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    1GM SOT-23 TRANSISTOR Search Results

    1GM SOT-23 TRANSISTOR Result Highlights (5)

    Part ECAD Model Manufacturer Description Download Buy
    SSM3K361R Toshiba Electronic Devices & Storage Corporation MOSFET, N-ch, 100 V, 3.5 A, 0.069 Ohm@10V, SOT-23F, AEC-Q101 Visit Toshiba Electronic Devices & Storage Corporation
    SSM3K341R Toshiba Electronic Devices & Storage Corporation MOSFET, N-ch, 60 V, 6.0 A, 0.036 Ohm@10V, SOT-23F, AEC-Q101 Visit Toshiba Electronic Devices & Storage Corporation
    TTC5886A Toshiba Electronic Devices & Storage Corporation NPN Bipolar Transistor / hFE=400~1000 / VCE(sat)=0.22V / tf=120ns Visit Toshiba Electronic Devices & Storage Corporation
    TTA2097 Toshiba Electronic Devices & Storage Corporation PNP Bipolar Transistor / hFE=200~500 / VCE(sat)=-0.27V / tf=60ns Visit Toshiba Electronic Devices & Storage Corporation
    7UL2T125FK Toshiba Electronic Devices & Storage Corporation One-Gate Logic(L-MOS), Buffer, SOT-765 (US8), -40 to 85 degC Visit Toshiba Electronic Devices & Storage Corporation

    1GM SOT-23 TRANSISTOR Datasheets Context Search

    Catalog Datasheet MFG & Type PDF Document Tags

    Untitled

    Abstract: No abstract text available
    Text: JIANGSU CHANGJIANG ELECTRONICS TECHNOLOGY CO., LTD SOT-23 Plastic-Encapsulate Transistors MMBTA06 TRANSISTOR NPN SOT–23 FEATURES  For Switching and Amplifier Applications  Complementary Type PNP Transistor MMBTA56 MARKING: 1GM 1. BASE MAXIMUM RATINGS (Ta=25℃ unless otherwise noted)


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    PDF OT-23 MMBTA06 MMBTA56

    1gm transistor

    Abstract: 1GM sot-23 transistor
    Text: JIANGSU CHANGJIANG ELECTRONICS TECHNOLOGY CO., LTD SOT-23 Plastic-Encapsulate Transistors MMBTA06 TRANSISTOR NPN SOT–23 FEATURES  For Switching and Amplifier Applications  Complementary Type PNP Transistor MMBTA56 MARKING: 1GM 1. BASE MAXIMUM RATINGS (Ta=25℃ unless otherwise noted)


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    PDF OT-23 MMBTA06 MMBTA56 100mA 100mA, 100MHz 1gm transistor 1GM sot-23 transistor

    Untitled

    Abstract: No abstract text available
    Text: LESHAN RADIO COMPANY, LTD. Driver Transistors LMBTA05LT1G LMBTA06LT1G FEATURES • Pb−Free Package May be Available. The G−Suffix Denotes a 3 Pb−Free Lead Finish 1 MAXIMUM RATINGS Rating 2 Symbol Value LMBTA05 LMBTA06 Unit Collector–Emitter Voltage


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    PDF LMBTA05LT1G LMBTA06LT1G LMBTA05 LMBTA06

    MMBTA05LT1G

    Abstract: 1GM sot-23 MMBTA05 MMBTA05LT1 MMBTA05LT3 MMBTA05LT3G MMBTA06 MMBTA06LT1 MMBTA06LT1G MMBTA06LT3
    Text: MMBTA05LT1, MMBTA06LT1 MMBTA06LT1 is a Preferred Device Driver Transistors NPN Silicon Features • Pb−Free Packages are Available COLLECTOR 3 MAXIMUM RATINGS Rating Symbol Collector −Emitter Voltage MMBTA05LT1 MMBTA06LT1 VCEO Collector −Base Voltage


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    PDF MMBTA05LT1, MMBTA06LT1 MMBTA06LT1 MMBTA05LT1 MMBTA05LT1G 1GM sot-23 MMBTA05 MMBTA05LT1 MMBTA05LT3 MMBTA05LT3G MMBTA06 MMBTA06LT1G MMBTA06LT3

    Untitled

    Abstract: No abstract text available
    Text: LESHAN RADIO COMPANY, LTD. Driver Transistors LMBTA05LT1G LMBTA06LT1G S-LMBTA05LT1G S-LMBTA06LT1G FEATURES • We declare that the material of product compliance with RoHS requirements. • S- Prefix for Automotive and Other Applications Requiring Unique Site and Control Change Requirements; AEC-Q101


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    PDF LMBTA05LT1G LMBTA06LT1G S-LMBTA05LT1G S-LMBTA06LT1G AEC-Q101 LMBTA05 LMBTA06 S-LMBTA05LT1G

