1N 2002 diode
Abstract: 1N4448 LL4448
Text: 1N4448 SILICON EPITAXIAL PLANAR DIODE Fast switching diode This diode is also available in MiniMELF case with the type designation LL4448. Absolute Maximum Ratings Ta = 25oC Symbol Value Unit Reverse Voltage VR 75 V Peak Reverse Voltage VRM 100 V IO 150
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1N4448
LL4448.
1N 2002 diode
1N4448
LL4448
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1N 2002 diode
Abstract: diode datasheet 4448 1N4448 LL4448
Text: 1N4448 SILICON EPITAXIAL PLANAR DIODE Fast switching diode This diode is also available in MiniMELF case with the type designation LL4448. Absolute Maximum Ratings Ta = 25oC Symbol Value Unit Reverse Voltage VR 75 V Peak Reverse Voltage VRM 100 V IO 150
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1N4448
LL4448.
1N 2002 diode
diode datasheet 4448
1N4448
LL4448
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an7840
Abstract: AN-7840 7835 AN4111 AN7734 AN5510 1N4148TA AN-7850 AN4102 PSpice 1N4148
Text: 1N/FDLL 914/A/B / 916/A/B / 4148 / 4448 1N/FDLL 914/A/B / 916/A/B / 4148 / 4448 Small Signal Diode Absolute Maximum Ratings* Symbol TA = 25°C unless otherwise noted Parameter Value Units VRRM Maximum Repetitive Reverse Voltage 100 V IF AV Average Rectified Forward Current
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914/A/B
916/A/B
factAN-7840:
AN-7835/40/50/55/60/61/63
AN-7850:
AN-7855:
an7840
AN-7840
7835
AN4111
AN7734
AN5510
1N4148TA
AN-7850
AN4102
PSpice 1N4148
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AN4104
Abstract: Fairchild 1N4148 1N4148TA PSpice 1N4148 4148 t AN-42025 AN4111 ml2035 CIRCUIT diode do35 C 4148 1N4148 diode
Text: 1N/FDLL 914/A/B / 916/A/B / 4148 / 4448 1N/FDLL 914/A/B / 916/A/B / 4148 / 4448 Small Signal Diode Absolute Maximum Ratings* Symbol TA = 25°C unless otherwise noted Parameter Value Units VRRM Maximum Repetitive Reverse Voltage 100 V IF AV Average Rectified Forward Current
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914/A/B
916/A/B
ML2035
AN-42026:
AN-42026
ML4818
AN-42034:
AN-42034
AN4104
Fairchild 1N4148
1N4148TA
PSpice 1N4148
4148 t
AN-42025
AN4111
ml2035 CIRCUIT
diode do35 C 4148
1N4148 diode
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1N 2002 diode
Abstract: 1N4148M
Text: 1N4148M SILICON EPITAXIAL PLANAR DIODE Fast switching diode Absolute Maximum Ratings Ta = 25oC Symbol Value Unit Reverse Voltage VR 50 V Peak Reverse Voltage VRM 60 V IO 130 IFSM 500 Rectified Current (Average) Half Wave Rectification with Resist. Load o
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1N4148M
4148M
1N 2002 diode
1N4148M
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1N4148M
Abstract: 1n-4148m 1N 2002 diode
Text: 1N4148M SILICON EPITAXIAL PLANAR DIODE Fast switching diode Absolute Maximum Ratings Ta = 25oC Symbol Value Unit Reverse Voltage VR 50 V Peak Reverse Voltage VRM 60 V IO 130 IFSM 500 Rectified Current (Average) Half Wave Rectification with Resist. Load 1)
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1N4148M
4148M
1N4148M
1n-4148m
1N 2002 diode
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RD2.0FM
Abstract: C11531E RD10FM RD11FM RD120FM RD12FM RD13FM RD15FM RD16FM RD18FM
Text: DATA SHEET ZENER DIODES RD2.0FM to RD120FM ZENER DIODES 1 W 2 PIN POWER MINI MOLD PACKAGE DIMENSIONS DESCRIPTION Unit: mm Type RD2.0FM to RD120FM series are 2 pin power mini mold package zener diodes possessing an 4.7 ±0.3 allowable power dissipation of 1 W.
