1HF MARKING Search Results

Contextual Info: SN74ACT2227, SN74ACT2229 DUAL 64 x 1, DUAL 256 × 1 FIRST-IN, FIRST-OUT MEMORIES SCAS220C – JUNE 1992 – REVISED OCTOBER 1997 D D D D D D D D D D Dual Independent FIFOs Organized as: 64 Words by 1 Bit Each – SN74ACT2227 256 Words by 1 Bit Each – SN74ACT2229

Contextual Info: LESHAN RADIO COMPANY, LTD. General Purpose Transistors NPN Silicon L8550HXLT1G FEATURE 3 ƽHigh current capacity in compact package. IC =1.5A. 1 ƽEpitaxial planar type. 2 ƽPNP complement: L8550H ƽPb-Free Package is available. SOT–23 DEVICE MARKING AND ORDERING INFORMATION

1206 footprint dimension

Contextual Info: Low Profile Ceramic Chip Capacitors NMC-E Series CROSS SECTION OF PLASTIC LEADED CHIP CARRIER PLCC , (SOJ) • Z5U AND Y5V DIELECTRIC DECOUPLING CAPACITORS FOR SURFACE MOUNT MEMORY AND LOGIC CIRCUITS • LOW PROFILE IN STANDARD 0805, 1206 AND 1210 FOOTPRINT

L8550HQLT1G

Abstract: L8550HRLT1G
Contextual Info: LESHAN RADIO COMPANY, LTD. General Purpose Transistors PNP Silicon L8550HPLT1G Series S-L8550HPLT1G Series FEATURE ƽHigh current capacity in compact package. ƽEpitaxial planar type. ƽPNP complement: L8550H 3 ƽWe declare that the material of product compliance with RoHS requirements.

Contextual Info: LESHAN RADIO COMPANY, LTD. General Purpose Transistors PNP Silicon L8550HPLT1G Series FEATURE 3 ƽHigh current capacity in compact package. ƽEpitaxial planar type. 1 ƽPNP complement: L8550H 2 ƽWe declare that the material of product compliance with RoHS requirements.

Contextual Info: LESHAN RADIO COMPANY, LTD. General Purpose Transistors PNP Silicon L8550HPLT1G Series FEATURE 3 ƽHigh current capacity in compact package. ƽEpitaxial planar type. 1 ƽPNP complement: L8550H 2 ƽWe declare that the material of product compliance with RoHS requirements.

Contextual Info: LESHAN RADIO COMPANY, LTD. General Purpose Transistors PNP Silicon L8550HPLT1G Series 3 FEATURE ƽHigh current capacity in compact package. ƽEpitaxial planar type. 1 ƽPNP complement: L8550H 2 ƽWe declare that the material of product compliance with RoHS requirements.

sot-23 Marking 1HD

Abstract: L8550HRLT1G SOT-23 1HD 1hb marking L8550HPLT1G 1HF MARKING L8550HQLT1G L8550HSLT1G L8550 1Hd SOT23
Contextual Info: LESHAN RADIO COMPANY, LTD. General Purpose Transistors PNP Silicon L8550HPLT1G Series FEATURE 3 ƽHigh current capacity in compact package. IC =1.5A. 1 ƽEpitaxial planar type. 2 ƽPNP complement: L8550H ƽWe declare that the material of product compliance with RoHS requirements.

L8550HPLT1G

Abstract: 1Hd SOT23
Contextual Info: LESHAN RADIO COMPANY, LTD. General Purpose Transistors PNP Silicon L8550HPLT1G Series S-L8550HPLT1G Series FEATURE ƽHigh current capacity in compact package. ƽEpitaxial planar type. 3 ƽPNP complement: L8550H ƽWe declare that the material of product compliance with RoHS requirements.

Contextual Info: MIC5211 Dual jiCap 50mA LDO Voltage Regulator Preliminary Information General Description Features The M IC5211 is a dual uCap™ 50mA linear voltage regulator with very low dropout voltage typically 20mV at light loads , very low ground current (225 jaA at 20mA output current), and

sot-23 Marking 1HD

Contextual Info: SS8550LT1 PNP General Purpose Transistors 3 P b Lead Pb -Free 1 2 SOT-23 VCEO Value -25 -40 -5.0 -1500 300 2.4 417 -25 -0.1 -40 -100 -5.0 -100 -40 -5.0 WEITRON http://www.weitron.com.tw 1/2 -0.15 u -0.15 u 27-Jul-2012 SS8550LT1 ELECTRICAL CHARACTERISTICS (TA=25 C unless otherwise noted) (Countinued)

Contextual Info: MIC5211 Dual jiCap 50mA LDO Voltage Regulator Preliminary Information General Description Features The M IC5211 is a dual uCap™ 50mA linear voltage regulator with very low dropout voltage typically 20mV at light loads , very low ground current (225|aA at 20mA output current), and

VJ1210A562JXAMB

Abstract: VJ1210Y Z5U 100V VJ1210U marking aeh
Contextual Info: STYLE VJ1210 Ceram ic Chip Capacitors VISHÄ ¡you* # 0111 NPO/COG, X7R and Z5U B « Capacitance k 8 11 T - “I |-*- 100 pcs. NPO/COG 50V 4700pF 5600pF 6800pF 8200pF .01nF VJ1210A472JXAMX VJ1210A562JXAMX VJ 1210A682JXAMX VJ 1210A822JXAMX VJ1210A103JXAMX VJ 1210A472JXAMB