    MMBTA05

    Abstract: MMBTA06LT1 MMBTA06LT3G MMBT MMBTA05LT1 MMBTA05LT1G MMBTA05LT3 MMBTA05LT3G MMBTA06 MMBTA06LT1G
    Text: MMBTA05LT1, MMBTA06LT1 MMBTA06LT1 is a Preferred Device Driver Transistors NPN Silicon http://onsemi.com Features • Pb−Free Packages are Available COLLECTOR 3 MAXIMUM RATINGS Rating Symbol Collector −Emitter Voltage MMBTA05LT1 MMBTA06LT1 VCEO Collector −Base Voltage


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    PDF MMBTA05LT1, MMBTA06LT1 MMBTA06LT1 MMBTA05LT1 MMBTA05LT1/D MMBTA05 MMBTA06LT3G MMBT MMBTA05LT1 MMBTA05LT1G MMBTA05LT3 MMBTA05LT3G MMBTA06 MMBTA06LT1G

    100-6 SOT-23

    Abstract: 1GM x
    Text: MMBTA05LT1, MMBTA06LT1 MMBTA06LT1 is a Preferred Device Driver Transistors NPN Silicon http://onsemi.com MAXIMUM RATINGS Rating Symbol Collector −Emitter Voltage Value VCEO MMBTA05LT1 MMBTA06LT1 Collector −Base Voltage VCBO Collector Current − Continuous


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    PDF MMBTA05LT1, MMBTA06LT1 MMBTA06LT1 MMBTA05LT1 OT-23 100-6 SOT-23 1GM x

    MMBTA06LT1G

    Abstract: MMBTA06LT1 1GM sot-23 MMBTA05 MMBTA05LT1 MMBTA05LT1G MMBTA05LT3G MMBTA06 MMBTA06LT3G
    Text: MMBTA05LT1G, MMBTA06LT1G Driver Transistors NPN Silicon http://onsemi.com Features • These Devices are Pb−Free, Halogen Free/BFR Free and are RoHS COLLECTOR 3 Compliant 1 BASE MAXIMUM RATINGS Rating Symbol Collector −Emitter Voltage MMBTA05LT1 MMBTA06LT1


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    PDF MMBTA05LT1G, MMBTA06LT1G MMBTA05LT1 MMBTA06LT1 MMBTA05LT1/D MMBTA06LT1G MMBTA06LT1 1GM sot-23 MMBTA05 MMBTA05LT1 MMBTA05LT1G MMBTA05LT3G MMBTA06 MMBTA06LT3G

    1GM H

    Abstract: Marking 1GM 1GM 5 LMBTA05LT1G LMBTA06LT1G 1gm sot 23 marking 1h 1gm marking
    Text: LESHAN RADIO COMPANY, LTD. Driver Transistors LMBTA05LT1G LMBTA06LT1G FEATURES • We declare that the material of product 3 compliance with RoHS requirements. 1 MAXIMUM RATINGS Rating 2 Symbol Value LMBTA05 LMBTA06 Unit Collector–Emitter Voltage V CEO 60


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    PDF LMBTA05LT1G LMBTA06LT1G LMBTA05 LMBTA06 LMBTA05LT1G OT-23 1GM H Marking 1GM 1GM 5 LMBTA06LT1G 1gm sot 23 marking 1h 1gm marking

    SMMBTA06LT1G

    Abstract: No abstract text available
    Text: MMBTA05L, MMBTA06L, SMMBTA06L Driver Transistors NPN Silicon http://onsemi.com Features • AEC−Q101 Qualified and PPAP Capable • S Prefix for Automotive and Other Applications Requiring Unique • Site and Control Change Requirements These Devices are Pb−Free, Halogen Free/BFR Free and are RoHS


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    PDF MMBTA05L, MMBTA06L, SMMBTA06L AEC-Q101 MMBTA05LT1 MMBTA06LT1, SMMBTA06LT1 SMMBTA06LT1G

    MMBTA06LT1G

    Abstract: MMBTA06LT3G MMBTA05 MMBTA05LT1 MMBTA05LT1G MMBTA05LT3G MMBTA06 MMBTA06LT1 marking code 1GM
    Text: MMBTA05LT1G, MMBTA06LT1G Driver Transistors NPN Silicon http://onsemi.com Features • These Devices are Pb−Free, Halogen Free/BFR Free and are RoHS COLLECTOR 3 Compliant 1 BASE MAXIMUM RATINGS Rating Symbol Collector −Emitter Voltage MMBTA05LT1 MMBTA06LT1


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    PDF MMBTA05LT1G, MMBTA06LT1G MMBTA05LT1 MMBTA06LT1 MMBTA05LT1/D MMBTA06LT1G MMBTA06LT3G MMBTA05 MMBTA05LT1 MMBTA05LT1G MMBTA05LT3G MMBTA06 MMBTA06LT1 marking code 1GM

