1N118 Search Results

IN1183

Abstract: IOR 5250 IN1190 1N1183 1N1183A 1N2128A 1N3765 PD-2087 N1190 1N1133
Contextual Info: Data Sheet No. PD-2.087 INTERNATIONAL RECTIFIER llORl 1N11S3, 1N3765, 1N1183A, 1N2128A SERIES 3 5 , 4 0 and 6 0 A m p P o w e r Silicon R e c tifie r D iodes Description and Features Major Ratings and Characteristics ' f îA V i 1N 1183 1N3765 1N 1183A 35*

Contextual Info: 1N1183, 1N3765, 1N1183A, 1N2128A Series www.vishay.com Vishay Semiconductors Power Silicon Rectifier Diodes, 35 A, 40 A, 60 A DESCRIPTION/FEATURES • Low leakage current series • Good surge current capability up to 1000 A • Can be supplied to meet stringent military,

A41E

Abstract: A40e A139 A40A A41B A40D GE A40B A40F A40B GE A41B
Contextual Info: RECTIFIERS 20 TO 25 AMPERES 1N 248& JEO EC 50B 1N 1195 A9 8A 1N215460 - GE T Y P E 1 N 1183-90 1N3765-68 1N5332 1N452930 - 1N1183A90A 1N38993903 1N390913 1N320814 - - - A40F A44F A 139 S P E C IF IC A T IO N S * F M A V Max. average forward current (1 phase oper­

MR3492

Abstract: MR3495 MR3493 1N1164 MR2502 MR2504 MR2510 MR3491 MR2500 MR2501
Contextual Info: STANDARD RECOVERY RECTIFIERS continued lo, AVERAGE FORWARD RECTIFIED CURRENT (A) 25 *0 CASE 35 193-03 Plastic Note 2 43-05 257-01 / V rrm 50 MR2500 MR3491 1N1183 100 MR2501 MR3492 1N1164 200 MR2502 MR3493 1N1186 400 MR2504 MR3495 1N1188 600 MR2506 800 MR2508

1N1190A

Contextual Info: MCC 1N1183A THRU 1N1190A
  omponents 21201 Itasca Street Chatsworth    !"# $ %    !"# Features • • • • 40 Amp Rectifier 50 to 600 Volts High Surge Capability Low Leakage Low Forward Voltage Drop

1N1190

Abstract: PBY306 1N3768 1N1183 1N1183R 1N1184 1N3766 PBY301 PBY302 SW11
Contextual Info: 1N1183 . 1N1190, 1N3766, 1N3768, PBY301 . PB307 1N1183 . 1N1190, 1N3766, 1N3768, PBY301 . PB307 Silicon-Power-Rectifiers Silizium-Leistungs-Gleichrichter Version 2005-01-31 Nominal Current Nennstrom 7 Repetitive peak reverse voltage Periodische Spitzensperrspannung

R30420

Contextual Info: Standard Recovery Rectifiers : , P a rt N um ber M icrosem i i D ivision Microsemi Sì;?,. Package O utline Type f ' M il Spec Data S h e e t ID IO Am ps VR IFSM V F @ IO ; (V olts) j (A m p s) [ (V olts) I I ' r REC 1N1185A 1N1186 1N1186A 1N1186A JA N 1N 1186

Contextual Info: 1N1188R+JANTX Diodes Silicon Rectifier Military/High-RelY I O Max.(A) Output Current35 @Temp (øC) (Test Condition)150# V(RRM)(V) Rep.Pk.Rev. Voltage400 I(FSM) Max.(A) Pk.Fwd.Sur.Cur.500 V(FM) Max.(V) Forward Voltage2.5 @I(FM) (A) (Test Condition)500 @Temp. (øC) (Test Condition)25#

