Untitled
Abstract: No abstract text available
Text: JIANGSU CHANGJIANG ELECTRONICS TECHNOLOGY CO., LTD SOT-23 Plastic-Encapsulate Transistors MMBTA06 TRANSISTOR NPN SOT–23 FEATURES For Switching and Amplifier Applications Complementary Type PNP Transistor MMBTA56 MARKING: 1GM 1. BASE MAXIMUM RATINGS (Ta=25℃ unless otherwise noted)
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OT-23
MMBTA06
MMBTA56
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1gm transistor
Abstract: 1GM sot-23 transistor
Text: JIANGSU CHANGJIANG ELECTRONICS TECHNOLOGY CO., LTD SOT-23 Plastic-Encapsulate Transistors MMBTA06 TRANSISTOR NPN SOT–23 FEATURES For Switching and Amplifier Applications Complementary Type PNP Transistor MMBTA56 MARKING: 1GM 1. BASE MAXIMUM RATINGS (Ta=25℃ unless otherwise noted)
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OT-23
MMBTA06
MMBTA56
100mA
100mA,
100MHz
1gm transistor
1GM sot-23 transistor
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Untitled
Abstract: No abstract text available
Text: LESHAN RADIO COMPANY, LTD. Driver Transistors LMBTA05LT1G LMBTA06LT1G FEATURES • Pb−Free Package May be Available. The G−Suffix Denotes a 3 Pb−Free Lead Finish 1 MAXIMUM RATINGS Rating 2 Symbol Value LMBTA05 LMBTA06 Unit Collector–Emitter Voltage
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LMBTA05LT1G
LMBTA06LT1G
LMBTA05
LMBTA06
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MMBTA05LT1G
Abstract: 1GM sot-23 MMBTA05 MMBTA05LT1 MMBTA05LT3 MMBTA05LT3G MMBTA06 MMBTA06LT1 MMBTA06LT1G MMBTA06LT3
Text: MMBTA05LT1, MMBTA06LT1 MMBTA06LT1 is a Preferred Device Driver Transistors NPN Silicon Features • Pb−Free Packages are Available COLLECTOR 3 MAXIMUM RATINGS Rating Symbol Collector −Emitter Voltage MMBTA05LT1 MMBTA06LT1 VCEO Collector −Base Voltage
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MMBTA05LT1,
MMBTA06LT1
MMBTA06LT1
MMBTA05LT1
MMBTA05LT1G
1GM sot-23
MMBTA05
MMBTA05LT1
MMBTA05LT3
MMBTA05LT3G
MMBTA06
MMBTA06LT1G
MMBTA06LT3
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Untitled
Abstract: No abstract text available
Text: LESHAN RADIO COMPANY, LTD. Driver Transistors LMBTA05LT1G LMBTA06LT1G S-LMBTA05LT1G S-LMBTA06LT1G FEATURES • We declare that the material of product compliance with RoHS requirements. • S- Prefix for Automotive and Other Applications Requiring Unique Site and Control Change Requirements; AEC-Q101
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LMBTA05LT1G
LMBTA06LT1G
S-LMBTA05LT1G
S-LMBTA06LT1G
AEC-Q101
LMBTA05
LMBTA06
S-LMBTA05LT1G
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MMBTA05
Abstract: MMBTA06LT1 MMBTA06LT3G MMBT MMBTA05LT1 MMBTA05LT1G MMBTA05LT3 MMBTA05LT3G MMBTA06 MMBTA06LT1G
Text: MMBTA05LT1, MMBTA06LT1 MMBTA06LT1 is a Preferred Device Driver Transistors NPN Silicon http://onsemi.com Features • Pb−Free Packages are Available COLLECTOR 3 MAXIMUM RATINGS Rating Symbol Collector −Emitter Voltage MMBTA05LT1 MMBTA06LT1 VCEO Collector −Base Voltage
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MMBTA05LT1,
MMBTA06LT1
MMBTA06LT1
MMBTA05LT1
MMBTA05LT1/D
MMBTA05
MMBTA06LT3G
MMBT
MMBTA05LT1
MMBTA05LT1G
MMBTA05LT3
MMBTA05LT3G
MMBTA06
MMBTA06LT1G
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100-6 SOT-23
Abstract: 1GM x