    Untitled

    Abstract: No abstract text available
    Text: MMBTA05L, MMBTA06L Driver Transistors NPN Silicon Features • S and NSV Prefix for Automotive and Other Applications Requiring • http://onsemi.com Unique Site and Control Change Requirements; AEC−Q101 Qualified and PPAP Capable These Devices are Pb−Free, Halogen Free/BFR Free and are RoHS


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    PDF MMBTA05L, MMBTA06L MMBTA05L MMBTA05LT1/D

    SMMBTA06LT1G

    Abstract: No abstract text available
    Text: MMBTA05L, MMBTA06L, SMMBTA06L Driver Transistors NPN Silicon http://onsemi.com Features • S Prefix for Automotive and Other Applications Requiring Unique • Site and Control Change Requirements; AEC−Q101 Qualified and PPAP Capable These Devices are Pb−Free, Halogen Free/BFR Free and are RoHS


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    PDF MMBTA05L, MMBTA06L, SMMBTA06L AEC-Q101 MMBTA05LT1 MMBTA06LT1, SMMBTA06LT1 SMMBTA06LT1G

    1GM x

    Abstract: 1GM x sot-23 transistor 1GM sot-23 1GM sot-23 transistor MMBTA05 MMBTA05LT1 MMBTA06 MMBTA06LT1
    Text: MMBTA05LT1, MMBTA06LT1 MMBTA06LT1 is a Preferred Device Driver Transistors NPN Silicon http://onsemi.com MAXIMUM RATINGS Rating Symbol Collector–Emitter Voltage Value Unit VCEO MMBTA05LT1 MMBTA06LT1 Collector–Base Voltage 60 80 VCBO MMBTA05LT1 MMBTA06LT1


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    PDF MMBTA05LT1, MMBTA06LT1 MMBTA06LT1 MMBTA05LT1 r14525 MMBTA05LT1/D 1GM x 1GM x sot-23 transistor 1GM sot-23 1GM sot-23 transistor MMBTA05 MMBTA05LT1 MMBTA06

    SMMBTA06LT1G

    Abstract: SMMBTA06LT1 canada ices class b Marking 1GM MMBTA05
    Text: MMBTA05L, MMBTA06L, SMMBTA06L Driver Transistors NPN Silicon http://onsemi.com Features • S Prefix for Automotive and Other Applications Requiring Unique • Site and Control Change Requirements; AEC−Q101 Qualified and PPAP Capable These Devices are Pb−Free, Halogen Free/BFR Free and are RoHS


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    PDF MMBTA05L, MMBTA06L, SMMBTA06L AEC-Q101 MMBTA05LT1 MMBTA06LT1, SMMBTA06LT1 SMMBTA06LT1G canada ices class b Marking 1GM MMBTA05

    Untitled

    Abstract: No abstract text available
    Text: MMBTA05L, MMBTA06L, SMMBTA06L Driver Transistors NPN Silicon http://onsemi.com Features • S Prefix for Automotive and Other Applications Requiring Unique • Site and Control Change Requirements; AEC−Q101 Qualified and PPAP Capable These Devices are Pb−Free, Halogen Free/BFR Free and are RoHS


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    PDF MMBTA05L, MMBTA06L, SMMBTA06L MMBTA05LT1 MMBTA06LT1, SMMBTA06LT1 MMBTA05LT1/D

    1GM sot-23 transistor

    Abstract: 1GM sot-23 MMBTA05 MMBTA05LT1 MMBTA06 MMBTA06LT1
    Text: MOTOROLA Order this document by MMBTA05LT1/D SEMICONDUCTOR TECHNICAL DATA MMBTA05LT1 MMBTA06LT1* Driver Transistors NPN Silicon COLLECTOR 3 *Motorola Preferred Device 1 BASE 3 2 EMITTER MAXIMUM RATINGS 1 2 Rating Symbol MMBTA05 MMBTA06 Unit Collector – Emitter Voltage


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    PDF MMBTA05LT1/D MMBTA05LT1 MMBTA06LT1* MMBTA05 MMBTA06 236AB) MMBTA05LT1/D* 1GM sot-23 transistor 1GM sot-23 MMBTA05 MMBTA05LT1 MMBTA06 MMBTA06LT1

    Untitled

    Abstract: No abstract text available
    Text: JIANGSU CHANGJIANG ELECTRONICS TECHNOLOGY CO., LTD SOT-23 Plastic-Encapsulate Transistors SOT—23 MMBTA06LT1 TRANSISTOR( NPN ) 1. BASE 2. EMITTER 3. COLLECTOR FEATURES 1.0 Power dissipation PCM : 0.3 W(Tamb=25℃) Collector current ICM : 0.5


