1M11Z Search Results

Contextual Info: 1M11Z3 Diodes General-Purpose Reference/Regulator Diode Military/High-RelN V Z Nom.(V) Reference Voltage11 @I(Z) (A) (Test Condition)23m Tolerance (%)3ì P(D) Max. (W)1.0 Z(z) Max. (ê) Dyn. Imped.8.0 Temp Coef pp/10k Maximum Operating Temp (øC)175õ Package StyleDO-13

Contextual Info: TOSHIBA O I S C R E T E / O P T O J •n 9097250 TOSHIBA DISCRETE/OPTO ¿ p o s ilih DE i T O T T S S D ODlbbtS 99D 1666 5 DT-3^-]3 TOSHIBA FIELD EFFECT TRANSISTOR SEMICONDUCTOR 2 S K 3 8 7 SILICON N CHANNEL MOS TYPE (7T-MOS ) TECHNICAL DATA INDUSTRIAL APPLICATIONS

Contextual Info: 45E D • T0T72SG 0017ÔS1 T ■ T0S4 TOSHIBA INSULATED GATE BIPOLAR TRANSISTOR GT20D201 SILICON P CHANNEL TYPE TOSHIBA DISCRETE/OPTO HIGH POWER AMPLIFIER APPLICATION Unit in mm . High Breakdown Voltage 0 3 .3 ± 0.2 20 5 MAX : VcES=-250V (MIN.) . High Forward Transfer Admittance : | Yfe I =10S (TYP.)

S3275

Contextual Info: S3275 SILICON EPITAXIAL SCHOTTKY BARRIER TYPE Unit in mn VHF-UHF MIXER APPLICATION + 03 4 .5 -0 .2 3.1 ± 0 . 2 . Small Package . Small Delta Forward Voltage -E 3- : AVp-20mV a 8 a M fO . Snail Delta Total Capacitance ÖÖ + I : A C x = 0.15pF 7 a XDl MAXIMUM RATINGS

MOTOROLA POWER TRANSISTOR

Abstract: TO36 package 2N554 Motorola germanium transistor pnp 2N174 2N1545 motorola mesa transistors 1N2621A 2N398A 2N1358 JAN
Contextual Info: m a r c h RESTRICTED WPS Document Ccx OtC _ "* "1 A R EP O R T ON MOTOROLA SE M IC O N D U C T O R R E L IA B IL IT Y D u rin g the past y ear great strides have been m a d e in M o to ro la 's Q uality A ssu ran ce P ro g ram to provide assurance o f reliability . . . as well as a reliable product.

2SC4608

Abstract: IC 720
Contextual Info: 2SC4608 SILICON NPN TRIPLE DIFFUSED MESA TYPE TV HORIZONTAL DEFLECTION OUTPUT APPLICATIONS. HORIZONTAL DEFLECTION OUTPUT FOR HIGH RESOLUTION DISPLAY. Unit in mm HIGH SPEED SWITCHING APPLICATIONS. . High Voltage •»' . Fast Switching Speed. Resistive Load tf=0.15ys(Typ.)