Text: MMBTA05LT1, MMBTA06LT1 MMBTA06LT1 is a Preferred Device Driver Transistors NPN Silicon http://onsemi.com MAXIMUM RATINGS Rating Symbol Collector −Emitter Voltage Value VCEO MMBTA05LT1 MMBTA06LT1 Collector −Base Voltage VCBO Collector Current − Continuous
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MMBTA05LT1,
MMBTA06LT1
MMBTA06LT1
MMBTA05LT1
OT-23
100-6 SOT-23
1GM x
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MMBTA06LT1G
Abstract: MMBTA06LT1 1GM sot-23 MMBTA05 MMBTA05LT1 MMBTA05LT1G MMBTA05LT3G MMBTA06 MMBTA06LT3G
Text: MMBTA05LT1G, MMBTA06LT1G Driver Transistors NPN Silicon http://onsemi.com Features • These Devices are Pb−Free, Halogen Free/BFR Free and are RoHS COLLECTOR 3 Compliant 1 BASE MAXIMUM RATINGS Rating Symbol Collector −Emitter Voltage MMBTA05LT1 MMBTA06LT1
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MMBTA05LT1G,
MMBTA06LT1G
MMBTA05LT1
MMBTA06LT1
MMBTA05LT1/D
MMBTA06LT1G
MMBTA06LT1
1GM sot-23
MMBTA05
MMBTA05LT1
MMBTA05LT1G
MMBTA05LT3G
MMBTA06
MMBTA06LT3G
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1GM H
Abstract: Marking 1GM 1GM 5 LMBTA05LT1G LMBTA06LT1G 1gm sot 23 marking 1h 1gm marking
Text: LESHAN RADIO COMPANY, LTD. Driver Transistors LMBTA05LT1G LMBTA06LT1G FEATURES • We declare that the material of product 3 compliance with RoHS requirements. 1 MAXIMUM RATINGS Rating 2 Symbol Value LMBTA05 LMBTA06 Unit Collector–Emitter Voltage V CEO 60
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LMBTA05LT1G
LMBTA06LT1G
LMBTA05
LMBTA06
LMBTA05LT1G
OT-23
1GM H
Marking 1GM
1GM 5
LMBTA06LT1G
1gm sot 23
marking 1h
1gm marking
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SMMBTA06LT1G
Abstract: No abstract text available
Text: MMBTA05L, MMBTA06L, SMMBTA06L Driver Transistors NPN Silicon http://onsemi.com Features • AEC−Q101 Qualified and PPAP Capable • S Prefix for Automotive and Other Applications Requiring Unique • Site and Control Change Requirements These Devices are Pb−Free, Halogen Free/BFR Free and are RoHS
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MMBTA05L,
MMBTA06L,
SMMBTA06L
AEC-Q101
MMBTA05LT1
MMBTA06LT1,
SMMBTA06LT1
SMMBTA06LT1G
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MMBTA06LT1G
Abstract: MMBTA06LT3G MMBTA05 MMBTA05LT1 MMBTA05LT1G MMBTA05LT3G MMBTA06 MMBTA06LT1 marking code 1GM
Text: MMBTA05LT1G, MMBTA06LT1G Driver Transistors NPN Silicon http://onsemi.com Features • These Devices are Pb−Free, Halogen Free/BFR Free and are RoHS COLLECTOR 3 Compliant 1 BASE MAXIMUM RATINGS Rating Symbol Collector −Emitter Voltage MMBTA05LT1 MMBTA06LT1
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MMBTA05LT1G,
MMBTA06LT1G
MMBTA05LT1
MMBTA06LT1
MMBTA05LT1/D
MMBTA06LT1G
MMBTA06LT3G
MMBTA05
MMBTA05LT1
MMBTA05LT1G
MMBTA05LT3G
MMBTA06
MMBTA06LT1
marking code 1GM
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Untitled
Abstract: No abstract text available
Text: MMBTA05L, MMBTA06L Driver Transistors NPN Silicon Features • S and NSV Prefix for Automotive and Other Applications Requiring • http://onsemi.com Unique Site and Control Change Requirements; AEC−Q101 Qualified and PPAP Capable These Devices are Pb−Free, Halogen Free/BFR Free and are RoHS
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MMBTA05L,
MMBTA06L
MMBTA05L
MMBTA05LT1/D
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SMMBTA06LT1G
Abstract: No abstract text available