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    PDF OT-23 MMBTA06LT1 100MHz 037TPY 950TPY 550REF 022REF

    1GM sot-23

    Abstract: MMBTA05 MMBTA05LT1 MMBTA06 MMBTA06LT1
    Text: MOTOROLA Order this document by MMBTA05LT1/D SEMICONDUCTOR TECHNICAL DATA MMBTA05LT1 MMBTA06LT1* Driver Transistors NPN Silicon COLLECTOR 3 *Motorola Preferred Device 1 BASE 3 2 EMITTER MAXIMUM RATINGS 1 2 Rating Symbol MMBTA05 MMBTA06 Unit Collector – Emitter Voltage


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    PDF MMBTA05LT1/D MMBTA05LT1 MMBTA06LT1* MMBTA05 MMBTA06 236AB) MMBTA05LT1/D* 1GM sot-23 MMBTA05 MMBTA05LT1 MMBTA06 MMBTA06LT1

    Untitled

    Abstract: No abstract text available
    Text: ON Semiconductort MMBTA05LT1 MMBTA06LT1 Driver Transistors NPN Silicon MMBTA06LT1 us a Preferred Device MAXIMUM RATINGS Rating Symbol MMBTA05 MMBTA06 Unit Collector–Emitter Voltage VCEO 60 80 Vdc Collector–Base Voltage VCBO 60 80 Vdc Emitter–Base Voltage


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    PDF MMBTA05 MMBTA06 MMBTA05LT1 MMBTA06LT1 MMBTA06LT1 r14525 MMBTA05LT1/D

    1GM x sot-23 transistor

    Abstract: 1GM sot-23 Marking 1GM MMBTA06LT1 1gm transistor MMBTA05 MMBTA05LT1 MMBTA06 2M252
    Text: LESHAN RADIO COMPANY, LTD. Driver Transistors NPN Silicon MMBTA05LT1 MMBTA06LT1 3 COLLECTOR 1 BASE 3 2 EMITTER 1 MAXIMUM RATINGS Rating 2 Symbol Value MMBTA05 MMBTA06 Unit Collector–Emitter Voltage V CEO 60 80 Vdc Collector–Base Voltage V CBO 60 80 Vdc


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    PDF MMBTA05LT1 MMBTA06LT1 MMBTA05 MMBTA06 236AB) MMBTA05LT1 1GM x sot-23 transistor 1GM sot-23 Marking 1GM MMBTA06LT1 1gm transistor MMBTA06 2M252

    Untitled

    Abstract: No abstract text available
    Text: Driver Transistors NPN Silicon MMBTA05LT1 MMBTA06LT1 3 COLLECTOR 1 BASE 3 2 EMITTER 1 MAXIMUM RATINGS Rating Symbol 2 Value MMBTA05 MMBTA06 Unit Collector–Emitter Voltage V CEO 60 80 Vdc Collector–Base Voltage V CBO 60 80 Vdc Emitter–Base Voltage V Collector Current — Continuous


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    PDF MMBTA05LT1 MMBTA06LT1 MMBTA05 MMBTA06 236AB) MMBTA05LT1

    1GM sot-23 transistor

    Abstract: 1GM x sot-23 transistor 1GM sot-23 1gm sot 23 1GM LMBTA05LT1 LMBTA05LT1 LMBTA05LT1G LMBTA06LT1 LMBTA06LT1G
    Text: LESHAN RADIO COMPANY, LTD. Driver Transistors LMBTA05LT1 LMBTA06LT1 FEATURES • Pb−Free Package May be Available. The G−Suffix Denotes a 3 Pb−Free Lead Finish 1 MAXIMUM RATINGS Rating 2 Symbol Value LMBTA05 LMBTA06 Unit Collector–Emitter Voltage V CEO


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    PDF LMBTA05LT1 LMBTA06LT1 LMBTA05 LMBTA06 LMBTA05LT1 OT-23 LMBTA05/06-3/3 1GM sot-23 transistor 1GM x sot-23 transistor 1GM sot-23 1gm sot 23 1GM LMBTA05LT1 LMBTA05LT1G LMBTA06LT1 LMBTA06LT1G

    1GM sot-23 transistor

    Abstract: No abstract text available
    Text: : S v m S : e m i 5YM5EMI SEMICONDUCTOR SOT -23 Plastic Encapsulate Transistors SOT — 23 MMBTA06LT1 TRANSISTOR NPN 1. BASE 2. EMITTER 3. COLLECTOR FEATURES Power dissipation PCM : 0.3 W (Tamb=25 °C) 2. 1 Collector current 1cm * 1.3 0.5 A Collector base voltage


    OCR Scan
    PDF MMBTA06LT1 OT-23 950TPY 037TPY 550REF 022REF 1GM sot-23 transistor