1GHZ BJT RF Search Results

Contextual Info: RF3023 RF3023 BROADBAND MEDIUM POWER SPDT SWITCH Package: SC70, 6-Pin Product Description Features The RF3023 is a GaAs pHEMT single-pole double-throw SPDT switch designed for general purpose switching applications which require very low insertion loss, moderate isolation, and medium power handling capability. The RF3023 is ideally suited for battery-powered and low control

Contextual Info: RF3023 RF3023 BROADBAND MEDIUM POWER SPDT SWITCH Package: SC70, 6-Pin Product Description Features The RF3023 is a GaAs pHEMT single-pole double-throw SPDT switch designed for general purpose switching applications which require very low insertion loss, moderate isolation, and medium power handling capability. The RF3023 is ideally suited for battery-powered and low control

Contextual Info: RF3024 RF3024 BROADBAND MEDIUM POWER SPDT SWITCH Package: SC70, 6-Pin Product Description Features The RF3024 is a GaAs pHEMT single-pole double-throw SPDT switch designed for general purpose switching applications which require very low insertion loss, moderate isolation, and medium power handling capability. The RF3024 is ideally suited for battery-powered and low control

Contextual Info: RF3023 RF3023 BROADBAND MEDIUM POWER SPDT SWITCH Package: SC70, 6-Pin Product Description Features The RF3023 is a GaAs pHEMT single-pole double-throw SPDT switch designed for general purpose switching applications which require very low insertion loss, moderate isolation, and medium power handling capability. The RF3023 is ideally suited for battery-powered and low control

1ghz bjt

Abstract: rf3024
Contextual Info: RF3024 RF3024 BROADBAND MEDIUM POWER SPDT SWITCH Package: SC70, 6-Pin Product Description Features The RF3024 is a GaAs pHEMT single-pole double-throw SPDT switch designed for general purpose switching applications which require very low insertion loss, moderate isolation, and medium power handling capability. The RF3024 is ideally suited for battery-powered and low control

Contextual Info: RF3024 RF3024 BROADBAND MEDIUM POWER SPDT SWITCH Package: SC70, 6-Pin Product Description Features The RF3024 is a GaAs pHEMT single-pole double-throw SPDT switch designed for general purpose switching applications which require very low insertion loss, moderate isolation, and medium power handling capability. The RF3024 is ideally suited for battery-powered and low control

Contextual Info: RF3024 RF3024 BROADBAND MEDIUM POWER SPDT SWITCH Package: SC70, 6-Pin Product Description Features The RF3024 is a GaAs pHEMT single-pole double-throw SPDT switch designed for general purpose switching applications which require very low insertion loss, moderate isolation, and medium power handling capability. The RF3024 is ideally suited for battery-powered and low control

rfmd sc70-6

Abstract: 1ghz bjt RF3023
Contextual Info: RF3023 RF3023 BROADBAND MEDIUM POWER SPDT SWITCH Package: SC70, 6-Pin Product Description Features The RF3023 is a GaAs pHEMT single-pole double-throw SPDT switch designed for general purpose switching applications which require very low insertion loss, moderate isolation, and medium power handling capability. The RF3023 is ideally suited for battery-powered and low control

1ghz bjt

Contextual Info: RF3023 RF3023 BROADBAND MEDIUM POWER SPDT SWITCH Package: SC70, 6-Pin Product Description Features The RF3023 is a GaAs pHEMT single-pole double-throw SPDT switch designed for general purpose switching applications which require very low insertion loss, moderate isolation, and medium power handling capability. The RF3023 is ideally suited for battery-powered and low control

Contextual Info: RF3024 RF3024 BROADBAND MEDIUM POWER SPDT SWITCH Package: SC70, 6-Pin Product Description Features The RF3024 is a GaAs pHEMT single-pole double-throw SPDT switch designed for general purpose switching applications which require very low insertion loss, moderate isolation, and medium power handling capability. The RF3024 is ideally suited for battery-powered and low control

Contextual Info: RF3024 RF3024 BROADBAND MEDIUM POWER SPDT SWITCH Package: SC70, 6-Pin Product Description Features The RF3024 is a GaAs pHEMT single-pole double-throw SPDT switch designed for general purpose switching applications which require very low insertion loss, moderate isolation, and medium power handling capability. The RF3024 is ideally suited for battery-powered and low control

RF2316

Abstract: TA0015 DIN4500B RF2312 RF2317 HBT transistor s parameters measures
Contextual Info: TA0015  TA0015 RF2312/RF2317: High Linearity HBT Amplifiers for CATV Systems +LJK /LQHDULW\ +%7 $PSOLILHUV IRU &$79 6\VWHPV ,QWURGXFWLRQ The need for high linearity amplifiers arises from stress placed on communications channels by the addition of more data and the requirement to handle digitally modulated signals with high fidelity. As the amount of data

