUH QRZ RIIHUHG E\ ERWK $GYDQFHG 0LFUR 'HYLFHV DQG XMLWVX $OWKRXJK WKH GRFXPHQW LV PDUNHG ZLWK WKH QDPH RI WKH FRPSDQ\ WKDW RULJ LQDOO\ GHYHORSHG WKH VSHFLILFDWLRQ WKHVH SURGXFWV ZLOO EH RIIHUHG WR FXVWRPHUV RI ERWK $0' DQG


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    PDF Am29LV256M L256MH113R L256ML113R

    a22t

    Abstract: S19G S29GL-N
    Text: S29GL-N MirrorBit Flash Family S29GL512N, S29GL256N, S29GL128N 512 Megabit, 256 Megabit, and 128 Megabit, 3.0 Volt-only Page Mode Flash Memory featuring 110 nm MirrorBit™ Process Technology Data Sheet Notice to Readers: This document states the current technical specifications


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    PDF S29GL-N S29GL512N, S29GL256N, S29GL128N a22t S19G

    S29GL-N

    Abstract: 1E300
    Text: S29GL512/256/128N MirrorBit Flash Family S29GL512N, S29GL256N, S29GL128N 512 Megabit, 256 Megabit, and 128 Megabit, 3.0 Volt-only Page Mode Flash Memory featuring 110 nm MirrorBit™ Process Technology ADVANCE INFORMATION Data Sheet Notice to Readers: The Advance Information status indicates that this


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    PDF S29GL512/256/128N S29GL512N, S29GL256N, S29GL128N S29GL-N 1E300

    CORE i3 ARCHITECTURE

    Abstract: Cpu Core i7 1186D core i3 core i7 alu I3 CPU IA15 S1C63000 jrc 1001b x0s7
    Text: MF855-03a CMOS 4-BIT SINGLE CHIP MICROCOMPUTER S1C63000 Core CPU Manual NOTICE No part of this material may be reproduced or duplicated in any form or by any means without the written permission of Seiko Epson. Seiko Epson reserves the right to make changes to this material without notice. Seiko Epson does not assume any


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    PDF MF855-03a S1C63000 E-08190 CORE i3 ARCHITECTURE Cpu Core i7 1186D core i3 core i7 alu I3 CPU IA15 S1C63000 jrc 1001b x0s7

    7be0

    Abstract: No abstract text available
    Text: Numonyx Axcell™ M29EW Datasheet 256-Mbit, 512-Mbit, 1-Gbit, 2-Gbit x8/x16, uniform block 3 V supply flash memory Features „ „ „ „ „ „ „ Supply voltage — VCC = 2.7 to 3.6 V for Program, Erase and Read — VCCQ = 1.65 to 3.6 V for I/O buffers


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    PDF M29EW 256-Mbit, 512-Mbit, x8/x16, 100ns 512-word 48MB/s) Kbytes/64 7be0

    1E62H

    Abstract: 1E4F 8XC196CB AN87C196CB 1E54H 1E7d 82527 as87c196cb board ccb2 nt 87C196CB
    Text: 87C196CB Supplement to 8XC196NT User’s Manual CB_title.fm5 Page 1 Tuesday, September 15, 1998 9:54 AM 87C196CB Supplement to 8XC196NT User’s Manual September 1998 Order Number: 272787-002 CB_legal.fm5 Page 1 Tuesday, September 15, 1998 9:39 AM Information in this document is provided in connection with Intel products. No license, express or implied, by estoppel or


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    PDF 87C196CB 8XC196NT MSK15, 1E62H 1E4F 8XC196CB AN87C196CB 1E54H 1E7d 82527 as87c196cb board ccb2 nt

    s29gl032m10tair

    Abstract: No abstract text available
    Text: S29GLxxxM MirrorBitTM Flash Family S29GL256M, S29GL128M, S29GL064M, S29GL032M 256 Megabit, 128 Megabit, 64 Megabit, and 32Megabit, 3.0 Volt-only Page Mode Flash Memory featuring 0.23 um MirrorBit process technology Datasheet PRELIMINARY Distinctive Characteristics


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    PDF S29GLxxxM S29GL256M, S29GL128M, S29GL064M, S29GL032M 32Megabit, 128-word/256-byte 8-word/16-byte BGA-80P-M02 s29gl032m10tair

    S70GL01GN00

    Abstract: S29GL01GP S29GL512N
    Text: S70GL01GN00 MirrorBit Flash 1024 Megabit, 3.0 Volt-only Page Mode Flash Memory Featuring 110 nm MirrorBit™ Process Technology Data Sheet Notice to Readers: The S70GL01GN has been retired and is not recommended for designs. For new and current designs, S29GL01GP


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    PDF S70GL01GN00 S70GL01GN S29GL01GP S29GL01GP S29GL512N

    intel 82527

    Abstract: 1E50H 74HC14 oscillator application note 1E62H 1E06H 82527 INTEL 87C196CB MANUAL mcs 96 programming CAN operation Bosch 74ls373 datasheet
    Text: 87C196CB Supplement to 8XC196NT User’s Manual 87C196CB Supplement to 8XC196NT User’s Manual October 1995 Information in this document is provided solely to enable use of Intel products. Intel assumes no liability whatsoever, including infringement of any patent or copyright, for sale and use of Intel products except as provided in Intel’s Terms and Conditions


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    PDF 87C196CB 8XC196NT MSK15, intel 82527 1E50H 74HC14 oscillator application note 1E62H 1E06H 82527 INTEL 87C196CB MANUAL mcs 96 programming CAN operation Bosch 74ls373 datasheet

    SA293

    Abstract: SA273 988000
    Text: DATASHEET Am29LV256M 256 Megabit 16 M x 16-Bit/32 M x 8-Bit MirrorBitTM 3.0 Volt-only Uniform Sector Flash Memory with VersatileI/OTM Control DISTINCTIVE CHARACTERISTICS ARCHITECTURAL ADVANTAGES • Single power supply operation — 3 volt read, erase, and program operations


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    PDF Am29LV256M 16-Bit/32 16-word/32-byte 56-pi SA293 SA273 988000

    L256ML

    Abstract: SA4871 BD8000 sa340 transistor SA427 SA370 8A000 740-0007 Am29LV256 SA36-110
    Text: ADVANCE INFORMATION Am29LV256M 256 Megabit 16 M x 16-Bit/32 M x 8-Bit MirrorBitTM 3.0 Volt-only Uniform Sector Flash Memory with VersatileI/OTM Control DISTINCTIVE CHARACTERISTICS ARCHITECTURAL ADVANTAGES • Single power supply operation — 3 volt read, erase, and program operations


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    PDF Am29LV256M 16-Bit/32 128-word/256-byte 8-word/16-byte L256ML SA4871 BD8000 sa340 transistor SA427 SA370 8A000 740-0007 Am29LV256 SA36-110