1GM J Search Results

Contextual Info: JIANGSU CHANGJIANG ELECTRONICS TECHNOLOGY CO., LTD SOT-23 Plastic-Encapsulate Transistors MMBTA06 TRANSISTOR NPN SOT–23 FEATURES  For Switching and Amplifier Applications  Complementary Type PNP Transistor MMBTA56 MARKING: 1GM 1. BASE MAXIMUM RATINGS (Ta=25℃ unless otherwise noted)

1gm transistor

Abstract: 1GM sot-23 transistor
Contextual Info: JIANGSU CHANGJIANG ELECTRONICS TECHNOLOGY CO., LTD SOT-23 Plastic-Encapsulate Transistors MMBTA06 TRANSISTOR NPN SOT–23 FEATURES  For Switching and Amplifier Applications  Complementary Type PNP Transistor MMBTA56 MARKING: 1GM 1. BASE MAXIMUM RATINGS (Ta=25℃ unless otherwise noted)

Contextual Info: MMBTA05 MMBTA06 Driver NPN 3 * “G” Lead Pb -Free 1 2 SOT-23 VCEO MMBTA05 60 60 4.0 MMBTA06 80 80 4.0 MMBTA05=1H, MMBTA06=1GM (3) MMBTA05 MMBTA06 60 80 MMBTA05 MMBTA06 60 80 4.0 I B =0) 6 8 S MMBTA05 MMBTA06 3.Pulse Test:Pulse Width <_ 300us, Duty Cycle <_ 2.0%

1GM sot-23

Abstract: MMBTA05 MMBTA06
Contextual Info: MMBTA05 MMBTA06 Driver NPN 3 1 2 SOT-23 VCEO MMBTA05 60 60 4.0 MMBTA06 80 80 4.0 MMBTA05=1H, MMBTA06=1GM 3 MMBTA05 MMBTA06 60 80 MMBTA05 MMBTA06 60 80 4.0 I B =0) 6 8 S MMBTA05 MMBTA06 0.1 u 0.1 0.1 u 3.Pulse Test:Pulse Width <_ 300us, Duty Cycle <_ 2.0%

1GM sot-23

Abstract: MMBTA05 MMBTA06
Contextual Info: MMBTA05 MMBTA06 Driver NPN 3 1 2 SOT-23 VCEO MMBTA05 60 60 4.0 MMBTA06 80 80 4.0 MMBTA05=1H, MMBTA06=1GM 3 MMBTA05 MMBTA06 60 80 MMBTA05 MMBTA06 60 80 4.0 I B =0) 6 8 S MMBTA05 MMBTA06 3.Pulse Test:Pulse Width <_ 300us, Duty Cycle <_ 2.0% 4. f T is defined as the freguency at which hfeextrapolates to unity

Contextual Info: LESHAN RADIO COMPANY, LTD. Driver Transistors LMBTA05LT1G LMBTA06LT1G S-LMBTA05LT1G S-LMBTA06LT1G FEATURES • We declare that the material of product compliance with RoHS requirements. • S- Prefix for Automotive and Other Applications Requiring Unique Site and Control Change Requirements; AEC-Q101

LMBTA05WT1G

Contextual Info: LESHAN RADIO COMPANY, LTD. Driver Transistors FEATURES LMBTA05WT1G LMBTA06WT1G S-LMBTA05WT1G S-LMBTA06WT1G • We declare that the material of product compliance with RoHS requirements. • S- Prefix for Automotive and Other Applications Requiring Unique Site and Control Change Requirements; AEC-Q101

Marking 1GM

Abstract: marking 1h LMBTA06WT1G 1GM x
Contextual Info: LESHAN RADIO COMPANY, LTD. Driver Transistors LMBTA05WT1G LMBTA06WT1G FEATURES • We declare that the material of product 3 compliance with RoHS requirements. MAXIMUM RATINGS Rating 1 Symbol Value LMBTA05 LMBTA06 2 Unit Collector–Emitter Voltage V CEO 60