Contextual Info: RFPP9850 1GHZ, 28DB GAIN GAAS/GAN PUSH PULL HYBRID Package: SOT-115J Features • Excellent Linearity  Superior Return Loss Performance  Extremely Low Distortion  Optimal Reliability  Suitable for PAL D and Flat NTSC Loading  Unconditionally Stable Under all

RF2316

Abstract: DIN4500B TA0015 HBT transistor s parameters measures
Contextual Info: TA0015
 TA0015 RF2312/RF2317: High Linearity HBT Amplifiers for CATV Systems       Monolithic Amplifiers using GaAs HBT technology have been developed. HBT based amplifiers offer extremely flat frequency response with high dynamic

Contextual Info: RFÜ RF2326 [: Preliminary MICRO DEVICES 3 V GENERAL PURPOSE AM PLIFIER Typical Applications • Broadband Gain Blocks • Driver Stage for Power Amplifiers • Final PA for Low-Power Applications • Oscillator Loop Amplifiers • IF or RF Buffer Amplifiers

Contextual Info: RF1201 RF1201broadband 10W spdt switch BROADBAND 10W SPDT SWITCH Package: QFN, 6-Pin, 2mm x 2mm x 0.85mm Features         Low Frequency - 2.5GHz Operation Low Insertion Loss: 0.3dB at 1GHz High Isolation: 26dB at 1GHz Low Control Voltage:

RFMD RF1201

Abstract: HDR 1X2 RFmd SPDT
Contextual Info: RF1201 RF1201broadband 10W spdt switch BROADBAND 10W SPDT SWITCH Package: QFN, 6-Pin, 2mm x 2mm x 0.85mm Features         Low Frequency - 2.5GHz Operation Low Insertion Loss: 0.3dB at 1GHz High Isolation: 26dB at 1GHz Low Control Voltage:

RF1200SPDT

Abstract: HDR-1X2 HDR1X2 RF1200 RF1200PCBA-410
Contextual Info: RF1200 SPDT SWITCH RoHS Compliant & Pb-Free Product Package Style: QFN, 6-pin, 2x2 Features „ „ „ „ „ Low Insertion Loss 0.3dB at 1GHz High Isolation 26dB at 1GHz Low Control Voltage 2.6V to 5.0V Harmonics H2: -80dBc@1GHz GaAs pHEMT Process RF1 1 6 VRF1

Modeling of SOI FET for RF Switch Applications

Contextual Info: RTU2D-2 Modeling of SOI FET for RF Switch Applications Tzung-Yin Lee and Sunyoung Lee Skyworks Solutions, Inc. 5221 California Avenue, Irvine, CA 92617 Abstract — This paper presents the modeling of an SOI FET for RF switch applications. Given that the HF smallsignal predictability, i.e. the insertion loss and the isolation, is

Contextual Info: RF1200 RF1200broadband high power spdt switch BROADBAND HIGH POWER SPDT SWITCH Package: QFN, 6-Pin, 2mmx2mmx0.85mm Features       Low Frequency - 2.5GHz Operation Low Insertion Loss: 0.3dB at 1GHz High Isolation: 26dB at 1GHz Low Control Voltage:

Y parameters of rf bjt

Abstract: RF1200 RF1200PCBA-410 high power SPDT 1ghz bjt RF HDR1X2
Contextual Info: RF1200 RF1200broadband high power spdt switch BROADBAND HIGH POWER SPDT SWITCH Package: QFN, 6-Pin, 2mmx2mmx0.85mm Features       Low Frequency - 2.5GHz Operation Low Insertion Loss: 0.3dB at 1GHz High Isolation: 26dB at 1GHz Low Control Voltage:

RF1201

Abstract: RFMD RF1201 jammer gsm
Contextual Info: RF1201 BROADBAND 10W SPDT SWITCH RFMD Green, RoHS Compliant, Pb-Free Product Package Style: QFN, 6-Pin, 2.00mmx2.00mmx0.85mm Features „ „ „ „ „ „ „ „ Low Frequency - 2.5GHz Operation Low Insertion Loss: 0.3dB at 1GHz High Isolation: 26dB at 1GHz Low Control Voltage:

Contextual Info: RF1200 SPDT SWITCH RoHS Compliant & Pb-Free Product Package Style: QFN, 6-pin, 2x2 Features „ „ „ „ „ Low Insertion Loss 0.3dB at 1GHz High Isolation 26dB at 1GHz Low Control Voltage 2.6V to 5.0V Harmonics H2: -80dBc@1GHz GaAs pHEMT Process RF1 1 6 VRF1

RFMD RF1201

Abstract: Bluetooth Jammer RF1201 jammer gsm gsm jammer Y parameters of rf bjt RFmd SPDT
Contextual Info: RF1201 RF1201broadband 10W spdt switch BROADBAND 10W SPDT SWITCH Package: QFN, 6-Pin, 2mmx2mmx0.85mm        Low Frequency - 2.5GHz Operation Low Insertion Loss: 0.3dB at 1GHz High Isolation: 26dB at 1GHz Low Control Voltage: 2.6V to 5.0V