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RD120FM
RD120FM
C11531E)
RD2.0FM
C11531E
RD10FM
RD11FM
RD12FM
RD13FM
RD15FM
RD16FM
RD18FM
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diode f 4148
Abstract: diode t 4148 T 4148 t 4148 diode 4148 t 4148 4448 diode 4448 diode do35 C 4148 diode IN 4148
Text: 1N/FDLL 914/A/B / 916/A/B / 4148 / 4448 1N/FDLL 914/A/B / 916/A/B / 4148 / 4448 Small Signal Diode Absolute Maximum Ratings* Symbol TA = 25°C unless otherwise noted Parameter Value Units VRRM Maximum Repetitive Reverse Voltage 100 V IF AV Average Rectified Forward Current
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914/A/B
916/A/B
DO-35
OT-23
diode f 4148
diode t 4148
T 4148
t 4148 diode
4148 t
4148
4448
diode 4448
diode do35 C 4148
diode IN 4148
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68w Transistor smd
Abstract: bbc 127 324 DIODE TRANSISTOR SMD 13W smd transistor yb lamp indicator 115vac 400hz 18w smd transistor RD 6BL relay 12v 1c/o kd smd transistor SGR642H
Text: Willow Technologies Relay Selector 2002 Signal / Telecommunications Electromechanical HG4100 HG4516 HG4507 HG4078B SGR46G 1C/O 2C/O 1C/O 1C/O Switching Current 1A 2A 2A 5A Switching Voltage 125VAC / 60VDC 125VAC / 150VDC Breaking Capacity 62.5VA / 30W 50VA / 30W
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HG4100
HG4516
HG4507
HG4078B
SGR46G
125VAC
60VDC
150VDC
24VDC
68w Transistor smd
bbc 127 324 DIODE
TRANSISTOR SMD 13W
smd transistor yb
lamp indicator 115vac 400hz
18w smd transistor
RD 6BL
relay 12v 1c/o
kd smd transistor
SGR642H
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ca 1310
Abstract: VCSEL Laser-Diode 1550 nm DI0A-7030 1310nm DFB chip
Text: 48400 Fremont Blvd. Fremont, CA 94538 Tel: 510 445-3068 x244 Fax: (510) 445-3060 1310/1550 nm Power-Monitor PIN Part Number: DI0A-7030 Applications: Optical power monitoring of laser diodes (VCSEL, FP or DFB) Absolute Maximum Ratings (T = 25°C): Parameter
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DI0A-7030
1310nm
ca 1310
VCSEL Laser-Diode 1550 nm
DI0A-7030
1310nm DFB chip
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zener diode cross reference
Abstract: Zener Diode marking 3a zener diode cross reference 3.9 12v zener diode JEDEC 1N zener 8.2V 0.5W 12V 6A Zener Diode Analog devices TOP marking Information HOW TO FIND ZENER CURRENT A 80 zener diode 8.2V DIODE 1N750A
Text: Absolute Maximum Ratings* Symbol Tolerance: A = 5% TA = 25°C unless otherwise noted Parameter Value Units 500 mW -65 to +200 °C PD Power Dissipation TSTG Storage Temperature Range TJ Operating Junction Temperature + 175 °C Lead Temperature 1/16” from case for 10
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1N746A
1N759A)
1N759A
DO-35
1N749ATR
DO-35
1N749A
zener diode cross reference
Zener Diode marking 3a
zener diode cross reference 3.9
12v zener diode JEDEC 1N
zener 8.2V 0.5W
12V 6A Zener Diode
Analog devices TOP marking Information
HOW TO FIND ZENER CURRENT
A 80 zener diode 8.2V
DIODE 1N750A
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diode 4148
Abstract: diode t 4148 1N916B 1n914a t 4148 diode 4148 diode datasheet 4148
Text: 1N/FDLL 914/A/B / 916/A/B / 4148 / 4448 1N/FDLL 914/A/B / 916/A/B / 4148 / 4448 Small Signal Diode Absolute Maximum Ratings* Symbol TA = 25°C unless otherwise noted Parameter Value Units VRRM Maximum Repetitive Reverse Voltage 100 V IF AV Average Rectified Forward Current
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914/A/B
916/A/B
200opment.
diode 4148
diode t 4148
1N916B
1n914a
t 4148 diode
4148 diode datasheet
4148
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B2 Zener
Abstract: B1 6 zener zener diode numbering system RD18SB rd 62 nec zener RD110s RD5.1S RD5.1S(B)-T1-A/1431T data sheet zener diode mv 5 MARK b3 zener diode
Text: DATA SHEET ZENER DIODES RD2.0S to RD120S ZENER DIODES 200 mW 2 PIN SUPER MINI MOLD PACKAGE DIMENSIONS DESCRIPTION in millimeter Type RD2.0S to RD120S series are 2 pin super mini power dissipation of 200 mW. 0.3±0.05 1.25±0.1 mold package zener diodes possessing an allowable
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RD120S
RD120S
B2 Zener
B1 6 zener
zener diode numbering system
RD18SB
rd 62 nec zener
RD110s
RD5.1S
RD5.1S(B)-T1-A/1431T
data sheet zener diode mv 5
MARK b3 zener diode
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1N457
Abstract: 1N SERIES DIODE
Text: 1N457/A 1N457/A DO-35 Color Band Denotes Cathode Small Signal Diode Absolute Maximum Ratings* Symbol TA = 25°C unless otherwise noted Value Units VRRM Maximum Repetitive Reverse Voltage Parameter 70 V IF AV Average Rectified Forward Current 200 mA IFSM Tstg
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1N457/A
DO-35
1N457ATR
DO-35
1N457A
1N457
1N SERIES DIODE
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1n35
