1M KO Search Results
1M KO Price and Stock
Samsung Electro-Mechanics CL21M106KOBVPNEMultilayer Ceramic Capacitors MLCC - SMD/SMT 0805, 10uF, +/-10% |
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CL21M106KOBVPNE | 16,887 |
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Vishay Intertechnologies WKO471MCPCF0KRSafety Capacitors 470pF 440volts 20% |
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WKO471MCPCF0KR | 15,657 |
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Vishay Intertechnologies WKO101MCPCF0KRSafety Capacitors 100pF 20% |
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WKO101MCPCF0KR | 11,857 |
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TE Connectivity MCP2.8 BU-KONTAKTTerminals |
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MCP2.8 BU-KONTAKT | 11,783 |
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Vishay Intertechnologies WKO221MCPCF0KRSafety Capacitors 220 pF |
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WKO221MCPCF0KR | 11,693 |
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1M KO Datasheets Context Search
Catalog Datasheet | Type | Document Tags | |
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AL569
Abstract: al565
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AL560 AL561 AL565 AL569 AL580 AL570 AL573 AL569 al565 | |
MARKING 9.1M
Abstract: RCR50EN
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RCR50 RCR50EN RCR60 UL1676 CSA-C22 1-M94) EN60065 RCR50EN MARKING 9.1M | |
Contextual Info: resistors RCR anti-surge power type leaded resistor EU features • Excellent anti-surge characteristics • Stable characteristics of moisture resistance up to high resistance range. • RCR50 + 1MΩ - 12MΩ , RCR50EN (1MΩ - 12MΩ) and RCR60 (1MΩ - 12MΩ) are discharge resistors recognized |
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RCR50 RCR50EN RCR60 UL1676 CSA-C22 1-M94) EN60065 RCR50EN | |
Contextual Info: resistors RCR anti-surge power type leaded resistor EU features • Excellent anti-surge characteristics • Stable characteristics of moisture resistance up to high resistance range. • RCR50 + 1MΩ - 12MΩ , RCR50EN (1MΩ - 12MΩ) and RCR60 (1MΩ - 12MΩ) are discharge resistors recognized |
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RCR50 RCR50EN RCR60 UL1676 CSA-C22 1-M94) EN60065 RCR50EN | |
RCR16Contextual Info: resistors RCR anti-surge power type leaded resistor EU features • Excellent anti-surge characteristics • Stable characteristics of moisture resistance up to high resistance range. • RCR50 + 1MΩ - 12MΩ , RCR50EN (1MΩ - 12MΩ) and RCR60 (1MΩ - 12MΩ) are discharge resistors recognized |
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RCR50 RCR50EN RCR60 UL1676 CSA-C22 1-M94) EN60065 RCR50EN RCR16 | |
Contextual Info: resistors RCR anti-surge power type leaded resistor EU features • Excellent anti-surge characteristics • Stable characteristics of moisture resistance up to high resistance range • RCR50 + 1MΩ - 12MΩ , RCR50EN (1MΩ - 12MΩ) and RCR60 (1MΩ - 12MΩ) are discharge resistors recognized |
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RCR50 RCR50EN RCR60 UL1676 CSA-C22 1-M94) RCR25EN EN60065 | |
EN60065
Abstract: RcR RESISTORS RCR50 CSA-C22 RCR60 RCR50EN RCR100 rcr resistor
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RCR50 RCR50EN RCR60 UL1676 CSA-C22 1-M94) EN60065 RCR50EN RcR RESISTORS RCR50 RCR60 RCR100 rcr resistor | |
Contextual Info: resistors RCR anti-surge power type leaded resistor EU features • Excellent anti-surge characteristics • Stable characteristics of moisture resistance up to high resistance range • RCR50 + 1MΩ - 12MΩ , RCR50EN (1MΩ - 12MΩ) and RCR60 (1MΩ - 12MΩ) are discharge resistors recognized |
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RCR50 RCR50EN RCR60 UL1676 CSA-C22 1-M94) RCR25EN EN60065 | |
ptz decoder
Abstract: ADSST-1803 AD1803 AD1881 AD1881A ADSP-2185 ADV7171 Videophone Development MOSQUITO noise schematic ADSST-21065
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ADSST-VC-201 ADV7171 ADSST-21065L ADSST-2185 ADSST-1803 AD1881A 32-bit ADSST-VC-4200 D-81373 ptz decoder ADSST-1803 AD1803 AD1881 AD1881A ADSP-2185 ADV7171 Videophone Development MOSQUITO noise schematic ADSST-21065 | |
AC 1501
Abstract: CAS20
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V404J32/36 V404J32 V404J36 72-lead V404J36 72-lead AC 1501 CAS20 | |
Contextual Info: MOSEL VITELIC PRELIMINARY V408J32 1M X 32 HIGH PERFORMANCE EDO MEMORY MODULE Features Description • ■ The V408J32 memory Module is organized as 1,097,152 x 32 bits in a 72-lead single-in-line mod ule. The 1M x 32 memory module uses 8 MoselVitelic 1M x 4 DRAMs. The x32 modules are ideal |
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V408J32 72-lead | |
audio Transmitter receiver optic cable
