1H SOT23 Search Results

all transistor book

Abstract: smd code book transistor AEA03244
Contextual Info: TLE4976-1H 2-Wire High Precision Hall-Effect Switch TLE4976-1H Target Data, Version 1.6 Features • • • • • • • • • • • • • 2-wire current interface 6/14 mA 3.0 V to 26 V supply voltage operation Operation from unregulated power supply

FMMTA05R

Abstract: FMMTA06R FMMTA05R-NA FMMTA06 FMMTA05 FMMTA05-1H FMMT-A05 DSA003702
Contextual Info: FMMTA05 FMMTA06 SOT23 NPN SILICON PLANAR MEDIUM POWER TRANSISTORS ISSUE 4 – JUNE 1996 FEATURES * 80 Volt VCEO * Gain of 50 at IC=100mA PARTMARKING DETAIL – E C FMMTA05 – 1H FMMTA06 – 1G FMMTA05R – NA FMMTA06R – MA B SOT23 ABSOLUTE MAXIMUM RATINGS. PARAMETER

MMBTA05

Abstract: marking 1h
Contextual Info: JIANGSU CHANGJIANG ELECTRONICS TECHNOLOGY CO., LTD SOT-23 Plastic-Encapsulate Transistors MMBTA05 SOT-23 TRANSISTOR NPN FEATURES Driver transistor 1. BASE 2. EMITTER 3. COLLECTOR MARKING :1H MAXIMUM RATINGS (TA=25℃ unless otherwise noted) Symbol Parameter

Contextual Info: JIANGSU CHANGJIANG ELECTRONICS TECHNOLOGY CO., LTD SOT-23 Plastic-Encapsulate Transistors MMBTA05 SOT-23 TRANSISTOR NPN FEATURES Driver transistor 1. BASE 2. EMITTER 3. COLLECTOR MARKING :1H MAXIMUM RATINGS (Ta=25℃ unless otherwise noted) Symbol Parameter

BAV99 SOT 23

Abstract: BAV99 UU120
Contextual Info: BAV99 9 D iscrete POWER & S ign al Technologies National Semiconductor" BAV99 CONNECTION DIAGRAM 1H SOT-23 High Conductance Ultra Fast Diode Sourced from Process 1P. Absolute Maximum Ratings* TA = 25°C unless otherwise noted Parameter Symbol Value Units

KST3906 samsung

Abstract: BCW71 AG LC-1010
Contextual Info: SAMSUNG ELECTRONICS INC bOE D • TTbMlME 0011523 TTO HSriGK TRANSISTORS FUNCTION GUIDE 1. SMALL SIGNAL TRANSISTORS 1.1 General Purpose Transistors 1.1.1 SOT-23 Type Transistors Condition Device and Polarity Marking NPN KST06(1G) KST05(1H) KSC1623(C1X) PNP

a06 smd transistor

Abstract: A06 SMD SMD A06 smd marking A06 A05 smd a06 transistor transistor A05 marking A06 CMBTA05 CMBTA06
Contextual Info: Continental Device India Limited An ISO/TS16949 and ISO 9001 Certified Company SOT-23 Formed SMD Package CMBTA05 CMBTA06 SILICON EPITAXIAL TRANSISTORS N–P–N transistor Marking CMBTA05 = 1H CMBTA06 = 1G PACKAGE OUTLINE DETAILS ALL DIMENSIONS IN mm Pin configuration

A06 smd

Abstract: A06 smd transistor SMD A06 a06 transistor A05 smd A05 SOT marking a06 CMBTA05 CMBTA06 transistor A06
Contextual Info: Continental Device India Limited An ISO/TS 16949, ISO 9001 and ISO 14001 Certified Company SOT-23 Formed SMD Package CMBTA05 CMBTA06 SILICON EPITAXIAL TRANSISTORS N–P–N transistor Marking CMBTA05 = 1H CMBTA06 = 1G PACKAGE OUTLINE DETAILS ALL DIMENSIONS IN mm

A06 smd transistor

Contextual Info: IS/ISO 9002 Lic# QSC/L- 000019.2 Continental Device India Limited IS / IECQC 700000 IS / IECQC 750100 An IS/ISO 9002 and IECQ Certified Manufacturer SOT-23 Formed SMD Package CMBTA05 CMBTA06 SILICON EPITAXIAL TRANSISTORS N–P–N transistor Marking CMBTA05 = 1H

Contextual Info: Continental Device India Limited An ISO/TS 16949, ISO 9001 and ISO 14001 Certified Company SOT-23 Formed SMD Package CMBTA05 CMBTA06 SILICON EPITAXIAL TRANSISTORS N–P–N transisto r Marking CMBTA05 = 1H CMBTA06 = 1G PACKAGE OUTLINE DETAILS ALL DIMENSIONS IN mm

ASM5P23S05A

Abstract: ASM5P23S05A-1 ASM5P23S09A ASM5P23S09A-1 5I23S05AF 5p23s05af 5P23S05AF-1H
Contextual Info: ASM5P23S09A ASM5P23S05A November 2004 rev 1.3 3.3V ‘SpreadTrak’ Zero Delay Buffer General Features out five low-skew clocks. 15 MHz to 133 MHz operating range, compatible The -1H version of the ASM5P23SxxA operates at up to with CPU and PCI bus frequencies.