1GM H

Abstract: Marking 1GM 1GM 5 LMBTA05LT1G LMBTA06LT1G 1gm sot 23 marking 1h 1gm marking
Contextual Info: LESHAN RADIO COMPANY, LTD. Driver Transistors LMBTA05LT1G LMBTA06LT1G FEATURES • We declare that the material of product 3 compliance with RoHS requirements. 1 MAXIMUM RATINGS Rating 2 Symbol Value LMBTA05 LMBTA06 Unit Collector–Emitter Voltage V CEO 60

Contextual Info: LESHAN RADIO COMPANY, LTD. Driver Transistors FEATURES LMBTA05LT1G LMBTA06LT1G S-LMBTA05LT1G S-LMBTA06LT1G • We declare that the material of product • compliance with RoHS requirements. S- Prefix for Automotive and Other Applications Requiring Unique Site and Control Change Requirements; AEC-Q101

Contextual Info: SOT-23 Plastic-Encapsulate Transistors MMBTA06LT1 SOT-23 TRANSISTOR NPN 1. BASE 2. EMITTER FEATURES 3. COLLECTOR W (Tamb=25℃) 2. 4 1. 3 0. 95 0. 4 2. 9 Collector current 0.5 A ICM: Collector-base voltage 80 V V(BR)CBO: Operating and storage junction temperature range

Contextual Info: LESHAN RADIO COMPANY, LTD. Driver Transistors LMBTA05LT1G LMBTA06LT1G FEATURES • Pb−Free Package May be Available. The G−Suffix Denotes a 3 Pb−Free Lead Finish 1 MAXIMUM RATINGS Rating 2 Symbol Value LMBTA05 LMBTA06 Unit Collector–Emitter Voltage

Contextual Info: CENTRAL SEMICONDUCTOR 1 • . . n a “n t . 3 oqdd3 5 t CS92 SERIES v e -tl._ SILICON CONTROLLED RECTIFIER 0.8 AMPS £ . . i i^?efiSä5G&/'Gr €;GLVj. € e B B £ ü ’CSS §eRLi.ce@BieaK;eß@[i5e @ sp . 100 THRU 800 VOLTS JEDEC T0-92 CASE Central

40C120B

Abstract: 40C40B 40C60B 40C80B
Contextual Info: Silicon Controlled Rectifier Series 40C Dim In ch es Minimum A B C E F G H J K M N P R S Note 1: 1/4-28 UNF-3A Forward k Reverse Repetitive Blocking 1 .677 -1.200 .427 .115 - .200 .120 - .065 .145 .055 .025 .685 .770 1.250 .447 .155 .515 .249 .300 .667

CS92A

Abstract: CS92B CS92D CS92M CS92N
Contextual Info: CENTRAL SEMICONDUCTOR CS92 SERIES 1 ' . . V « -, . SILICON CONTROLLED RECTIFIER 0.8 AMPS l£. • t L:ceßB55 iSGÖ/C C iG LV i. ©BBSC’CSS §eGLeCe@Biä^eseß©p e@s’0 . Central Sem iconductor Corp. 100 THRU 800 VOLTS JEDEC TO-92 CASE 1 4 5 A dam s Avenue

55C100B

Abstract: 55C100BF 55C120B 55C120BF 55C60B 55C60BF 55C80B 55C80BF
Contextual Info: Silicon Controlled Rectifier Series 55C Dim. Inches Minimum A B C D E F G H J K M N P R S T U V W X Y Z AA H 1 -*-1 3-1 TO-208AD T0-83 Ì TO-209AC (TO— 94) Note 1: 1 /2 -2 0 UNF-3A Note 2: Full thread within 2 1/2 threads Note 3: For insulated cathode lead,