YTS4125

Abstract: A 1HF
Contextual Info: SILICON PNP EPITAXIAL TYPE YTS4125 U n i t in m n FOR GENERAL PURPOSE USE SWITCHING AND A MPLIFIER + 0.5 Í . 5 - 0.3 APPLICATIONS. + 0.25 ,1 5 -0 1 5 FEATURES: EE • Low Leakage Current : I ^ g Q = - 5 0 n A M a x . IE B O = _ 5 0 n A (Max.) @ Vjng=-20V

VJ0603A331

Abstract: VJ0603A120JXAMX VJ0603A4R7DXAMB VJ0603A151 VJ0603U VJ0603A221 VJ0603A101JXAMX vj0603 VJ0603A470JXAMX VJ0603A391
Contextual Info: STY LE VJ0603 Ceram ic Chip Capacitors NPO/COG % el Capacitance rymuw^i Bag lo o pcs. Mwwl H NPO/COG 50V 1.0pF VJ0603A1RODXAMX 1.2pF VJ0603A1R2DXAMX 1.5pF VJ0603A1R5DXAMX 1.8pF VJ0603A1R8DXAMX 2.2pF VJ0603A2R2DXAMX 2.7pF VJ0603A2R7DXAMX 3.3pF VJ0603A3R3DXAMX

VJ0805A271

Abstract: VJ0805A391JXAMX VJ0805U VJ0805A181 VJ0805A220JXA VJ0805A220JXAMB VJ0805A6R8DXA 220pf npo VJ0805U103 VJ0805A100JXAMX
Contextual Info: STYLE VJ0805 Ceram ic Chip Capacitors V1SHAY NPO/COG ¡ f ir n * * * '} HJjldMAJI.UI Reel Capacitance 4 *~ * 500 pcs~ T —*-] |— NPO/COG 50 V 1.0pF 1.2pF 1.5pF 1.8pF 2.2pF 2.7pF 3.3pF 3.9pF 4.7pF 5.6pF 6.8pF 8.2pF 10pF 12pF 15pF 18pF 22pF 27pF 33pF 39pF

Contextual Info: ¡ e lu o m TC1054 TC1055 TC1186 Semiconductor, Inc. 50mA, 100 mA, and 150 mA CMOS LDOs WITH SHUTDOWN AND ERROR OUTPUT FEATURES GENERAL DESCRIPTION • ■ ■ The TC1054, TC1055, and TC 1186 are high accuracy typically ±0.5% CMOS upgrades for older (bipolar) low

smd diode s8

Abstract: DIODE SMD MARKING CODE S8 DIODE SMD MARKING CODE SF SMD S6 oc Diode smd s6 94 smd code 1HF Recovery Glass Passivated sod-123 marking CS SOD-123 smd diode s6 smd SMA diode marking s2
Contextual Info: COMCHIP SMD Super Fast Recovery Rectifiers SMD Diodes Specialist CSFM101-HF Thru. CSFM105-HF Reverse Voltage: 50 to 600 Volts Forward Current: 1.0 Amp RoHS Device Halogen Free Features Mini SMA / SOD-123 -Batch process design,excellent power dissipation offers better reverse leakage current and thermal

EIA-481-D peel

Contextual Info: MODEL TSM43 Cermet Trimmers VISHAY Surface Mount, 4.0mm Square Design, Multi Turn, Sealed, Industrial Grade FEATURES • Sealed to withstand board wash processing. • Pick and place centering design. • 4.0mm design meets EIA SMD standard trimmer footprint.

ultra fast recovery time diode 10ns

Contextual Info: Low Profile SMD Ultra Fast Recovery Rectifiers CURMT103-HF Thru. CURMT107-HF Reverse Voltage: 200 to 1000 Volts Forward Current: 1.0 Amp RoHS Device Halogen Free SOD-123H Features 0.146 3.7 0.130(3.3) 0.018(0.45) 0.006(0.15) -Excellent power dissipation offers better reverse

sem 5025

Contextual Info: Semiconductor, Inc. TC 1223 TC 1224 50 mA AND 100 mA CMOS LDOs WITH SHUTDOWN FEATURES GENERAL DESCRIPTION • ■ ■ The TC1223 and TC1224 are high accuracy typically ±0.5% CMOS upgrade for older (bipolar) low dropout regulators such as the LP2980. Designed specifically for

TC1014

Abstract: LP2980 MIC5205 TC1107 TC1108 TC1173 TC1185 TC1186 TC1187 marking caa
Contextual Info: ¡ e l u o m Semiconductor, Inc. TC1014 50m A CMOS LDO W ITH SHUTDOW N AND REFERENCE BYPASS FEATURES G EN ER AL DESCRIPTION • ■ ■ ■ ■ ■ ■ The TC1 014 is a high accuracy typically ±0.5% CMOS upgrade for older (bipolar) low dropout regulators such as

Contextual Info: lit m TECHNOLOGY LT1309 500kHz M icropower DC/DC Converter for Flash Memory FCflTUIKS DCSCRIPTIOn • 60mA Output Current at 12V from 3V or 5V Supply ■ Shutdown to 9 _iA ■ VPP VALID Comparator ■ Up to 85% Efficiency ■ Switching Frequency: 500kHz (Typical

LA50 marking transistor

Contextual Info: M IC 5203 80mA Low-Dropout Voltage Regulator G eneral Description Features The MIC5203 is a family ol efficient linear voltage regulators with very low dropout voltage typically 20mV at light loads and 300mV at 80mA and very low ground current (225jiA at