Contextual Info: 1N1188+JANTXV Diodes Silicon Rectifier Military/High-RelY I O Max.(A) Output Current35 @Temp (øC) (Test Condition)140# V(RRM)(V) Rep.Pk.Rev. Voltage400 I(FSM) Max.(A) Pk.Fwd.Sur.Cur.500 V(FM) Max.(V) Forward Voltage1.7 @I(FM) (A) (Test Condition)35 @Temp. (øC) (Test Condition)140

Contextual Info: 1N1184R+JANTX Diodes Silicon Rectifier Military/High-RelY I O Max.(A) Output Current35 @Temp (øC) (Test Condition)150# V(RRM)(V) Rep.Pk.Rev. Voltage100 I(FSM) Max.(A) Pk.Fwd.Sur.Cur.500 V(FM) Max.(V) Forward Voltage2.5 @I(FM) (A) (Test Condition)500 @Temp. (øC) (Test Condition)25#

Contextual Info: 1N1186+JANTXV Diodes Silicon Rectifier Military/High-RelY I O Max.(A) Output Current35 @Temp (øC) (Test Condition)140# V(RRM)(V) Rep.Pk.Rev. Voltage200 I(FSM) Max.(A) Pk.Fwd.Sur.Cur.500 V(FM) Max.(V) Forward Voltage1.7 @I(FM) (A) (Test Condition)35 @Temp. (øC) (Test Condition)140

DO-203AB Package

Abstract: 1N1190 1N1184 1N1186 1N1190 JANTXV 1N3768
Contextual Info: 1N1184, 1N1186, 1N1188, 1N1190, 1N3766 and 1N3768 R Available on commercial versions High Reliability Silicon Power Rectifier Qualified per MIL-PRF-19500/297 Qualified Levels: JAN, JANTX, and JANTXV DESCRIPTION This series of silicon power rectifier part numbers are qualified up to the JANTXV level for high

Contextual Info: asi 1N1183A SILICON RECTIFIER DESCRIPTION: PACKAGE STYLE D O - 5 The 1N1183A is a General Purpose Rectifier Designed for Power Supply Applications. MAXIMUM RATINGS 40 A lo AVG @ Tc = 150 °C V rw M 50 V Tj -65 to +200 °C T stg -65 to +200 °C 1.1 °C/W

Contextual Info: 1N1188 thru 1N1190R Silicon Standard Recovery Diode VRRM = 50 V - 1000 V IF = 35 A Features • High Surge Capability • Types up to 1000 V VRRM DO-5 Package Note: 1. Standard polarity: Stud is cathode. 2. Reverse polarity R : Stud is anode. 3. Stud is base.

1N1183

Abstract: 1N1183A 1N1184 1N1184A 1N1185 1N1185A 1N1190 1N3765 1N3768 1 J 250
Contextual Info: Silicon Power Rectifier 1N1183—1N1190, 1N3765—1N3768 Dim. Inches Millimeter Minimum Maximum Minimum Maximum Notes Notes: 1. Full threads within 2 1 /2 threads 2. Standard Polarity; Stud is Cathode Reverse Polarity. Stud is Anode A B C D E F G H J K M N

1N1184 JAN

Abstract: 1N1184 1N119 1n2130
Contextual Info: SEN I CO N COnPONENTS INC 2flE D • 8 1 3 5 15 7 0000fl3b □ STUD BASE RECTIFIERS DO-5 CASE lQ RATINGS TO 60.0 AMPS t rr TYPE NUMBER PRV VOLTS VF TEIIR CURRENT AMPERES V TEMP AMPS ?c *R jtA TEMP oC VsM nS RATIO AMPS 1N2488 1N249B 1N250B 1N11B3 1N1183A

A1W TRANSISTOR

Abstract: N4001 diode a39 diode a1w* transistor DIODE 1N1343 A1W diode 1N5815 Diode diode 1N5825 TRANSISTOR A52 1N4822
Contextual Info: 2TC 000 98 2848352 DIODE TRA NSI ST OR CO INC 7^-0/- O/ E T m T 5fl4fl3SE ODDODTfl h RECTIFIERS DEVICES PKG DEVICES PKG DEVICES PKG DEVICES PKG DEVICES PKG 1N 1183 1N1185 1N1185A 1N 1186 1N 1186A 1N 1187 1N1187A 1N1188 1N1188A 1N 1190 1N 1200 1N1200A 1N1201

