1M X 32 X 4 Search Results
1M X 32 X 4 Price and Stock
Texas Instruments LM4431M3-2.5/NOPBVoltage References MICROPWR SHUNT VLTG REF A 926-LM4431M3X25NOPB |
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LM4431M3-2.5/NOPB | 20,944 |
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Infineon Technologies AG TLE4961-1MBoard Mount Hall Effect / Magnetic Sensors POSITION&CURRENT SENSORS |
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TLE4961-1M | 9,034 |
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MaxLinear Inc MXL83214E-AHA-RRS-422/RS-485 Interface IC High performance, Half-duplex RS-485/422 transceivers with high IEC ESD and EFT protection |
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MXL83214E-AHA-R | 2,776 |
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MaxLinear Inc MXL83214E-ADA-RRS-422/RS-485 Interface IC High performance, Half-duplex RS-485/422 transceivers with high IEC ESD and EFT protection |
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MXL83214E-ADA-R | 2,164 |
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MaxLinear Inc MXL83214E-ARA-RRS-422/RS-485 Interface IC High performance, Half-duplex RS-485/422 transceivers with high IEC ESD and EFT protection |
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MXL83214E-ARA-R | 2,055 |
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1M X 32 X 4 Datasheets Context Search
Catalog Datasheet | Type | Document Tags | |
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DH311Contextual Info: M OSEL v m u c PRELIMINARY V404J32 and V404J36 1M x 32 and 1M x 36 CMOS MEMORY MODULES Features Description u • ■ ■ ■ ■ The V404J32 memory Module is organized as 1,048,576 x 32 bits in a 72-lead single-in-line mod ule. The 1M x 32 memory module uses 8 MoselVitelic 1M x 4 DRAMs. The V404J36 Memory Mod |
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V404J32 V404J36 72-lead V404J32/36 DH311 | |
Contextual Info: MOSEL VITELIC PRELIMINARY V408J32 1M X 32 HIGH PERFORMANCE EDO MEMORY MODULE Features Description • ■ The V408J32 memory Module is organized as 1,097,152 x 32 bits in a 72-lead single-in-line mod ule. The 1M x 32 memory module uses 8 MoselVitelic 1M x 4 DRAMs. The x32 modules are ideal |
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V408J32 72-lead | |
Contextual Info: MOSEL VITELIC PRELIMINARY V408J32 1M x 32 HIGH PERFORMANCE EDO MEMORY MODULE Features Description • ■ The V 408J32 memory Module is organized as 1,097,152 x 32 bits in a 72-lead single-in-line mod ule. The 1M x 32 memory module uses 8 MoselVitelic 1M x 4 DRAMs. The x32 modules are ideal |
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V408J32 72-lead 408J32 b353311 V408J32 | |
VG2618160
Abstract: HA2010
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13218160B 23218160B 13218160B VM23218160B 32-bit VG2618160B) VM13218160B VG2618160 HA2010 | |
Contextual Info: 1M x 32 CMOS STATIC RAM MODULE PRELIMINARY IDT7MP4104 Integrated Device Technology, Inc. FEATURES: DESCRIPTION: • High density 4 megabyte static RAM module The IDT7MP4104 is a 1M x 32 static RAM module con structed on an epoxy laminate FR-4 substrate using 8 1M x |
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IDT7MP4104 IDT7MP4104 200mV | |
AC 1501
Abstract: CAS20
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V404J32/36 V404J32 V404J36 72-lead V404J36 72-lead AC 1501 CAS20 | |
Contextual Info: MOSEL-VITELIC V404J32and V404J36 1M x32and 1M x36 CMOS MEMORY MODULES PRELIMINARY Features Description • ■ ■ ■ ■ ■ The V404J32 memory Module is organized as 1,048,576 x 32 bits in a 72-lead single-in-line mod ule. The 1M x 32 memory module uses 8 MoselVitelic 1M x 4 DRAMs. The V404J36 Memory Mod |
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V404J32and V404J36 x32and 72-lead V404J32 77777F77\i V404J32/36 | |
i3 processor
Abstract: A43L2632
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A43L2632 i3 processor A43L2632 | |
512k x 8 chip block diagram
Abstract: WED9LAPC2B16P8BC WED9LAPC3C16V8BC
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WED9LAPC3C16V8BC LUCTAPC640 WED9LAPC3C16V8BC WED9LAPC2B16P8BC, 5M-1994. WED9LAPC3C16V8BI 512k x 8 chip block diagram WED9LAPC2B16P8BC | |
TAE 1102Contextual Info: PRELIMINARY IDT7MP4104 1M x 32 CMOS STATIC RAM MODULE Integrated D evice T ech nology, Inc. FEATURES: DESCRIPTION: • High density 4 megabyte static RAM module The ID T7M P 4104 is a 1M x 32 static RAM module con structed on an epoxy laminate FR -4 substrate using 8 1M x |
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IDT7MP4104 I/010 I/011 I/016 I/017pplied. TAE 1102 | |
Contextual Info: MOSEL VITELIC PRELIMINARY V4DJX132BLT/V4DJ132BLT 1M X 32 HIGH PERFORMANCE EDO/FPM MEMORY MODULE Features Description • ■ ■ ■ The V4DJX132BLT/V4DJ132BLT memory Module is organized as 1,097,152 x 32 bits in a 72lead single-in-line module. The 1M x 32 memory |