07102G0A

Abstract: 07104G0A 07105GOA 07106GOA
Contextual Info: Silicon Controlled Rectifier Series 071 Dim Inches Millimeter Minimum Maximum Minimum Maximum Notes 1 A B C E F G H J K 1.050 - 5.850 6.850 .797 .276 - M N P R TO—208AD TO-83 Note 1: 1/2 20 UNF-3A Note 2: Ful •ull thread within 2 1/2 threads Note 3: To specify package designation other than standard

x-ray film illuminator

Abstract: 2WAY dashpot damping 751168
Contextual Info: Issued March 1997 232-4184 Data Pack G Dashpot dampers Data Sheet RS stock numbers 751-146, 751-152, 751-168, 751-174, 751-180, 751-196, 751-203 Applications ● Prevent damage to sensitive equipment from shock and vibration ● Reduce impact noise ● Damping extreme movements

Marking 1GM

Abstract: 1gm transistor 1GM sot-23 transistor MMBTA06 MMBTA56 transistor 1gm 6
Contextual Info: JIANGSU CHANGJIANG ELECTRONICS TECHNOLOGY CO., LTD SOT-23 Plastic-Encapsulate Transistors MMBTA06 TRANSISTOR NPN SOT-23 FEATURES z z Complementary PNP types available MMBTA56 1. BASE Ldeal for medium power amplification and switching 2. EMITTER 3. COLLECTOR

2N3669

Abstract: scr 2n3668 2N3668 2N3670 2n4103 2n3668 datasheet
Contextual Info: Datasheet 2N3668 2N3669 2N3670 2 N 4 1 03 SILICON CONTR O L L ED REC TI FI E R 16 AMPS 220 THRU 800 VOLTS 145 Adam s Avenue, Hauppauge, NY 11788 USA Tel: 631 435-1110 • Fax: (631) 435-1824 Manufacturers of World Class Discrete Semiconductors JEDEC T0-3 CASE

SF3H42

Abstract: TOSHIBA THYRISTOR SF3H42LC2
Contextual Info: THYRISTOR SILICON DIFFUSED JUNCTION SF3H42 LC2 FOR AUT0-STR0B0 FLASHER APPLICATIONS. Unit in mm (Commutator Use) . Non-Repetitive Peak Off-State Voltage : V d s m = 600V . Critical Rate of Rise of On-State Current : di/dt=lOOOA/^s . Gate Trigger Current : 1g j =200(jA(Ma x .)

CQ92

Contextual Info: CENTRAL o.v,: ;• L: SEMICONDUCTOR o de ooocm? I v-f CQ92A CQ92B CQ92D CQ.92M feer- e^patpcto g MtuEG@5î&385@e&? (S r-E TRIAC 0.8 AMPS 100 T H R U 6 0 0 V O L T S Central Semiconductor Corp. 1 4 5 Adams Avenue Hauppauge, N ew York 1 1 7 8 8 JEDEC TO-92 CASE

MMBTA05LT1G

Abstract: 1GM sot-23 MMBTA05 MMBTA05LT1 MMBTA05LT3 MMBTA05LT3G MMBTA06 MMBTA06LT1 MMBTA06LT1G MMBTA06LT3
Contextual Info: MMBTA05LT1, MMBTA06LT1 MMBTA06LT1 is a Preferred Device Driver Transistors NPN Silicon Features • Pb−Free Packages are Available COLLECTOR 3 MAXIMUM RATINGS Rating Symbol Collector −Emitter Voltage MMBTA05LT1 MMBTA06LT1 VCEO Collector −Base Voltage

2N1794-1804

Abstract: 6Cp 80 624A2 Microsemi Catalog 2N1795 2N1796 2N1797 2N1798 2N1799 2N4371
Contextual Info: Silicon Controlled Rectifiers y 804: 2N4371 - 4 3 7 7 Dim Inches Millimeter Minimum Maximum Minimum Maximum Notes i— Î i 'i A B C D E F G H J K M N P R S T U r m i K t I i E D TO-83 Note 1: 1/2-20 UNF-3A Note 2: Full thread within 2 1/2 threads Microsemi