Abstract: PLR101 PLM101-1M PLT101
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PLM101-1M PLM101-1M: PLT101 PLR101 PLM101-1M PLT101) PLR101) PLT101 PLR101 audio Transmitter receiver optic cable | |
Contextual Info: KOA SPEER ELECTRONICS, INC. SS-01 R6 AHA 3/15/13 Fixed Resistors CERTIFIED Type RCR16, RCR25, RCR50 + , RCR50EN, RCR60, RCR75 and RCR100 CERTIFIED 1. Scope of Application RCR50EN (100kΩ - 33MΩ) and RCR60 (470kΩ RCR50 +(1MΩ - 12MΩ), RCR50EN (1MΩ - 12MΩ) |
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SS-01 RCR16, RCR25, RCR50( RCR50EN, RCR60, RCR75 RCR100 RCR50 RCR50EN | |
DISTORTION PEDAL DIAGRAM
Abstract: bass drum sound ic KS0174 TR-808 KS0174-1M circuit diagram of musical electronics bell with roland piano Le grand tango VIOLIN snare drum sound ic echo reverb ic guitar
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KS0174-1M OP-600 KS0164 288x16 KS0174-2M KSQ164 16M-M) MT-32, DISTORTION PEDAL DIAGRAM bass drum sound ic KS0174 TR-808 circuit diagram of musical electronics bell with roland piano Le grand tango VIOLIN snare drum sound ic echo reverb ic guitar | |
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Contextual Info: PRELIMINARY W9864G6EB 1M x 4 BANKS × 16 BITS SDRAM GENERAL DESCRIPTION W9864G6EB is a high-speed synchronous dynamic random access memory SDRAM , organized as 1M words × 4 banks × 16 bits. Using pipelined architecture and 0.13 µm process technology, |
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W9864G6EB 143MHz/CL3. | |
Contextual Info: iiili 8 Megabit 1M x 8-Bit Multi-Purpose Flash _ SST39VF080Q_ Advance Information FEATURES: • Organized as 1M x 8 • Latched Address and Data • Single 2.7-3.6V Read and Write Operations • Fast Sector Erase and Byte Program: |
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SST39VF080Q_ SST39VF080Q | |
MCM69R618ZP4Contextual Info: MOTOROLA SEMICONDUCTOR TECHNICAL DATA 1M Late Write HSTL The MCM69R536 / 618 is a 1M–bit synchronous late write fast static RAM designed to provide high performance in secondary cache, ATM switch, Telecom, and other high speed memory applications. The MCM69R618 |
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MCM69R536/D MCM69R536 MCM69R618 MCM69R536 MCM69R618 MCM69R536/D MCM69R618ZP4 | |
DP8422V-33Contextual Info: DP8420V-33,DP8421V-33,DP8422V-33, DP84T22-25 DP8420V-33 DP8421V-33 DP8422V-33 DP84T22-25 microCMOS Programmable 256k/1M/4M Dynamic RAM Controller/Drivers Literature Number: SNOS603A DP8420V 21V 22V-33 DP84T22-25 microCMOS Programmable 256k 1M 4M Dynamic RAM |
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DP8420V-33 DP8421V-33 DP8422V-33, DP84T22-25 DP8422V-33 DP84T22-25 256k/1M/4M SNOS603A | |
DP8421AV-25Contextual Info: DP8420A,DP8421A,DP8422A DP8420A DP8421A DP8422A microCMOS Programmable 256k/1M/4M Dynamic RAM Controller/Drivers Literature Number: SNOSBX7A DP8420A 21A 22A microCMOS Programmable 256k 1M 4M Dynamic RAM Controller Drivers General Description Features The DP8420A 21A 22A dynamic RAM controllers provide a |
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DP8420A DP8421A DP8422A DP8422A 256k/1M/4M DP8421AV-25 | |
Contextual Info: MOSEL VITELIC PRELIMINARY V4DJX132BLT/V4DJ132BLT 1M X 32 HIGH PERFORMANCE EDO/FPM MEMORY MODULE Features Description • ■ ■ ■ The V4DJX132BLT/V4DJ132BLT memory Module is organized as 1,097,152 x 32 bits in a 72lead single-in-line module. The 1M x 32 memory |
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V4DJX132BLT/V4DJ132BLT 72lead 32-bit V4DJX132BLT V4DJ132BLT 72-lead | |
23C8000
Abstract: 23C8000-10 MX23C8000 MX23C8000MC-10 MX23C8000PC-10 MX23C8000QC-10 MX23C8000TC-10
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MX23C8000 100/120/150/200ns MX23C8000 100/120/150/200ns. impoJUL/03/2003 23C8000 23C8000-10 MX23C8000MC-10 MX23C8000PC-10 MX23C8000QC-10 MX23C8000TC-10 | |
AM20
Abstract: CMP12 SM5901AF CAS-000 MN662
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SM5901AF 384fs NC9607BE AM20 CMP12 SM5901AF CAS-000 MN662 | |
Contextual Info: KMM5321204AW ELECTRONICS DRAM Module KMM5321204AW/AWG EDO Mode 1Mx32 DRAM SIM M , 5V, 1K Refresh using 1M x 16 DRAM GENERAL DESCRIPTION FEATURES The Samsung KMM5321204AW is a 1M bit x 32 Dynamic RAM high density memory module. The Samsung KMM5321204AW consists of two CMOS |
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KMM5321204AW KMM5321204AW/AWG 1Mx32 KMM5321204AW 1Mx16bit 42-pin 72-pin | |
Contextual Info: MOTOROLA Order this document by MCM318165CV/D SEMICONDUCTOR TECHNICAL DATA 1M x 16 Advance Information 16M CMOS Wide DRAM Family EDO, 1M x 16, 1K MCM318165CV EDO 1024 Cycle Refresh The family of 16M Dynamic RAMs is fabricated using 0.40µ CMOS high–speed |
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MCM318165CV/D MCM318165CV MCM318165CV) |