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V4DJX132BLT/V4DJ132BLT 72lead 32-bit V4DJX132BLT V4DJ132BLT 72-lead | |
DD660Contextual Info: M OSEL VITEU C PRELIMINARY V1816J32 1M x 32 EDO MEMORY MODULE Features Description • ■ ■ ■ ■ ■ The V1816J32 memory module is organized as 1,097,152 x 32 bits in a 72-lead single-in-line module. The 2M x 32 memory module uses 4 Mosel-Vitelic 1M x 16 DRAMs. The x32 modules |
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V1816J32 72-lead cycles/16ms b3S33 DD660 | |
jeida dram 88 pinContextual Info: STI321000C1 88-PIN CARDS 1M X 32 DRAM Card FEATURES GENERAL DESCRIPTION • The Simple Technology STI321000C1 is a 1M bit x 32 Dynamic RAM high density memory card. The Simple Technology STI321000C1 consist of eight CMOS 1M x 4 bit DRAMs in 20pin SOJ package. The circuit board is enclosed in a credit-card |
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STI321000C1 88-PIN 110ns 130ns 150ns 20pin STI321000C1-60 jeida dram 88 pin | |
WED9LAPC2B16P8BC
Abstract: WED9LAPC2C16V8BC
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WED9LAPC2C16V8BC LUCTAPC640 WED9LAPC2C16V8BC WED9LAPC2B16P8BC, 5M-1994. WED9LAPC2C16V8BI WED9LAPC2B16P8BC | |
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Contextual Info: GS832118/32/36E-xxxV 2M x 18, 1M x 32, 1M x 36 36Mb Sync Burst SRAMs Commercial Temp Industrial Temp Features Functional Description ct SCD Pipelined Reads The GS832118/32/36E-xxxV is a SCD Single Cycle Deselect pipelined synchronous SRAM. DCD (Dual Cycle Deselect) |
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GS832118/32/36E-xxxV GS832118/32/36E-xxxV 8321Vxx 8321V18 8321xx | |
Contextual Info: UG31E321 4 6GSG 4M Bytes (1M x 32) DRAM 72Pin SODIMM based on 1M X 16 Features General Description The UG31E321(4)6GSG is a 1,048,576 bits by 32 SODIMM module.The UG31E321(4)6GSG is assembled using 2 pcs of 1M x 16 1K/4K refresh DRAMs in 42-pin SOJ package mounted on a 72 pin |
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UG31E321 72Pin 42-pin Re-Tek-295 | |
Contextual Info: UG31C321 4 6GSG 4M Bytes (1M x 32) DRAM 72Pin SODIMM based on 1M X 16 Features General Description The UG31C321(4)6GSG is a 1,048,576 bits by 32 SODIMM module.The UG31C321(4)6GSG is assembled using 2 pcs of 1M x 16 1K/4K refresh DRAMs in 42-pin SOJ package mounted on a 72 pin |
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UG31C321 72Pin 42-pin 72pin) 1000mil) Re-Tek-360 | |
UG31W3216GSGContextual Info: UG31W321 4 6GSG 4M Bytes (1M x 32) DRAM 72Pin SODIMM based on 1M X 16 Features General Description The UG31W321(4)6GSG is a 1,048,576 bits by 32 SODIMM module.The UG31W321(4)6GSG is assembled using 2 pcs of 1M x 16 1K/4K refresh DRAMs in 42-pin SOJ package mounted on a 72 pin |
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UG31W321 72Pin 42-pin 72pin) 1000mil) Re-Tek-040 UG31W3216GSG | |
4093 DATASHEET
Abstract: 4093 pin configuration
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V408J32 72-lead V408J32 4093 DATASHEET 4093 pin configuration | |
dj132Contextual Info: M O SE L V IT E L IC V4DJX132BLT/V4DJ132BLT 1M X 32 HIGH PERFORMANCE EDO/FPM MEMORY MODULE PRELIMINARY Features Description • ■ ■ ■ The V4DJX132BLT/V4DJ132BLT memory Module is organized as 1,097,152 x 32 bits in a 72lead single-in-line module. The 1M x 32 memory |
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V4DJX132BLT/V4DJ132BLT 32-bit V4DJX132BLT V4DJ132BLT 72-lead 72lead dj132 | |
80 pin simm flash
Abstract: 28F008SA E28F008S3 E28F008S3-120
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SL29041-12 80-Pin 40-pin 120ns A0-A19 80 pin simm flash 28F008SA E28F008S3 E28F008S3-120 | |
Contextual Info: MX2308000 8M-BIT [1M x 8] CMOS MASK ROM FEATURES • 1M x 8 organization • • • • Operating current :40mA Standby current: 10OuA Package - 32 pin plastic DIP - 32 pin plastic SOP - 32 pin plastic PLCC - 32 pin plastic TSOP Single +5V power supply Fast access time : 100/120/150/200ns |
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MX2308000 10OuA 100/120/150/200ns MX23C8000 100/120/150/200ns. PM0137 MX23C8000 SEP/25/1997 JAN/29/1999 | |
Contextual Info: MOSEL V I T E L I C V4DJX132BLT/V4DJ132BLT 1M X 32 HIGH PERFORMANCE EDO/FPM MEMORY MODULE PRELIMINARY Features Description • ■ ■ ■ The V4DJX132BLT/V4DJ132BLT memory Module is organized as 1,097,152 x 32 bits in a 72lead single-in-line module. The 1M x 32 memory |
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V4DJX132BLT/V4DJ132BLT 32-bit V4DJX132BLT V4DJ132BLT 72-lead 72lead | |
Contextual Info: M O SE L V IT E L IC V4DJX132BLT/V4DJ132BLT 1M X 32 HIGH PERFORMANCE EDO/FPM MEMORY MODULE PRELIMINARY Features Description • ■ ■ ■ The V4DJX132BLT/V4DJ132BLT memory Module is organized as 1,097,152 x 32 bits in a 72lead single-in-line module. The 1M x 32 memory |
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V4DJX132BLT/V4DJ132BLT 32-bit V4DJX132BLT V4DJ132BLT 72-lead 72lead |