Text: MMBTA05L, MMBTA06L, SMMBTA06L Driver Transistors NPN Silicon http://onsemi.com Features • S Prefix for Automotive and Other Applications Requiring Unique • Site and Control Change Requirements; AEC−Q101 Qualified and PPAP Capable These Devices are Pb−Free, Halogen Free/BFR Free and are RoHS
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MMBTA05L,
MMBTA06L,
SMMBTA06L
AEC-Q101
MMBTA05LT1
MMBTA06LT1,
SMMBTA06LT1
SMMBTA06LT1G
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1GM x
Abstract: 1GM x sot-23 transistor 1GM sot-23 1GM sot-23 transistor MMBTA05 MMBTA05LT1 MMBTA06 MMBTA06LT1
Text: MMBTA05LT1, MMBTA06LT1 MMBTA06LT1 is a Preferred Device Driver Transistors NPN Silicon http://onsemi.com MAXIMUM RATINGS Rating Symbol Collector–Emitter Voltage Value Unit VCEO MMBTA05LT1 MMBTA06LT1 Collector–Base Voltage 60 80 VCBO MMBTA05LT1 MMBTA06LT1
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MMBTA05LT1,
MMBTA06LT1
MMBTA06LT1
MMBTA05LT1
r14525
MMBTA05LT1/D
1GM x
1GM x sot-23 transistor
1GM sot-23
1GM sot-23 transistor
MMBTA05
MMBTA05LT1
MMBTA06
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SMMBTA06LT1G
Abstract: SMMBTA06LT1 canada ices class b Marking 1GM MMBTA05
Text: MMBTA05L, MMBTA06L, SMMBTA06L Driver Transistors NPN Silicon http://onsemi.com Features • S Prefix for Automotive and Other Applications Requiring Unique • Site and Control Change Requirements; AEC−Q101 Qualified and PPAP Capable These Devices are Pb−Free, Halogen Free/BFR Free and are RoHS
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MMBTA05L,
MMBTA06L,
SMMBTA06L
AEC-Q101
MMBTA05LT1
MMBTA06LT1,
SMMBTA06LT1
SMMBTA06LT1G
canada ices class b
Marking 1GM
MMBTA05
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Untitled
Abstract: No abstract text available
Text: MMBTA05L, MMBTA06L, SMMBTA06L Driver Transistors NPN Silicon http://onsemi.com Features • S Prefix for Automotive and Other Applications Requiring Unique • Site and Control Change Requirements; AEC−Q101 Qualified and PPAP Capable These Devices are Pb−Free, Halogen Free/BFR Free and are RoHS
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MMBTA05L,
MMBTA06L,
SMMBTA06L
MMBTA05LT1
MMBTA06LT1,
SMMBTA06LT1
MMBTA05LT1/D
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1GM sot-23 transistor
Abstract: 1GM sot-23 MMBTA05 MMBTA05LT1 MMBTA06 MMBTA06LT1
Text: MOTOROLA Order this document by MMBTA05LT1/D SEMICONDUCTOR TECHNICAL DATA MMBTA05LT1 MMBTA06LT1* Driver Transistors NPN Silicon COLLECTOR 3 *Motorola Preferred Device 1 BASE 3 2 EMITTER MAXIMUM RATINGS 1 2 Rating Symbol MMBTA05 MMBTA06 Unit Collector – Emitter Voltage
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MMBTA05LT1/D
MMBTA05LT1
MMBTA06LT1*
MMBTA05
MMBTA06
236AB)
MMBTA05LT1/D*
1GM sot-23 transistor
1GM sot-23
MMBTA05
MMBTA05LT1
MMBTA06
MMBTA06LT1
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Untitled
Abstract: No abstract text available
Text: JIANGSU CHANGJIANG ELECTRONICS TECHNOLOGY CO., LTD SOT-23 Plastic-Encapsulate Transistors SOT—23 MMBTA06LT1 TRANSISTOR( NPN ) 1. BASE 2. EMITTER 3. COLLECTOR FEATURES 1.0 Power dissipation PCM : 0.3 W(Tamb=25℃) Collector current ICM : 0.5
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OT-23
MMBTA06LT1
100MHz
037TPY
950TPY
550REF
022REF
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1GM sot-23
Abstract: MMBTA05 MMBTA05LT1 MMBTA06 MMBTA06LT1