Contextual Info: Continental Device India Limited An ISO/TS 16949, ISO 9001 and ISO 14001 Certified Company SOT-23 Formed SMD Package BC846 BC847 BC848 SILICON PLANAR EPITAXIAL TRANSISTORS General purpose N–P–N transistors Marking BC846 = 1D BC846A = 1A BC846B = 1B BC847 = 1H

BAS35

Abstract: MMBD1401
Contextual Info: BAS35 BAS35 CONNECTION DIAGRAMS 3 3 3 29 2 SOT-23 1 2 1 2 1 General Purpose High Voltage Diode Sourced from Process 1H. See MMBD1401 for characteristics. Absolute Maximum Ratings* Symbol W IV TA = 25°C unless otherwise noted Parameter Working Inverse Voltage

SOT23 M

Abstract: 100S BAS31 MA840 GENERAL PURPOSE DIODE
Contextual Info: BAS31 9 D iscrete POWER & S ign al Technologies National Semiconductor" BAS31 M CONNECTION DIAGRAM SOT-23 High Voltage General Purpose Diode Sourced from Process 1H. Absolute Maximum Ratings* T A = 2 5 ° C unless o th e rw ise noted Parameter Symbol Value

MOSFET MARKING 3F

Abstract: BT3904 sot23 s07 marking 702 sot23 Diode marking CODE 1M transistor marking 6c 2F PNP SOT23 marking code 2f 2F P marking NA MARKING SOT23
Contextual Info: Surface M o u n t Transistors NPN Transistors/SOT23 Type Num ber M arking Code* VcEO Volts 1P IN 2X 40 40 40 MMBTA05 MMBTA06 MMBT5551 1H 1G 3S MMBTA42 ID MMBT2222A IMBT/MMBT3904 MMBT4401 hpE@ VCE/IC VcE SAT@ Ic/Ib fT @ VCE/IC Cqb @ Vcb V/m A max.V mA/m A MHz

BAS21

Abstract: MMBD1401 h7 sot23 diode FAIRCHILD DIODE
Contextual Info: BAS21 BAS21 CONNECTION DIAGRAM 3 3 3 A82. 2 SOT-23 1 2 2 NC 1 1 General Purpose High Voltage Diode Sourced from Process 1H. See MMBD1401 for characteristics. Absolute Maximum Ratings* Symbol TA = 25°C unless otherwise noted Value Units W IV Working Inverse Voltage

baw56 sot-23

Abstract: BAV99 BAW56
Contextual Info: BAW56 Discrete POWER & Signal Technologies 9 National Semiconductor" BAW56 CONNECTION 1H SOT-23 13 * 1 DIAGRAMS ET High Conductance Ultra Fast Diode Sourced from Process 1P. See BAV99 for characteristics. Absolute Maximum Ratings* T A = 2 5 ° C unless o th e rw ise noted

h7 sot23 diode

Abstract: marking A82 SOT-23 marking A82 diode marking EY diode A82
Contextual Info: BAS21 BAS21 CONNECTION DIAGRAM 3 3 3 A82. 2 SOT-23 1 2 2 NC 1 1 General Purpose High Voltage Diode Sourced from Process 1H. See MMBD1401 for characteristics. Absolute Maximum Ratings* Symbol TA = 25°C unless otherwise noted Value Units W IV Working Inverse Voltage

BAS31

Abstract: BAV19 259-C
Contextual Info: BAS31 e? Diserete POWER & Sign al Technologies National Semiconductor“ BAS31 CONNECTION DIAGRAM JH L21 TD— ET SOT-23 High Voltage General Purpose Diode Sourced 'from P rocess 1H. S e e B A V 1 9 / 2 0 / 2 1 for characteristics. Absolute Maximum Ratings*

marking code ce SOT23

Abstract: MOSFET MARKING 3F marking code 3a sot23 CE MARKING CODE
Contextual Info: Surface M ount Transistors NPN Transistors/SOT23 Type Num ber hpE @ VCE/IC M arking Code* Volts 1P IN 2X 40 40 40 MMBTA05 MMBTA06 MMBT5551 1H 1G 3S MMBTA42 1D MMBT2222A IMBT/MMBT3904 MMBT4401 V ceo V CE SAT @ Ic /lß fT @ V ce/I c Cqb @ VCB V/m A max.V m A/m A

BAS35

Abstract: MMBD1401
Contextual Info: BAS35 BAS35 Connection Diagrams 3 3 3 1405 L22 2 SOT-23 1 1 2 2 1 General Purpose High Voltage Diode Sourced from Process 1H. See MMBD1401 for characteristics. Absolute Maximum Ratings* Symbol W IV TA = 25°C unless otherwise noted Parameter Working Inverse Voltage

BAS21 on

Abstract: BAS21 MMBD1401 FAIRCHILD DIODE
Contextual Info: BAS21 BAS21 CONNECTION DIAGRAM 3 3 3 29 2 SOT-23 1 2 2 NC 1 1 General Purpose High Voltage Diode Sourced from Process 1H. See MMBD1401 for characteristics. Absolute Maximum Ratings* Symbol TA = 25°C unless otherwise noted Value Units W IV Working Inverse Voltage

BAS31

Abstract: BAV19
Contextual Info: BAS31 BAS31 CONNECTION DIAGRAM 3 3 3 L21 2 SOT-23 1 2 1 1 2 High Voltage General Purpose Diode Sourced from Process 1H. See BAV19 / 20 / 21 for characteristics. Absolute Maximum Ratings* Symbol TA = 25°C unless otherwise noted Parameter Value Units W IV Working Inverse Voltage

BAS31

Contextual Info: BAS31 Discrete POWER & Signal Technologies N BAS31 CONNECTION DIAGRAM 3 3 3 L21 2 1 2 1 SOT-23 2 1 High Voltage General Purpose Diode Sourced from Process 1H. Absolute Maximum Ratings* Symbol TA = 25°C unless otherwise noted Parameter Value Units W IV Working Inverse Voltage