Abstract: Fairchild 1N3595
Text: 1N3595 1N3595 DO-35 Color Band Denotes Cathode Small Signal Diode Absolute Maximum Ratings* Symbol TA = 25°C unless otherwise noted Value Units Maximum Repetitive Reverse Voltage 150 V IF AV Average Rectified Forward Current 200 mA IFSM Tstg Non-repetitive Peak Forward Surge Current
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1N3595
DO-35
1N3595TR
1n35
Fairchild 1N3595
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BF265
Abstract: 29v33
Text: MAX3880 I/O Model SPICE I/O Macromodels aid in understanding signal integrity issues in electronic systems. Most of Maxim’s High Frequency/Fiber Communication ICs utilize input and output I/O circuits with Current Mode Logic (CML), Positive Emitter Coupled Logic
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MAX3880
HDE113032
181E-017
HDE113032
BF265
29v33
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1N3595
Abstract: Fairchild 1N3595
Text: 1N3595 1N3595 DO-35 Color Band Denotes Cathode Small Signal Diode Absolute Maximum Ratings* Symbol TA = 25°C unless otherwise noted Value Units Maximum Repetitive Reverse Voltage 150 V IF AV Average Rectified Forward Current 200 mA IFSM Tstg Non-repetitive Peak Forward Surge Current
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1N3595
DO-35
1N3595TR
DO-35
1N3595
Fairchild 1N3595
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RD12FM
Abstract: RD13FM RD15FM RD16FM RD18FM RD20FM RD10FM RD11FM RD120FM RD6.2
Text: DATA SHEET ZENER DIODES RD2.0FM to RD120FM ZENER DIODES 1 W PLANAR TYPE 2 PIN POWER MINI MOLD PACKAGE DIMENSION Unit: mm DESCRIPTION These products are zener diodes with an allowable power dissipation of 1 W and a planar type 2 pin power mini mold 4.7 ±0.3
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RD120FM
RD12FM
RD13FM
RD15FM
RD16FM
RD18FM
RD20FM
RD10FM
RD11FM
RD120FM
RD6.2
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fairchild 1n4150
Abstract: FAIRCHILD DIODE ultra fast diode 1N4150
Text: 1N4150 / FDLL4150 COLOR BAND MARKING 1ST BAND 2ND BAND DEVICE FDLL4150 BLACK ORANGE LL-34 DO-35 THE PLACEMENT OF THE EXPANSION GAP HAS NO RELATIONSHIP TO THE LOCATION OF THE CATHODE TERMINAL High Conductance Ultra Fast Diode Sourced from Process 1R. See MMBD1201-1205 for characteristics.
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1N4150
FDLL4150
FDLL4150
LL-34
DO-35
MMBD1201-1205
DO-35-2
fairchild 1n4150
FAIRCHILD DIODE
ultra fast diode
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Untitled
Abstract: No abstract text available
Text: Zowie Technology Corporation Schottky Barrier Diode Lead free product 3 RB706F-40G ANODE 2 3 CATHODE 1 2 1 ANODE SOT-323 MAXIMUM RATINGS Symbol Value Unit Maximum Recurrent Peak Reverse Voltage VRRM 45 Volts Maximum RMS Voltage VRMS 32 Volts VDC 40 Volts Io
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RB706F-40G
OT-323
1000m
-25oC
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Untitled
Abstract: No abstract text available
Text: MCL-SS400 SILICON EPITAXIAL PLANAR DIODES High-speed Switching Applications LS-31 Features • Fits onto SOD 323 / SOT 23 footprints • Micro Melf package • Extremely small surface mounting type. EMD2 • High Speed (trr = 1.2ns Typ.) • High reliability.
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MCL-SS400
LS-31
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RB706F-40G
Abstract: No abstract text available
Text: Zowie Technology Corporation Schottky Barrier Diode Lead free product 3 2 RB706F-40G 3 1 1 2 SOT-323 MAXIMUM RATINGS Symbol Value Unit Maximum Recurrent Peak Reverse Voltage VRRM 45 Volts Maximum RMS Voltage VRMS 32 Volts VDC 40 Volts Io 0.03 Amps IFSM 0.2
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RB706F-40G
OT-323
1000m
-25oC
RB706F-40G
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SS400
Abstract: TA12100 TA12-100
Text: MCL-SS400 SILICON EPITAXIAL PLANAR DIODES High-speed Switching Applications LS-31 Features • Fits onto SOD 323 / SOT 23 footprints • Micro Melf package • Extremely small surface mounting type. EMD2 • High Speed (trr = 1.2ns Typ.) • High reliability.
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MCL-SS400
LS-31
SS400
TA12100
TA12-100
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HA1930
Abstract: No abstract text available
Text: O ^ G S D elect; HERMETICALLY SEALED G L A SS PACKAGED TUNING DIODES HYPERABRUPT Wr ABRUPT E L E C T R IC A L CH A R A CTER ISTICS T a = 25° C unless otherwise noted GENERAL APPLICATIONS Oiode Cap. IC T)* pf Q4 $ 50 MHz RATIO C2/C20 min/typ NO LOW INDUCTANCE
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OCR Scan
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C2/C20
C2/C30
C4/C25
SQ1213A
SQ1714
SQ1215A
G702A
C20/pf
HA1930
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