1N1181

Abstract: 1N1189A 1N118 1N1183A 1N1186A 1N1187A 1N1190A A100A Edal
Contextual Info: EDAL IN DUS TRI ES INC BCHSTlb 0000273 1TH mZT>L MSE D /-O Ì-/J — t * Bv - PIV Io See.Table. kO A <§ Is 200 AMPS Vf 1.1 v @ Ir Ir ' » C Case 1-00 A <§ -21 PIV @ -121 <3 STYLE DO-* STAMP Bdal. P/N EQUI V. TO P/N 1N1183A 1N1181|A 1N118£A 1N1186A

1N1183

Abstract: 1N1183A 1N1184A 1N1185A 1N1186A 1N2128A 1N3765 DO-203AB 1N1186RA
Contextual Info: 1N1183, 1N3765, 1N1183A, 1N2128A Series Vishay High Power Products Power Silicon Rectifier Diodes, 35 A/40 A/60 A DESCRIPTION/FEATURES • Low leakage current series RoHS • Good surge current capability up to 1000 A COMPLIANT • Can be supplied to meet stringent military, aerospace and

1N1184

Abstract: 1N1183 1N1183A 1N1185 1N1186 1N2128A 1N3765 DO-203AB
Contextual Info: 1N1183, 1N3765, 1N1183A, 1N2128A Series Vishay High Power Products Power Silicon Rectifier Diodes, 35 A/40 A/60 A DESCRIPTION/FEATURES • Low leakage current series • Good surge current capability up to 1000 A • Can be supplied to meet stringent military, aerospace and

1N3766-1N3768

Abstract: 1N1184 1N1184R 1N1186R 1N1188 1N1188R 1N1190 1N1190R INI186
Contextual Info: Military Silicon Power Rectifier 1N1184-1N1190, 1N3766— 1N3768 Dim. In ch e s Millim eter M inim um M a xim u m M inim um M axim u m N o te s Notes: 1. 1 / 4 - 2 8 U N F - 3 A 2. Full t h re a d s within 2 1 / 2 th re a d s 3* For R e v e rse P o larity add F

1N1190 JANTX

Abstract: 1N1184 1N1186 1N3768 1N3766 1N3768 JANTX JANTXV 1N1186 datasheet 1N1184R 1N1186R 1N1188
Contextual Info: A Hi-Reliability Semiconductor Manufacturer Home Distributors Employment Information home | help | email Medium Power Rectifiers 35 Amps Military Product Products Quality Quote Request 1N1184 - 1N1190 / 1N3766 - 1N3768 Value Added E-mail DO203AB DO5 Available in JAN, JANTX and JANTXV

1N1184A

Abstract: 1N1186A 1N1188A 1N1190A 1N1183A 1N1183RA 1N1183R D0203AB
Contextual Info: MO TO R O L A SC D I O D E S / O P T O b 3 b 7 2 5 5 D G ñ b 2 1 b T3G • H O T ? bME D 1N1183A MOTOROLA SEMICONDUCTOR ■ thru TECHNICAL DATA 1N1190A 1N1190A is a Motorola Preferred Device 4 0 -A M P MEDIUM-CURRENT RECTIFIERS . . . fo r a p p lic a tio n s re q u irin g

70HF120

Abstract: 85HF120 88HF120 85hf80
Contextual Info: International llORlRectifier Rectifiers Standard Recovery 40-85 Amps Part Number •f <AV TC Vr r m V) 1N1183A 1N1184A 1N1185A 1N1186A 1N1187A 1N1188A 1N1189A 1N1190A 50 100 150 200 300 400 500 600 43HF10 43HF20 43HF40 43HF60 43HF80 43HF100 43HF120 43HF140