Text: MOTOROLA Order this document by MMBTA05LT1/D SEMICONDUCTOR TECHNICAL DATA MMBTA05LT1 MMBTA06LT1* Driver Transistors NPN Silicon COLLECTOR 3 *Motorola Preferred Device 1 BASE 3 2 EMITTER MAXIMUM RATINGS 1 2 Rating Symbol MMBTA05 MMBTA06 Unit Collector – Emitter Voltage
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MMBTA05LT1/D
MMBTA05LT1
MMBTA06LT1*
MMBTA05
MMBTA06
236AB)
MMBTA05LT1/D*
1GM sot-23
MMBTA05
MMBTA05LT1
MMBTA06
MMBTA06LT1
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Untitled
Abstract: No abstract text available
Text: ON Semiconductort MMBTA05LT1 MMBTA06LT1 Driver Transistors NPN Silicon MMBTA06LT1 us a Preferred Device MAXIMUM RATINGS Rating Symbol MMBTA05 MMBTA06 Unit Collector–Emitter Voltage VCEO 60 80 Vdc Collector–Base Voltage VCBO 60 80 Vdc Emitter–Base Voltage
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MMBTA05
MMBTA06
MMBTA05LT1
MMBTA06LT1
MMBTA06LT1
r14525
MMBTA05LT1/D
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1GM x sot-23 transistor
Abstract: 1GM sot-23 Marking 1GM MMBTA06LT1 1gm transistor MMBTA05 MMBTA05LT1 MMBTA06 2M252
Text: LESHAN RADIO COMPANY, LTD. Driver Transistors NPN Silicon MMBTA05LT1 MMBTA06LT1 3 COLLECTOR 1 BASE 3 2 EMITTER 1 MAXIMUM RATINGS Rating 2 Symbol Value MMBTA05 MMBTA06 Unit Collector–Emitter Voltage V CEO 60 80 Vdc Collector–Base Voltage V CBO 60 80 Vdc
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MMBTA05LT1
MMBTA06LT1
MMBTA05
MMBTA06
236AB)
MMBTA05LT1
1GM x sot-23 transistor
1GM sot-23
Marking 1GM
MMBTA06LT1
1gm transistor
MMBTA06
2M252
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Untitled
Abstract: No abstract text available
Text: Driver Transistors NPN Silicon MMBTA05LT1 MMBTA06LT1 3 COLLECTOR 1 BASE 3 2 EMITTER 1 MAXIMUM RATINGS Rating Symbol 2 Value MMBTA05 MMBTA06 Unit Collector–Emitter Voltage V CEO 60 80 Vdc Collector–Base Voltage V CBO 60 80 Vdc Emitter–Base Voltage V Collector Current — Continuous
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MMBTA05LT1
MMBTA06LT1
MMBTA05
MMBTA06
236AB)
MMBTA05LT1
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1GM sot-23 transistor
Abstract: 1GM x sot-23 transistor 1GM sot-23 1gm sot 23 1GM LMBTA05LT1 LMBTA05LT1 LMBTA05LT1G LMBTA06LT1 LMBTA06LT1G
Text: LESHAN RADIO COMPANY, LTD. Driver Transistors LMBTA05LT1 LMBTA06LT1 FEATURES • Pb−Free Package May be Available. The G−Suffix Denotes a 3 Pb−Free Lead Finish 1 MAXIMUM RATINGS Rating 2 Symbol Value LMBTA05 LMBTA06 Unit Collector–Emitter Voltage V CEO
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LMBTA05LT1
LMBTA06LT1
LMBTA05
LMBTA06
LMBTA05LT1
OT-23
LMBTA05/06-3/3
1GM sot-23 transistor
1GM x sot-23 transistor
1GM sot-23
1gm sot 23
1GM LMBTA05LT1
LMBTA05LT1G
LMBTA06LT1
LMBTA06LT1G
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1GM sot-23 transistor
Abstract: No abstract text available
Text: : S v m S : e m i 5YM5EMI SEMICONDUCTOR SOT -23 Plastic Encapsulate Transistors SOT — 23 MMBTA06LT1 TRANSISTOR NPN 1. BASE 2. EMITTER 3. COLLECTOR FEATURES Power dissipation PCM : 0.3 W (Tamb=25 °C) 2. 1 Collector current 1cm * 1.3 0.5 A Collector base voltage
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OCR Scan
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MMBTA06LT1
OT-23
950TPY
037TPY
550REF
022REF
1GM sot-23 transistor
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